III–V Semiconducting Compounds:
The Electronic Properties Information Center has developed the Data Table as a precis of the most reliable information available for the physical, crystallographic, mechanical, thermal, electronic, magnetic and optical properties of a given material. Data Tables serve as an introduction to the graph...
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Boston, MA
Springer US
1971
|
| Schlagworte: | |
| Online-Zugang: | BTU01 Volltext |
| Zusammenfassung: | The Electronic Properties Information Center has developed the Data Table as a precis of the most reliable information available for the physical, crystallographic, mechanical, thermal, electronic, magnetic and optical properties of a given material. Data Tables serve as an introduction to the graphic data compilations on the material published by the Electronic Properties Information Center, EPIC, as Data Sheets. Although the Data Sheets are principally concerned, according to the scope of the Center, with electronic and optical data, it is believed that data covering the complete property spectrum is of the first importance to every scientist and engineer, whatever his information requirements. The enthusiastic reception of these Data Tables has confirmed this opinion and increasing requests for this highly selective type of information has resulted in these III·-V Semiconductor Compounds Data Tables. The major problem in this type of selective data compilation on a semiconducting material, lies in the material purity. Properties may vary so widely with doping, crystallinity, defects, geometric forms and the other parameters of preparation, that any attempts at comparison normally fail. On this basis, we have consis tently attempted to give values derived from experiments on the highest purity single crystals or epitaxial films. At the very least, these data should be reproducible and this gives the data their principal validity. If such values however, are not available, then the next best data are reported, together with material speci fications. These latter include the carrier concentration and the dopant |
| Beschreibung: | 1 Online-Ressource (V, 115 p) |
| ISBN: | 9781461596066 |
| DOI: | 10.1007/978-1-4615-9606-6 |
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Datensatz im Suchindex
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| spelling | Neuberger, M. Verfasser aut III–V Semiconducting Compounds by M. Neuberger Boston, MA Springer US 1971 1 Online-Ressource (V, 115 p) txt rdacontent c rdamedia cr rdacarrier The Electronic Properties Information Center has developed the Data Table as a precis of the most reliable information available for the physical, crystallographic, mechanical, thermal, electronic, magnetic and optical properties of a given material. Data Tables serve as an introduction to the graphic data compilations on the material published by the Electronic Properties Information Center, EPIC, as Data Sheets. Although the Data Sheets are principally concerned, according to the scope of the Center, with electronic and optical data, it is believed that data covering the complete property spectrum is of the first importance to every scientist and engineer, whatever his information requirements. The enthusiastic reception of these Data Tables has confirmed this opinion and increasing requests for this highly selective type of information has resulted in these III·-V Semiconductor Compounds Data Tables. The major problem in this type of selective data compilation on a semiconducting material, lies in the material purity. Properties may vary so widely with doping, crystallinity, defects, geometric forms and the other parameters of preparation, that any attempts at comparison normally fail. On this basis, we have consis tently attempted to give values derived from experiments on the highest purity single crystals or epitaxial films. At the very least, these data should be reproducible and this gives the data their principal validity. If such values however, are not available, then the next best data are reported, together with material speci fications. These latter include the carrier concentration and the dopant Engineering Electrical Engineering Electrical engineering Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd rswk-swf Bibliografie (DE-588)4006432-3 gnd rswk-swf 1\p (DE-588)4148875-1 Datensammlung gnd-content Drei-Fünf-Halbleiter (DE-588)4150649-2 s Bibliografie (DE-588)4006432-3 s 2\p DE-604 Erscheint auch als Druck-Ausgabe 9781461596080 https://doi.org/10.1007/978-1-4615-9606-6 Verlag URL des Erstveröffentlichers Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Neuberger, M. III–V Semiconducting Compounds Engineering Electrical Engineering Electrical engineering Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd Bibliografie (DE-588)4006432-3 gnd |
| subject_GND | (DE-588)4150649-2 (DE-588)4006432-3 (DE-588)4148875-1 |
| title | III–V Semiconducting Compounds |
| title_auth | III–V Semiconducting Compounds |
| title_exact_search | III–V Semiconducting Compounds |
| title_full | III–V Semiconducting Compounds by M. Neuberger |
| title_fullStr | III–V Semiconducting Compounds by M. Neuberger |
| title_full_unstemmed | III–V Semiconducting Compounds by M. Neuberger |
| title_short | III–V Semiconducting Compounds |
| title_sort | iii v semiconducting compounds |
| topic | Engineering Electrical Engineering Electrical engineering Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd Bibliografie (DE-588)4006432-3 gnd |
| topic_facet | Engineering Electrical Engineering Electrical engineering Drei-Fünf-Halbleiter Bibliografie Datensammlung |
| url | https://doi.org/10.1007/978-1-4615-9606-6 |
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