Holdings: GaN-based Tri-gate high electron mobility transistors

GaN-based Tri-gate high electron mobility transistors:

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Bibliographic Details
Main Author:	Ture, Erdin (Author)
Format:	Thesis Book
Language:	English
Published:	Stuttgart Fraunhofer Verlag [2018]
Series:	Science for systems Band 35
Subjects:	Hochfrequenzleistungstransistor Galliumnitrid HEMT Multigate-Transistor Millimeterwellentechnik Leistungssteigerung Mesa-Technik Leistungsverstärker Hochschulschrift
Online Access:	Volltext Inhaltstext Inhaltsverzeichnis Inhaltsverzeichnis
Physical Description:	155 Seiten Illustrationen 21 cm
ISBN:	9783839613412 3839613418
DOI:	10.6094/UNIFR/13055

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Record in the Search Index

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adam_text	CONTENTS 1 INTRODUCTION 1 1.1 MOTIVATION FOR GAN TRI-GATE ........................................................................... 1 1.2 STATE-OF-THE-ART TECHNOLOGY.............................................................................. 4 1.2.1 GAN HEMTS FOR MILLIMETRE-WAVE APPLICATIONS ................................. 5 1.2.2 SI AND GAN TRI-GATE TECHNOLOGY C O M PA RISON.................................... 7 2 FUNDAMENTALS OF GAN-BASED H E M T DEVICES 9 2.1 PROCESS TECHNOLOGY AND DEVICE FABRICATION ................................................. 9 2.1.1 GROWTH OF AIGAN/GAN HETEROSTRUCTURES .......................................... 10 2.1.2 ALTERNATIVE BARRIER STRUCTURES FOR GAN H E M T S ................................. 12 2.1.3 FABRICATION OF GAN H E M T S .................................................................... 16 2.2 MILLI METRE-WAVE GAN HEM T TECHNOLOGY .................................................... 18 2.2.1 CONVENTIONAL GAN HEMT DC C HARACTERISTICS.................................... 18 2.2.2 SMALL- AND LARGE-SIGNAL FIGURES OF MERIT .......................................... 20 2.3 CHAPTER C O N C LU S IO N ........................................................................................... 23 3 ANALYSIS OF THE SHORT CHANNEL EFFECTS 25 3.1 DRAIN INDUCED SHORT CHANNEL E FFE C TS .............................................................. 25 3.1.1 SUB-THRESHOLD CHARACTERISTICS AND LEAKAGES ......................................... 26 3.1.2 BIAS DEPENDENCE OF THE P E RFO RM A N C E ................................................. 29 3.2 INVESTIGATION OF THE THRESHOLD V O LTA G E ........................................................... 32 3.2.1 NORMALLY-OFF O PERATION........................................................................... 33 3.2.2 INTEGRATION OF E /D MODE H E M T S ....................................................... 34 3.3 CHAPTER C O N C LU S IO N ........................................................................................... 35 4 DESIGN OF GAN TRI-GATE HEM TS 37 4.1 3-DIMENSIONAL DEVICE F ABRICATION .................................................................... 37 4.2 PROCESS D E VE LO P M E N T........................................................................................ 43 4.2.1 3-D MESA NANO-CHANNEL P A TTE RN IN G .................................................... 43 4.2.2 INVESTIGATION OF 3-D SURFACE PASSIVATION.............................................. 47 4.3 DESIGN ASPECTS OF THE TRI-GATE F E T S .............................................................. 50 4.3.1 DEVICE GEOMETRY CONSIDERATIONS........................................................... 51 4.3.2 SUPPRESSION OF THE SHORT CHANNEL E F FE C TS .......................................... 60 4.3.3 DESIGN OF NORMALLY-OFF H E M T S ........................................................... 62 4.4 INVESTIGATION OF HETEROSTRUCTURE V A RIA TIO N S .................................................... 69 4.4.1 IMPACT OF THE BARRIER ON ELECTRICAL P RO P E RTIE S .................................... 69 4.4.2 DEVELOPMENT OF HIGH-CURRENT TRI-GATE H E M T S ................................. 75 4.5 ANALYSIS OF THE THERMAL B E H A V IO U R ................................................................. 79 4.6 CHAPTER C O N C LU S IO N ............................................................................................ 82 5 MILLIMETRE-WAVE PERFORMANCE OF TRI-GATE FETS 85 5.1 RF CHARACTERISATION OF TRI-GATE H E M T S ........................................................ 85 5.1.1 REDUCTION OF THE GATE CAPACITANCE .................................................... 89 5.1.2 IMPROVEMENT OF THE INTRINSIC HF PARAMETERS ............. .......................... 92 5.2 SMALL-SIGNAL TRI-GATE P E RFO RM A N CE ................................................................. 95 5.2.1 DEVELOPMENT OF HIGH-GAIN TRI-GATE H E M T S ....................................... 95 5.2.2 INVESTIGATION ON THE RF LINEARITY OF TRI-GATE .................................... 99 5.3 LARGE-SIGNAL TRI-GATE P E RFO RM A N CE ................................................................. 104 5.4 CHAPTER C O N C LU S IO N ............................................................................................ 110 6 GAN TRI-GATE DEMONSTRATOR CIRCUITS 113 6.1 MILLI METRE-WAVE POWER AM PLIFIERS..................................................................... 113 6.1.1 PRE-MATCHED HIGH-POWER TRI-GATE F E T S .............................................. 114 6.1.2 GAN TRI-GATE M M W POWER AMPLIFIER M M IC ....................................... 117 6.2 INTEGRATED MIXED-SIGNAL CIRCUITS ..................................................................... 121 6.2.1 HIGH-SPEED DIRECT COUPLED FET L O G IC S .............................................. 121 6.2.2 INTEGRATED E /D MODE CASCODE IN V E RTE R .............................................. 122 6.3 CHAPTER C O N C LU S IO N ........................................................................................... 124 7 CONCLUSION AND OUTLOOK 125 7.1 SUMMARY AND C O N C LU S IO N .................................................................................. 125 7.2 OUTLOOK ............................................................................................................... 128 REFERENCES 129 LIST OF FIGURES 147 LIST OF TABLES 153
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author	Ture, Erdin
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spelling	Ture, Erdin Verfasser (DE-588)1139712209 aut GaN-based Tri-gate high electron mobility transistors Erdin Ture Stuttgart Fraunhofer Verlag [2018] © 2018 155 Seiten Illustrationen 21 cm txt rdacontent n rdamedia nc rdacarrier Science for systems Band 35 Dissertation Albert-Ludwigs-Universität Freiburg im Breisgau 2017 Hochfrequenzleistungstransistor (DE-588)4160142-7 gnd rswk-swf Galliumnitrid (DE-588)4375592-6 gnd rswk-swf HEMT (DE-588)4211873-6 gnd rswk-swf Multigate-Transistor (DE-588)1054435278 gnd rswk-swf Millimeterwellentechnik (DE-588)4169986-5 gnd rswk-swf Leistungssteigerung (DE-588)4167306-2 gnd rswk-swf Mesa-Technik (DE-588)4550610-3 gnd rswk-swf Leistungsverstärker (DE-588)4129735-0 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content HEMT (DE-588)4211873-6 s Galliumnitrid (DE-588)4375592-6 s Millimeterwellentechnik (DE-588)4169986-5 s Multigate-Transistor (DE-588)1054435278 s Mesa-Technik (DE-588)4550610-3 s Leistungssteigerung (DE-588)4167306-2 s Leistungsverstärker (DE-588)4129735-0 s DE-604 Hochfrequenzleistungstransistor (DE-588)4160142-7 s 1\p DE-604 Erscheint auch als Online-Ausgabe 10.6094/UNIFR/13055 Science for systems Band 35 (DE-604)BV042534020 35 https://doi.org/10.6094/UNIFR/13055 Resolving-System kostenfrei Volltext X:MVB text/html http://deposit.dnb.de/cgi-bin/dokserv?id=0275bcec56d647db89b8b3f5b07c6a59&prov=M&dok_var=1&dok_ext=htm Inhaltstext B:DE-101 application/pdf http://d-nb.info/1159915776/04 Inhaltsverzeichnis DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=030934265&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk
spellingShingle	Ture, Erdin GaN-based Tri-gate high electron mobility transistors Science for systems Hochfrequenzleistungstransistor (DE-588)4160142-7 gnd Galliumnitrid (DE-588)4375592-6 gnd HEMT (DE-588)4211873-6 gnd Multigate-Transistor (DE-588)1054435278 gnd Millimeterwellentechnik (DE-588)4169986-5 gnd Leistungssteigerung (DE-588)4167306-2 gnd Mesa-Technik (DE-588)4550610-3 gnd Leistungsverstärker (DE-588)4129735-0 gnd
subject_GND	(DE-588)4160142-7 (DE-588)4375592-6 (DE-588)4211873-6 (DE-588)1054435278 (DE-588)4169986-5 (DE-588)4167306-2 (DE-588)4550610-3 (DE-588)4129735-0 (DE-588)4113937-9
title	GaN-based Tri-gate high electron mobility transistors
title_auth	GaN-based Tri-gate high electron mobility transistors
title_exact_search	GaN-based Tri-gate high electron mobility transistors
title_full	GaN-based Tri-gate high electron mobility transistors Erdin Ture
title_fullStr	GaN-based Tri-gate high electron mobility transistors Erdin Ture
title_full_unstemmed	GaN-based Tri-gate high electron mobility transistors Erdin Ture
title_short	GaN-based Tri-gate high electron mobility transistors
title_sort	gan based tri gate high electron mobility transistors
topic	Hochfrequenzleistungstransistor (DE-588)4160142-7 gnd Galliumnitrid (DE-588)4375592-6 gnd HEMT (DE-588)4211873-6 gnd Multigate-Transistor (DE-588)1054435278 gnd Millimeterwellentechnik (DE-588)4169986-5 gnd Leistungssteigerung (DE-588)4167306-2 gnd Mesa-Technik (DE-588)4550610-3 gnd Leistungsverstärker (DE-588)4129735-0 gnd
topic_facet	Hochfrequenzleistungstransistor Galliumnitrid HEMT Multigate-Transistor Millimeterwellentechnik Leistungssteigerung Mesa-Technik Leistungsverstärker Hochschulschrift
url	https://doi.org/10.6094/UNIFR/13055 http://deposit.dnb.de/cgi-bin/dokserv?id=0275bcec56d647db89b8b3f5b07c6a59&prov=M&dok_var=1&dok_ext=htm http://d-nb.info/1159915776/04 http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=030934265&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA
volume_link	(DE-604)BV042534020
work_keys_str_mv	AT tureerdin ganbasedtrigatehighelectronmobilitytransistors

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