Quantum effects, heavy doping, and the effective mass:
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New Jersey ; London ; Singapore ; Beijing ; Shanghai ; Hong Kong ; Taipei, Chennai ; Tokyo
World Scientific
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| Schriftenreihe: | Series on the foundations of natural science and technology
vol. 8 |
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| Beschreibung: | Materials index: Seite 679-680. - Subject index: Seite 681-684 |
| Beschreibung: | lxx, 684 Seiten Diagramme |
| ISBN: | 9789813146518 9813146516 |
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| 245 | 1 | 0 | |a Quantum effects, heavy doping, and the effective mass |c Kamakhya Prasad Ghatak, University of Engineering and Management, India |
| 264 | 1 | |a New Jersey ; London ; Singapore ; Beijing ; Shanghai ; Hong Kong ; Taipei, Chennai ; Tokyo |b World Scientific |c [2017] | |
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Datensatz im Suchindex
| _version_ | 1804177898502881280 |
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| adam_text | Titel: Quantum effects, heavy doping and the effective mass
Autor: Ghatak, Kamakhya Prasad
Jahr: 2017
Creativity is neither brought nor taught
but can only be caught
from the master soul by the prepared mind
Contents
Preface vii
Acknowledgments xliii
About the Author liii
1. The EM in Quantum Wells (QWs) of
Heavily Doped (HD) Non-Parabolic Materials 1
1.1 Introduction....................... 1
1.2 Theoretical Background................ 5
1.2.1 The EM in Quantum Wells (QWs) of HD
nonlinear optical materials.......... 5
1.2.2 The EM in Quantum Wells (QWs) of HD
IIF-V materials.................22
1.2.3 The EM in Quantum Wells (QWs) of HD
II-VI materials.................39
1.2.4 The EM in Quantum Wells (QWs) of HD
IV-VI materials................43
1.2.5 The EM in Quantum Wells (QWs) of HD
stressed Kane type materials.........65
1.2.6 The EM in Quantum Wells (QWs) of HD Te 73
1.2.7 The EM in Quantum Wells (QWs) of HD
Gallium Phosphide ..............76
1.2.8 The EM in Quantum Wells (QWs) of HD
Platinum Antimonide.............82
lvii
lviii Quantum Effects, Heavy Doping, and the Effective Mass
1.2.9 The EM in Quantum Wells (QWs) of HD
Bismuth Telluride............... 87
1.2.10 The EM in Quantum Wells (QWs)
of HD Germanium............... 89
1.2.11 The EM in Quantum Wells (QWs) of HD
Gallium Antimonide.............. 99
1.2.12 The EM in Quantum Wells (QWs) of HD
II-V materials.................102
1.2.13 The EM in Quantum Wells (QWs) of HD
Lead Germanium Telluride..........104
1.2.14 The EM in Quantum Wells (QWs) of HD
Zinc and Cadmium Diphosphides......105
1.3 Results and Discussion.................108
1.4 Open Research Problems................125
References...........................131
2. The EM in Doping Superlattices of HD
Non-Parabolic Semiconductors 139
2.1 Introduction.......................139
2.2 Theoretical Background................139
2.2.1 The EM in doping superlattices of HD
nonlinear optical semiconductors.......139
2.2.2 The EM in doping superlattices of HD
III-V, ternary and quaternary
semiconductors.................142
2.2.3 The EM in doping superlattices of HD II-VI
semiconductors.................149
2.2.4 The EM in doping superlattices of HD
IV-VI semiconductors.............151
2.2.5 The EM in doping superlattices of HD
stressed Kane type semiconductors...... 155
2.3 Result and Discussions................. 157
2.4 Open Research Problems................ 166
References........................... 167
Contents lix
The EM in Accumulation and Inversion
Layers of Non-Parabolic Semiconductors 169
3.1 Introduction.......................169
3.2 Theoretical Background................170
3.2.1 The EM in accumulation and inversion
layers of non-linear optical semiconductors . 170
3.2.2 The EM in accumulation and inversion
layers of III-V, ternary and quaternary
semiconductors.................174
3.2.3 The EM in accumulation and inversion
layers of II-VT semiconductors........182
3.2.4 The EM in accumulation and inversion
layers of IV-VI semiconductors........185
3.2.5 The EM in accumulation and inversion
layers of stressed Kane type
semiconductors.................187
3.2.6 The EM in accumulation and inversion
layers of germanium.............. 191
3.3 Results and Discussion................. 192
3.4 Open Research Problems................ 198
References........................... 199
The EM in Nano-Wires (NWs) of Heavily
Doped (HD) Non-Parabolic Materials 201
4.1 Introduction.......................201
4.2 Theoretical Background................202
4.2.1 The EM in NWs of HD nonlinear optical
materials.................... 202
4.2.2 The EM in NWs of HD III-V materials ... 204
4.2.3 The EM in NWs of HD II-VI materials ... 213
4.2.4 The EM in NWs of HD IV-VI materials . . 215
4.2.5 The EM in NWs of HD stressed Kane
type materials.................221
4.2.6 The EM in NWs of HD Te..........223
4.2.7 The EM in NWs of HD gallium
phosphide....................225
Ix Quantum Effects, Heavy Doping, and the Effective Mass
4.2.8 The EM in NWs of HD platinum
antimonide...................226
4.2.9 The EM in NWs of HD bismuth
telluride.....................228
4.2.10 The EM in NWs of HD
germanium...................230
4.2.11 The EM in NWs of HD gallium
antimonide...................233
4.2.12 The EM in NWs of HD II-V materials ... 235
4.2.13 The EM in NWs of HD lead
germanium telluride..............238
4.2.14 The EM in NWs of HD zinc and cadmium
diphosphides..................241
4.3 Results and Discussion.................243
4.4 Open Research Problems................254
References...........................256
5. The EM in Heavily Doped (HD)
Non-Parabolic Semiconductors Under
Magnetic Quantization 259
5.1 Introduction.......................259
5.2 Theoretical Background................261
5.2.1 The EM in HD nonlinear optical
semiconductors under magnetic
quantization..................261
5.2.2 The DR in HD III-V semiconductors under
magnetic quantization.............265
5.2.3 The DR in HD II-VI semiconductors
under magnetic quantization.........271
5.2.4 The DR in HD IV-VI semiconductors
under magnetic quantization.........271
5.2.5 The DR in HD stressed Kane type
semiconductors under magnetic
quantization..................278
5.2.6 The DR in HD Te under magnetic
quantization..................279
Contents lxi
5.2.7 The DR in HD Gallium Phosphide under
magnetic quantization.............280
5.2.8 The DR in HD Platinum Antimonideunder
magnetic quantization.............281
5.2.9 The DR in HD Bismuth Telluride under
magnetic quantization.............281
5.2.10 The DR in HD Germanium under magnetic
quantization..................282
5.2.11 The DR in HD Gallium Antimonide under
magnetic quantization.............283
5.2.12 The DR in HD II-V materials under
magnetic quantization.............284
5.2.13 The DR in HD Lead Germanium Telluride
under magnetic quantization.........286
5.3 Results and Discussion.................288
5.4 Open Research Problems................300
References...........................302
6. The EM Under Photo Excitation in HD
Kane Type Semiconductors 305
6.1 Introduction.......................305
6.2 Theoretical Background................306
6.2.1 The formulation of EM in the presence
of light waves in HD III-V, ternary
and quaternary semiconductors........306
6.2.1.1 Results and discussion.......322
6.2.2 The EM under magnetic quantization in HD
kane type semiconductors in the presence
of light waves..................339
6.2.2.1 Results and discussion.......342
6.2.3 The EM under crossed electric
and quantizing magnetic fields in HD Kane
Type Semiconductors in the Presence
of Light Waves.................345
lxii Quantum Effects, Heavy Doping, and the Effective Mass
6.2.4 The EM in QWs of HD Kane type
semiconductors in the presence of light
waves......................350
6.2.4.1 Result and discussions.......352
6.2.5 The EM in doping superlattices of HD kane
type semiconductors in the presence of light
waves......................356
6.2.5.1 Result and discussions.......359
6.2.6 The EM in accumulation and inversion
layers of kane type semiconductors in the
presence of light waves ............361
6.2.6.1 Result and discussions.......366
6.2.7 The EM in NWs of HD kane type
semiconductors in the presence of light
waves......................369
6.2.7.1 Result and discussions.......376
6.2.8 The EM in QWHD effective mass
superlattices of kane type semiconductors
in the presence of light waves.........377
6.2.8.1 Result and discussions.......382
6.2.9 The EM in NWHD effective mass
superlattices of kane type semiconductors
in the presence of light waves.........383
6.2.9.1 Result and discussions.......387
6.2.10 The magneto EM in HD effective mass
superlattices of kane type semiconductors
in the presence of light waves.........388
6.2.11 The EM in QWHD superlattices of kane
type semiconductors with graded interfaces
in the presence of light waves.........391
6.2.12 The EM in NWHD superlattices of kane
type semiconductors with graded interfaces
in the presence of light waves.........396
6.2.12.1 Result and discussion........399
Contents lxiii
6.2.13 The magneto EM in HD superlattices
of kane type semiconductors with
graded interfaces in the presence
of light waves..................400
6.3 Open Research Problems................404
References...........................405
7. Few Related Applications 407
7.1 Introduction.......................407
7.2 Different Related Applications.............407
7.2.1 Thermoelectric power.............407
7.2.2 Debye screening length ............409
7.2.3 Carrier contribution to the elastic
constants....................412
7.2.4 Diffusivity-mobility ratio...........412
7.2.5 Measurement of band-gap in the presence
of light waves..................415
7.2.6 Diffusion coefficient of the minority
carriers.....................419
7.2.7 Nonlinear optical response..........419
7.2.8 Third order nonlinear optical
susceptibility.................. 420
7.2.9 Generalized raman gain............ 420
7.2.10 The plasma frequency............. 421
7.2.11 The activity coefficient ............ 421
7.2.12 Magneto-thermal effect in quantized
structures.................... 422
7.2.13 Normalized hall coefficient .......... 423
7.2.14 Reflection coefficient.............. 424
7.2.15 Heat capacity ................. 424
7.2.16 Magnetic susceptibilities ........... 424
7.2.17 Faraday rotation................ 425
7.2.18 Fowler-nordheim field emission........ 426
7.2.19 Optical effective mass............. 426
7.2.20 Einstein s photoemission ........... 427
7.2.21 Righi-Leduc coefficient ............ 428
lxiv Quantum Effects, Heavy Doping, and the Effective Mass
7.2.22 Electric susceptibility.............428
7.2.23 Electric susceptibility mass..........429
7.2.24 Electron diffusion thermo-power.......429
7.2.25 Hydrostatic piezo-resistance coefficient . . . 429
7.2.26 Relaxation time for acoustic mode
scattering....................430
7.2.27 Gate capacitance................430
7.3 Open Research Problems................431
References...........................431
8. Conclusion and Scope for Future Research 443
8.1 Open Research Problems................443
References...........................447
9. Appendix A: The Numerical Values
of the Energy Band Constants of A
Few Materials 449
References...........................455
10. Appendix B: The EM in HDs Under
Cross-Fields Configuration 459
10.1 Introduction.......................459
10.2 Theoretical Background................460
10.2.1 The EM in HD nonlinear optical
semiconductors under cross-fields
configuration..................460
10.2.2 The EM in HD Kane type III-V
semiconductors under cross-fields
configuration..................465
10.2.3 The EM in HD II-VI semiconductors under
cross-fields configuration ...........470
10.2.4 The EM in HD IV-VI semiconductors
under cross-fields configuration........472
10.2.5 The EM in HD stressed Kane type
semiconductors under cross-fields
configuration..................476
Contents lxv
10.3 Open Research Problems................480
References...........................481
11. Appendix C: The EM Under Intense Electric
Field in HD Kane Type Semiconductors 483
11.1 Introduction.......................483
11.2 Theoretical Background................484
11.2.1 The formulation of the electron dispersion
law in the presence of intense electric field
in HD III-V, ternary and quaternary
semiconductors.................484
11.2.2 The EM under magnetic quantization in HD
Kane Type Semiconductors in the Presence
of intense electric field.............498
11.2.3 The EM in QWs in HD Kane type Semicon-
ductors in the Presence of intense electric
field.......................499
11.2.4 The EM in NWs in HD Kane type semicon-
ductors in the presence of intense electric
field.......................500
11.2.5 The magneto EM in QWs of HD Kane type
semiconductors in the presence of intense
electric field..................500
11.2.6 The EM in accumulation and inversion
layers of kane type semiconductors
in the presence of intense electric field .... 501
11.2.7 The EM in doping superlattices of HD kane
type semiconductors in the presence
of intense electric field.............503
11.2.8 The EM in QWHD effective mass
superlattices of kane type semiconductors
in the presence of intense electric field .... 504
11.2.9 The EM in NWHD effective mass
superlattices of kane type semiconductors
in the presence of intense electric field .... 506
lxvi Quantum Effects, Heavy Doping, and the Effective Mass
11.2.10 The magneto EM in QWHD effective mass
superlattices of kane type semiconductors
in the presence of intense electric field .... 507
11.2.11 The EM in QWHD superlattices of kane
type semiconductors with graded interfaces
in the presence of intense electric field .... 508
11.2.12 The EM in NWHD superlattices of kane
type semiconductors with graded interfaces
in the presence of intense electric field .... 513
11.2.13 The EM in quantum dot HD superlattices
of kane type semiconductors with graded
interfaces in the presence of intense
electric field ..................516
11.2.14 The magneto EM in HD superlattices
of kane type semiconductors with graded
interfaces in the presence of intense electric
field.......................517
11.2.15 The magneto EM in QWHD superlattices
of kane type semiconductors with graded
interfaces in the presence of intense
electric field ..................520
11.3 Open Research Problems................521
References...........................522
12. Appendix D: The EM in QWHDSLs 523
12.1 Introduction.......................523
12.2 Theoretical Background................525
12.2.1 The EM in III-V quantum well HD
superlattices with graded interfaces.....525
12.2.2 The DR in II-VI quantum well HD
superlattices with graded interfaces.....529
12.2.3 The DR in IV-VI quantum well HD
superlattices with graded interfaces.....532
12.2.4 The DR in HgTe/CdTe quantum well HD
superlattices with graded interfaces.....534
Contents lxvii
12.2.5 The DR in strained layer quantum well HD
superlattices with graded interfaces.....537
12.2.6 The DR in III-V quantum well HD effective
mass super lattices...............540
12.2.7 The DR in II-VI quantum well HD effective
mass super lattices...............543
12.2.8 The DR in IV-VI quantum well HD effective
mass super lattices...............544
12.2.9 The DR in HgTe/CdTe quantum well HD
effective mass super lattices..........546
12.2.10 The DR in strained layer quantum well
HD effective mass super lattices.......547
12.3 Open Research Problem................549
References...........................550
13. Appendix E: The EM in Quantum Wire HDSLs 553
13.1 Introduction.......................553
13.2 Theoretical Background................553
13.2.1 The EM in III-V quantum wire HD
superlattices with graded interfaces.....553
13.2.2 The DR in II-VI quantum wire HD
superlattices with graded interfaces.....554
13.2.3 The DR in IV-VI quantum wire HD
superlattices with graded interfaces.....555
13.2.4 The DR in HgTe/CdTe quantum wire HD
superlattices with graded interfaces.....556
13.2.5 The DR in strained layer quantum wire
HD superlattices with graded interfaces . . . 556
13.2.6 The DR in III-V quantum wire HD effective
mass super lattices...............557
13.2.7 The DR in II-VI quantum wire HD effective
mass super lattices...............558
13.2.8 The DR in IV-VI quantum wire HD effective
mass super lattices...............558
13.2.9 The DR in HgTe/CdTe quantum wire HD
effective mass super lattices..........559
lxviii Quantum Effects, Heavy Doping, and the Effective Mass
13.2.10 The DR in strained layer quantum wire
HD effective mass super lattices....... 560
13.3 Open Research Problem................ 561
References........................... 561
14. Appendix F: The EM in HDSLs Under
Magnetic Quantization 563
14.1 Introduction.......................563
14.2 Theoretical Background................563
14.2.1 The EM in III-V HD superlattices with
graded interfaces under magnetic
quantization..................563
14.2.2 The EM in II-VI HD superlattices with
graded interfaces under magnetic
quantization..................567
14.2.3 The EM in IV-VI HD superlattices with
graded interfaces under magnetic
quantization..................570
14.2.4 The EM in HgTe/CdTe HD superlattices
with graded interfaces under magnetic
quantization..................574
14.2.5 The EM in strained layer HD superlattices
with graded interfaces under magnetic
quantization..................577
14.2.6 The EM in III-V HD effective mass super
lattices under magnetic quantization.....579
14.2.7 The EM in II-VI HD effective mass super
lattices under magnetic quantization.....581
14.2.8 The EM in IV-VI HD effective mass super
lattices under magnetic quantization.....582
14.2.9 The EM in HgTe/CdTe HD effective mass
super lattices under magnetic
quantization..................584
14.2.10 The EM in strained layer HD effective
mass super lattices under magnetic
quantization..................586
Contents lxix
14.3 Open Research Problems................587
References...........................588
15. Appendix G: The EM in Heavily Doped
Ultra-thin Films (HDUFs) Under
Cross-Fields Configuration 589
15.1 Introduction.......................589
15.2 Theoretical Background................590
15.2.1 The EM in Heavily Doped Ultra-thin Films
(HDUFs) of nonlinear optical
semiconductors under cross-fields
configuration..................590
15.2.2 The EM in Heavily Doped Ultra-thin Films
(HDUFs) of type III-V semiconductors
under cross-fields configuration........591
15.2.3 The EM in Heavily Doped Ultra-thin Films
(HDUFs) of II-VI semiconductors under
cross-fields configuration ...........593
15.2.4 The EM in Heavily Doped Ultra-thin Films
(HDUFs) of IV-VI semiconductors
under cross-fields configuration........594
15.2.5 The EM in Heavily Doped Ultra-thin Films
(HDUFs) of stressed semiconductors under
cross-fields configuration ...........595
15.3 Open Research Problems................596
16. Appendix H: The EMs in Low Dimensional
HD Systems in the Presence of Magnetic Field 599
16.1 Introduction.......................599
16.2 Theoretical Background................599
16.2.1 The EM in Quantum Wells of HD III-V,
ternary and quaternary materials in the
presence of magnetic field...........599
16.2.2 The EM in nano wires of HD III-V
semiconductors in the presence of magnetic
field.......................615
lxx Quantum Effects, Heavy Doping, and the Effective Mass
16.2.3 The EM in Quantum Wells of HD III-V
semiconductors in the presence of cross
fields......................625
16.2.4 The EM in nano-wires of HD III-V
semiconductors in the presence of cross
fields......................627
16.2.5 The EM in Quantum Wells of HD IV-VI
semiconductors in the presence of magnetic
field.......................629
16.2.6 The DR in nano wires of HD IV-VI
semiconductors in the presence of magnetic
field.......................648
16.2.7 The EM in Quantum Wells of HD III-V
semiconductors in the presence
of arbitrarily oriented magnetic field.....658
16.3 Open Research Problems................677
Materials Index 679
Subject Index 681
|
| any_adam_object | 1 |
| author | Ghatak, Kamakhya Prasad 1953- |
| author_GND | (DE-588)136807135 |
| author_facet | Ghatak, Kamakhya Prasad 1953- |
| author_role | aut |
| author_sort | Ghatak, Kamakhya Prasad 1953- |
| author_variant | k p g kp kpg |
| building | Verbundindex |
| bvnumber | BV044540389 |
| classification_rvk | UP 3150 |
| ctrlnum | (OCoLC)1012678384 (DE-599)GBV861963873 |
| discipline | Physik |
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| id | DE-604.BV044540389 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T07:55:23Z |
| institution | BVB |
| isbn | 9789813146518 9813146516 |
| language | English |
| lccn | 2016025416 |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-029939486 |
| oclc_num | 1012678384 |
| open_access_boolean | |
| owner | DE-355 DE-BY-UBR |
| owner_facet | DE-355 DE-BY-UBR |
| physical | lxx, 684 Seiten Diagramme |
| publishDate | 2017 |
| publishDateSearch | 2017 |
| publishDateSort | 2017 |
| publisher | World Scientific |
| record_format | marc |
| series | Series on the foundations of natural science and technology |
| series2 | Series on the foundations of natural science and technology |
| spelling | Ghatak, Kamakhya Prasad 1953- (DE-588)136807135 aut Quantum effects, heavy doping, and the effective mass Kamakhya Prasad Ghatak, University of Engineering and Management, India New Jersey ; London ; Singapore ; Beijing ; Shanghai ; Hong Kong ; Taipei, Chennai ; Tokyo World Scientific [2017] lxx, 684 Seiten Diagramme txt rdacontent n rdamedia nc rdacarrier Series on the foundations of natural science and technology vol. 8 Materials index: Seite 679-680. - Subject index: Seite 681-684 Dotierung (DE-588)4130672-7 gnd rswk-swf Effektive Masse (DE-588)4400801-6 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf Quanteneffekt (DE-588)4356922-5 gnd rswk-swf Nanostruktur (DE-588)4204530-7 gnd rswk-swf Effektive Masse (DE-588)4400801-6 s Halbleiter (DE-588)4022993-2 s Dotierung (DE-588)4130672-7 s Nanostruktur (DE-588)4204530-7 s Quanteneffekt (DE-588)4356922-5 s DE-604 Series on the foundations of natural science and technology vol. 8 (DE-604)BV010382967 8 DE-601 application/pdf http://www.gbv.de/dms/tib-ub-hannover/861963873.pdf Inhaltsverzeichnis HBZ Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=029939486&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Ghatak, Kamakhya Prasad 1953- Quantum effects, heavy doping, and the effective mass Series on the foundations of natural science and technology Dotierung (DE-588)4130672-7 gnd Effektive Masse (DE-588)4400801-6 gnd Halbleiter (DE-588)4022993-2 gnd Quanteneffekt (DE-588)4356922-5 gnd Nanostruktur (DE-588)4204530-7 gnd |
| subject_GND | (DE-588)4130672-7 (DE-588)4400801-6 (DE-588)4022993-2 (DE-588)4356922-5 (DE-588)4204530-7 |
| title | Quantum effects, heavy doping, and the effective mass |
| title_auth | Quantum effects, heavy doping, and the effective mass |
| title_exact_search | Quantum effects, heavy doping, and the effective mass |
| title_full | Quantum effects, heavy doping, and the effective mass Kamakhya Prasad Ghatak, University of Engineering and Management, India |
| title_fullStr | Quantum effects, heavy doping, and the effective mass Kamakhya Prasad Ghatak, University of Engineering and Management, India |
| title_full_unstemmed | Quantum effects, heavy doping, and the effective mass Kamakhya Prasad Ghatak, University of Engineering and Management, India |
| title_short | Quantum effects, heavy doping, and the effective mass |
| title_sort | quantum effects heavy doping and the effective mass |
| topic | Dotierung (DE-588)4130672-7 gnd Effektive Masse (DE-588)4400801-6 gnd Halbleiter (DE-588)4022993-2 gnd Quanteneffekt (DE-588)4356922-5 gnd Nanostruktur (DE-588)4204530-7 gnd |
| topic_facet | Dotierung Effektive Masse Halbleiter Quanteneffekt Nanostruktur |
| url | http://www.gbv.de/dms/tib-ub-hannover/861963873.pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=029939486&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV010382967 |
| work_keys_str_mv | AT ghatakkamakhyaprasad quantumeffectsheavydopingandtheeffectivemass |
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Inhaltsverzeichnis