MOSFET modeling for circuit analysis and design:
Saved in:
| Main Author: | |
|---|---|
| Format: | Electronic eBook |
| Language: | English |
| Published: |
Singapore ; Hackensack, NJ
World Scientific
2007
|
| Series: | International series on advances in solid state electronics and technology
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| Subjects: | |
| Item Description: | Print version record |
| Physical Description: | 1 online resource (xxiv, 418 pages) illustrations |
| ISBN: | 9789812707598 981270759X |
Staff View
MARC
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| 100 | 1 | |a Galup-Montoro, Carlos |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a MOSFET modeling for circuit analysis and design |c Carlos Galup-Montoro, Marcio Cherem Schneider |
| 264 | 1 | |a Singapore ; Hackensack, NJ |b World Scientific |c 2007 | |
| 300 | |a 1 online resource (xxiv, 418 pages) |b illustrations | ||
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| 490 | 0 | |a International series on advances in solid state electronics and technology | |
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| 505 | 8 | |a This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach. Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact ex | |
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Record in the Search Index
| _version_ | 1804179163185152000 |
|---|---|
| any_adam_object | |
| author | Galup-Montoro, Carlos |
| author_facet | Galup-Montoro, Carlos |
| author_role | aut |
| author_sort | Galup-Montoro, Carlos |
| author_variant | c g m cgm |
| building | Verbundindex |
| bvnumber | BV045343943 |
| collection | ZDB-4-ENC |
| contents | This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach. Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact ex |
| ctrlnum | (ZDB-4-ENC)ocn648317008 (OCoLC)648317008 (DE-599)BVBBV045343943 |
| dewey-full | 621.3815/284 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815/284 |
| dewey-search | 621.3815/284 |
| dewey-sort | 3621.3815 3284 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Electronic eBook |
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| id | DE-604.BV045343943 |
| illustrated | Illustrated |
| indexdate | 2024-07-10T08:15:30Z |
| institution | BVB |
| isbn | 9789812707598 981270759X |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-030730647 |
| oclc_num | 648317008 |
| open_access_boolean | |
| physical | 1 online resource (xxiv, 418 pages) illustrations |
| psigel | ZDB-4-ENC |
| publishDate | 2007 |
| publishDateSearch | 2007 |
| publishDateSort | 2007 |
| publisher | World Scientific |
| record_format | marc |
| series2 | International series on advances in solid state electronics and technology |
| spelling | Galup-Montoro, Carlos Verfasser aut MOSFET modeling for circuit analysis and design Carlos Galup-Montoro, Marcio Cherem Schneider Singapore ; Hackensack, NJ World Scientific 2007 1 online resource (xxiv, 418 pages) illustrations txt rdacontent c rdamedia cr rdacarrier International series on advances in solid state electronics and technology Print version record This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach. Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact ex TECHNOLOGY & ENGINEERING / Electronics / Transistors bisacsh Field-effect transistors / Mathematical models fast Metal oxide semiconductor field-effect transistors / Mathematical models fast Metal oxide semiconductor field-effect transistors Mathematical models Field-effect transistors Mathematical models Schaltungsentwurf (DE-588)4179389-4 gnd rswk-swf MOS-FET (DE-588)4207266-9 gnd rswk-swf MOS-FET (DE-588)4207266-9 s Schaltungsentwurf (DE-588)4179389-4 s 1\p DE-604 Schneider, Marcio Cherem Sonstige oth Erscheint auch als Druck-Ausgabe Galup-Montoro, Carlos MOSFET modeling for circuit analysis and design Singapore ; Hackensack, NJ : World Scientific, 2007 9812568107 9789812568106 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Galup-Montoro, Carlos MOSFET modeling for circuit analysis and design This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach. Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact ex TECHNOLOGY & ENGINEERING / Electronics / Transistors bisacsh Field-effect transistors / Mathematical models fast Metal oxide semiconductor field-effect transistors / Mathematical models fast Metal oxide semiconductor field-effect transistors Mathematical models Field-effect transistors Mathematical models Schaltungsentwurf (DE-588)4179389-4 gnd MOS-FET (DE-588)4207266-9 gnd |
| subject_GND | (DE-588)4179389-4 (DE-588)4207266-9 |
| title | MOSFET modeling for circuit analysis and design |
| title_auth | MOSFET modeling for circuit analysis and design |
| title_exact_search | MOSFET modeling for circuit analysis and design |
| title_full | MOSFET modeling for circuit analysis and design Carlos Galup-Montoro, Marcio Cherem Schneider |
| title_fullStr | MOSFET modeling for circuit analysis and design Carlos Galup-Montoro, Marcio Cherem Schneider |
| title_full_unstemmed | MOSFET modeling for circuit analysis and design Carlos Galup-Montoro, Marcio Cherem Schneider |
| title_short | MOSFET modeling for circuit analysis and design |
| title_sort | mosfet modeling for circuit analysis and design |
| topic | TECHNOLOGY & ENGINEERING / Electronics / Transistors bisacsh Field-effect transistors / Mathematical models fast Metal oxide semiconductor field-effect transistors / Mathematical models fast Metal oxide semiconductor field-effect transistors Mathematical models Field-effect transistors Mathematical models Schaltungsentwurf (DE-588)4179389-4 gnd MOS-FET (DE-588)4207266-9 gnd |
| topic_facet | TECHNOLOGY & ENGINEERING / Electronics / Transistors Field-effect transistors / Mathematical models Metal oxide semiconductor field-effect transistors / Mathematical models Metal oxide semiconductor field-effect transistors Mathematical models Field-effect transistors Mathematical models Schaltungsentwurf MOS-FET |
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