MOCVD growth of GaN-based high electron mobility transistor structures:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Linköping, Sweden
Linköping University
2015
|
| Schriftenreihe: | Linköping Studies in Science and Technology Dissertations
Number 1662 |
| Schlagworte: | |
| Beschreibung: | Description based on online resource; title from PDF title page (ebrary, viewed May 5, 2015) |
| Beschreibung: | 1 online resource (81 pages) illustrations (some color) |
| ISBN: | 9789175190730 |
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Datensatz im Suchindex
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| author | Chen, Jr-Tai |
| author_facet | Chen, Jr-Tai |
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| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
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| id | DE-604.BV044055596 |
| illustrated | Illustrated |
| indexdate | 2024-07-10T07:42:20Z |
| institution | BVB |
| isbn | 9789175190730 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-029462441 |
| oclc_num | 909902902 |
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| physical | 1 online resource (81 pages) illustrations (some color) |
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| publishDate | 2015 |
| publishDateSearch | 2015 |
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| publisher | Linköping University |
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| series2 | Linköping Studies in Science and Technology Dissertations |
| spelling | Chen, Jr-Tai aut MOCVD growth of GaN-based high electron mobility transistor structures Jr-Tai Chen Linköping, Sweden Linköping University 2015 © 2015 1 online resource (81 pages) illustrations (some color) txt rdacontent c rdamedia cr rdacarrier Linköping Studies in Science and Technology Dissertations Number 1662 Description based on online resource; title from PDF title page (ebrary, viewed May 5, 2015) Semiconductors Materials Epitaxy Semiconductor Materials DivisionXXbDepartment of Physics, Chemistry, and BiologyXXbLinköping UniversityXXeissuing body Sonstige oth |
| spellingShingle | Chen, Jr-Tai MOCVD growth of GaN-based high electron mobility transistor structures Semiconductors Materials Epitaxy |
| title | MOCVD growth of GaN-based high electron mobility transistor structures |
| title_auth | MOCVD growth of GaN-based high electron mobility transistor structures |
| title_exact_search | MOCVD growth of GaN-based high electron mobility transistor structures |
| title_full | MOCVD growth of GaN-based high electron mobility transistor structures Jr-Tai Chen |
| title_fullStr | MOCVD growth of GaN-based high electron mobility transistor structures Jr-Tai Chen |
| title_full_unstemmed | MOCVD growth of GaN-based high electron mobility transistor structures Jr-Tai Chen |
| title_short | MOCVD growth of GaN-based high electron mobility transistor structures |
| title_sort | mocvd growth of gan based high electron mobility transistor structures |
| topic | Semiconductors Materials Epitaxy |
| topic_facet | Semiconductors Materials Epitaxy |
| work_keys_str_mv | AT chenjrtai mocvdgrowthofganbasedhighelectronmobilitytransistorstructures AT semiconductormaterialsdivisionxxbdepartmentofphysicschemistryandbiologyxxblinkopinguniversityxxeissuingbody mocvdgrowthofganbasedhighelectronmobilitytransistorstructures |