APA (7th ed.) Citation

Ture, E. (2018). GaN-based Tri-gate high electron mobility transistors. Fraunhofer Verlag. https://doi.org/10.6094/UNIFR/13055

Chicago Style (17th ed.) Citation

Ture, Erdin. GaN-based Tri-gate High Electron Mobility Transistors. Stuttgart: Fraunhofer Verlag, 2018. https://doi.org/10.6094/UNIFR/13055.

MLA (9th ed.) Citation

Ture, Erdin. GaN-based Tri-gate High Electron Mobility Transistors. Fraunhofer Verlag, 2018. https://doi.org/10.6094/UNIFR/13055.