Electromigration in ULSI interconnections:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Singapore ; Hackensack, N.J.
World Scientific Pub. Co.
2010
|
| Schriftenreihe: | International series on advances in solid state electronics and technology
|
| Schlagworte: | |
| Beschreibung: | Print version record |
| Beschreibung: | 1 online resource (xix, 291 pages) illustrations (some color) |
| ISBN: | 9789814273336 9814273333 |
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| 245 | 1 | 0 | |a Electromigration in ULSI interconnections |c Cher Ming Tan |
| 264 | 1 | |a Singapore ; Hackensack, N.J. |b World Scientific Pub. Co. |c 2010 | |
| 300 | |a 1 online resource (xix, 291 pages) |b illustrations (some color) | ||
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| 490 | 0 | |a International series on advances in solid state electronics and technology | |
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| 505 | 8 | |a Electromigration in ULSI Interconnections provides a comprehensive description of the electromigration in integrated circuits. It is intended for both beginner and advanced readers on electromigration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on electromigration, and examines the various interconnected systems and their evolution employed in integrated circuit technology. The subsequent chapters provide a detailed description of the physics of electromigration in both Al- and Cu-based interconnections, in the form of theoretical, experimental and numerical modeling studies. The differences in the electromigration of Al- and Cu-based interconnections and the corresponding underlying physical mechanisms for these differences are explained. The test structures, testing methodology, failure analysis methodology and statistical analysis of the test data for the experimental studies on electromigration are presented in a concise and rigorous manner. Methods of numerical modeling for the interconnect electromigration and their applications to the understanding of electromigration physics are described in detail with the aspects of material properties, interconnection design, and interconnect process parameters on the electromigration performances of interconnects in ULSI further elaborated upon. Finally, the extension of the studies to narrow interconnections is introduced, and future challenges on the study of electromigration are outlined and discussed | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING / Electronics / Circuits / Integrated |2 bisacsh | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING / Electronics / Circuits / General |2 bisacsh | |
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| 650 | 7 | |a Integrated circuits / Ultra large scale integration |2 fast | |
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Datensatz im Suchindex
| _version_ | 1804179163935932416 |
|---|---|
| any_adam_object | |
| author | Tan, Cher Ming 1959- |
| author_facet | Tan, Cher Ming 1959- |
| author_role | aut |
| author_sort | Tan, Cher Ming 1959- |
| author_variant | c m t cm cmt |
| building | Verbundindex |
| bvnumber | BV045344323 |
| classification_rvk | ZN 4952 |
| collection | ZDB-4-ENC |
| contents | Electromigration in ULSI Interconnections provides a comprehensive description of the electromigration in integrated circuits. It is intended for both beginner and advanced readers on electromigration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on electromigration, and examines the various interconnected systems and their evolution employed in integrated circuit technology. The subsequent chapters provide a detailed description of the physics of electromigration in both Al- and Cu-based interconnections, in the form of theoretical, experimental and numerical modeling studies. The differences in the electromigration of Al- and Cu-based interconnections and the corresponding underlying physical mechanisms for these differences are explained. The test structures, testing methodology, failure analysis methodology and statistical analysis of the test data for the experimental studies on electromigration are presented in a concise and rigorous manner. Methods of numerical modeling for the interconnect electromigration and their applications to the understanding of electromigration physics are described in detail with the aspects of material properties, interconnection design, and interconnect process parameters on the electromigration performances of interconnects in ULSI further elaborated upon. Finally, the extension of the studies to narrow interconnections is introduced, and future challenges on the study of electromigration are outlined and discussed |
| ctrlnum | (ZDB-4-ENC)ocn714877548 (OCoLC)714877548 (DE-599)BVBBV045344323 |
| dewey-full | 621.3815284 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815284 |
| dewey-search | 621.3815284 |
| dewey-sort | 3621.3815284 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Electronic eBook |
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| id | DE-604.BV045344323 |
| illustrated | Illustrated |
| indexdate | 2024-07-10T08:15:30Z |
| institution | BVB |
| isbn | 9789814273336 9814273333 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-030731027 |
| oclc_num | 714877548 |
| open_access_boolean | |
| physical | 1 online resource (xix, 291 pages) illustrations (some color) |
| psigel | ZDB-4-ENC |
| publishDate | 2010 |
| publishDateSearch | 2010 |
| publishDateSort | 2010 |
| publisher | World Scientific Pub. Co. |
| record_format | marc |
| series2 | International series on advances in solid state electronics and technology |
| spelling | Tan, Cher Ming 1959- Verfasser aut Electromigration in ULSI interconnections Cher Ming Tan Singapore ; Hackensack, N.J. World Scientific Pub. Co. 2010 1 online resource (xix, 291 pages) illustrations (some color) txt rdacontent c rdamedia cr rdacarrier International series on advances in solid state electronics and technology Print version record Electromigration in ULSI Interconnections provides a comprehensive description of the electromigration in integrated circuits. It is intended for both beginner and advanced readers on electromigration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on electromigration, and examines the various interconnected systems and their evolution employed in integrated circuit technology. The subsequent chapters provide a detailed description of the physics of electromigration in both Al- and Cu-based interconnections, in the form of theoretical, experimental and numerical modeling studies. The differences in the electromigration of Al- and Cu-based interconnections and the corresponding underlying physical mechanisms for these differences are explained. The test structures, testing methodology, failure analysis methodology and statistical analysis of the test data for the experimental studies on electromigration are presented in a concise and rigorous manner. Methods of numerical modeling for the interconnect electromigration and their applications to the understanding of electromigration physics are described in detail with the aspects of material properties, interconnection design, and interconnect process parameters on the electromigration performances of interconnects in ULSI further elaborated upon. Finally, the extension of the studies to narrow interconnections is introduced, and future challenges on the study of electromigration are outlined and discussed TECHNOLOGY & ENGINEERING / Electronics / Circuits / Integrated bisacsh TECHNOLOGY & ENGINEERING / Electronics / Circuits / General bisacsh Electrodiffusion fast Integrated circuits / Ultra large scale integration fast Integrated circuits Ultra large scale integration Electrodiffusion World Scientific (Firm) Sonstige oth 9789814273329 9814273325 |
| spellingShingle | Tan, Cher Ming 1959- Electromigration in ULSI interconnections Electromigration in ULSI Interconnections provides a comprehensive description of the electromigration in integrated circuits. It is intended for both beginner and advanced readers on electromigration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on electromigration, and examines the various interconnected systems and their evolution employed in integrated circuit technology. The subsequent chapters provide a detailed description of the physics of electromigration in both Al- and Cu-based interconnections, in the form of theoretical, experimental and numerical modeling studies. The differences in the electromigration of Al- and Cu-based interconnections and the corresponding underlying physical mechanisms for these differences are explained. The test structures, testing methodology, failure analysis methodology and statistical analysis of the test data for the experimental studies on electromigration are presented in a concise and rigorous manner. Methods of numerical modeling for the interconnect electromigration and their applications to the understanding of electromigration physics are described in detail with the aspects of material properties, interconnection design, and interconnect process parameters on the electromigration performances of interconnects in ULSI further elaborated upon. Finally, the extension of the studies to narrow interconnections is introduced, and future challenges on the study of electromigration are outlined and discussed TECHNOLOGY & ENGINEERING / Electronics / Circuits / Integrated bisacsh TECHNOLOGY & ENGINEERING / Electronics / Circuits / General bisacsh Electrodiffusion fast Integrated circuits / Ultra large scale integration fast Integrated circuits Ultra large scale integration Electrodiffusion |
| title | Electromigration in ULSI interconnections |
| title_auth | Electromigration in ULSI interconnections |
| title_exact_search | Electromigration in ULSI interconnections |
| title_full | Electromigration in ULSI interconnections Cher Ming Tan |
| title_fullStr | Electromigration in ULSI interconnections Cher Ming Tan |
| title_full_unstemmed | Electromigration in ULSI interconnections Cher Ming Tan |
| title_short | Electromigration in ULSI interconnections |
| title_sort | electromigration in ulsi interconnections |
| topic | TECHNOLOGY & ENGINEERING / Electronics / Circuits / Integrated bisacsh TECHNOLOGY & ENGINEERING / Electronics / Circuits / General bisacsh Electrodiffusion fast Integrated circuits / Ultra large scale integration fast Integrated circuits Ultra large scale integration Electrodiffusion |
| topic_facet | TECHNOLOGY & ENGINEERING / Electronics / Circuits / Integrated TECHNOLOGY & ENGINEERING / Electronics / Circuits / General Electrodiffusion Integrated circuits / Ultra large scale integration Integrated circuits Ultra large scale integration Electrodiffusion |
| work_keys_str_mv | AT tancherming electromigrationinulsiinterconnections AT worldscientificfirm electromigrationinulsiinterconnections |