Electronic Properties of Semiconductor Interfaces:
Almost all semiconductor devices contain metal-semiconductor, insulator-semiconductor, insulator-metal and/or semiconductor-semiconductor interfaces; and their electronic properties determine the device characteristics. This is the first monograph that treats the electronic properties of all differe...
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Berlin, Heidelberg
Springer Berlin Heidelberg
2004
|
| Schriftenreihe: | Springer Series in Surface Sciences
43 |
| Schlagworte: | |
| Online-Zugang: | UBT01 Volltext |
| Zusammenfassung: | Almost all semiconductor devices contain metal-semiconductor, insulator-semiconductor, insulator-metal and/or semiconductor-semiconductor interfaces; and their electronic properties determine the device characteristics. This is the first monograph that treats the electronic properties of all different types of semiconductor interfaces. Using the continuum of interface–induced gap states (IFIGS) as the unifying concept, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling’s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively |
| Beschreibung: | 1 Online-Ressource (XI, 264 p) |
| ISBN: | 9783662069455 |
| DOI: | 10.1007/978-3-662-06945-5 |
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| 520 | |a Almost all semiconductor devices contain metal-semiconductor, insulator-semiconductor, insulator-metal and/or semiconductor-semiconductor interfaces; and their electronic properties determine the device characteristics. This is the first monograph that treats the electronic properties of all different types of semiconductor interfaces. Using the continuum of interface–induced gap states (IFIGS) as the unifying concept, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling’s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively | ||
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Datensatz im Suchindex
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| author | Mönch, Winfried |
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| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| doi_str_mv | 10.1007/978-3-662-06945-5 |
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| id | DE-604.BV045152140 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T08:10:07Z |
| institution | BVB |
| isbn | 9783662069455 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-030541808 |
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| physical | 1 Online-Ressource (XI, 264 p) |
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| publishDate | 2004 |
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| publisher | Springer Berlin Heidelberg |
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| series2 | Springer Series in Surface Sciences |
| spelling | Mönch, Winfried Verfasser aut Electronic Properties of Semiconductor Interfaces by Winfried Mönch Berlin, Heidelberg Springer Berlin Heidelberg 2004 1 Online-Ressource (XI, 264 p) txt rdacontent c rdamedia cr rdacarrier Springer Series in Surface Sciences 43 Almost all semiconductor devices contain metal-semiconductor, insulator-semiconductor, insulator-metal and/or semiconductor-semiconductor interfaces; and their electronic properties determine the device characteristics. This is the first monograph that treats the electronic properties of all different types of semiconductor interfaces. Using the continuum of interface–induced gap states (IFIGS) as the unifying concept, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling’s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively Materials Science Surfaces and Interfaces, Thin Films Optical and Electronic Materials Characterization and Evaluation of Materials Engineering, general Electronics and Microelectronics, Instrumentation Materials science Engineering Electronics Microelectronics Optical materials Electronic materials Materials / Surfaces Thin films Halbleitergrenzfläche (DE-588)4158802-2 gnd rswk-swf Elektronische Eigenschaft (DE-588)4235053-0 gnd rswk-swf Metall-Halbleiter-Kontakt (DE-588)4169590-2 gnd rswk-swf Metall-Halbleiter-Kontakt (DE-588)4169590-2 s Elektronische Eigenschaft (DE-588)4235053-0 s DE-604 Halbleitergrenzfläche (DE-588)4158802-2 s Erscheint auch als Druck-Ausgabe 9783642057786 https://doi.org/10.1007/978-3-662-06945-5 Verlag URL des Erstveröffentlichers Volltext |
| spellingShingle | Mönch, Winfried Electronic Properties of Semiconductor Interfaces Materials Science Surfaces and Interfaces, Thin Films Optical and Electronic Materials Characterization and Evaluation of Materials Engineering, general Electronics and Microelectronics, Instrumentation Materials science Engineering Electronics Microelectronics Optical materials Electronic materials Materials / Surfaces Thin films Halbleitergrenzfläche (DE-588)4158802-2 gnd Elektronische Eigenschaft (DE-588)4235053-0 gnd Metall-Halbleiter-Kontakt (DE-588)4169590-2 gnd |
| subject_GND | (DE-588)4158802-2 (DE-588)4235053-0 (DE-588)4169590-2 |
| title | Electronic Properties of Semiconductor Interfaces |
| title_auth | Electronic Properties of Semiconductor Interfaces |
| title_exact_search | Electronic Properties of Semiconductor Interfaces |
| title_full | Electronic Properties of Semiconductor Interfaces by Winfried Mönch |
| title_fullStr | Electronic Properties of Semiconductor Interfaces by Winfried Mönch |
| title_full_unstemmed | Electronic Properties of Semiconductor Interfaces by Winfried Mönch |
| title_short | Electronic Properties of Semiconductor Interfaces |
| title_sort | electronic properties of semiconductor interfaces |
| topic | Materials Science Surfaces and Interfaces, Thin Films Optical and Electronic Materials Characterization and Evaluation of Materials Engineering, general Electronics and Microelectronics, Instrumentation Materials science Engineering Electronics Microelectronics Optical materials Electronic materials Materials / Surfaces Thin films Halbleitergrenzfläche (DE-588)4158802-2 gnd Elektronische Eigenschaft (DE-588)4235053-0 gnd Metall-Halbleiter-Kontakt (DE-588)4169590-2 gnd |
| topic_facet | Materials Science Surfaces and Interfaces, Thin Films Optical and Electronic Materials Characterization and Evaluation of Materials Engineering, general Electronics and Microelectronics, Instrumentation Materials science Engineering Electronics Microelectronics Optical materials Electronic materials Materials / Surfaces Thin films Halbleitergrenzfläche Elektronische Eigenschaft Metall-Halbleiter-Kontakt |
| url | https://doi.org/10.1007/978-3-662-06945-5 |
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