Basically all properties of semiconductor devices are influenced by the distribution of point defects in their active areas. This book contains the first comprehensive review of the properties of intrinsic point defects, acceptor and donor impurities, isovalent atoms, chalcogens, and halogens in sil...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	Pichler, Peter (VerfasserIn)
Format:	Elektronisch E-Book
Sprache:	English
Veröffentlicht:	Vienna Springer Vienna 2004
Schriftenreihe:	Computational Microelectronics
Schlagworte:	Engineering Electronics and Microelectronics, Instrumentation Solid State Physics Spectroscopy and Microscopy Optical and Electronic Materials Solid state physics Spectroscopy Microscopy Electronics Microelectronics Optical materials Electronic materials Silicium Störstelle Diffusion Hochschulschrift
Online-Zugang:	FHI01 BTU01 URL des Erstveröffentlichers
Zusammenfassung:	Basically all properties of semiconductor devices are influenced by the distribution of point defects in their active areas. This book contains the first comprehensive review of the properties of intrinsic point defects, acceptor and donor impurities, isovalent atoms, chalcogens, and halogens in silicon, as well as of their complexes. Special emphasis is placed on compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behavior from experimental and theoretical investigations. In addition, the book discusses the fundamental concepts of silicon and its defects, the electron system, diffusion, thermodynamics, and reaction kinetics which form the scientific basis needed for a thorough understanding of the text. Therefore, the book is able to provide an introduction to newcomers in this field up to a comprehensive reference for experts in process technology, solid-state physics, and simulation of semiconductor processes
Beschreibung:	1 Online-Ressource (XXI, 554 p. 40 illus)
ISBN:	9783709105979
DOI:	10.1007/978-3-7091-0597-9