Terrestrial neutron-induced soft errors in advanced memory devices:
Terrestrial neutron-induced soft errors in semiconductor memory devices are currently a major concern in reliability issues. Understanding the mechanism and quantifying soft-error rates are primarily crucial for the design and quality assurance of semiconductor memory devices. This book covers the r...
Gespeichert in:
Format: | Elektronisch E-Book |
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Sprache: | English |
Veröffentlicht: |
Singapore
World Scientific Pub. Co.
c2008
|
Schlagworte: | |
Online-Zugang: | FHN01 URL des Erstveroeffentlichers |
Zusammenfassung: | Terrestrial neutron-induced soft errors in semiconductor memory devices are currently a major concern in reliability issues. Understanding the mechanism and quantifying soft-error rates are primarily crucial for the design and quality assurance of semiconductor memory devices. This book covers the relevant up-to-date topics in terrestrial neutron-induced soft errors, and aims to provide succinct knowledge on neutron-induced soft errors to the readers by presenting several valuable and unique features |
Beschreibung: | xxii, 343 p. ill. (some col.) |
ISBN: | 9812778829 9789812778826 |
Internformat
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520 | |a Terrestrial neutron-induced soft errors in semiconductor memory devices are currently a major concern in reliability issues. Understanding the mechanism and quantifying soft-error rates are primarily crucial for the design and quality assurance of semiconductor memory devices. This book covers the relevant up-to-date topics in terrestrial neutron-induced soft errors, and aims to provide succinct knowledge on neutron-induced soft errors to the readers by presenting several valuable and unique features | ||
650 | 4 | |a Semiconductor storage devices | |
650 | 4 | |a Neutron irradiation | |
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format | Electronic eBook |
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id | DE-604.BV044635266 |
illustrated | Illustrated |
indexdate | 2024-07-10T07:57:46Z |
institution | BVB |
isbn | 9812778829 9789812778826 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-030033238 |
oclc_num | 1012717884 |
open_access_boolean | |
owner | DE-92 |
owner_facet | DE-92 |
physical | xxii, 343 p. ill. (some col.) |
psigel | ZDB-124-WOP ZDB-124-WOP FHN_PDA_WOP |
publishDate | 2008 |
publishDateSearch | 2008 |
publishDateSort | 2008 |
publisher | World Scientific Pub. Co. |
record_format | marc |
spelling | Terrestrial neutron-induced soft errors in advanced memory devices Takashi Nakamura ... [et al.] Singapore World Scientific Pub. Co. c2008 xxii, 343 p. ill. (some col.) txt rdacontent c rdamedia cr rdacarrier Terrestrial neutron-induced soft errors in semiconductor memory devices are currently a major concern in reliability issues. Understanding the mechanism and quantifying soft-error rates are primarily crucial for the design and quality assurance of semiconductor memory devices. This book covers the relevant up-to-date topics in terrestrial neutron-induced soft errors, and aims to provide succinct knowledge on neutron-induced soft errors to the readers by presenting several valuable and unique features Semiconductor storage devices Neutron irradiation Radiation dosimetry Nuclear physics Nakamura, Takashi 1939- Sonstige oth http://www.worldscientific.com/worldscibooks/10.1142/6661#t=toc Verlag URL des Erstveroeffentlichers Volltext |
spellingShingle | Terrestrial neutron-induced soft errors in advanced memory devices Semiconductor storage devices Neutron irradiation Radiation dosimetry Nuclear physics |
title | Terrestrial neutron-induced soft errors in advanced memory devices |
title_auth | Terrestrial neutron-induced soft errors in advanced memory devices |
title_exact_search | Terrestrial neutron-induced soft errors in advanced memory devices |
title_full | Terrestrial neutron-induced soft errors in advanced memory devices Takashi Nakamura ... [et al.] |
title_fullStr | Terrestrial neutron-induced soft errors in advanced memory devices Takashi Nakamura ... [et al.] |
title_full_unstemmed | Terrestrial neutron-induced soft errors in advanced memory devices Takashi Nakamura ... [et al.] |
title_short | Terrestrial neutron-induced soft errors in advanced memory devices |
title_sort | terrestrial neutron induced soft errors in advanced memory devices |
topic | Semiconductor storage devices Neutron irradiation Radiation dosimetry Nuclear physics |
topic_facet | Semiconductor storage devices Neutron irradiation Radiation dosimetry Nuclear physics |
url | http://www.worldscientific.com/worldscibooks/10.1142/6661#t=toc |
work_keys_str_mv | AT nakamuratakashi terrestrialneutroninducedsofterrorsinadvancedmemorydevices |