Influence of a TESb flush on InAs/GaAs submonolayer stacks:
Saved in:
| Main Author: | |
|---|---|
| Format: | Thesis Book |
| Language: | English |
| Published: |
Berlin
2018
|
| Subjects: | |
| Online Access: | Volltext |
| Physical Description: | X, 118 Seiten Illustrationen, Diagramme |
| DOI: | 10.14279/depositonce-7837 |
Staff View
MARC
| LEADER | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | BV045378725 | ||
| 003 | DE-604 | ||
| 005 | 20190903 | ||
| 007 | t | ||
| 008 | 181220s2018 a||| m||| 00||| eng d | ||
| 035 | |a (OCoLC)1118998967 | ||
| 035 | |a (DE-599)BVBBV045378725 | ||
| 040 | |a DE-604 |b ger |e rda | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-83 | ||
| 100 | 1 | |a Quandt, Paul David Maximilian |e Verfasser |0 (DE-588)1194021093 |4 aut | |
| 245 | 1 | 0 | |a Influence of a TESb flush on InAs/GaAs submonolayer stacks |c vorgelegt von Master of Science Paul David Maximilian Quandt, geb. in Berlin |
| 264 | 1 | |a Berlin |c 2018 | |
| 300 | |a X, 118 Seiten |b Illustrationen, Diagramme | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 502 | |b Dissertation |c Technische Universität Berlin |d 2018 | ||
| 650 | 0 | 7 | |a Antimon |0 (DE-588)4002299-7 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Monoschicht |0 (DE-588)4250307-3 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a InGaAs |0 (DE-588)1135928177 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a MOCVD-Verfahren |0 (DE-588)4314628-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Galliumarsenid |0 (DE-588)4019155-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Quantenpunkt |0 (DE-588)4263396-5 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
| 689 | 0 | 0 | |a Quantenpunkt |0 (DE-588)4263396-5 |D s |
| 689 | 0 | 1 | |a Monoschicht |0 (DE-588)4250307-3 |D s |
| 689 | 0 | 2 | |a InGaAs |0 (DE-588)1135928177 |D s |
| 689 | 0 | 3 | |a MOCVD-Verfahren |0 (DE-588)4314628-4 |D s |
| 689 | 0 | 4 | |a Antimon |0 (DE-588)4002299-7 |D s |
| 689 | 0 | |5 DE-604 | |
| 689 | 1 | 0 | |a Quantenpunkt |0 (DE-588)4263396-5 |D s |
| 689 | 1 | 1 | |a Monoschicht |0 (DE-588)4250307-3 |D s |
| 689 | 1 | 2 | |a Galliumarsenid |0 (DE-588)4019155-2 |D s |
| 689 | 1 | 3 | |a MOCVD-Verfahren |0 (DE-588)4314628-4 |D s |
| 689 | 1 | 4 | |a Antimon |0 (DE-588)4002299-7 |D s |
| 689 | 1 | |5 DE-604 | |
| 776 | 0 | 8 | |i Erscheint auch als |n Online-Ausgabe |o 10.14279/depositonce-7837 |w (DE-604)BV045378737 |
| 856 | 4 | 1 | |u https://doi.org/10.14279/depositonce-7837 |x Resolving-System |z kostenfrei |3 Volltext |
| 912 | |a ebook | ||
| 999 | |a oai:aleph.bib-bvb.de:BVB01-030765102 | ||
Record in the Search Index
| _version_ | 1804179227796307968 |
|---|---|
| any_adam_object | |
| author | Quandt, Paul David Maximilian |
| author_GND | (DE-588)1194021093 |
| author_facet | Quandt, Paul David Maximilian |
| author_role | aut |
| author_sort | Quandt, Paul David Maximilian |
| author_variant | p d m q pdm pdmq |
| building | Verbundindex |
| bvnumber | BV045378725 |
| collection | ebook |
| ctrlnum | (OCoLC)1118998967 (DE-599)BVBBV045378725 |
| doi_str_mv | 10.14279/depositonce-7837 |
| format | Thesis Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>02048nam a2200517 c 4500</leader><controlfield tag="001">BV045378725</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20190903 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">181220s2018 a||| m||| 00||| eng d</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)1118998967</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV045378725</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rda</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-83</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Quandt, Paul David Maximilian</subfield><subfield code="e">Verfasser</subfield><subfield code="0">(DE-588)1194021093</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Influence of a TESb flush on InAs/GaAs submonolayer stacks</subfield><subfield code="c">vorgelegt von Master of Science Paul David Maximilian Quandt, geb. in Berlin</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Berlin</subfield><subfield code="c">2018</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">X, 118 Seiten</subfield><subfield code="b">Illustrationen, Diagramme</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="502" ind1=" " ind2=" "><subfield code="b">Dissertation</subfield><subfield code="c">Technische Universität Berlin</subfield><subfield code="d">2018</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Antimon</subfield><subfield code="0">(DE-588)4002299-7</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Monoschicht</subfield><subfield code="0">(DE-588)4250307-3</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">InGaAs</subfield><subfield code="0">(DE-588)1135928177</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">MOCVD-Verfahren</subfield><subfield code="0">(DE-588)4314628-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Galliumarsenid</subfield><subfield code="0">(DE-588)4019155-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Quantenpunkt</subfield><subfield code="0">(DE-588)4263396-5</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)4113937-9</subfield><subfield code="a">Hochschulschrift</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Quantenpunkt</subfield><subfield code="0">(DE-588)4263396-5</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Monoschicht</subfield><subfield code="0">(DE-588)4250307-3</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">InGaAs</subfield><subfield code="0">(DE-588)1135928177</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="3"><subfield code="a">MOCVD-Verfahren</subfield><subfield code="0">(DE-588)4314628-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="4"><subfield code="a">Antimon</subfield><subfield code="0">(DE-588)4002299-7</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Quantenpunkt</subfield><subfield code="0">(DE-588)4263396-5</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="1"><subfield code="a">Monoschicht</subfield><subfield code="0">(DE-588)4250307-3</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="2"><subfield code="a">Galliumarsenid</subfield><subfield code="0">(DE-588)4019155-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="3"><subfield code="a">MOCVD-Verfahren</subfield><subfield code="0">(DE-588)4314628-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="4"><subfield code="a">Antimon</subfield><subfield code="0">(DE-588)4002299-7</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="776" ind1="0" ind2="8"><subfield code="i">Erscheint auch als</subfield><subfield code="n">Online-Ausgabe</subfield><subfield code="o">10.14279/depositonce-7837</subfield><subfield code="w">(DE-604)BV045378737</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.14279/depositonce-7837</subfield><subfield code="x">Resolving-System</subfield><subfield code="z">kostenfrei</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ebook</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-030765102</subfield></datafield></record></collection> |
| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV045378725 |
| illustrated | Illustrated |
| indexdate | 2024-07-10T08:16:31Z |
| institution | BVB |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-030765102 |
| oclc_num | 1118998967 |
| open_access_boolean | 1 |
| owner | DE-83 |
| owner_facet | DE-83 |
| physical | X, 118 Seiten Illustrationen, Diagramme |
| psigel | ebook |
| publishDate | 2018 |
| publishDateSearch | 2018 |
| publishDateSort | 2018 |
| record_format | marc |
| spelling | Quandt, Paul David Maximilian Verfasser (DE-588)1194021093 aut Influence of a TESb flush on InAs/GaAs submonolayer stacks vorgelegt von Master of Science Paul David Maximilian Quandt, geb. in Berlin Berlin 2018 X, 118 Seiten Illustrationen, Diagramme txt rdacontent n rdamedia nc rdacarrier Dissertation Technische Universität Berlin 2018 Antimon (DE-588)4002299-7 gnd rswk-swf Monoschicht (DE-588)4250307-3 gnd rswk-swf InGaAs (DE-588)1135928177 gnd rswk-swf MOCVD-Verfahren (DE-588)4314628-4 gnd rswk-swf Galliumarsenid (DE-588)4019155-2 gnd rswk-swf Quantenpunkt (DE-588)4263396-5 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Quantenpunkt (DE-588)4263396-5 s Monoschicht (DE-588)4250307-3 s InGaAs (DE-588)1135928177 s MOCVD-Verfahren (DE-588)4314628-4 s Antimon (DE-588)4002299-7 s DE-604 Galliumarsenid (DE-588)4019155-2 s Erscheint auch als Online-Ausgabe 10.14279/depositonce-7837 (DE-604)BV045378737 https://doi.org/10.14279/depositonce-7837 Resolving-System kostenfrei Volltext |
| spellingShingle | Quandt, Paul David Maximilian Influence of a TESb flush on InAs/GaAs submonolayer stacks Antimon (DE-588)4002299-7 gnd Monoschicht (DE-588)4250307-3 gnd InGaAs (DE-588)1135928177 gnd MOCVD-Verfahren (DE-588)4314628-4 gnd Galliumarsenid (DE-588)4019155-2 gnd Quantenpunkt (DE-588)4263396-5 gnd |
| subject_GND | (DE-588)4002299-7 (DE-588)4250307-3 (DE-588)1135928177 (DE-588)4314628-4 (DE-588)4019155-2 (DE-588)4263396-5 (DE-588)4113937-9 |
| title | Influence of a TESb flush on InAs/GaAs submonolayer stacks |
| title_auth | Influence of a TESb flush on InAs/GaAs submonolayer stacks |
| title_exact_search | Influence of a TESb flush on InAs/GaAs submonolayer stacks |
| title_full | Influence of a TESb flush on InAs/GaAs submonolayer stacks vorgelegt von Master of Science Paul David Maximilian Quandt, geb. in Berlin |
| title_fullStr | Influence of a TESb flush on InAs/GaAs submonolayer stacks vorgelegt von Master of Science Paul David Maximilian Quandt, geb. in Berlin |
| title_full_unstemmed | Influence of a TESb flush on InAs/GaAs submonolayer stacks vorgelegt von Master of Science Paul David Maximilian Quandt, geb. in Berlin |
| title_short | Influence of a TESb flush on InAs/GaAs submonolayer stacks |
| title_sort | influence of a tesb flush on inas gaas submonolayer stacks |
| topic | Antimon (DE-588)4002299-7 gnd Monoschicht (DE-588)4250307-3 gnd InGaAs (DE-588)1135928177 gnd MOCVD-Verfahren (DE-588)4314628-4 gnd Galliumarsenid (DE-588)4019155-2 gnd Quantenpunkt (DE-588)4263396-5 gnd |
| topic_facet | Antimon Monoschicht InGaAs MOCVD-Verfahren Galliumarsenid Quantenpunkt Hochschulschrift |
| url | https://doi.org/10.14279/depositonce-7837 |
| work_keys_str_mv | AT quandtpauldavidmaximilian influenceofatesbflushoninasgaassubmonolayerstacks |