Terrestrial neutron-induced soft errors in advanced memory devices:
Terrestrial neutron-induced soft errors in semiconductor memory devices are currently a major concern in reliability issues. Understanding the mechanism and quantifying soft-error rates are primarily crucial for the design and quality assurance of semiconductor memory devices. This book covers the r...
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| Format: | Electronic eBook |
|---|---|
| Language: | English |
| Published: |
Singapore
World Scientific Pub. Co.
c2008
|
| Subjects: | |
| Online Access: | FHN01 Volltext |
| Summary: | Terrestrial neutron-induced soft errors in semiconductor memory devices are currently a major concern in reliability issues. Understanding the mechanism and quantifying soft-error rates are primarily crucial for the design and quality assurance of semiconductor memory devices. This book covers the relevant up-to-date topics in terrestrial neutron-induced soft errors, and aims to provide succinct knowledge on neutron-induced soft errors to the readers by presenting several valuable and unique features |
| Physical Description: | xxii, 343 p. ill. (some col.) |
| ISBN: | 9812778829 9789812778826 |
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| id | DE-604.BV044635266 |
| illustrated | Illustrated |
| indexdate | 2024-07-10T07:57:46Z |
| institution | BVB |
| isbn | 9812778829 9789812778826 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-030033238 |
| oclc_num | 1012717884 |
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| owner | DE-92 |
| owner_facet | DE-92 |
| physical | xxii, 343 p. ill. (some col.) |
| psigel | ZDB-124-WOP ZDB-124-WOP FHN_PDA_WOP |
| publishDate | 2008 |
| publishDateSearch | 2008 |
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| publisher | World Scientific Pub. Co. |
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| spelling | Terrestrial neutron-induced soft errors in advanced memory devices Takashi Nakamura ... [et al.] Singapore World Scientific Pub. Co. c2008 xxii, 343 p. ill. (some col.) txt rdacontent c rdamedia cr rdacarrier Terrestrial neutron-induced soft errors in semiconductor memory devices are currently a major concern in reliability issues. Understanding the mechanism and quantifying soft-error rates are primarily crucial for the design and quality assurance of semiconductor memory devices. This book covers the relevant up-to-date topics in terrestrial neutron-induced soft errors, and aims to provide succinct knowledge on neutron-induced soft errors to the readers by presenting several valuable and unique features Semiconductor storage devices Neutron irradiation Radiation dosimetry Nuclear physics Nakamura, Takashi 1939- Sonstige oth http://www.worldscientific.com/worldscibooks/10.1142/6661#t=toc Verlag URL des Erstveroeffentlichers Volltext |
| spellingShingle | Terrestrial neutron-induced soft errors in advanced memory devices Semiconductor storage devices Neutron irradiation Radiation dosimetry Nuclear physics |
| title | Terrestrial neutron-induced soft errors in advanced memory devices |
| title_auth | Terrestrial neutron-induced soft errors in advanced memory devices |
| title_exact_search | Terrestrial neutron-induced soft errors in advanced memory devices |
| title_full | Terrestrial neutron-induced soft errors in advanced memory devices Takashi Nakamura ... [et al.] |
| title_fullStr | Terrestrial neutron-induced soft errors in advanced memory devices Takashi Nakamura ... [et al.] |
| title_full_unstemmed | Terrestrial neutron-induced soft errors in advanced memory devices Takashi Nakamura ... [et al.] |
| title_short | Terrestrial neutron-induced soft errors in advanced memory devices |
| title_sort | terrestrial neutron induced soft errors in advanced memory devices |
| topic | Semiconductor storage devices Neutron irradiation Radiation dosimetry Nuclear physics |
| topic_facet | Semiconductor storage devices Neutron irradiation Radiation dosimetry Nuclear physics |
| url | http://www.worldscientific.com/worldscibooks/10.1142/6661#t=toc |
| work_keys_str_mv | AT nakamuratakashi terrestrialneutroninducedsofterrorsinadvancedmemorydevices |