Verfügbarkeit: Analysis, design and experimental evaluation of sub-THz power amplifiers based on GaAs metamorphic HEMT technology

Analysis, design and experimental evaluation of sub-THz power amplifiers based on GaAs metamorphic HEMT technology:

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Bibliographische Detailangaben
1. Verfasser:	Amado Rey, Ana Belen 1989- (VerfasserIn)
Format:	Abschlussarbeit Buch
Sprache:	English
Veröffentlicht:	Stuttgart Fraunhofer Verlag [2018]
Schriftenreihe:	Science for systems Band 39
Schlagworte:	MMIC Galliumarsenid-Feldeffekttransistor Terahertzbereich HEMT Transistorverstärker Leistungsverstärker Hochschulschrift
Online-Zugang:	Inhaltstext Inhaltsverzeichnis Inhaltsverzeichnis
Beschreibung:	Eine Online-Version ist unter https://doi.org/10.6094/UNIFR/15755 Open Access verfügbar.
Beschreibung:	168 Seiten Illustrationen, Diagramme 21 cm
ISBN:	9783839614037 3839614031

Internformat

MARC


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Datensatz im Suchindex

_version_	1804180038826852352
adam_text	CONTENTS 1. INTRODUCTION 1 1.1. M O TIV A TIO N ........................................................................................................ 1 1.2. AIM OF THE W O R K .............................................................................................. 4 1.3. THESIS O U TLIN E ................................................................................................. 5 2. STATE OF THE ART AND CHALLENGES IN THE DESIGN OF SSPAS FOR SUB-THZ ELECTRONICS 7 2.1. ACTIVE DEVICES FOR SUB-THZ AMPLIFIERS ....................................................... 7 2.2. THE POWER COMBINING CHALLENGE IN THE SUB-THZ RANGE ............................. 10 2.3. STATE-OF-THE-ART OF SUB-THZ PAS MMICS AND INTEGRATED MODULES .... 13 3. TECHNOLOGY, MODELING AND EXPERIMENTAL CHARACTERIZATION 17 3.1. THE MHEMT TE CH N O LO G Y.............................................................................. 17 3.2. PROPAGATION CHARACTERISTICS AND MODELING OF GCPW ELEMENTS ............. 21 3.3. ACTIVE DEVICE M O D E LIN G ................................................................................. 25 3.4. EXPERIMENTAL CHARACTERIZATION IN THE SUB-THZ FREQUENCY R A N G E ............. 28 3.4.1. PREPARATION OF TEST STRUCTURES FOR ADEQUATE CHARACTERIZATION . . 28 3.4.2. MEASUREMENT SET-UP S...................................................................... 29 4. POWER DIVIDERS AND COUPLERS IN THE UPPER MMW AND SUB-MMW RANGES 33 4.1. METHODOLOGY FOR EFFICIENT EM SIM ULATION.................................................... 34 4.2. IMPACT OF VIA-HOLE PLACEM ENT....................................................................... 36 4.3. IMPACT OF METALLIZATION LAYER STRUCTURE ON BRANCH-LINE C O U P LE RS ............. 37 4.4. COMPARATIVE ANALYSIS OF TANDEM-X AND BROADSIDE C O U P LE RS ................... 43 4.5. WILKINSON POWER D IV ID E R/C O M B IN E R ............................................................. 56 4.6. DOLPH-CHEBYSHEV POWER D IV ID E R/CO M B IN E R ................................................ 62 4.7. SYSTEMATIC COMPARISON OF COUPLER AND COMBINER S TRU C TU RE S ................... 68 5. SERIES COMBINING STRATEGIES FOR M H E M T POWER AMPLIFIERS IN THE SUB-THZ RANGE 71 5.1. SERIES COMBINING TOPOLOGIES .......................................................................... 71 5.2. FIGURES OF M E R IT .............................................................................................. 73 5.3. SINGLE-STACK AMPLIFIER ANALYSIS....................................................................... 88 5.3.1. C-TO-GND TOP OLO GY......................................................................... 88 5.3.2. MULTIPLE CASCODE TO P O LO G Y ............................................................ 93 5.3.3. BOOTSTRAPPING C O N FIG U RA TIO N ......................................................... 97 5.3.4. COMPARISON C-TO-GND AND CASCODE TOPOLOGY AT 240 GHZ . . . 101 5.4. COMPARISON BETWEEN MULTIPLE CASCODE AND C-TO-GND CONFIGURATIONS WITH PARALLEL COM B IN ING........................................................................................... 102 5.4.1. C-TO-GND M M IC .............................................................................. 104 5.4.2. MULTIPLE CASCODE MMIC ................................................................. 106 6. MMW AND SUB-MMW POWER AMPLIFIER MM ICS 111 6.1. IN TRO D U C TIO N ..................................................................................................... I L L 6.2. 50 NM AND 35 NM BALANCED 2-FET CASCODE MHEMT POWER AMPLIFIERS . 113 6.2.1. 35-NM MHEMT DRIVER AMPLIFIER AT 200 G H Z ................................... 114 6.2.2. 50-NM MHEMT BROADBAND 175-245 GHZ BALANCED MPA .... 115 6.2.3. A G-BAND BROADBAND BALANCED PA MODULE BASED ON 35 NM CASCODE MHEMTS ........................................................................... 116 6.2.4. DISCUSSION........................................................................................... 122 6.3. 35 NM TRIPLE STACKED C-TO-GND MHEMT POWER AMPLIFIER AT 240 GHZ . 123 6.3.1. DESIGN TOPOLOGY................................................................................. 123 6.3.2. FOM A N A LY S IS .................................................................................... 126 6.3.3. MEASUREMENT RE S U LTS ....................................................................... 127 6.3.4. COMPARISON WITH THE STATE OF THE ART ............................................. 128 6.4. SUMMARY ........................................................................................................ 129 7. CONCLUSION AND FUTURE WORK 131 A. TANDEM-X COUPLER 137 LIST OF FIGURES 139 LIST OF TABLES 143 ACRONYMS 145 LIST OF SYMBOLS 149 BIBLIOGRAPHY 153 LIST OF PERSONAL PUBLICATIONS 165 ACKNOWLEDGEMENTS 167
any_adam_object	1
author	Amado Rey, Ana Belen 1989-
author_GND	(DE-588)1160449449
author_facet	Amado Rey, Ana Belen 1989-
author_role	aut
author_sort	Amado Rey, Ana Belen 1989-
author_variant	r a b a rab raba
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dewey-hundreds	600 - Technology (Applied sciences)
dewey-ones	621 - Applied physics
dewey-raw	621.381325
dewey-search	621.381325
dewey-sort	3621.381325
dewey-tens	620 - Engineering and allied operations
discipline	Elektrotechnik / Elektronik / Nachrichtentechnik
format	Thesis Book
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spelling	Amado Rey, Ana Belen 1989- Verfasser (DE-588)1160449449 aut Analysis, design and experimental evaluation of sub-THz power amplifiers based on GaAs metamorphic HEMT technology Ana Belén Amado Rey Stuttgart Fraunhofer Verlag [2018] © 2018 168 Seiten Illustrationen, Diagramme 21 cm txt rdacontent n rdamedia nc rdacarrier Science for systems Band 39 Eine Online-Version ist unter https://doi.org/10.6094/UNIFR/15755 Open Access verfügbar. Dissertation Albert-Ludwigs-Universität Freiburg 2018 MMIC (DE-588)4359004-4 gnd rswk-swf Galliumarsenid-Feldeffekttransistor (DE-588)4155864-9 gnd rswk-swf Terahertzbereich (DE-588)4346673-4 gnd rswk-swf HEMT (DE-588)4211873-6 gnd rswk-swf Transistorverstärker (DE-588)4185899-2 gnd rswk-swf Leistungsverstärker (DE-588)4129735-0 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Leistungsverstärker (DE-588)4129735-0 s Terahertzbereich (DE-588)4346673-4 s Transistorverstärker (DE-588)4185899-2 s Galliumarsenid-Feldeffekttransistor (DE-588)4155864-9 s HEMT (DE-588)4211873-6 s MMIC (DE-588)4359004-4 s DE-604 Fraunhofer IRB-Verlag (DE-588)4786605-6 pbl Science for systems Band 39 (DE-604)BV042534020 39 X:MVB text/html http://deposit.dnb.de/cgi-bin/dokserv?id=6fa956c3d13a4c289d69db1f979baaf9&prov=M&dok_var=1&dok_ext=htm Inhaltstext B:DE-101 application/pdf http://d-nb.info/1173727116/04 Inhaltsverzeichnis DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=031269168&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis
spellingShingle	Amado Rey, Ana Belen 1989- Analysis, design and experimental evaluation of sub-THz power amplifiers based on GaAs metamorphic HEMT technology Science for systems MMIC (DE-588)4359004-4 gnd Galliumarsenid-Feldeffekttransistor (DE-588)4155864-9 gnd Terahertzbereich (DE-588)4346673-4 gnd HEMT (DE-588)4211873-6 gnd Transistorverstärker (DE-588)4185899-2 gnd Leistungsverstärker (DE-588)4129735-0 gnd
subject_GND	(DE-588)4359004-4 (DE-588)4155864-9 (DE-588)4346673-4 (DE-588)4211873-6 (DE-588)4185899-2 (DE-588)4129735-0 (DE-588)4113937-9
title	Analysis, design and experimental evaluation of sub-THz power amplifiers based on GaAs metamorphic HEMT technology
title_auth	Analysis, design and experimental evaluation of sub-THz power amplifiers based on GaAs metamorphic HEMT technology
title_exact_search	Analysis, design and experimental evaluation of sub-THz power amplifiers based on GaAs metamorphic HEMT technology
title_full	Analysis, design and experimental evaluation of sub-THz power amplifiers based on GaAs metamorphic HEMT technology Ana Belén Amado Rey
title_fullStr	Analysis, design and experimental evaluation of sub-THz power amplifiers based on GaAs metamorphic HEMT technology Ana Belén Amado Rey
title_full_unstemmed	Analysis, design and experimental evaluation of sub-THz power amplifiers based on GaAs metamorphic HEMT technology Ana Belén Amado Rey
title_short	Analysis, design and experimental evaluation of sub-THz power amplifiers based on GaAs metamorphic HEMT technology
title_sort	analysis design and experimental evaluation of sub thz power amplifiers based on gaas metamorphic hemt technology
topic	MMIC (DE-588)4359004-4 gnd Galliumarsenid-Feldeffekttransistor (DE-588)4155864-9 gnd Terahertzbereich (DE-588)4346673-4 gnd HEMT (DE-588)4211873-6 gnd Transistorverstärker (DE-588)4185899-2 gnd Leistungsverstärker (DE-588)4129735-0 gnd
topic_facet	MMIC Galliumarsenid-Feldeffekttransistor Terahertzbereich HEMT Transistorverstärker Leistungsverstärker Hochschulschrift
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volume_link	(DE-604)BV042534020
work_keys_str_mv	AT amadoreyanabelen analysisdesignandexperimentalevaluationofsubthzpoweramplifiersbasedongaasmetamorphichemttechnology AT fraunhoferirbverlag analysisdesignandexperimentalevaluationofsubthzpoweramplifiersbasedongaasmetamorphichemttechnology

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