Nonlinear transistor model parameter extraction techniques:
Achieve accurate and reliable parameter extraction using this complete survey of state-of-the-art techniques and methods. A team of experts from industry and academia provides you with insights into a range of key topics, including parasitics, intrinsic extraction, statistics, extraction uncertainty...
Gespeichert in:
Weitere Verfasser: | , , |
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Format: | Elektronisch E-Book |
Sprache: | English |
Veröffentlicht: |
Cambridge
Cambridge University Press
2012
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Schriftenreihe: | The Cambridge RF and microwave engineering series
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Schlagworte: | |
Online-Zugang: | BSB01 FHN01 Volltext |
Zusammenfassung: | Achieve accurate and reliable parameter extraction using this complete survey of state-of-the-art techniques and methods. A team of experts from industry and academia provides you with insights into a range of key topics, including parasitics, intrinsic extraction, statistics, extraction uncertainty, nonlinear and DC parameters, self-heating and traps, noise, and package effects. Learn how similar approaches to parameter extraction can be applied to different technologies. A variety of real-world industrial examples and measurement results show you how the theories and methods presented can be used in practice. Whether you use transistor models for evaluation of device processing and you need to understand the methods behind the models you use, or you want to develop models for existing and new device types, this is your complete guide to parameter extraction |
Beschreibung: | Title from publisher's bibliographic system (viewed on 05 Oct 2015) |
Beschreibung: | 1 online resource (xiv, 352 pages) |
ISBN: | 9781139014960 |
DOI: | 10.1017/CBO9781139014960 |
Internformat
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520 | |a Achieve accurate and reliable parameter extraction using this complete survey of state-of-the-art techniques and methods. A team of experts from industry and academia provides you with insights into a range of key topics, including parasitics, intrinsic extraction, statistics, extraction uncertainty, nonlinear and DC parameters, self-heating and traps, noise, and package effects. Learn how similar approaches to parameter extraction can be applied to different technologies. A variety of real-world industrial examples and measurement results show you how the theories and methods presented can be used in practice. Whether you use transistor models for evaluation of device processing and you need to understand the methods behind the models you use, or you want to develop models for existing and new device types, this is your complete guide to parameter extraction | ||
650 | 4 | |a Mathematisches Modell | |
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Datensatz im Suchindex
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any_adam_object | |
author2 | Rudolph, Matthias 1969- Fager, Christian Root, David E. |
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author_GND | (DE-588)123731771 |
author_facet | Rudolph, Matthias 1969- Fager, Christian Root, David E. |
building | Verbundindex |
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dewey-ones | 621 - Applied physics |
dewey-raw | 621.3815/28 |
dewey-search | 621.3815/28 |
dewey-sort | 3621.3815 228 |
dewey-tens | 620 - Engineering and allied operations |
discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
doi_str_mv | 10.1017/CBO9781139014960 |
format | Electronic eBook |
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id | DE-604.BV043940506 |
illustrated | Not Illustrated |
indexdate | 2024-07-10T07:39:13Z |
institution | BVB |
isbn | 9781139014960 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-029349476 |
oclc_num | 982086490 |
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physical | 1 online resource (xiv, 352 pages) |
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publishDate | 2012 |
publishDateSearch | 2012 |
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publisher | Cambridge University Press |
record_format | marc |
series2 | The Cambridge RF and microwave engineering series |
spelling | Nonlinear transistor model parameter extraction techniques edited by Matthias Rudolph, Christian Fager, David E. Root Cambridge Cambridge University Press 2012 1 online resource (xiv, 352 pages) txt rdacontent c rdamedia cr rdacarrier The Cambridge RF and microwave engineering series Title from publisher's bibliographic system (viewed on 05 Oct 2015) Achieve accurate and reliable parameter extraction using this complete survey of state-of-the-art techniques and methods. A team of experts from industry and academia provides you with insights into a range of key topics, including parasitics, intrinsic extraction, statistics, extraction uncertainty, nonlinear and DC parameters, self-heating and traps, noise, and package effects. Learn how similar approaches to parameter extraction can be applied to different technologies. A variety of real-world industrial examples and measurement results show you how the theories and methods presented can be used in practice. Whether you use transistor models for evaluation of device processing and you need to understand the methods behind the models you use, or you want to develop models for existing and new device types, this is your complete guide to parameter extraction Mathematisches Modell Transistors / Mathematical models Electronic circuit design Rudolph, Matthias 1969- (DE-588)123731771 edt Fager, Christian edt Root, David E. edt Erscheint auch als Druckausgabe 978-0-521-76210-6 https://doi.org/10.1017/CBO9781139014960 Verlag URL des Erstveröffentlichers Volltext |
spellingShingle | Nonlinear transistor model parameter extraction techniques Mathematisches Modell Transistors / Mathematical models Electronic circuit design |
title | Nonlinear transistor model parameter extraction techniques |
title_auth | Nonlinear transistor model parameter extraction techniques |
title_exact_search | Nonlinear transistor model parameter extraction techniques |
title_full | Nonlinear transistor model parameter extraction techniques edited by Matthias Rudolph, Christian Fager, David E. Root |
title_fullStr | Nonlinear transistor model parameter extraction techniques edited by Matthias Rudolph, Christian Fager, David E. Root |
title_full_unstemmed | Nonlinear transistor model parameter extraction techniques edited by Matthias Rudolph, Christian Fager, David E. Root |
title_short | Nonlinear transistor model parameter extraction techniques |
title_sort | nonlinear transistor model parameter extraction techniques |
topic | Mathematisches Modell Transistors / Mathematical models Electronic circuit design |
topic_facet | Mathematisches Modell Transistors / Mathematical models Electronic circuit design |
url | https://doi.org/10.1017/CBO9781139014960 |
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