Holdings: Engineering of Highly Coherent Silicon Vacancy Defects in Silicon Carbide

Engineering of Highly Coherent Silicon Vacancy Defects in Silicon Carbide: = Erzeugung hochkohärenter Silizium Fehlstellen in Siliziumkarbid

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Bibliographic Details
Main Author:	Kasper, Christian Andreas 19XX- (Author)
Format:	Thesis Book
Language:	English
Published:	Würzburg 2020
Subjects:	Silicon Silicon carbide Engineering Irradiation Color Center Spin defect Bestrahlung Farbzentrum Spin Defekt Hochschulschrift
Online Access:	Volltext
Item Description:	erschienen 2021
Physical Description:	vi, 136 Seiten Illustrationen, Diagramme
DOI:	10.25972/OPUS-23779

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MARC


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spelling	Kasper, Christian Andreas 19XX- Verfasser (DE-588)1237918316 aut Engineering of Highly Coherent Silicon Vacancy Defects in Silicon Carbide = Erzeugung hochkohärenter Silizium Fehlstellen in Siliziumkarbid vorgelegt von Christian Andreas Kasper aus Gelnhausen Erzeugung hochkohärenter Silizium Fehlstellen in Siliziumkarbid Würzburg 2020 vi, 136 Seiten Illustrationen, Diagramme txt rdacontent n rdamedia nc rdacarrier erschienen 2021 Dissertation Julius-Maximilians-Universität Würzburg 2021 Zusammenfassung in deutscher und englischer Sprache Archivierung/Langzeitarchivierung gewährleistet DE-101 pdager 4\p Silicon (DLC)sh85122512 http://id.loc.gov/authorities/subjects/sh85122512 lcsh 5\p Silicon carbide (DLC)sh85122519 http://id.loc.gov/authorities/subjects/sh85122519 lcsh 6\p Engineering (DLC)sh85043176 http://id.loc.gov/authorities/subjects/sh85043176 lcsh Irradiation Color Center Spin defect Bestrahlung Farbzentrum Spin Defekt (DE-588)4113937-9 Hochschulschrift gnd-content Erscheint auch als Online-Ausgabe urn:nbn:de:bvb:20-opus-237797 doi:10.25972/OPUS-23779 https://doi.org/10.25972/OPUS-23779 Resolving-System kostenfrei Volltext 1\p aepkn 0,94553 20210525 DE-101 https://d-nb.info/provenance/plan#aepkn 2\p aepsg 0,99993 20210525 DE-101 https://d-nb.info/provenance/plan#aepsg 3\p npi 20210524 DE-101 https://d-nb.info/provenance/plan#npi 4\p aeplcsh 0,07143 20210525 DE-101 https://d-nb.info/provenance/plan#aeplcsh 5\p aeplcsh 0,06429 20210525 DE-101 https://d-nb.info/provenance/plan#aeplcsh 6\p aeplcsh 0,02143 20210525 DE-101 https://d-nb.info/provenance/plan#aeplcsh
spellingShingle	Kasper, Christian Andreas 19XX- Engineering of Highly Coherent Silicon Vacancy Defects in Silicon Carbide = Erzeugung hochkohärenter Silizium Fehlstellen in Siliziumkarbid 4\p Silicon (DLC)sh85122512 http://id.loc.gov/authorities/subjects/sh85122512 lcsh 5\p Silicon carbide (DLC)sh85122519 http://id.loc.gov/authorities/subjects/sh85122519 lcsh 6\p Engineering (DLC)sh85043176 http://id.loc.gov/authorities/subjects/sh85043176 lcsh
subject_GND	(DLC)sh85122512 http://id.loc.gov/authorities/subjects/sh85122512 (DLC)sh85122519 http://id.loc.gov/authorities/subjects/sh85122519 (DLC)sh85043176 http://id.loc.gov/authorities/subjects/sh85043176 (DE-588)4113937-9
title	Engineering of Highly Coherent Silicon Vacancy Defects in Silicon Carbide = Erzeugung hochkohärenter Silizium Fehlstellen in Siliziumkarbid
title_alt	Erzeugung hochkohärenter Silizium Fehlstellen in Siliziumkarbid
title_auth	Engineering of Highly Coherent Silicon Vacancy Defects in Silicon Carbide = Erzeugung hochkohärenter Silizium Fehlstellen in Siliziumkarbid
title_exact_search	Engineering of Highly Coherent Silicon Vacancy Defects in Silicon Carbide = Erzeugung hochkohärenter Silizium Fehlstellen in Siliziumkarbid
title_exact_search_txtP	Engineering of Highly Coherent Silicon Vacancy Defects in Silicon Carbide = Erzeugung hochkohärenter Silizium Fehlstellen in Siliziumkarbid
title_full	Engineering of Highly Coherent Silicon Vacancy Defects in Silicon Carbide = Erzeugung hochkohärenter Silizium Fehlstellen in Siliziumkarbid vorgelegt von Christian Andreas Kasper aus Gelnhausen
title_fullStr	Engineering of Highly Coherent Silicon Vacancy Defects in Silicon Carbide = Erzeugung hochkohärenter Silizium Fehlstellen in Siliziumkarbid vorgelegt von Christian Andreas Kasper aus Gelnhausen
title_full_unstemmed	Engineering of Highly Coherent Silicon Vacancy Defects in Silicon Carbide = Erzeugung hochkohärenter Silizium Fehlstellen in Siliziumkarbid vorgelegt von Christian Andreas Kasper aus Gelnhausen
title_short	Engineering of Highly Coherent Silicon Vacancy Defects in Silicon Carbide
title_sort	engineering of highly coherent silicon vacancy defects in silicon carbide erzeugung hochkoharenter silizium fehlstellen in siliziumkarbid
title_sub	= Erzeugung hochkohärenter Silizium Fehlstellen in Siliziumkarbid
topic	4\p Silicon (DLC)sh85122512 http://id.loc.gov/authorities/subjects/sh85122512 lcsh 5\p Silicon carbide (DLC)sh85122519 http://id.loc.gov/authorities/subjects/sh85122519 lcsh 6\p Engineering (DLC)sh85043176 http://id.loc.gov/authorities/subjects/sh85043176 lcsh
topic_facet	Silicon Silicon carbide Engineering Hochschulschrift
url	https://doi.org/10.25972/OPUS-23779
work_keys_str_mv	AT kasperchristianandreas engineeringofhighlycoherentsiliconvacancydefectsinsiliconcarbideerzeugunghochkoharentersiliziumfehlstelleninsiliziumkarbid AT kasperchristianandreas erzeugunghochkoharentersiliziumfehlstelleninsiliziumkarbid

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