The physics and modeling of MOSFETS: surface-potential model HiSIM
Gespeichert in:
1. Verfasser: | |
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Format: | Elektronisch E-Book |
Sprache: | English |
Veröffentlicht: |
Singapore
World Scientific
c2008
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Schriftenreihe: | International series on advances in solid state electronics and technology
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Schlagworte: | |
Beschreibung: | xxii, 352 p. |
ISBN: | 9789812568649 9812568646 9789812812056 |
Internformat
MARC
LEADER | 00000nmm a2200000zc 4500 | ||
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001 | BV044851424 | ||
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020 | |a 9789812568649 |9 978-981-256-864-9 | ||
020 | |a 9812568646 |9 981-256-864-6 | ||
020 | |a 9789812812056 |9 978-981-281-205-6 | ||
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082 | 0 | |a 621.3815/284015118 |2 22 | |
100 | 1 | |a Miura-Mattausch, Mitiko |d 1949- |e Verfasser |4 aut | |
245 | 1 | 0 | |a The physics and modeling of MOSFETS |b surface-potential model HiSIM |c Mitiko Miura-Mattausch, Hans Jurgen Mattausch, Tatsuya Ezaki |
264 | 1 | |a Singapore |b World Scientific |c c2008 | |
300 | |a xxii, 352 p. | ||
336 | |b txt |2 rdacontent | ||
337 | |b c |2 rdamedia | ||
338 | |b cr |2 rdacarrier | ||
490 | 0 | |a International series on advances in solid state electronics and technology | |
505 | 8 | |a Includes bibliographical references and index | |
650 | 4 | |a Metal oxide semiconductor field-effect transistors | |
650 | 4 | |a Metal oxide semiconductor field-effect transistors |x Mathematical models | |
650 | 0 | 7 | |a MOS-FET |0 (DE-588)4207266-9 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Simulation |0 (DE-588)4055072-2 |2 gnd |9 rswk-swf |
689 | 0 | 0 | |a MOS-FET |0 (DE-588)4207266-9 |D s |
689 | 0 | 1 | |a Simulation |0 (DE-588)4055072-2 |D s |
689 | 0 | |8 1\p |5 DE-604 | |
700 | 1 | |a Mattausch, Hans Jurgen |e Sonstige |4 oth | |
700 | 1 | |a Ezaki, Tatsuya |e Sonstige |4 oth | |
912 | |a ZDB-38-ESG | ||
999 | |a oai:aleph.bib-bvb.de:BVB01-030246284 | ||
883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk |
Datensatz im Suchindex
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---|---|
any_adam_object | |
author | Miura-Mattausch, Mitiko 1949- |
author_facet | Miura-Mattausch, Mitiko 1949- |
author_role | aut |
author_sort | Miura-Mattausch, Mitiko 1949- |
author_variant | m m m mmm |
building | Verbundindex |
bvnumber | BV044851424 |
collection | ZDB-38-ESG |
contents | Includes bibliographical references and index |
ctrlnum | (ZDB-38-ESG)ebr10686047 (OCoLC)551762896 (DE-599)BVBBV044851424 |
dewey-full | 621.3815/284015118 |
dewey-hundreds | 600 - Technology (Applied sciences) |
dewey-ones | 621 - Applied physics |
dewey-raw | 621.3815/284015118 |
dewey-search | 621.3815/284015118 |
dewey-sort | 3621.3815 9284015118 |
dewey-tens | 620 - Engineering and allied operations |
discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
format | Electronic eBook |
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id | DE-604.BV044851424 |
illustrated | Not Illustrated |
indexdate | 2024-07-10T08:02:51Z |
institution | BVB |
isbn | 9789812568649 9812568646 9789812812056 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-030246284 |
oclc_num | 551762896 |
open_access_boolean | |
physical | xxii, 352 p. |
psigel | ZDB-38-ESG |
publishDate | 2008 |
publishDateSearch | 2008 |
publishDateSort | 2008 |
publisher | World Scientific |
record_format | marc |
series2 | International series on advances in solid state electronics and technology |
spelling | Miura-Mattausch, Mitiko 1949- Verfasser aut The physics and modeling of MOSFETS surface-potential model HiSIM Mitiko Miura-Mattausch, Hans Jurgen Mattausch, Tatsuya Ezaki Singapore World Scientific c2008 xxii, 352 p. txt rdacontent c rdamedia cr rdacarrier International series on advances in solid state electronics and technology Includes bibliographical references and index Metal oxide semiconductor field-effect transistors Metal oxide semiconductor field-effect transistors Mathematical models MOS-FET (DE-588)4207266-9 gnd rswk-swf Simulation (DE-588)4055072-2 gnd rswk-swf MOS-FET (DE-588)4207266-9 s Simulation (DE-588)4055072-2 s 1\p DE-604 Mattausch, Hans Jurgen Sonstige oth Ezaki, Tatsuya Sonstige oth 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
spellingShingle | Miura-Mattausch, Mitiko 1949- The physics and modeling of MOSFETS surface-potential model HiSIM Includes bibliographical references and index Metal oxide semiconductor field-effect transistors Metal oxide semiconductor field-effect transistors Mathematical models MOS-FET (DE-588)4207266-9 gnd Simulation (DE-588)4055072-2 gnd |
subject_GND | (DE-588)4207266-9 (DE-588)4055072-2 |
title | The physics and modeling of MOSFETS surface-potential model HiSIM |
title_auth | The physics and modeling of MOSFETS surface-potential model HiSIM |
title_exact_search | The physics and modeling of MOSFETS surface-potential model HiSIM |
title_full | The physics and modeling of MOSFETS surface-potential model HiSIM Mitiko Miura-Mattausch, Hans Jurgen Mattausch, Tatsuya Ezaki |
title_fullStr | The physics and modeling of MOSFETS surface-potential model HiSIM Mitiko Miura-Mattausch, Hans Jurgen Mattausch, Tatsuya Ezaki |
title_full_unstemmed | The physics and modeling of MOSFETS surface-potential model HiSIM Mitiko Miura-Mattausch, Hans Jurgen Mattausch, Tatsuya Ezaki |
title_short | The physics and modeling of MOSFETS |
title_sort | the physics and modeling of mosfets surface potential model hisim |
title_sub | surface-potential model HiSIM |
topic | Metal oxide semiconductor field-effect transistors Metal oxide semiconductor field-effect transistors Mathematical models MOS-FET (DE-588)4207266-9 gnd Simulation (DE-588)4055072-2 gnd |
topic_facet | Metal oxide semiconductor field-effect transistors Metal oxide semiconductor field-effect transistors Mathematical models MOS-FET Simulation |
work_keys_str_mv | AT miuramattauschmitiko thephysicsandmodelingofmosfetssurfacepotentialmodelhisim AT mattauschhansjurgen thephysicsandmodelingofmosfetssurfacepotentialmodelhisim AT ezakitatsuya thephysicsandmodelingofmosfetssurfacepotentialmodelhisim |