The physics and modeling of MOSFETS: surface-potential model HiSIM
Saved in:
| Main Author: | |
|---|---|
| Format: | Electronic eBook |
| Language: | English |
| Published: |
Singapore
World Scientific
c2008
|
| Series: | International series on advances in solid state electronics and technology
|
| Subjects: | |
| Item Description: | Includes bibliographical references and index |
| Physical Description: | xxii, 352 p. |
| ISBN: | 9789812568649 9812568646 9789812812056 |
Staff View
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| 245 | 1 | 0 | |a The physics and modeling of MOSFETS |b surface-potential model HiSIM |c Mitiko Miura-Mattausch, Hans Jurgen Mattausch, Tatsuya Ezaki |
| 264 | 1 | |a Singapore |b World Scientific |c c2008 | |
| 300 | |a xxii, 352 p. | ||
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Record in the Search Index
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| author_facet | Miura-Mattausch, Mitiko 1949- |
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| dewey-full | 621.3815/284015118 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815/284015118 |
| dewey-search | 621.3815/284015118 |
| dewey-sort | 3621.3815 9284015118 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
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| id | DE-604.BV044093694 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T07:43:29Z |
| institution | BVB |
| isbn | 9789812568649 9812568646 9789812812056 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-029500539 |
| oclc_num | 551762896 |
| open_access_boolean | |
| physical | xxii, 352 p. |
| psigel | ZDB-30-PAD |
| publishDate | 2008 |
| publishDateSearch | 2008 |
| publishDateSort | 2008 |
| publisher | World Scientific |
| record_format | marc |
| series2 | International series on advances in solid state electronics and technology |
| spelling | Miura-Mattausch, Mitiko 1949- Verfasser aut The physics and modeling of MOSFETS surface-potential model HiSIM Mitiko Miura-Mattausch, Hans Jurgen Mattausch, Tatsuya Ezaki Singapore World Scientific c2008 xxii, 352 p. txt rdacontent c rdamedia cr rdacarrier International series on advances in solid state electronics and technology Includes bibliographical references and index Mathematisches Modell Metal oxide semiconductor field-effect transistors Metal oxide semiconductor field-effect transistors Mathematical models MOS-FET (DE-588)4207266-9 gnd rswk-swf Simulation (DE-588)4055072-2 gnd rswk-swf MOS-FET (DE-588)4207266-9 s Simulation (DE-588)4055072-2 s 1\p DE-604 Mattausch, Hans Jurgen Sonstige oth Ezaki, Tatsuya Sonstige oth 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Miura-Mattausch, Mitiko 1949- The physics and modeling of MOSFETS surface-potential model HiSIM Mathematisches Modell Metal oxide semiconductor field-effect transistors Metal oxide semiconductor field-effect transistors Mathematical models MOS-FET (DE-588)4207266-9 gnd Simulation (DE-588)4055072-2 gnd |
| subject_GND | (DE-588)4207266-9 (DE-588)4055072-2 |
| title | The physics and modeling of MOSFETS surface-potential model HiSIM |
| title_auth | The physics and modeling of MOSFETS surface-potential model HiSIM |
| title_exact_search | The physics and modeling of MOSFETS surface-potential model HiSIM |
| title_full | The physics and modeling of MOSFETS surface-potential model HiSIM Mitiko Miura-Mattausch, Hans Jurgen Mattausch, Tatsuya Ezaki |
| title_fullStr | The physics and modeling of MOSFETS surface-potential model HiSIM Mitiko Miura-Mattausch, Hans Jurgen Mattausch, Tatsuya Ezaki |
| title_full_unstemmed | The physics and modeling of MOSFETS surface-potential model HiSIM Mitiko Miura-Mattausch, Hans Jurgen Mattausch, Tatsuya Ezaki |
| title_short | The physics and modeling of MOSFETS |
| title_sort | the physics and modeling of mosfets surface potential model hisim |
| title_sub | surface-potential model HiSIM |
| topic | Mathematisches Modell Metal oxide semiconductor field-effect transistors Metal oxide semiconductor field-effect transistors Mathematical models MOS-FET (DE-588)4207266-9 gnd Simulation (DE-588)4055072-2 gnd |
| topic_facet | Mathematisches Modell Metal oxide semiconductor field-effect transistors Metal oxide semiconductor field-effect transistors Mathematical models MOS-FET Simulation |
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