Heterostructure design and epitaxial growth of AlGaN-based light emitting diodes emitting in the UVC wavelength range:
Saved in:
| Main Author: | |
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| Format: | Thesis Electronic eBook |
| Language: | English |
| Published: |
Berlin
2020
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| Subjects: | |
| Online Access: | Volltext |
| Physical Description: | 1 Online-Ressource (X, 131 Seiten) Illustrationen, Diagramme |
| DOI: | 10.14279/depositonce-10460 |
Staff View
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| 245 | 1 | 0 | |a Heterostructure design and epitaxial growth of AlGaN-based light emitting diodes emitting in the UVC wavelength range |c vorgelegt von Master of Science in Physik Norman Susilo |
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| spelling | Susilo, Norman Verfasser (DE-588)1216900663 aut Heterostructure design and epitaxial growth of AlGaN-based light emitting diodes emitting in the UVC wavelength range vorgelegt von Master of Science in Physik Norman Susilo Heterostructure design and epitaxial growth of AlGaN based light emitting diodes emitting in the UVC wavelength range Berlin 2020 1 Online-Ressource (X, 131 Seiten) Illustrationen, Diagramme txt rdacontent c rdamedia cr rdacarrier Dissertation Technische Universität Berlin 2020 Epitaxieschicht (DE-588)4152546-2 gnd rswk-swf Heterostruktur (DE-588)4123378-5 gnd rswk-swf Galliumnitrid (DE-588)4375592-6 gnd rswk-swf Lumineszenzdiode (DE-588)4125154-4 gnd rswk-swf MOCVD-Verfahren (DE-588)4314628-4 gnd rswk-swf Aluminiumnitrid (DE-588)4226770-5 gnd rswk-swf Ultraviolett C (DE-588)4786417-5 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Lumineszenzdiode (DE-588)4125154-4 s Aluminiumnitrid (DE-588)4226770-5 s Galliumnitrid (DE-588)4375592-6 s Ultraviolett C (DE-588)4786417-5 s MOCVD-Verfahren (DE-588)4314628-4 s Epitaxieschicht (DE-588)4152546-2 s Heterostruktur (DE-588)4123378-5 s DE-604 Erscheint auch als Druck-Ausgabe (DE-604)BV046877734 https://doi.org/10.14279/depositonce-10460 Resolving-System kostenfrei Volltext |
| spellingShingle | Susilo, Norman Heterostructure design and epitaxial growth of AlGaN-based light emitting diodes emitting in the UVC wavelength range Epitaxieschicht (DE-588)4152546-2 gnd Heterostruktur (DE-588)4123378-5 gnd Galliumnitrid (DE-588)4375592-6 gnd Lumineszenzdiode (DE-588)4125154-4 gnd MOCVD-Verfahren (DE-588)4314628-4 gnd Aluminiumnitrid (DE-588)4226770-5 gnd Ultraviolett C (DE-588)4786417-5 gnd |
| subject_GND | (DE-588)4152546-2 (DE-588)4123378-5 (DE-588)4375592-6 (DE-588)4125154-4 (DE-588)4314628-4 (DE-588)4226770-5 (DE-588)4786417-5 (DE-588)4113937-9 |
| title | Heterostructure design and epitaxial growth of AlGaN-based light emitting diodes emitting in the UVC wavelength range |
| title_alt | Heterostructure design and epitaxial growth of AlGaN based light emitting diodes emitting in the UVC wavelength range |
| title_auth | Heterostructure design and epitaxial growth of AlGaN-based light emitting diodes emitting in the UVC wavelength range |
| title_exact_search | Heterostructure design and epitaxial growth of AlGaN-based light emitting diodes emitting in the UVC wavelength range |
| title_exact_search_txtP | Heterostructure design and epitaxial growth of AlGaN-based light emitting diodes emitting in the UVC wavelength range |
| title_full | Heterostructure design and epitaxial growth of AlGaN-based light emitting diodes emitting in the UVC wavelength range vorgelegt von Master of Science in Physik Norman Susilo |
| title_fullStr | Heterostructure design and epitaxial growth of AlGaN-based light emitting diodes emitting in the UVC wavelength range vorgelegt von Master of Science in Physik Norman Susilo |
| title_full_unstemmed | Heterostructure design and epitaxial growth of AlGaN-based light emitting diodes emitting in the UVC wavelength range vorgelegt von Master of Science in Physik Norman Susilo |
| title_short | Heterostructure design and epitaxial growth of AlGaN-based light emitting diodes emitting in the UVC wavelength range |
| title_sort | heterostructure design and epitaxial growth of algan based light emitting diodes emitting in the uvc wavelength range |
| topic | Epitaxieschicht (DE-588)4152546-2 gnd Heterostruktur (DE-588)4123378-5 gnd Galliumnitrid (DE-588)4375592-6 gnd Lumineszenzdiode (DE-588)4125154-4 gnd MOCVD-Verfahren (DE-588)4314628-4 gnd Aluminiumnitrid (DE-588)4226770-5 gnd Ultraviolett C (DE-588)4786417-5 gnd |
| topic_facet | Epitaxieschicht Heterostruktur Galliumnitrid Lumineszenzdiode MOCVD-Verfahren Aluminiumnitrid Ultraviolett C Hochschulschrift |
| url | https://doi.org/10.14279/depositonce-10460 |
| work_keys_str_mv | AT susilonorman heterostructuredesignandepitaxialgrowthofalganbasedlightemittingdiodesemittingintheuvcwavelengthrange |