Technology evolution for silicon nano-electronics: selected, peer reviewed papers from the proceedings of the International Symposium on Technology Evolution for Silicon Nano-Electronics 2010, June 3-5, 2010, Tokyo Institute of Technology, Tokyo, Japan
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| Format: | Electronic eBook |
| Language: | English |
| Published: |
Stafa-Zurich, Switzerland
Trans Tech Publications
c2011
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| Subjects: | |
| Item Description: | Includes bibliographical references and indexes |
| Physical Description: | xi, 234 p. |
| ISBN: | 3037850515 9783037850510 9783038134947 |
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| 110 | 2 | |a International Symposium on Technology Evolution for Silicon Nano-Electronics <2010, Tokyo Institute of Technology> |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Technology evolution for silicon nano-electronics |b selected, peer reviewed papers from the proceedings of the International Symposium on Technology Evolution for Silicon Nano-Electronics 2010, June 3-5, 2010, Tokyo Institute of Technology, Tokyo, Japan |c edited by Seiichi Miyazaki and Hitoshi Tabata |
| 246 | 1 | 3 | |a Proceedings of the International Symposium on Technology Evolution for Silicon Nano-Electronics |
| 246 | 1 | 3 | |a International Symposium on Technology Evolution for Silicon Nano-Electronics |
| 264 | 1 | |a Stafa-Zurich, Switzerland |b Trans Tech Publications |c c2011 | |
| 300 | |a xi, 234 p. | ||
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| 337 | |b c |2 rdamedia | ||
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| 500 | |a Includes bibliographical references and indexes | ||
| 505 | 0 | |a High Mobility Ge-Based CMOS Device Technologies -- SiGe-Mixing-Triggered Rapid-Melting-Growth of High-Mobility Ge-On-Insulator -- Impact of Self-Heating Effect on the Electrical Characteristics of Nanoscale Devices -- Functional Device Applications of Nanosilicon -- Tunable Single-Electron Turnstile Using Discrete Dopants in Nanoscale SOI-FETs -- KFM Observation of Electron Charging and Discharging in Phosphorus-Doped SOI Channel -- Photoluminescence Characteristics of Ultra-Thin Silicon-on-Insulator at Low Temperatures -- Investigation about I-V Characteristics in a New Electronic Structure Model of the Ohmic Contact for Future Nano-Scale Ohmic Contact -- Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure -- Electronic Structure and Spin-Injection of Co-Based Heusler Alloy/ Semiconductor Junctions -- First-Principles Calculations of the Dielectric Constant for the GeO2 Films -- | |
| 650 | 4 | |a Nanoelectronics |v Congresses | |
| 650 | 4 | |a Nanostructured materials |v Congresses | |
| 650 | 4 | |a Metal oxide semiconductors |v Congresses | |
| 655 | 7 | |0 (DE-588)1071861417 |a Konferenzschrift |2 gnd-content | |
| 700 | 1 | |a Miyazaki, Seiichi |e Sonstige |4 oth | |
| 700 | 1 | |a Tabata, Hitoshi |e Sonstige |4 oth | |
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Record in the Search Index
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| author_corporate | International Symposium on Technology Evolution for Silicon Nano-Electronics <2010, Tokyo Institute of Technology> |
| author_corporate_role | aut |
| author_facet | International Symposium on Technology Evolution for Silicon Nano-Electronics <2010, Tokyo Institute of Technology> |
| author_sort | International Symposium on Technology Evolution for Silicon Nano-Electronics <2010, Tokyo Institute of Technology> |
| building | Verbundindex |
| bvnumber | BV044180196 |
| collection | ZDB-30-PAD |
| contents | High Mobility Ge-Based CMOS Device Technologies -- SiGe-Mixing-Triggered Rapid-Melting-Growth of High-Mobility Ge-On-Insulator -- Impact of Self-Heating Effect on the Electrical Characteristics of Nanoscale Devices -- Functional Device Applications of Nanosilicon -- Tunable Single-Electron Turnstile Using Discrete Dopants in Nanoscale SOI-FETs -- KFM Observation of Electron Charging and Discharging in Phosphorus-Doped SOI Channel -- Photoluminescence Characteristics of Ultra-Thin Silicon-on-Insulator at Low Temperatures -- Investigation about I-V Characteristics in a New Electronic Structure Model of the Ohmic Contact for Future Nano-Scale Ohmic Contact -- Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure -- Electronic Structure and Spin-Injection of Co-Based Heusler Alloy/ Semiconductor Junctions -- First-Principles Calculations of the Dielectric Constant for the GeO2 Films -- |
| ctrlnum | (ZDB-30-PAD)EBC1872562 (ZDB-89-EBL)EBL1872562 (OCoLC)815479314 (DE-599)BVBBV044180196 |
| dewey-full | 621.3815 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815 |
| dewey-search | 621.3815 |
| dewey-sort | 3621.3815 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Electronic eBook |
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| illustrated | Not Illustrated |
| indexdate | 2024-07-10T07:45:58Z |
| institution | BVB |
| isbn | 3037850515 9783037850510 9783038134947 |
| language | English |
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| spelling | International Symposium on Technology Evolution for Silicon Nano-Electronics <2010, Tokyo Institute of Technology> Verfasser aut Technology evolution for silicon nano-electronics selected, peer reviewed papers from the proceedings of the International Symposium on Technology Evolution for Silicon Nano-Electronics 2010, June 3-5, 2010, Tokyo Institute of Technology, Tokyo, Japan edited by Seiichi Miyazaki and Hitoshi Tabata Proceedings of the International Symposium on Technology Evolution for Silicon Nano-Electronics International Symposium on Technology Evolution for Silicon Nano-Electronics Stafa-Zurich, Switzerland Trans Tech Publications c2011 xi, 234 p. txt rdacontent c rdamedia cr rdacarrier Includes bibliographical references and indexes High Mobility Ge-Based CMOS Device Technologies -- SiGe-Mixing-Triggered Rapid-Melting-Growth of High-Mobility Ge-On-Insulator -- Impact of Self-Heating Effect on the Electrical Characteristics of Nanoscale Devices -- Functional Device Applications of Nanosilicon -- Tunable Single-Electron Turnstile Using Discrete Dopants in Nanoscale SOI-FETs -- KFM Observation of Electron Charging and Discharging in Phosphorus-Doped SOI Channel -- Photoluminescence Characteristics of Ultra-Thin Silicon-on-Insulator at Low Temperatures -- Investigation about I-V Characteristics in a New Electronic Structure Model of the Ohmic Contact for Future Nano-Scale Ohmic Contact -- Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure -- Electronic Structure and Spin-Injection of Co-Based Heusler Alloy/ Semiconductor Junctions -- First-Principles Calculations of the Dielectric Constant for the GeO2 Films -- Nanoelectronics Congresses Nanostructured materials Congresses Metal oxide semiconductors Congresses (DE-588)1071861417 Konferenzschrift gnd-content Miyazaki, Seiichi Sonstige oth Tabata, Hitoshi Sonstige oth |
| spellingShingle | Technology evolution for silicon nano-electronics selected, peer reviewed papers from the proceedings of the International Symposium on Technology Evolution for Silicon Nano-Electronics 2010, June 3-5, 2010, Tokyo Institute of Technology, Tokyo, Japan High Mobility Ge-Based CMOS Device Technologies -- SiGe-Mixing-Triggered Rapid-Melting-Growth of High-Mobility Ge-On-Insulator -- Impact of Self-Heating Effect on the Electrical Characteristics of Nanoscale Devices -- Functional Device Applications of Nanosilicon -- Tunable Single-Electron Turnstile Using Discrete Dopants in Nanoscale SOI-FETs -- KFM Observation of Electron Charging and Discharging in Phosphorus-Doped SOI Channel -- Photoluminescence Characteristics of Ultra-Thin Silicon-on-Insulator at Low Temperatures -- Investigation about I-V Characteristics in a New Electronic Structure Model of the Ohmic Contact for Future Nano-Scale Ohmic Contact -- Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure -- Electronic Structure and Spin-Injection of Co-Based Heusler Alloy/ Semiconductor Junctions -- First-Principles Calculations of the Dielectric Constant for the GeO2 Films -- Nanoelectronics Congresses Nanostructured materials Congresses Metal oxide semiconductors Congresses |
| subject_GND | (DE-588)1071861417 |
| title | Technology evolution for silicon nano-electronics selected, peer reviewed papers from the proceedings of the International Symposium on Technology Evolution for Silicon Nano-Electronics 2010, June 3-5, 2010, Tokyo Institute of Technology, Tokyo, Japan |
| title_alt | Proceedings of the International Symposium on Technology Evolution for Silicon Nano-Electronics International Symposium on Technology Evolution for Silicon Nano-Electronics |
| title_auth | Technology evolution for silicon nano-electronics selected, peer reviewed papers from the proceedings of the International Symposium on Technology Evolution for Silicon Nano-Electronics 2010, June 3-5, 2010, Tokyo Institute of Technology, Tokyo, Japan |
| title_exact_search | Technology evolution for silicon nano-electronics selected, peer reviewed papers from the proceedings of the International Symposium on Technology Evolution for Silicon Nano-Electronics 2010, June 3-5, 2010, Tokyo Institute of Technology, Tokyo, Japan |
| title_full | Technology evolution for silicon nano-electronics selected, peer reviewed papers from the proceedings of the International Symposium on Technology Evolution for Silicon Nano-Electronics 2010, June 3-5, 2010, Tokyo Institute of Technology, Tokyo, Japan edited by Seiichi Miyazaki and Hitoshi Tabata |
| title_fullStr | Technology evolution for silicon nano-electronics selected, peer reviewed papers from the proceedings of the International Symposium on Technology Evolution for Silicon Nano-Electronics 2010, June 3-5, 2010, Tokyo Institute of Technology, Tokyo, Japan edited by Seiichi Miyazaki and Hitoshi Tabata |
| title_full_unstemmed | Technology evolution for silicon nano-electronics selected, peer reviewed papers from the proceedings of the International Symposium on Technology Evolution for Silicon Nano-Electronics 2010, June 3-5, 2010, Tokyo Institute of Technology, Tokyo, Japan edited by Seiichi Miyazaki and Hitoshi Tabata |
| title_short | Technology evolution for silicon nano-electronics |
| title_sort | technology evolution for silicon nano electronics selected peer reviewed papers from the proceedings of the international symposium on technology evolution for silicon nano electronics 2010 june 3 5 2010 tokyo institute of technology tokyo japan |
| title_sub | selected, peer reviewed papers from the proceedings of the International Symposium on Technology Evolution for Silicon Nano-Electronics 2010, June 3-5, 2010, Tokyo Institute of Technology, Tokyo, Japan |
| topic | Nanoelectronics Congresses Nanostructured materials Congresses Metal oxide semiconductors Congresses |
| topic_facet | Nanoelectronics Congresses Nanostructured materials Congresses Metal oxide semiconductors Congresses Konferenzschrift |
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