Handbook of GaN semiconductor materials and devices:
Saved in:
| Other Authors: | |
|---|---|
| Format: | Book |
| Language: | English |
| Published: |
Boca Raton ; London ; New York
CRC Press, Taylor & Francis Group
[2018]
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| Series: | Series in optics and optoelectronics
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| Subjects: | |
| Online Access: | Inhaltsverzeichnis Klappentext |
| Physical Description: | xxii, 686 Seiten Illustrationen, Diagramme |
| ISBN: | 9781498747134 |
Staff View
MARC
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Record in the Search Index
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|---|---|
| adam_text | Contents
A
Series Preface............................................................vii
Foreword...................................................................ix
Preface....................................................................xi
Editors....................................................................xv
Contributors.............................................................xvii
SECTION I Fundamentals
1 Ill-Nitride Materials and Characterization.............................3
Bo Sheriy Ning Tang, XinQiang Wang, ZhiZhong Chen, Fujun Xu, XueLin Yang,
Tongjun Yu, JieJun Wu, ZhiXin Qin, WeiYing Wang, YuXia Feng, and WeiKun Ge
2 Microstructure and Polarization Properties of Ill-Nitride Semiconductors.53
Fernando A. Ponce
3 Optical Properties of Ill-Nitride Semiconductors......................87
Plamen P. Paskov and Bo Monemar
4 Electronic and Transport Properties of Ill-Nitride Semiconductors....117
Yuh-Renn Wu
SECTION II Growth and Processing
5 Growth Technology for GaN and AIN Bulk Substrates and Templates..........143
Michael Slomski, Lianghong Liu, John F. Muth, and Tania Paskova
6 Ill-Nitride Metalorganic Vapor-Phase Epitaxy.........................169
Daniel D. Koleske
7 Molecular Beam Epitaxial Growth of Ill-Nitride Nanowire
Heterostructures and Emerging Device Applications....................243
Shizhao Fan, Songrui Zhao, FaqrulA. Chowdhury, Renjie Wang, and Zetian Mi
8 Advanced Optoelectronic Device Processing............................285
Fengyi Jiang
vi Contents
SECTION III Power Electronics
9 Principles and Properties of Nitride-Based Electronic Devices........305
An-Jye Tzou, Chun-Hsun Lee, Shin-Yi Ho, Hao-Chung (Henry) Kuo, and Jian-Jang Huang
10 Power Conversion and the Role of GaN..................................329
,Srabanti Cfiowdhury
11 Recent Progress in CaN-on-Si HEMT.....................................347
Kevin /. Chen and Shu Yang
12 Reliability in Ill-Nitride Devices....................................367
Davide Bisi, Isabella Rossetto, Matteo Meneghini, Caudenzio Meneghesso,
and Enrico Zanoni
SECTION IV Light Emitters
13 Internal Quantum Efficiency for III-Nitride-Based Blue
Light-Emitting Diodes.................................................433
Zi-Hui Zhang, Yonghui Zhang, Hilmi Volkan Detain and Xiao Wei Sun
14 White Eight-Emitting Diode: Fundamentals, Current Status, and
Future Trends.........................................................463
Bingfoig fan, Yi Zhuo, and Gang Wang
15 Current Status and Trends for Green Light-Emitting Diodes.............489
Junxi Wang, Zhe Liu, and Ning Zhang
16 Ultraviolet Light-Emitting Diodes: Challenges and Countermeasures....511
Jun Hyuk Park, Jong Won Lee, Dong YeongKim, and Jong Kyu Kim
17 InGaN/GaN Quantum Dot Visible Lasers..................................527
V tom as Ernst, Guan-Lin Su, John Dallesasse, and Pal lab Bhaitacharya
18 GaN-Based Surface-Emitting Lasers.....................................557
Kuo-Bin Hong, Shen-Che Huang, Yu-Hsun Chou, and Tien-Chang Lu
SECTION V Emerging Applications
19 111 — V Nitride-Based Photodetection..................................597
Chien-Chung Lin, Lung-Hsing Hsu, Yu-Ling Tsai, Hao-Chung (Henry) Kuo,
Wei-Chih Lai, and Jinn-Kong Sheu
20 Intersubband Optoelectronics Using Ill-Nitride Semiconductors.........615
Caroline B. Lim, Akhil Ajay, Jonas Lähnemann, David A. Browne, and Eva Monroy
21 Lighting Communications...............................................645
Yu-Chieh Chi, Dan-Hua Hsieh, Hao-Chung (Henry) Kuo, Sujie Nakamura,
Steve Denbaars, and Gong-Ru Lin
22 Ill-Nitride Semiconductor Single Photon Sources.......................661
Pci- CMcng Ku, Chu- / Isiang Teng, and Hu i Deng
Index.....................................................................671
Electrical Engineering / Optics
SERIES IN OPTICS AND OPTOELECTRONICS
SERIES EDITORS: ROBERT G W BROWN AND E ROY PIKE
Handbook of
GaN Semiconductor
Materials and Devices
This book addresses material growth, device fabrication, device application,
and commercialization of energy-efficient white light-emitting diodes (LEDs),
laser diodes, and power electronics devices. It begins with an overview on
the basics of semiconductor materials, physics, growth, and characterization
techniques, followed by a detailed discussion of the advantages, drawbacks,
design issues, processing, applications, and key challenges for state-of-
the-art GaN-based devices. It includes state-of-the-art material synthesis
techniques with an overview on growth technologies for emerging bulk or
free-standing GaN and AIN substrates and their applications in electronics,
detection, sensing, optoelectronics, and photonics.
Wengang (Wayne) Bi is distinguished chair professor and associate dean
in the College of Information and Electrical Engineering, chief scientist in the
State Key Laboratory of Reliability and Intelligence of Electrical Equipment.
Hebei University of Technology. Tianjin. China.
Hao-Ctiung (Henry) Kuo is Distinguished Professor and Associate Director
of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan.
China.
Pei-Chertg Ku is an associate professor in the Department of Electrical
Engineering Computer Science at the University of Michigan, Ann Arbor, USA.
Bo Shen is the Cheung Kong Professor at Peking University in China.
CRC Press
Taylor Francis Croup
an inform« business
www.crcpress.com
6000 Broken Sound Parkway, NW
Suite 300, Boca Raton, a 334*7
711 Third Avenue
New York, NY 10017
2 Park Square, MRton Park
Abingdon, Oxon OX14 4RN, UK
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| any_adam_object | 1 |
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| author_facet | Bi, Wengang |
| building | Verbundindex |
| bvnumber | BV044312776 |
| classification_rvk | UP 3100 ZN 3460 |
| ctrlnum | (OCoLC)1006740782 (DE-599)BVBBV044312776 |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| id | DE-604.BV044312776 |
| illustrated | Illustrated |
| indexdate | 2024-07-10T07:49:28Z |
| institution | BVB |
| isbn | 9781498747134 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-029716396 |
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| owner_facet | DE-703 DE-83 |
| physical | xxii, 686 Seiten Illustrationen, Diagramme |
| publishDate | 2018 |
| publishDateSearch | 2018 |
| publishDateSort | 2018 |
| publisher | CRC Press, Taylor & Francis Group |
| record_format | marc |
| series2 | Series in optics and optoelectronics |
| spelling | Handbook of GaN semiconductor materials and devices edited by Wengang (Wayne) Bi [und 3 andere] Boca Raton ; London ; New York CRC Press, Taylor & Francis Group [2018] xxii, 686 Seiten Illustrationen, Diagramme txt rdacontent n rdamedia nc rdacarrier Series in optics and optoelectronics Galliumnitrid (DE-588)4375592-6 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf Hochleistungswerkstoff (DE-588)4312250-4 gnd rswk-swf Galliumnitrid (DE-588)4375592-6 s Halbleiter (DE-588)4022993-2 s DE-604 Hochleistungswerkstoff (DE-588)4312250-4 s Bi, Wengang (DE-588)1151162825 edt Digitalisierung UB Bayreuth - ADAM Catalogue Enrichment application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=029716396&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis Digitalisierung UB Bayreuth - ADAM Catalogue Enrichment application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=029716396&sequence=000002&line_number=0002&func_code=DB_RECORDS&service_type=MEDIA Klappentext |
| spellingShingle | Handbook of GaN semiconductor materials and devices Galliumnitrid (DE-588)4375592-6 gnd Halbleiter (DE-588)4022993-2 gnd Hochleistungswerkstoff (DE-588)4312250-4 gnd |
| subject_GND | (DE-588)4375592-6 (DE-588)4022993-2 (DE-588)4312250-4 |
| title | Handbook of GaN semiconductor materials and devices |
| title_auth | Handbook of GaN semiconductor materials and devices |
| title_exact_search | Handbook of GaN semiconductor materials and devices |
| title_full | Handbook of GaN semiconductor materials and devices edited by Wengang (Wayne) Bi [und 3 andere] |
| title_fullStr | Handbook of GaN semiconductor materials and devices edited by Wengang (Wayne) Bi [und 3 andere] |
| title_full_unstemmed | Handbook of GaN semiconductor materials and devices edited by Wengang (Wayne) Bi [und 3 andere] |
| title_short | Handbook of GaN semiconductor materials and devices |
| title_sort | handbook of gan semiconductor materials and devices |
| topic | Galliumnitrid (DE-588)4375592-6 gnd Halbleiter (DE-588)4022993-2 gnd Hochleistungswerkstoff (DE-588)4312250-4 gnd |
| topic_facet | Galliumnitrid Halbleiter Hochleistungswerkstoff |
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