III-nitride devices and nanoengineering:
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| Format: | Electronic eBook |
|---|---|
| Language: | English |
| Published: |
London
Imperial College Press
2008
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| Subjects: | |
| Item Description: | Print version record |
| Physical Description: | 1 online resource (xiv, 462 pages) illustrations |
| ISBN: | 9781848162242 1848162243 |
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| contents | Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices. Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment. This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field |
| ctrlnum | (ZDB-4-ENC)ocn824699001 (OCoLC)824699001 (DE-599)BVBBV045345084 |
| dewey-full | 621.38152 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.38152 |
| dewey-search | 621.38152 |
| dewey-sort | 3621.38152 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Electronic eBook |
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| id | DE-604.BV045345084 |
| illustrated | Illustrated |
| indexdate | 2024-07-10T08:15:32Z |
| institution | BVB |
| isbn | 9781848162242 1848162243 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-030731786 |
| oclc_num | 824699001 |
| open_access_boolean | |
| physical | 1 online resource (xiv, 462 pages) illustrations |
| psigel | ZDB-4-ENC |
| publishDate | 2008 |
| publishDateSearch | 2008 |
| publishDateSort | 2008 |
| publisher | Imperial College Press |
| record_format | marc |
| spelling | III-nitride devices and nanoengineering Zhe Chuan Feng, editor London Imperial College Press 2008 1 online resource (xiv, 462 pages) illustrations txt rdacontent c rdamedia cr rdacarrier Print version record Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices. Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment. This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh Gallium nitride fast Nanotechnology fast Semiconductors / Materials fast Semiconductors Materials Gallium nitride Nanotechnology Feng, Zhe Chuan Sonstige oth Erscheint auch als Druck-Ausgabe III-nitride devices and nanoengineering London : Imperial College Press, 2008 1848162235 |
| spellingShingle | III-nitride devices and nanoengineering Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices. Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment. This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh Gallium nitride fast Nanotechnology fast Semiconductors / Materials fast Semiconductors Materials Gallium nitride Nanotechnology |
| title | III-nitride devices and nanoengineering |
| title_auth | III-nitride devices and nanoengineering |
| title_exact_search | III-nitride devices and nanoengineering |
| title_full | III-nitride devices and nanoengineering Zhe Chuan Feng, editor |
| title_fullStr | III-nitride devices and nanoengineering Zhe Chuan Feng, editor |
| title_full_unstemmed | III-nitride devices and nanoengineering Zhe Chuan Feng, editor |
| title_short | III-nitride devices and nanoengineering |
| title_sort | iii nitride devices and nanoengineering |
| topic | TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh Gallium nitride fast Nanotechnology fast Semiconductors / Materials fast Semiconductors Materials Gallium nitride Nanotechnology |
| topic_facet | TECHNOLOGY & ENGINEERING / Electronics / Semiconductors TECHNOLOGY & ENGINEERING / Electronics / Solid State Gallium nitride Nanotechnology Semiconductors / Materials Semiconductors Materials Gallium nitride Nanotechnology |
| work_keys_str_mv | AT fengzhechuan iiinitridedevicesandnanoengineering |