A modeling Methodology for Resistive RAM based on Stanford-PKU Model with Extended Multilevel Capability:
Modeling of resistive RAMs (RRAMs) is a herculean task due to its non-linearity. While the exigent need for a model has motivated research groups to formulate realistic models, the diversity in RRAMs’ characteristics has created a gap between model developers and model users. This paper bridges the...
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| Format: | Elektronisch E-Book |
| Sprache: | English |
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Erlangen
Friedrich-Alexander-Universität Erlangen-Nürnberg
2019
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| Zusammenfassung: | Modeling of resistive RAMs (RRAMs) is a herculean task due to its non-linearity. While the exigent need for a model has motivated research groups to formulate realistic models, the diversity in RRAMs’ characteristics has created a gap between model developers and model users. This paper bridges the gap by proposing an algorithm by which the parameters of a model are tuned to specific RRAMs. To this end, a physics-based compact model was chosen due to its flexibility, and the proposed algorithm was used to exactly fit the model to different RRAMs, which differed greatly in their material composition and switching behavior. Furthermore, the model was extended to simulate multiple low resistance states (LRS), which is a vital focus of research to increase memory density in RRAMs. The ability of the model to simulate the switching from a high resistance state to multiple LRS was verified by measurements on 1T-1R cells.zeige weniger Volltext Dateien herunterladen Accepted_PrePrint_tobePosted.pdfeng (3342KB) Metadaten exportieren BibTeX RIS Weitere Dienste Teilen auf Twitter Suche bei Google Scholar Statistik - Anzahl der Zugriffe auf das Dokument MetadatenAutor(en): John ReubenORCiD, Dietmar Fey, Christian We |
| Beschreibung: | 1 Online-Ressource (10 Seiten) |
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| spelling | Reuben, John Verfasser aut A modeling Methodology for Resistive RAM based on Stanford-PKU Model with Extended Multilevel Capability John Reuben, Dietmar Fey, Christian Wenger Erlangen Friedrich-Alexander-Universität Erlangen-Nürnberg 2019 1 Online-Ressource (10 Seiten) txt rdacontent c rdamedia cr rdacarrier Modeling of resistive RAMs (RRAMs) is a herculean task due to its non-linearity. While the exigent need for a model has motivated research groups to formulate realistic models, the diversity in RRAMs’ characteristics has created a gap between model developers and model users. This paper bridges the gap by proposing an algorithm by which the parameters of a model are tuned to specific RRAMs. To this end, a physics-based compact model was chosen due to its flexibility, and the proposed algorithm was used to exactly fit the model to different RRAMs, which differed greatly in their material composition and switching behavior. Furthermore, the model was extended to simulate multiple low resistance states (LRS), which is a vital focus of research to increase memory density in RRAMs. The ability of the model to simulate the switching from a high resistance state to multiple LRS was verified by measurements on 1T-1R cells.zeige weniger Volltext Dateien herunterladen Accepted_PrePrint_tobePosted.pdfeng (3342KB) Metadaten exportieren BibTeX RIS Weitere Dienste Teilen auf Twitter Suche bei Google Scholar Statistik - Anzahl der Zugriffe auf das Dokument MetadatenAutor(en): John ReubenORCiD, Dietmar Fey, Christian We Archivierung/Langzeitarchivierung gewährleistet DE-101 pdager RAM (DE-588)4176909-0 gnd rswk-swf physics-based models multilevel modeling SET/RESET process Stanford model memristor resistive switching RAM (DE-588)4176909-0 s DE-604 Fey, Dietmar 1961- Verfasser (DE-588)121048926 aut Wenger, Christian Verfasser aut https://nbn-resolving.org/urn:nbn:de:bvb:29-opus4-112603 Resolving-System kostenfrei Volltext http://d-nb.info/1190359596/34 Langzeitarchivierung Nationalbibliothek kostenfrei Volltext https://open.fau.de/handle/openfau/11260 Verlag kostenfrei Volltext |
| spellingShingle | Reuben, John Fey, Dietmar 1961- Wenger, Christian A modeling Methodology for Resistive RAM based on Stanford-PKU Model with Extended Multilevel Capability RAM (DE-588)4176909-0 gnd |
| subject_GND | (DE-588)4176909-0 |
| title | A modeling Methodology for Resistive RAM based on Stanford-PKU Model with Extended Multilevel Capability |
| title_auth | A modeling Methodology for Resistive RAM based on Stanford-PKU Model with Extended Multilevel Capability |
| title_exact_search | A modeling Methodology for Resistive RAM based on Stanford-PKU Model with Extended Multilevel Capability |
| title_full | A modeling Methodology for Resistive RAM based on Stanford-PKU Model with Extended Multilevel Capability John Reuben, Dietmar Fey, Christian Wenger |
| title_fullStr | A modeling Methodology for Resistive RAM based on Stanford-PKU Model with Extended Multilevel Capability John Reuben, Dietmar Fey, Christian Wenger |
| title_full_unstemmed | A modeling Methodology for Resistive RAM based on Stanford-PKU Model with Extended Multilevel Capability John Reuben, Dietmar Fey, Christian Wenger |
| title_short | A modeling Methodology for Resistive RAM based on Stanford-PKU Model with Extended Multilevel Capability |
| title_sort | a modeling methodology for resistive ram based on stanford pku model with extended multilevel capability |
| topic | RAM (DE-588)4176909-0 gnd |
| topic_facet | RAM |
| url | https://nbn-resolving.org/urn:nbn:de:bvb:29-opus4-112603 http://d-nb.info/1190359596/34 https://open.fau.de/handle/openfau/11260 |
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