Low temperature epitaxial growth of semiconductors:
Low temperature processes for semiconductors have been recently under intensive development to fabricate controlled device structures with minute dimensions in order to achieve the highest device performance and new device functions as well as high integration density. Comprising reviews by experts...
Gespeichert in:
| Format: | Elektronisch E-Book |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Singapore
World Scientific Pub. Co.
c1991
|
| Schlagworte: | |
| Online-Zugang: | FHN01 URL des Erstveroeffentlichers |
| Zusammenfassung: | Low temperature processes for semiconductors have been recently under intensive development to fabricate controlled device structures with minute dimensions in order to achieve the highest device performance and new device functions as well as high integration density. Comprising reviews by experts long involved in the respective pioneering work, this volume makes a useful contribution toward maturing the process of low temperature epitaxy as a whole |
| Beschreibung: | vi, 343 p. ill |
| ISBN: | 9789814343022 |
Internformat
MARC
| LEADER | 00000nmm a2200000zc 4500 | ||
|---|---|---|---|
| 001 | BV044638405 | ||
| 003 | DE-604 | ||
| 005 | 00000000000000.0 | ||
| 007 | cr|uuu---uuuuu | ||
| 008 | 171120s1991 |||| o||u| ||||||eng d | ||
| 020 | |a 9789814343022 |9 978-981-4343-02-2 | ||
| 024 | 7 | |a 10.1142/0802 |2 doi | |
| 035 | |a (ZDB-124-WOP)00005603 | ||
| 035 | |a (OCoLC)1012727112 | ||
| 035 | |a (DE-599)BVBBV044638405 | ||
| 040 | |a DE-604 |b ger |e aacr | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-92 | ||
| 082 | 0 | |a 621.381/52 |2 22 | |
| 084 | |a UQ 2200 |0 (DE-625)146489: |2 rvk | ||
| 245 | 1 | 0 | |a Low temperature epitaxial growth of semiconductors |c edited by Takashi Hariu |
| 264 | 1 | |a Singapore |b World Scientific Pub. Co. |c c1991 | |
| 300 | |a vi, 343 p. |b ill | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b c |2 rdamedia | ||
| 338 | |b cr |2 rdacarrier | ||
| 520 | |a Low temperature processes for semiconductors have been recently under intensive development to fabricate controlled device structures with minute dimensions in order to achieve the highest device performance and new device functions as well as high integration density. Comprising reviews by experts long involved in the respective pioneering work, this volume makes a useful contribution toward maturing the process of low temperature epitaxy as a whole | ||
| 650 | 4 | |a Compound semiconductors | |
| 650 | 4 | |a Epitaxy | |
| 650 | 4 | |a Crystal growth | |
| 650 | 4 | |a Low temperatures | |
| 650 | 0 | 7 | |a Epitaxie |0 (DE-588)4152545-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleiterbauelement |0 (DE-588)4113826-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleiter |0 (DE-588)4022993-2 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a Halbleiter |0 (DE-588)4022993-2 |D s |
| 689 | 0 | 1 | |a Epitaxie |0 (DE-588)4152545-0 |D s |
| 689 | 0 | |8 1\p |5 DE-604 | |
| 689 | 1 | 0 | |a Halbleiterbauelement |0 (DE-588)4113826-0 |D s |
| 689 | 1 | |8 2\p |5 DE-604 | |
| 700 | 1 | |a Hariu, Takashi |e Sonstige |4 oth | |
| 776 | 0 | 8 | |i Erscheint auch als |n Druck-Ausgabe |z 9789971508395 |
| 776 | 0 | 8 | |i Erscheint auch als |n Druck-Ausgabe |z 9971508397 |
| 856 | 4 | 0 | |u http://www.worldscientific.com/worldscibooks/10.1142/0802#t=toc |x Verlag |z URL des Erstveroeffentlichers |3 Volltext |
| 912 | |a ZDB-124-WOP | ||
| 999 | |a oai:aleph.bib-bvb.de:BVB01-030036379 | ||
| 883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
| 883 | 1 | |8 2\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
| 966 | e | |u http://www.worldscientific.com/worldscibooks/10.1142/0802#t=toc |l FHN01 |p ZDB-124-WOP |q FHN_PDA_WOP |x Verlag |3 Volltext | |
Datensatz im Suchindex
| _version_ | 1804178055039549440 |
|---|---|
| any_adam_object | |
| building | Verbundindex |
| bvnumber | BV044638405 |
| classification_rvk | UQ 2200 |
| collection | ZDB-124-WOP |
| ctrlnum | (ZDB-124-WOP)00005603 (OCoLC)1012727112 (DE-599)BVBBV044638405 |
| dewey-full | 621.381/52 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.381/52 |
| dewey-search | 621.381/52 |
| dewey-sort | 3621.381 252 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Electronic eBook |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>02487nmm a2200541zc 4500</leader><controlfield tag="001">BV044638405</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">171120s1991 |||| o||u| ||||||eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9789814343022</subfield><subfield code="9">978-981-4343-02-2</subfield></datafield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1142/0802</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ZDB-124-WOP)00005603</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)1012727112</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV044638405</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">aacr</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-92</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.381/52</subfield><subfield code="2">22</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UQ 2200</subfield><subfield code="0">(DE-625)146489:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Low temperature epitaxial growth of semiconductors</subfield><subfield code="c">edited by Takashi Hariu</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Singapore</subfield><subfield code="b">World Scientific Pub. Co.</subfield><subfield code="c">c1991</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">vi, 343 p.</subfield><subfield code="b">ill</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Low temperature processes for semiconductors have been recently under intensive development to fabricate controlled device structures with minute dimensions in order to achieve the highest device performance and new device functions as well as high integration density. Comprising reviews by experts long involved in the respective pioneering work, this volume makes a useful contribution toward maturing the process of low temperature epitaxy as a whole</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Compound semiconductors</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Epitaxy</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Crystal growth</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Low temperatures</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Epitaxie</subfield><subfield code="0">(DE-588)4152545-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiterbauelement</subfield><subfield code="0">(DE-588)4113826-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Epitaxie</subfield><subfield code="0">(DE-588)4152545-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="8">1\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Halbleiterbauelement</subfield><subfield code="0">(DE-588)4113826-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="8">2\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Hariu, Takashi</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="776" ind1="0" ind2="8"><subfield code="i">Erscheint auch als</subfield><subfield code="n">Druck-Ausgabe</subfield><subfield code="z">9789971508395</subfield></datafield><datafield tag="776" ind1="0" ind2="8"><subfield code="i">Erscheint auch als</subfield><subfield code="n">Druck-Ausgabe</subfield><subfield code="z">9971508397</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">http://www.worldscientific.com/worldscibooks/10.1142/0802#t=toc</subfield><subfield code="x">Verlag</subfield><subfield code="z">URL des Erstveroeffentlichers</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-124-WOP</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-030036379</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">2\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">http://www.worldscientific.com/worldscibooks/10.1142/0802#t=toc</subfield><subfield code="l">FHN01</subfield><subfield code="p">ZDB-124-WOP</subfield><subfield code="q">FHN_PDA_WOP</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield></record></collection> |
| id | DE-604.BV044638405 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T07:57:53Z |
| institution | BVB |
| isbn | 9789814343022 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-030036379 |
| oclc_num | 1012727112 |
| open_access_boolean | |
| owner | DE-92 |
| owner_facet | DE-92 |
| physical | vi, 343 p. ill |
| psigel | ZDB-124-WOP ZDB-124-WOP FHN_PDA_WOP |
| publishDate | 1991 |
| publishDateSearch | 1991 |
| publishDateSort | 1991 |
| publisher | World Scientific Pub. Co. |
| record_format | marc |
| spelling | Low temperature epitaxial growth of semiconductors edited by Takashi Hariu Singapore World Scientific Pub. Co. c1991 vi, 343 p. ill txt rdacontent c rdamedia cr rdacarrier Low temperature processes for semiconductors have been recently under intensive development to fabricate controlled device structures with minute dimensions in order to achieve the highest device performance and new device functions as well as high integration density. Comprising reviews by experts long involved in the respective pioneering work, this volume makes a useful contribution toward maturing the process of low temperature epitaxy as a whole Compound semiconductors Epitaxy Crystal growth Low temperatures Epitaxie (DE-588)4152545-0 gnd rswk-swf Halbleiterbauelement (DE-588)4113826-0 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf Halbleiter (DE-588)4022993-2 s Epitaxie (DE-588)4152545-0 s 1\p DE-604 Halbleiterbauelement (DE-588)4113826-0 s 2\p DE-604 Hariu, Takashi Sonstige oth Erscheint auch als Druck-Ausgabe 9789971508395 Erscheint auch als Druck-Ausgabe 9971508397 http://www.worldscientific.com/worldscibooks/10.1142/0802#t=toc Verlag URL des Erstveroeffentlichers Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Low temperature epitaxial growth of semiconductors Compound semiconductors Epitaxy Crystal growth Low temperatures Epitaxie (DE-588)4152545-0 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Halbleiter (DE-588)4022993-2 gnd |
| subject_GND | (DE-588)4152545-0 (DE-588)4113826-0 (DE-588)4022993-2 |
| title | Low temperature epitaxial growth of semiconductors |
| title_auth | Low temperature epitaxial growth of semiconductors |
| title_exact_search | Low temperature epitaxial growth of semiconductors |
| title_full | Low temperature epitaxial growth of semiconductors edited by Takashi Hariu |
| title_fullStr | Low temperature epitaxial growth of semiconductors edited by Takashi Hariu |
| title_full_unstemmed | Low temperature epitaxial growth of semiconductors edited by Takashi Hariu |
| title_short | Low temperature epitaxial growth of semiconductors |
| title_sort | low temperature epitaxial growth of semiconductors |
| topic | Compound semiconductors Epitaxy Crystal growth Low temperatures Epitaxie (DE-588)4152545-0 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Halbleiter (DE-588)4022993-2 gnd |
| topic_facet | Compound semiconductors Epitaxy Crystal growth Low temperatures Epitaxie Halbleiterbauelement Halbleiter |
| url | http://www.worldscientific.com/worldscibooks/10.1142/0802#t=toc |
| work_keys_str_mv | AT hariutakashi lowtemperatureepitaxialgrowthofsemiconductors |