Heterostructure design and epitaxial growth of AlGaN-based light emitting diodes emitting in the UVC wavelength range:
Gespeichert in:
| 1. Verfasser: | |
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| Format: | Abschlussarbeit Buch |
| Sprache: | English |
| Veröffentlicht: |
Berlin
2020
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| Schlagworte: | |
| Online-Zugang: | Volltext |
| Beschreibung: | X, 131 Seiten Illustrationen, Diagramme |
| DOI: | 10.14279/depositonce-10460 |
Internformat
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| 245 | 1 | 0 | |a Heterostructure design and epitaxial growth of AlGaN-based light emitting diodes emitting in the UVC wavelength range |c vorgelegt von Master of Science in Physik Norman Susilo |
| 246 | 1 | 3 | |a Heterostructure design and epitaxial growth of AlGaN based light emitting diodes emitting in the UVC wavelength range |
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| index_date | 2024-07-03T15:16:40Z |
| indexdate | 2024-07-10T08:56:19Z |
| institution | BVB |
| language | English |
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| spelling | Susilo, Norman Verfasser (DE-588)1216900663 aut Heterostructure design and epitaxial growth of AlGaN-based light emitting diodes emitting in the UVC wavelength range vorgelegt von Master of Science in Physik Norman Susilo Heterostructure design and epitaxial growth of AlGaN based light emitting diodes emitting in the UVC wavelength range Berlin 2020 X, 131 Seiten Illustrationen, Diagramme txt rdacontent n rdamedia nc rdacarrier Dissertation Technische Universität Berlin 2020 Lumineszenzdiode (DE-588)4125154-4 gnd rswk-swf Ultraviolett C (DE-588)4786417-5 gnd rswk-swf Aluminiumnitrid (DE-588)4226770-5 gnd rswk-swf Galliumnitrid (DE-588)4375592-6 gnd rswk-swf Epitaxieschicht (DE-588)4152546-2 gnd rswk-swf MOCVD-Verfahren (DE-588)4314628-4 gnd rswk-swf Heterostruktur (DE-588)4123378-5 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Lumineszenzdiode (DE-588)4125154-4 s Aluminiumnitrid (DE-588)4226770-5 s Galliumnitrid (DE-588)4375592-6 s Ultraviolett C (DE-588)4786417-5 s MOCVD-Verfahren (DE-588)4314628-4 s Epitaxieschicht (DE-588)4152546-2 s Heterostruktur (DE-588)4123378-5 s DE-604 Erscheint auch als Online-Ausgabe 10.14279/depositonce-10460 (DE-604)BV046877740 https://doi.org/10.14279/depositonce-10460 Resolving-System kostenfrei Volltext |
| spellingShingle | Susilo, Norman Heterostructure design and epitaxial growth of AlGaN-based light emitting diodes emitting in the UVC wavelength range Lumineszenzdiode (DE-588)4125154-4 gnd Ultraviolett C (DE-588)4786417-5 gnd Aluminiumnitrid (DE-588)4226770-5 gnd Galliumnitrid (DE-588)4375592-6 gnd Epitaxieschicht (DE-588)4152546-2 gnd MOCVD-Verfahren (DE-588)4314628-4 gnd Heterostruktur (DE-588)4123378-5 gnd |
| subject_GND | (DE-588)4125154-4 (DE-588)4786417-5 (DE-588)4226770-5 (DE-588)4375592-6 (DE-588)4152546-2 (DE-588)4314628-4 (DE-588)4123378-5 (DE-588)4113937-9 |
| title | Heterostructure design and epitaxial growth of AlGaN-based light emitting diodes emitting in the UVC wavelength range |
| title_alt | Heterostructure design and epitaxial growth of AlGaN based light emitting diodes emitting in the UVC wavelength range |
| title_auth | Heterostructure design and epitaxial growth of AlGaN-based light emitting diodes emitting in the UVC wavelength range |
| title_exact_search | Heterostructure design and epitaxial growth of AlGaN-based light emitting diodes emitting in the UVC wavelength range |
| title_exact_search_txtP | Heterostructure design and epitaxial growth of AlGaN-based light emitting diodes emitting in the UVC wavelength range |
| title_full | Heterostructure design and epitaxial growth of AlGaN-based light emitting diodes emitting in the UVC wavelength range vorgelegt von Master of Science in Physik Norman Susilo |
| title_fullStr | Heterostructure design and epitaxial growth of AlGaN-based light emitting diodes emitting in the UVC wavelength range vorgelegt von Master of Science in Physik Norman Susilo |
| title_full_unstemmed | Heterostructure design and epitaxial growth of AlGaN-based light emitting diodes emitting in the UVC wavelength range vorgelegt von Master of Science in Physik Norman Susilo |
| title_short | Heterostructure design and epitaxial growth of AlGaN-based light emitting diodes emitting in the UVC wavelength range |
| title_sort | heterostructure design and epitaxial growth of algan based light emitting diodes emitting in the uvc wavelength range |
| topic | Lumineszenzdiode (DE-588)4125154-4 gnd Ultraviolett C (DE-588)4786417-5 gnd Aluminiumnitrid (DE-588)4226770-5 gnd Galliumnitrid (DE-588)4375592-6 gnd Epitaxieschicht (DE-588)4152546-2 gnd MOCVD-Verfahren (DE-588)4314628-4 gnd Heterostruktur (DE-588)4123378-5 gnd |
| topic_facet | Lumineszenzdiode Ultraviolett C Aluminiumnitrid Galliumnitrid Epitaxieschicht MOCVD-Verfahren Heterostruktur Hochschulschrift |
| url | https://doi.org/10.14279/depositonce-10460 |
| work_keys_str_mv | AT susilonorman heterostructuredesignandepitaxialgrowthofalganbasedlightemittingdiodesemittingintheuvcwavelengthrange |