Plasma electronics: applications in microelectronic device fabrication
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| Main Authors: | , |
|---|---|
| Format: | Book |
| Language: | English |
| Published: |
Boca Raton ; London ; New York
CRC Press
2016
|
| Edition: | Second edition, first issued in paperback |
| Subjects: | |
| Online Access: | Inhaltsverzeichnis Klappentext |
| Physical Description: | xxxv, 376 Seiten Diagramme |
| ISBN: | 9781138034150 9781482222050 |
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Record in the Search Index
| _version_ | 1804177625880461312 |
|---|---|
| adam_text | Contents
A
Preface to the First Edition xv
Preface to the Second Edition xvii
About the Authors xix
List of Figures xxi
List of Tables xxxiii
Chapter 1 ■ Introduction 1
1.1 PLASMA AND ITS CLASSIFICATION 1
1.2 APPLICATION OF LOW-TEMPERATURE PLASMA 2
1.3 ACADEMIC FUSION 3
REFERENCES 5
Chapter 2 ■ Phenomenological Description of the Charged
Particle Transport 7
2.1 TRANSPORT IN REAL (CONFIGURATION) SPACE 7
2.1.1 Momentum Balance of Electrons 8
2.1.2 Energy Balance of Electrons 9
2.2 TRANSPORT IN VELOCITY SPACE 12
2.2.1 Electron Velocity Distribution and
Swarm Parameters 13
2.2.2 Ion Velocity Distribution and Mean Energy 20
2.3 THERMAL EQUILIBRIUM AND ITS GOVERNING
RELATIONS 23
v
vi ■ Contents
2.3.1 Boltzmann Distribution in Real Space 23
2.3.2 Maxwell Distribution in Velocity Space 24
REFERENCES 28
Chapter 3 ■ Macroscopic Plasma Characteristics 29
3.1 INTRODUCTION 29
3.2 QUASI-NEUTRALITY 29
3.3 CHARGE-SEPARATION IN PIASMAS 30
3.3.1 Spatial Scale of Charge-Separation 30
3.3.2 Time Scale for Charge-Separation 31
3.4 PLASMA SHIELDING 32
3.4.1 Debye Shielding 32
3.4.2 Metal Probe in a Plasma 33
3.5 PARTICLE DIFFUSION 36
3.5.1 Ambipolar Diffusion 36
3.5.2 Spatial and Time Scale of Diffusion 37
3.6 BOHM SHEATH CRITERION 39
3.6.1 Bohm Velocity 39
3.6.2 Floating Potential 40
REFERENCES 41
Chapter 4 ■ Elementary Processes in Gas Phase and on
Surfaces 43
4.1 PARTICLES AND WAVES 44
4.1.1 Particle Representation in Classical and
Quantum Mechanics 44
4.1.2 Locally Isolated Particle Group and Wave
Packets 46
4.2 COLLISIONS AND CROSS SECTIONS 48
4.2.1 Conservation Laws in Collisions 49
4.2.2 Definition of Collision Cross Sections 51
4.2.3 The Distribution of Free Paths 55
4.2.4 Representation of Collisions in Laboratory and
CM Reference Frames 56
4.3 CLASSICAL COLLISION THEORY 59
Contents ■
4.3.1 Scattering in Classical Mechanics 60
4.3.2 Conditions for the Applicability of the Classical
Scattering Theory 66
4.4 QUANTUM THEORY OF SCATTERING 66
4.4.1 Differential Scattering Cross Section a(9) 68
4.4.2 Modified Effective Range Theory in Electron
Scattering 73
4.5 COLLISIONS BETWEEN ELECTRONS AND NEUTRAL
ATOMS/MOLECULES 74
4.5.1 Resonant Scattering 75
4.6 ELECTRON-ATOM COLLISIONS 77
4.6.1 Energy Levels of Atoms 77
4.6.2 Electron-Atom Scattering Cross Sections 79
4.7 ELECTRON-MOLECULE COLLISIONS 83
4.7.1 Rotational, Vibrational, and Electronic Energy
Levels of Molecules 84
4.7.2 Rotational Excitation 85
4.7.2.1 Rotational Energy Levels 85
4.7.2.2 Rotational Excitation Cross Sections 88
4.7.3 Vibrational Excitation 89
4.7.3.1 Vibrational Energy Levels 89
4.7.3.2 Vibrational Cross Sections 91
4.7.4 Electronic Excitation and Dissociation 92
4.7.4.1 Electronic States of Molecules 92
4.7.4.2 Cross Sections for Electronic Excita-
tion of Molecules 94
4.7.5 Electron Collisions with Excited Atoms
and Molecules 94
4.8 NONCONSERVATIVE COLLISIONS OF ELECTRONS
WITH ATOMS AN D MOLECU LES 98
4.8.1 Electron-Induced Ionization 98
4.8.2 Electron Attachment 100
4.8.2.1 Dissociative Electron Attachment 101
4.8.2.2 Nondissociative Electron Attachment 103
4.8.2.3 Ion Pair Formation 104
4.8.2.4 Electron Attachment to Excited
Molecules 104
Rate Coefficients for Attachment 105
4.8.2.5
viii ■ Contents
4.8.3 Electron-Ion and Ion—Ion Recombination 106
4.8.4 Electron-Ion and Electron-Electron Collisions 108
4.9 HEAVY PARTICLE COLLISIONS 109
4.9.1 Ion-Molecule Collisions 109
4.9.1.1 Charge Transfer, Elastic, and Inelas-
tic Scattering of Ions 110
4.9.1.2 Ion-Molecule Reactions 112
4.9.2 Collisions of Fast Neutrals 114
4.9.3 Collisions of Excited Particles 115
4.9.3.1 Chemi-Ionization and Penning Ion-
ization 115
4.9.4 Collisions of Slow Neutrals and Rate Coefficients 120
4.9.4.1 Quenching and Transport of Excited
States 120
4.9.4.2 Kinetics of Rotational and Vibra-
tional Levels 123
4.10 PHOTONS IN IONIZED GASES 124
4.10.1 Emission and Absorption of Line Radiation 125
4.10.2 Resonant Radiation Trapping 127
4.11 ELEMENTARY PROCESSES AT SURFACES 128
4.11.1 Energy Levels of Electrons in Solids 129
4.11.2 Emission of Electrons from Surfaces 132
4.11.2.1 Photo-Emission 132
4.11.2.2 Thermionic Emission 133
4.11.2.3 Field-Induced Emission 133
4.11.2.4 Potential Ejection of Electrons from
Surfaces by Ions and Excited Atoms 136
4.11.3 Emission of Ions and Neutrals from Surfaces 139
4.11.3.1 Surface Neutralization 140
4.11.3.2 Surface Ionization 141
4.11.4 Adsorption 143
REFERENCES 145
Chapter 5 »The Boltzmann Equation and Transport Equa-
tions of Charged Particles 147
5.1 INTRODUCTION
147
Contents ■ ix
5.2 THE BOLTZMANN EQUATION 147
5.2.1 Transport in Phase Space and Derivation of the
Boltzmann Equation 148
5.3 TRANSPORT COEFFICIENTS 150
5.4 THE TRANSPORT EQUATION 154
5.4.1 Conservation of Number Density 155
5.4.2 Conservation of Momentum 155
5.4.3 Conservation of Energy 156
5.5 COLLISION TERM IN THE BOLTZMANN EQUATION 157
5.5.1 Collision Integral 157
5.5.2 Collision Integral between an Electron and a
Gas Molecule 158
5.5.2.1 Elastic Collision Term Jeias 159
5.5.2.2 Excitation Collision Term Jex 161
5.5.2.3 Ionization Collision Term Jion 162
5.5.2.4 Electron Attachment Collision Term
Jatt 163
5.6 BOLTZMANN EQUATION FOR ELECTRONS 164
5.6.1 Spherical Harmonics and Their Properties 164
5.6.2 Velocity Distribution of Electrons 167
5.6.2.1 Velocity Distribution under Uniform
Number Density: g° 168
5.6.2.2 Velocity Distribution Proportional
to Vrn(r, t): gl 169
5.6.3 Electron Transport Parameters 176
REFERENCES 179
Chapter 6 ■ General Properties of Charged Particle
Transport in Gases 181
6.1 INTRODUCTION 181
6.2 ELECTRON TRANSPORT IN DC-ELECTRIC FIELDS 181
6.2.1 Electron Drift Velocity 182
6.2.2 Diffusion Coefficients 184
6.2.3 Mean Energy of Electrons 187
6.2.4 Excitation, Ionization, and Electron Attach-
ment Rates
187
x ■ Contents
6.3 ELECTRON TRANSPORT IN RADIO-FREQUENCY
ELECTRIC FIELDS 188
6.3.1 Relaxation Time Constants 190
6.3.2 Effective Field Approximation 195
6.3.3 Expansion Procedure 198
6.3.4 Direct Numerical Procedure 202
6.3.5 Time-Varying Swarm Parameters 206
6.4 ION TRANSPORT IN DC-ELECTRIC FIELDS 208
REFERENCES 210
Chapter 7 ■ Modeling of Nonequilibrium (Low-Temperature)
Plasmas 213
7.1 INTRODUCTION 213
7.2 CONTINUUM MODELS 214
7.2.1 Governing Equations of a Continuum Model 215
7.2.2 Local Field Approximation (LFA) 218
7.2.3 Quasi-Thermal Equilibrium (QTE) Model 219
7.2.4 Relaxation Continuum (RCT) Model 220
7.2.5 Phase Space Kinetic Model 222
7.3 PARTICLE MODELS 224
7.3.1 Monte Carlo Simulations (MCSs) 225
7.3.2 Particle-in-Cell (PIC) and Particle-in-Cell/
Monte Carlo Simulation (PIC/MCS) Models 227
7.4 HYBRID MODELS 229
7.5 CIRCUIT MODEL 229
7.5.1 Equivalent Circuit Model in CCP 230
7.5.2 Equivalent Circuit Model in ICP 231
7.5.3 Transmission-Line Model (TLM) 231
7.6 ELECTROMAGNETIC FIELDS AND MAXWELL S
EQUATIONS 233
7.6.1 Coulomb’s Law, Gauss’s Law, and Poisson’s
Equation 234
7.6.2 Faraday’s Law 234
7.6.3 Ampere’s Law 235
7.6.4 Maxwell’s Equations 236
REFERENCES 236
Contents ■ xi
Chapter 8 ■ Numerical Procedure of Modeling 239
8.1 TIME CONSTANT OF THE SYSTEM 239
8.1.1 Collision-Oriented Relaxation Time 239
8.1.2 Plasma Species-Oriented Time Constant 240
8.1.3 Plasma-Oriented Time Constant/Dielectric
Relaxation Time 241
8.2 NUMERICAL TECHNIQUES TO SOLVE THE TIME-
DEPENDENT DRIFT-DIFFUSION EQUATION 243
8.2.1 Time-Evolution Method 243
8.2.1.1 Finite Difference 244
8.2.1.2 Digitalization and Stabilization 245
8.2.1.3 Time Discretization and Accuracy 247
8.2.2 Scharfetter-Gummel Method 248
8.2.3 Cubic Interpolated Pseudoparticle Method 251
8.2.4 Semi-Implicit Method for Solving Poisson’s
Equation 253
8.3 BOUNDARY CONDITIONS 253
8.3.1 Ideal Boundary — Without Surface Interactions 253
8.3.1.1 Dirichlet Condition 253
8.3.1.2 Neumann Condition 254
8.3.1.3 Periodicity Condition 255
8.3.2 Electrode Surface 256
8.3.2.1 Metallic Electrode 256
8.3.2.2 Dielectric Electrode 257
8.3.3 Boundary Conditions with Charge Exchange 257
8.3.4 Boundary Conditions with Mass Transport 258
8.3.4.1 Plasma Etching 258
8.3.4.2 Plasma Deposition 259
8.3.4.3 Plasma Sputtering 259
8.3.5 Moving Boundary under Processing 260
REFERENCES 261
Chapter 9 ■ Capacitively Coupled Plasma 263
9.1 RADIO-FREQUENCY CAPACITIVE COUPLING 263
9.2 MECHANISM OF PIASMA MAINTENANCE 263
xii ■ Contents
9.2.1 Low-Frequency Plasma 266
9.2.2 High-Frequency Plasma 268
9.2.3 Electronegative Plasma 271
9.2.4 Very High-Frequency Plasma 274
9.2.5 Two-Frequency Plasma 276
9.2.6 Pulsed Two-Frequency Plasma 279
REFERENCES 283
Chapter 10· Inductively Coupled Plasma____________ 285
10.1 RADIO-FREQUENCY INDUCTIVE COUPLING 285
10.2 MECHANISM OF PLASMA MAINTENANCE 285
10.2.1 E-mode and H-mode 285
10.2.2 Mechanism of Plasma Maintenance 287
10.2.3 Effect of Metastables 288
10.2.4 Function of ICP 293
10.3 PHASE TRANSITION BETWEEN E-MODE AND
H-MODE IN AN ICP 294
10.4 WAVE PROPAGATION IN PLASMAS 295
10.4.1 Plasma and Skin Depth 295
10.4.2 ICP and the Skin Depth 299
REFERENCES 301
Chapter 11· Magnetically Enhanced Plasma 303
11.1 DIRECT-CURRENT MAGNETRON PLASMA 303
11.2 UNBALANCED MAGNETRON P1ASMA 307
11.3 RADIO-FREQUENCY MAGNETRON PLASMA 307
11.4 MAGNETIC CONFINEMENTS OF PLASMAS 310
11.5 MAGNETICALLY RESONANT PLASMAS 311
REFERENCES 313
Chapter 12 ■ Plasma Processing and Related Topics_ 315
12.1 INTRODUCTION 315
12.2 PHYSICAL SPUTTERING 315
12.2.1 Target Erosion 321
Contents ■ xiii
12.2.2 Sputtered Particle Transport 322
12.3 PLASMA CHEMICAL VAPOR DEPOSITION 324
12.3.1 Plasma CVD 325
12.3.2 Large-Area Deposition with High Rate 327
12.4 PLASMA ETCHING 329
12.4.1 Wafer Bias 331
12.4.1.1 On Electrically Isolated Wafers
(without Radio-Frequency Bias) 332
12.4.1.2 On Wafers with Radio-Frequency
Bias 332
12.4.2 Selection of Feed Gas 333
12.4.3 Si or Poly-Si Etching 334
12.4.4 A1 Etching 335
12.4.5 Si02 Etching 337
12.4.6 Feature Profile Evolution 337
12.4.7 Plasma Bosch Process 343
12.4.8 Charging Damage 346
12.4.8.1 Surface Continuity and Conductivity 346
12.4.8.2 Charging Damage to Lower Thin
Elements in ULSI 350
12.4.9 Thermal Damage 350
12.4.10 Specific Fabrication of MOS Transistor 351
12.4.10.1 Gate Etching 351
12.4.10.2 Contact Hole Etching 352
12.4.10.3 Low-K etching 354
12.4.11 MEMS Fabrication 356
REFERENCES 357
Chapter 13· Atmospheric-Pressure, Low-Temperature Plasma 359
13.1 HIGH PRESSURE, LOW-TEMPERATURE PLASMA 359
13.1.1 Fundamental Process 359
13.1.2 Historical Development 360
13.2 MICRO PLASMA 361
13.2.1 Radiofrequency Atmospheric Micro-Plasma
Source 361
13.2.2 Gas Heating in a Plasma 361
xiv ■ Contents
13.2.3 Effect of Local Gas Heating
REFERENCES
363
366
Index
369
Physics / Applied Industrial Physics
Beyond enabling new capabilities, plasma-based techniques, characterized
by quantum radicals of feed gases, hold the potential to enhance and
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ISBN 978-1-138-03415-0
CRC Press
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9 78113
|
| any_adam_object | 1 |
| author | Makabe, Toshiaki Petrović, Zoran Lj |
| author_GND | (DE-588)172850495 |
| author_facet | Makabe, Toshiaki Petrović, Zoran Lj |
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| author_sort | Makabe, Toshiaki |
| author_variant | t m tm z l p zl zlp |
| building | Verbundindex |
| bvnumber | BV044370780 |
| classification_rvk | UR 8000 ZN 4100 |
| ctrlnum | (OCoLC)1022087231 (DE-599)BSZ479638470 |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| edition | Second edition, first issued in paperback |
| format | Book |
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| id | DE-604.BV044370780 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T07:51:03Z |
| institution | BVB |
| isbn | 9781138034150 9781482222050 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-029773187 |
| oclc_num | 1022087231 |
| open_access_boolean | |
| owner | DE-703 |
| owner_facet | DE-703 |
| physical | xxxv, 376 Seiten Diagramme |
| publishDate | 2016 |
| publishDateSearch | 2016 |
| publishDateSort | 2016 |
| publisher | CRC Press |
| record_format | marc |
| spelling | Makabe, Toshiaki Verfasser (DE-588)172850495 aut Plasma electronics applications in microelectronic device fabrication Toshiaki Makabe, Zoran Lj. Petrovic Second edition, first issued in paperback Boca Raton ; London ; New York CRC Press 2016 xxxv, 376 Seiten Diagramme txt rdacontent n rdamedia nc rdacarrier Plasmatechnik (DE-588)4140353-8 gnd rswk-swf Plasmaphysik (DE-588)4046259-6 gnd rswk-swf Mikroelektronik (DE-588)4039207-7 gnd rswk-swf Plasmatechnik (DE-588)4140353-8 s Mikroelektronik (DE-588)4039207-7 s Plasmaphysik (DE-588)4046259-6 s 1\p DE-604 Petrović, Zoran Lj. Verfasser aut Digitalisierung UB Bayreuth - ADAM Catalogue Enrichment application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=029773187&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis Digitalisierung UB Bayreuth - ADAM Catalogue Enrichment application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=029773187&sequence=000002&line_number=0002&func_code=DB_RECORDS&service_type=MEDIA Klappentext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Makabe, Toshiaki Petrović, Zoran Lj Plasma electronics applications in microelectronic device fabrication Plasmatechnik (DE-588)4140353-8 gnd Plasmaphysik (DE-588)4046259-6 gnd Mikroelektronik (DE-588)4039207-7 gnd |
| subject_GND | (DE-588)4140353-8 (DE-588)4046259-6 (DE-588)4039207-7 |
| title | Plasma electronics applications in microelectronic device fabrication |
| title_auth | Plasma electronics applications in microelectronic device fabrication |
| title_exact_search | Plasma electronics applications in microelectronic device fabrication |
| title_full | Plasma electronics applications in microelectronic device fabrication Toshiaki Makabe, Zoran Lj. Petrovic |
| title_fullStr | Plasma electronics applications in microelectronic device fabrication Toshiaki Makabe, Zoran Lj. Petrovic |
| title_full_unstemmed | Plasma electronics applications in microelectronic device fabrication Toshiaki Makabe, Zoran Lj. Petrovic |
| title_short | Plasma electronics |
| title_sort | plasma electronics applications in microelectronic device fabrication |
| title_sub | applications in microelectronic device fabrication |
| topic | Plasmatechnik (DE-588)4140353-8 gnd Plasmaphysik (DE-588)4046259-6 gnd Mikroelektronik (DE-588)4039207-7 gnd |
| topic_facet | Plasmatechnik Plasmaphysik Mikroelektronik |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=029773187&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=029773187&sequence=000002&line_number=0002&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT makabetoshiaki plasmaelectronicsapplicationsinmicroelectronicdevicefabrication AT petroviczoranlj plasmaelectronicsapplicationsinmicroelectronicdevicefabrication |