Fundamentals of ultra-thin-body MOSFETs and FinFETs:
Understand the theory, design and applications of the two principal candidates for the next mainstream semiconductor-industry device with this concise and clear guide to FD/UTB transistors. • Describes FD/SOI MOSFETs and 3-D FinFETs in detail • Covers short-channel effects, quantum-mechanical effect...
Gespeichert in:
1. Verfasser: | |
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Format: | Elektronisch E-Book |
Sprache: | English |
Veröffentlicht: |
Cambridge
Cambridge University Press
2013
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Schlagworte: | |
Online-Zugang: | BSB01 FHN01 URL des Erstveröffentlichers |
Zusammenfassung: | Understand the theory, design and applications of the two principal candidates for the next mainstream semiconductor-industry device with this concise and clear guide to FD/UTB transistors. • Describes FD/SOI MOSFETs and 3-D FinFETs in detail • Covers short-channel effects, quantum-mechanical effects, applications of UTB devices to floating-body DRAM and conventional SRAM • Provides design criteria for nanoscale FinFET and nanoscale thin- and thick-BOX planar FD/SOI MOSFET to help reduce technology development time • Projects potential nanoscale UTB CMOS performances • Contains end-of-chapter exercises. For professional engineers in the CMOS IC field who need to know about optimal non-classical device design and integration, this is a must-have resource |
Beschreibung: | Title from publisher's bibliographic system (viewed on 05 Oct 2015) |
Beschreibung: | 1 online resource (xvi, 210 pages) |
ISBN: | 9781139343466 |
DOI: | 10.1017/CBO9781139343466 |
Internformat
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246 | 1 | 3 | |a Fundamentals of ultra-thin-body MOSFETs & FinFETs |
264 | 1 | |a Cambridge |b Cambridge University Press |c 2013 | |
300 | |a 1 online resource (xvi, 210 pages) | ||
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500 | |a Title from publisher's bibliographic system (viewed on 05 Oct 2015) | ||
505 | 8 | |a Machine generated contents note: Preface; List of physical constants; List of symbols; 1. Introduction; 2. Unique features of UTB MOSFETs; 3. Planar fully depleted SOI MOSFETs; 4. FinFETs; Appendix: UFDG; References; Index | |
520 | |a Understand the theory, design and applications of the two principal candidates for the next mainstream semiconductor-industry device with this concise and clear guide to FD/UTB transistors. • Describes FD/SOI MOSFETs and 3-D FinFETs in detail • Covers short-channel effects, quantum-mechanical effects, applications of UTB devices to floating-body DRAM and conventional SRAM • Provides design criteria for nanoscale FinFET and nanoscale thin- and thick-BOX planar FD/SOI MOSFET to help reduce technology development time • Projects potential nanoscale UTB CMOS performances • Contains end-of-chapter exercises. For professional engineers in the CMOS IC field who need to know about optimal non-classical device design and integration, this is a must-have resource | ||
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912 | |a ZDB-20-CBO | ||
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Datensatz im Suchindex
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any_adam_object | |
author | Fossum, Jerry G. 1943- |
author_facet | Fossum, Jerry G. 1943- |
author_role | aut |
author_sort | Fossum, Jerry G. 1943- |
author_variant | j g f jg jgf |
building | Verbundindex |
bvnumber | BV043943601 |
classification_rvk | ZN 4870 |
collection | ZDB-20-CBO |
contents | Machine generated contents note: Preface; List of physical constants; List of symbols; 1. Introduction; 2. Unique features of UTB MOSFETs; 3. Planar fully depleted SOI MOSFETs; 4. FinFETs; Appendix: UFDG; References; Index |
ctrlnum | (ZDB-20-CBO)CR9781139343466 (OCoLC)907963785 (DE-599)BVBBV043943601 |
dewey-full | 621.3815/284 |
dewey-hundreds | 600 - Technology (Applied sciences) |
dewey-ones | 621 - Applied physics |
dewey-raw | 621.3815/284 |
dewey-search | 621.3815/284 |
dewey-sort | 3621.3815 3284 |
dewey-tens | 620 - Engineering and allied operations |
discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
doi_str_mv | 10.1017/CBO9781139343466 |
format | Electronic eBook |
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institution | BVB |
isbn | 9781139343466 |
language | English |
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spelling | Fossum, Jerry G. 1943- Verfasser aut Fundamentals of ultra-thin-body MOSFETs and FinFETs Jerry G. Fossum, University of Florida, Gainesville, Vishal P. Trivedi, Freescale Semiconductor, Arizona Fundamentals of ultra-thin-body MOSFETs & FinFETs Cambridge Cambridge University Press 2013 1 online resource (xvi, 210 pages) txt rdacontent c rdamedia cr rdacarrier Title from publisher's bibliographic system (viewed on 05 Oct 2015) Machine generated contents note: Preface; List of physical constants; List of symbols; 1. Introduction; 2. Unique features of UTB MOSFETs; 3. Planar fully depleted SOI MOSFETs; 4. FinFETs; Appendix: UFDG; References; Index Understand the theory, design and applications of the two principal candidates for the next mainstream semiconductor-industry device with this concise and clear guide to FD/UTB transistors. • Describes FD/SOI MOSFETs and 3-D FinFETs in detail • Covers short-channel effects, quantum-mechanical effects, applications of UTB devices to floating-body DRAM and conventional SRAM • Provides design criteria for nanoscale FinFET and nanoscale thin- and thick-BOX planar FD/SOI MOSFET to help reduce technology development time • Projects potential nanoscale UTB CMOS performances • Contains end-of-chapter exercises. For professional engineers in the CMOS IC field who need to know about optimal non-classical device design and integration, this is a must-have resource Metal oxide semiconductor field-effect transistors Integrated circuits / Very large scale integration CMOS (DE-588)4010319-5 gnd rswk-swf MOS-FET (DE-588)4207266-9 gnd rswk-swf Feldeffekttransistor (DE-588)4131472-4 gnd rswk-swf Feldeffekttransistor (DE-588)4131472-4 s MOS-FET (DE-588)4207266-9 s CMOS (DE-588)4010319-5 s 1\p DE-604 Erscheint auch als Druckausgabe 978-1-107-03041-1 https://doi.org/10.1017/CBO9781139343466 Verlag URL des Erstveröffentlichers Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
spellingShingle | Fossum, Jerry G. 1943- Fundamentals of ultra-thin-body MOSFETs and FinFETs Machine generated contents note: Preface; List of physical constants; List of symbols; 1. Introduction; 2. Unique features of UTB MOSFETs; 3. Planar fully depleted SOI MOSFETs; 4. FinFETs; Appendix: UFDG; References; Index Metal oxide semiconductor field-effect transistors Integrated circuits / Very large scale integration CMOS (DE-588)4010319-5 gnd MOS-FET (DE-588)4207266-9 gnd Feldeffekttransistor (DE-588)4131472-4 gnd |
subject_GND | (DE-588)4010319-5 (DE-588)4207266-9 (DE-588)4131472-4 |
title | Fundamentals of ultra-thin-body MOSFETs and FinFETs |
title_alt | Fundamentals of ultra-thin-body MOSFETs & FinFETs |
title_auth | Fundamentals of ultra-thin-body MOSFETs and FinFETs |
title_exact_search | Fundamentals of ultra-thin-body MOSFETs and FinFETs |
title_full | Fundamentals of ultra-thin-body MOSFETs and FinFETs Jerry G. Fossum, University of Florida, Gainesville, Vishal P. Trivedi, Freescale Semiconductor, Arizona |
title_fullStr | Fundamentals of ultra-thin-body MOSFETs and FinFETs Jerry G. Fossum, University of Florida, Gainesville, Vishal P. Trivedi, Freescale Semiconductor, Arizona |
title_full_unstemmed | Fundamentals of ultra-thin-body MOSFETs and FinFETs Jerry G. Fossum, University of Florida, Gainesville, Vishal P. Trivedi, Freescale Semiconductor, Arizona |
title_short | Fundamentals of ultra-thin-body MOSFETs and FinFETs |
title_sort | fundamentals of ultra thin body mosfets and finfets |
topic | Metal oxide semiconductor field-effect transistors Integrated circuits / Very large scale integration CMOS (DE-588)4010319-5 gnd MOS-FET (DE-588)4207266-9 gnd Feldeffekttransistor (DE-588)4131472-4 gnd |
topic_facet | Metal oxide semiconductor field-effect transistors Integrated circuits / Very large scale integration CMOS MOS-FET Feldeffekttransistor |
url | https://doi.org/10.1017/CBO9781139343466 |
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