Holdings: Quantum effects, heavy doping, and the effective mass

Quantum effects, heavy doping, and the effective mass:

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Main Author:	Ghatak, Kamakhya Prasad 1953- (Author)
Format:	Book
Language:	English
Published:	New Jersey ; London ; Singapore ; Beijing ; Shanghai ; Hong Kong ; Taipei, Chennai ; Tokyo World Scientific [2017]
Series:	Series on the foundations of natural science and technology vol. 8
Subjects:	Dotierung Effektive Masse Halbleiter Quanteneffekt Nanostruktur
Online Access:	Inhaltsverzeichnis Inhaltsverzeichnis
Item Description:	Materials index: Seite 679-680. - Subject index: Seite 681-684
Physical Description:	lxx, 684 Seiten Diagramme
ISBN:	9789813146518 9813146516

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adam_text	Titel: Quantum effects, heavy doping and the effective mass Autor: Ghatak, Kamakhya Prasad Jahr: 2017 Creativity is neither brought nor taught but can only be caught from the master soul by the prepared mind Contents Preface vii Acknowledgments xliii About the Author liii 1. The EM in Quantum Wells (QWs) of Heavily Doped (HD) Non-Parabolic Materials 1 1.1 Introduction....................... 1 1.2 Theoretical Background................ 5 1.2.1 The EM in Quantum Wells (QWs) of HD nonlinear optical materials.......... 5 1.2.2 The EM in Quantum Wells (QWs) of HD IIF-V materials.................22 1.2.3 The EM in Quantum Wells (QWs) of HD II-VI materials.................39 1.2.4 The EM in Quantum Wells (QWs) of HD IV-VI materials................43 1.2.5 The EM in Quantum Wells (QWs) of HD stressed Kane type materials.........65 1.2.6 The EM in Quantum Wells (QWs) of HD Te 73 1.2.7 The EM in Quantum Wells (QWs) of HD Gallium Phosphide ..............76 1.2.8 The EM in Quantum Wells (QWs) of HD Platinum Antimonide.............82 lvii lviii Quantum Effects, Heavy Doping, and the Effective Mass 1.2.9 The EM in Quantum Wells (QWs) of HD Bismuth Telluride............... 87 1.2.10 The EM in Quantum Wells (QWs) of HD Germanium............... 89 1.2.11 The EM in Quantum Wells (QWs) of HD Gallium Antimonide.............. 99 1.2.12 The EM in Quantum Wells (QWs) of HD II-V materials.................102 1.2.13 The EM in Quantum Wells (QWs) of HD Lead Germanium Telluride..........104 1.2.14 The EM in Quantum Wells (QWs) of HD Zinc and Cadmium Diphosphides......105 1.3 Results and Discussion.................108 1.4 Open Research Problems................125 References...........................131 2. The EM in Doping Superlattices of HD Non-Parabolic Semiconductors 139 2.1 Introduction.......................139 2.2 Theoretical Background................139 2.2.1 The EM in doping superlattices of HD nonlinear optical semiconductors.......139 2.2.2 The EM in doping superlattices of HD III-V, ternary and quaternary semiconductors.................142 2.2.3 The EM in doping superlattices of HD II-VI semiconductors.................149 2.2.4 The EM in doping superlattices of HD IV-VI semiconductors.............151 2.2.5 The EM in doping superlattices of HD stressed Kane type semiconductors...... 155 2.3 Result and Discussions................. 157 2.4 Open Research Problems................ 166 References........................... 167 Contents lix The EM in Accumulation and Inversion Layers of Non-Parabolic Semiconductors 169 3.1 Introduction.......................169 3.2 Theoretical Background................170 3.2.1 The EM in accumulation and inversion layers of non-linear optical semiconductors . 170 3.2.2 The EM in accumulation and inversion layers of III-V, ternary and quaternary semiconductors.................174 3.2.3 The EM in accumulation and inversion layers of II-VT semiconductors........182 3.2.4 The EM in accumulation and inversion layers of IV-VI semiconductors........185 3.2.5 The EM in accumulation and inversion layers of stressed Kane type semiconductors.................187 3.2.6 The EM in accumulation and inversion layers of germanium.............. 191 3.3 Results and Discussion................. 192 3.4 Open Research Problems................ 198 References........................... 199 The EM in Nano-Wires (NWs) of Heavily Doped (HD) Non-Parabolic Materials 201 4.1 Introduction.......................201 4.2 Theoretical Background................202 4.2.1 The EM in NWs of HD nonlinear optical materials.................... 202 4.2.2 The EM in NWs of HD III-V materials ... 204 4.2.3 The EM in NWs of HD II-VI materials ... 213 4.2.4 The EM in NWs of HD IV-VI materials . . 215 4.2.5 The EM in NWs of HD stressed Kane type materials.................221 4.2.6 The EM in NWs of HD Te..........223 4.2.7 The EM in NWs of HD gallium phosphide....................225 Ix Quantum Effects, Heavy Doping, and the Effective Mass 4.2.8 The EM in NWs of HD platinum antimonide...................226 4.2.9 The EM in NWs of HD bismuth telluride.....................228 4.2.10 The EM in NWs of HD germanium...................230 4.2.11 The EM in NWs of HD gallium antimonide...................233 4.2.12 The EM in NWs of HD II-V materials ... 235 4.2.13 The EM in NWs of HD lead germanium telluride..............238 4.2.14 The EM in NWs of HD zinc and cadmium diphosphides..................241 4.3 Results and Discussion.................243 4.4 Open Research Problems................254 References...........................256 5. The EM in Heavily Doped (HD) Non-Parabolic Semiconductors Under Magnetic Quantization 259 5.1 Introduction.......................259 5.2 Theoretical Background................261 5.2.1 The EM in HD nonlinear optical semiconductors under magnetic quantization..................261 5.2.2 The DR in HD III-V semiconductors under magnetic quantization.............265 5.2.3 The DR in HD II-VI semiconductors under magnetic quantization.........271 5.2.4 The DR in HD IV-VI semiconductors under magnetic quantization.........271 5.2.5 The DR in HD stressed Kane type semiconductors under magnetic quantization..................278 5.2.6 The DR in HD Te under magnetic quantization..................279 Contents lxi 5.2.7 The DR in HD Gallium Phosphide under magnetic quantization.............280 5.2.8 The DR in HD Platinum Antimonideunder magnetic quantization.............281 5.2.9 The DR in HD Bismuth Telluride under magnetic quantization.............281 5.2.10 The DR in HD Germanium under magnetic quantization..................282 5.2.11 The DR in HD Gallium Antimonide under magnetic quantization.............283 5.2.12 The DR in HD II-V materials under magnetic quantization.............284 5.2.13 The DR in HD Lead Germanium Telluride under magnetic quantization.........286 5.3 Results and Discussion.................288 5.4 Open Research Problems................300 References...........................302 6. The EM Under Photo Excitation in HD Kane Type Semiconductors 305 6.1 Introduction.......................305 6.2 Theoretical Background................306 6.2.1 The formulation of EM in the presence of light waves in HD III-V, ternary and quaternary semiconductors........306 6.2.1.1 Results and discussion.......322 6.2.2 The EM under magnetic quantization in HD kane type semiconductors in the presence of light waves..................339 6.2.2.1 Results and discussion.......342 6.2.3 The EM under crossed electric and quantizing magnetic fields in HD Kane Type Semiconductors in the Presence of Light Waves.................345 lxii Quantum Effects, Heavy Doping, and the Effective Mass 6.2.4 The EM in QWs of HD Kane type semiconductors in the presence of light waves......................350 6.2.4.1 Result and discussions.......352 6.2.5 The EM in doping superlattices of HD kane type semiconductors in the presence of light waves......................356 6.2.5.1 Result and discussions.......359 6.2.6 The EM in accumulation and inversion layers of kane type semiconductors in the presence of light waves ............361 6.2.6.1 Result and discussions.......366 6.2.7 The EM in NWs of HD kane type semiconductors in the presence of light waves......................369 6.2.7.1 Result and discussions.......376 6.2.8 The EM in QWHD effective mass superlattices of kane type semiconductors in the presence of light waves.........377 6.2.8.1 Result and discussions.......382 6.2.9 The EM in NWHD effective mass superlattices of kane type semiconductors in the presence of light waves.........383 6.2.9.1 Result and discussions.......387 6.2.10 The magneto EM in HD effective mass superlattices of kane type semiconductors in the presence of light waves.........388 6.2.11 The EM in QWHD superlattices of kane type semiconductors with graded interfaces in the presence of light waves.........391 6.2.12 The EM in NWHD superlattices of kane type semiconductors with graded interfaces in the presence of light waves.........396 6.2.12.1 Result and discussion........399 Contents lxiii 6.2.13 The magneto EM in HD superlattices of kane type semiconductors with graded interfaces in the presence of light waves..................400 6.3 Open Research Problems................404 References...........................405 7. Few Related Applications 407 7.1 Introduction.......................407 7.2 Different Related Applications.............407 7.2.1 Thermoelectric power.............407 7.2.2 Debye screening length ............409 7.2.3 Carrier contribution to the elastic constants....................412 7.2.4 Diffusivity-mobility ratio...........412 7.2.5 Measurement of band-gap in the presence of light waves..................415 7.2.6 Diffusion coefficient of the minority carriers.....................419 7.2.7 Nonlinear optical response..........419 7.2.8 Third order nonlinear optical susceptibility.................. 420 7.2.9 Generalized raman gain............ 420 7.2.10 The plasma frequency............. 421 7.2.11 The activity coefficient ............ 421 7.2.12 Magneto-thermal effect in quantized structures.................... 422 7.2.13 Normalized hall coefficient .......... 423 7.2.14 Reflection coefficient.............. 424 7.2.15 Heat capacity ................. 424 7.2.16 Magnetic susceptibilities ........... 424 7.2.17 Faraday rotation................ 425 7.2.18 Fowler-nordheim field emission........ 426 7.2.19 Optical effective mass............. 426 7.2.20 Einstein s photoemission ........... 427 7.2.21 Righi-Leduc coefficient ............ 428 lxiv Quantum Effects, Heavy Doping, and the Effective Mass 7.2.22 Electric susceptibility.............428 7.2.23 Electric susceptibility mass..........429 7.2.24 Electron diffusion thermo-power.......429 7.2.25 Hydrostatic piezo-resistance coefficient . . . 429 7.2.26 Relaxation time for acoustic mode scattering....................430 7.2.27 Gate capacitance................430 7.3 Open Research Problems................431 References...........................431 8. Conclusion and Scope for Future Research 443 8.1 Open Research Problems................443 References...........................447 9. Appendix A: The Numerical Values of the Energy Band Constants of A Few Materials 449 References...........................455 10. Appendix B: The EM in HDs Under Cross-Fields Configuration 459 10.1 Introduction.......................459 10.2 Theoretical Background................460 10.2.1 The EM in HD nonlinear optical semiconductors under cross-fields configuration..................460 10.2.2 The EM in HD Kane type III-V semiconductors under cross-fields configuration..................465 10.2.3 The EM in HD II-VI semiconductors under cross-fields configuration ...........470 10.2.4 The EM in HD IV-VI semiconductors under cross-fields configuration........472 10.2.5 The EM in HD stressed Kane type semiconductors under cross-fields configuration..................476 Contents lxv 10.3 Open Research Problems................480 References...........................481 11. Appendix C: The EM Under Intense Electric Field in HD Kane Type Semiconductors 483 11.1 Introduction.......................483 11.2 Theoretical Background................484 11.2.1 The formulation of the electron dispersion law in the presence of intense electric field in HD III-V, ternary and quaternary semiconductors.................484 11.2.2 The EM under magnetic quantization in HD Kane Type Semiconductors in the Presence of intense electric field.............498 11.2.3 The EM in QWs in HD Kane type Semicon- ductors in the Presence of intense electric field.......................499 11.2.4 The EM in NWs in HD Kane type semicon- ductors in the presence of intense electric field.......................500 11.2.5 The magneto EM in QWs of HD Kane type semiconductors in the presence of intense electric field..................500 11.2.6 The EM in accumulation and inversion layers of kane type semiconductors in the presence of intense electric field .... 501 11.2.7 The EM in doping superlattices of HD kane type semiconductors in the presence of intense electric field.............503 11.2.8 The EM in QWHD effective mass superlattices of kane type semiconductors in the presence of intense electric field .... 504 11.2.9 The EM in NWHD effective mass superlattices of kane type semiconductors in the presence of intense electric field .... 506 lxvi Quantum Effects, Heavy Doping, and the Effective Mass 11.2.10 The magneto EM in QWHD effective mass superlattices of kane type semiconductors in the presence of intense electric field .... 507 11.2.11 The EM in QWHD superlattices of kane type semiconductors with graded interfaces in the presence of intense electric field .... 508 11.2.12 The EM in NWHD superlattices of kane type semiconductors with graded interfaces in the presence of intense electric field .... 513 11.2.13 The EM in quantum dot HD superlattices of kane type semiconductors with graded interfaces in the presence of intense electric field ..................516 11.2.14 The magneto EM in HD superlattices of kane type semiconductors with graded interfaces in the presence of intense electric field.......................517 11.2.15 The magneto EM in QWHD superlattices of kane type semiconductors with graded interfaces in the presence of intense electric field ..................520 11.3 Open Research Problems................521 References...........................522 12. Appendix D: The EM in QWHDSLs 523 12.1 Introduction.......................523 12.2 Theoretical Background................525 12.2.1 The EM in III-V quantum well HD superlattices with graded interfaces.....525 12.2.2 The DR in II-VI quantum well HD superlattices with graded interfaces.....529 12.2.3 The DR in IV-VI quantum well HD superlattices with graded interfaces.....532 12.2.4 The DR in HgTe/CdTe quantum well HD superlattices with graded interfaces.....534 Contents lxvii 12.2.5 The DR in strained layer quantum well HD superlattices with graded interfaces.....537 12.2.6 The DR in III-V quantum well HD effective mass super lattices...............540 12.2.7 The DR in II-VI quantum well HD effective mass super lattices...............543 12.2.8 The DR in IV-VI quantum well HD effective mass super lattices...............544 12.2.9 The DR in HgTe/CdTe quantum well HD effective mass super lattices..........546 12.2.10 The DR in strained layer quantum well HD effective mass super lattices.......547 12.3 Open Research Problem................549 References...........................550 13. Appendix E: The EM in Quantum Wire HDSLs 553 13.1 Introduction.......................553 13.2 Theoretical Background................553 13.2.1 The EM in III-V quantum wire HD superlattices with graded interfaces.....553 13.2.2 The DR in II-VI quantum wire HD superlattices with graded interfaces.....554 13.2.3 The DR in IV-VI quantum wire HD superlattices with graded interfaces.....555 13.2.4 The DR in HgTe/CdTe quantum wire HD superlattices with graded interfaces.....556 13.2.5 The DR in strained layer quantum wire HD superlattices with graded interfaces . . . 556 13.2.6 The DR in III-V quantum wire HD effective mass super lattices...............557 13.2.7 The DR in II-VI quantum wire HD effective mass super lattices...............558 13.2.8 The DR in IV-VI quantum wire HD effective mass super lattices...............558 13.2.9 The DR in HgTe/CdTe quantum wire HD effective mass super lattices..........559 lxviii Quantum Effects, Heavy Doping, and the Effective Mass 13.2.10 The DR in strained layer quantum wire HD effective mass super lattices....... 560 13.3 Open Research Problem................ 561 References........................... 561 14. Appendix F: The EM in HDSLs Under Magnetic Quantization 563 14.1 Introduction.......................563 14.2 Theoretical Background................563 14.2.1 The EM in III-V HD superlattices with graded interfaces under magnetic quantization..................563 14.2.2 The EM in II-VI HD superlattices with graded interfaces under magnetic quantization..................567 14.2.3 The EM in IV-VI HD superlattices with graded interfaces under magnetic quantization..................570 14.2.4 The EM in HgTe/CdTe HD superlattices with graded interfaces under magnetic quantization..................574 14.2.5 The EM in strained layer HD superlattices with graded interfaces under magnetic quantization..................577 14.2.6 The EM in III-V HD effective mass super lattices under magnetic quantization.....579 14.2.7 The EM in II-VI HD effective mass super lattices under magnetic quantization.....581 14.2.8 The EM in IV-VI HD effective mass super lattices under magnetic quantization.....582 14.2.9 The EM in HgTe/CdTe HD effective mass super lattices under magnetic quantization..................584 14.2.10 The EM in strained layer HD effective mass super lattices under magnetic quantization..................586 Contents lxix 14.3 Open Research Problems................587 References...........................588 15. Appendix G: The EM in Heavily Doped Ultra-thin Films (HDUFs) Under Cross-Fields Configuration 589 15.1 Introduction.......................589 15.2 Theoretical Background................590 15.2.1 The EM in Heavily Doped Ultra-thin Films (HDUFs) of nonlinear optical semiconductors under cross-fields configuration..................590 15.2.2 The EM in Heavily Doped Ultra-thin Films (HDUFs) of type III-V semiconductors under cross-fields configuration........591 15.2.3 The EM in Heavily Doped Ultra-thin Films (HDUFs) of II-VI semiconductors under cross-fields configuration ...........593 15.2.4 The EM in Heavily Doped Ultra-thin Films (HDUFs) of IV-VI semiconductors under cross-fields configuration........594 15.2.5 The EM in Heavily Doped Ultra-thin Films (HDUFs) of stressed semiconductors under cross-fields configuration ...........595 15.3 Open Research Problems................596 16. Appendix H: The EMs in Low Dimensional HD Systems in the Presence of Magnetic Field 599 16.1 Introduction.......................599 16.2 Theoretical Background................599 16.2.1 The EM in Quantum Wells of HD III-V, ternary and quaternary materials in the presence of magnetic field...........599 16.2.2 The EM in nano wires of HD III-V semiconductors in the presence of magnetic field.......................615 lxx Quantum Effects, Heavy Doping, and the Effective Mass 16.2.3 The EM in Quantum Wells of HD III-V semiconductors in the presence of cross fields......................625 16.2.4 The EM in nano-wires of HD III-V semiconductors in the presence of cross fields......................627 16.2.5 The EM in Quantum Wells of HD IV-VI semiconductors in the presence of magnetic field.......................629 16.2.6 The DR in nano wires of HD IV-VI semiconductors in the presence of magnetic field.......................648 16.2.7 The EM in Quantum Wells of HD III-V semiconductors in the presence of arbitrarily oriented magnetic field.....658 16.3 Open Research Problems................677 Materials Index 679 Subject Index 681
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author	Ghatak, Kamakhya Prasad 1953-
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id	DE-604.BV044540389
illustrated	Not Illustrated
indexdate	2024-07-10T07:55:23Z
institution	BVB
isbn	9789813146518 9813146516
language	English
lccn	2016025416
oai_aleph_id	oai:aleph.bib-bvb.de:BVB01-029939486
oclc_num	1012678384
open_access_boolean
owner	DE-355 DE-BY-UBR
owner_facet	DE-355 DE-BY-UBR
physical	lxx, 684 Seiten Diagramme
publishDate	2017
publishDateSearch	2017
publishDateSort	2017
publisher	World Scientific
record_format	marc
series	Series on the foundations of natural science and technology
series2	Series on the foundations of natural science and technology
spelling	Ghatak, Kamakhya Prasad 1953- (DE-588)136807135 aut Quantum effects, heavy doping, and the effective mass Kamakhya Prasad Ghatak, University of Engineering and Management, India New Jersey ; London ; Singapore ; Beijing ; Shanghai ; Hong Kong ; Taipei, Chennai ; Tokyo World Scientific [2017] lxx, 684 Seiten Diagramme txt rdacontent n rdamedia nc rdacarrier Series on the foundations of natural science and technology vol. 8 Materials index: Seite 679-680. - Subject index: Seite 681-684 Dotierung (DE-588)4130672-7 gnd rswk-swf Effektive Masse (DE-588)4400801-6 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf Quanteneffekt (DE-588)4356922-5 gnd rswk-swf Nanostruktur (DE-588)4204530-7 gnd rswk-swf Effektive Masse (DE-588)4400801-6 s Halbleiter (DE-588)4022993-2 s Dotierung (DE-588)4130672-7 s Nanostruktur (DE-588)4204530-7 s Quanteneffekt (DE-588)4356922-5 s DE-604 Series on the foundations of natural science and technology vol. 8 (DE-604)BV010382967 8 DE-601 application/pdf http://www.gbv.de/dms/tib-ub-hannover/861963873.pdf Inhaltsverzeichnis HBZ Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=029939486&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis
spellingShingle	Ghatak, Kamakhya Prasad 1953- Quantum effects, heavy doping, and the effective mass Series on the foundations of natural science and technology Dotierung (DE-588)4130672-7 gnd Effektive Masse (DE-588)4400801-6 gnd Halbleiter (DE-588)4022993-2 gnd Quanteneffekt (DE-588)4356922-5 gnd Nanostruktur (DE-588)4204530-7 gnd
subject_GND	(DE-588)4130672-7 (DE-588)4400801-6 (DE-588)4022993-2 (DE-588)4356922-5 (DE-588)4204530-7
title	Quantum effects, heavy doping, and the effective mass
title_auth	Quantum effects, heavy doping, and the effective mass
title_exact_search	Quantum effects, heavy doping, and the effective mass
title_full	Quantum effects, heavy doping, and the effective mass Kamakhya Prasad Ghatak, University of Engineering and Management, India
title_fullStr	Quantum effects, heavy doping, and the effective mass Kamakhya Prasad Ghatak, University of Engineering and Management, India
title_full_unstemmed	Quantum effects, heavy doping, and the effective mass Kamakhya Prasad Ghatak, University of Engineering and Management, India
title_short	Quantum effects, heavy doping, and the effective mass
title_sort	quantum effects heavy doping and the effective mass
topic	Dotierung (DE-588)4130672-7 gnd Effektive Masse (DE-588)4400801-6 gnd Halbleiter (DE-588)4022993-2 gnd Quanteneffekt (DE-588)4356922-5 gnd Nanostruktur (DE-588)4204530-7 gnd
topic_facet	Dotierung Effektive Masse Halbleiter Quanteneffekt Nanostruktur
url	http://www.gbv.de/dms/tib-ub-hannover/861963873.pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=029939486&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA
volume_link	(DE-604)BV010382967
work_keys_str_mv	AT ghatakkamakhyaprasad quantumeffectsheavydopingandtheeffectivemass

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