Silicon-germanium strained layers and heterostructures:
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Bibliographische Detailangaben
Format: Elektronisch E-Book
Sprache:English
Veröffentlicht: San Diego, Calif. Academic 2003
Ausgabe:[2nd ed.]
Schriftenreihe:Semiconductors and semimetals v. 74
Schlagworte:
Online-Zugang:FAW01
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Beschreibung:Previous edition: published as Germanium-silicon strained layers and heterostuctures by Suresh C. Jain. Boston: Academic, 1994
The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance. Written for both students and senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures provides an essential up-date of this important topic, describing in particular the recent developments in technology and modelling. * Fully-revised and updated 2nd edition incorporating important recent breakthroughs and a complete literature review * The extensive bibliography of over 400 papers provides a comprehensive and coherent overview of the subject * Appropriate for students and senior researchers
Includes bibliographical references (pages 243-280) and index
Beschreibung:xiv, 308 pages
ISBN:0127521836
9780127521831

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