Oxide electronics and functional properties of transition metal oxides:
Gespeichert in:
Weitere Verfasser: | |
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Format: | Elektronisch E-Book |
Sprache: | English |
Veröffentlicht: |
Hauppauge, New York
Nova Science Publishers, Inc.
[2014]
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Schriftenreihe: | Chemistry research and applications series
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Schlagworte: | |
Online-Zugang: | FAW01 FAW02 |
Beschreibung: | Includes index Print version record |
Beschreibung: | 1 online resource |
ISBN: | 9781633215344 1633215342 9781633214996 1633214990 |
Internformat
MARC
LEADER | 00000nmm a2200000zc 4500 | ||
---|---|---|---|
001 | BV043781927 | ||
003 | DE-604 | ||
005 | 00000000000000.0 | ||
007 | cr|uuu---uuuuu | ||
008 | 160920s2014 |||| o||u| ||||||eng d | ||
020 | |a 9781633215344 |9 978-1-63321-534-4 | ||
020 | |a 1633215342 |9 1-63321-534-2 | ||
020 | |a 9781633214996 |9 978-1-63321-499-6 | ||
020 | |a 1633214990 |9 1-63321-499-0 | ||
035 | |a (ZDB-4-EBA)ocn887240745 | ||
035 | |a (ZDB-4-ENC)ocn887240745 | ||
035 | |a (OCoLC)887240745 | ||
035 | |a (DE-599)BVBBV043781927 | ||
040 | |a DE-604 |b ger |e rda | ||
041 | 0 | |a eng | |
049 | |a DE-1046 |a DE-1047 | ||
082 | 0 | |a 621.381 |2 23 | |
245 | 1 | 0 | |a Oxide electronics and functional properties of transition metal oxides |c editor, Alexander Pergament (Petrozavodsk State University, Russia) |
264 | 1 | |a Hauppauge, New York |b Nova Science Publishers, Inc. |c [2014] | |
300 | |a 1 online resource | ||
336 | |b txt |2 rdacontent | ||
337 | |b c |2 rdamedia | ||
338 | |b cr |2 rdacarrier | ||
490 | 0 | |a Chemistry research and applications series | |
500 | |a Includes index | ||
500 | |a Print version record | ||
505 | 8 | |a MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) for a long time have been the workhorse of the modern electronics industry. For the purpose of a permanent integration enhancement, the size of a MOSFET has been decreasing exponentially for decades in compliance with Moore's Law, but nowadays, owing to the intrinsic restrictions, the further scaling of MOSFET devices either encounters fundamental (e.g. quantum-mechanical) limits or demands for more and more sophisticated and expensive engineering solutions. Alternative approaches and device concepts are being currently designed both | |
650 | 4 | |a Oxides / Electric properties | |
650 | 4 | |a Transition metal oxides | |
650 | 7 | |a TECHNOLOGY & ENGINEERING / Mechanical |2 bisacsh | |
650 | 7 | |a Oxides / Electric properties |2 fast | |
650 | 7 | |a Transition metal oxides |2 fast | |
650 | 4 | |a Transition metal oxides |a Oxides |x Electric properties | |
700 | 1 | |a Pergament, Alexander |4 edt | |
776 | 0 | 8 | |i Erscheint auch als |n Druck-Ausgabe |a Oxide electronics and functional properties of transition metal oxides |
912 | |a ZDB-4-EBA |a ZDB-4-ENC | ||
999 | |a oai:aleph.bib-bvb.de:BVB01-029192987 | ||
966 | e | |u http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=821893 |l FAW01 |p ZDB-4-EBA |q FAW_PDA_EBA |x Aggregator |3 Volltext | |
966 | e | |u http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=821893 |l FAW02 |p ZDB-4-EBA |q FAW_PDA_EBA |x Aggregator |3 Volltext |
Datensatz im Suchindex
_version_ | 1804176612807147520 |
---|---|
any_adam_object | |
author2 | Pergament, Alexander |
author2_role | edt |
author2_variant | a p ap |
author_facet | Pergament, Alexander |
building | Verbundindex |
bvnumber | BV043781927 |
collection | ZDB-4-EBA ZDB-4-ENC |
contents | MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) for a long time have been the workhorse of the modern electronics industry. For the purpose of a permanent integration enhancement, the size of a MOSFET has been decreasing exponentially for decades in compliance with Moore's Law, but nowadays, owing to the intrinsic restrictions, the further scaling of MOSFET devices either encounters fundamental (e.g. quantum-mechanical) limits or demands for more and more sophisticated and expensive engineering solutions. Alternative approaches and device concepts are being currently designed both |
ctrlnum | (ZDB-4-EBA)ocn887240745 (ZDB-4-ENC)ocn887240745 (OCoLC)887240745 (DE-599)BVBBV043781927 |
dewey-full | 621.381 |
dewey-hundreds | 600 - Technology (Applied sciences) |
dewey-ones | 621 - Applied physics |
dewey-raw | 621.381 |
dewey-search | 621.381 |
dewey-sort | 3621.381 |
dewey-tens | 620 - Engineering and allied operations |
discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
format | Electronic eBook |
fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>02594nmm a2200493zc 4500</leader><controlfield tag="001">BV043781927</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">160920s2014 |||| o||u| ||||||eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9781633215344</subfield><subfield code="9">978-1-63321-534-4</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">1633215342</subfield><subfield code="9">1-63321-534-2</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9781633214996</subfield><subfield code="9">978-1-63321-499-6</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">1633214990</subfield><subfield code="9">1-63321-499-0</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ZDB-4-EBA)ocn887240745</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ZDB-4-ENC)ocn887240745</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)887240745</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV043781927</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rda</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-1046</subfield><subfield code="a">DE-1047</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.381</subfield><subfield code="2">23</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Oxide electronics and functional properties of transition metal oxides</subfield><subfield code="c">editor, Alexander Pergament (Petrozavodsk State University, Russia)</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Hauppauge, New York</subfield><subfield code="b">Nova Science Publishers, Inc.</subfield><subfield code="c">[2014]</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 online resource</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">Chemistry research and applications series</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Includes index</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Print version record</subfield></datafield><datafield tag="505" ind1="8" ind2=" "><subfield code="a">MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) for a long time have been the workhorse of the modern electronics industry. For the purpose of a permanent integration enhancement, the size of a MOSFET has been decreasing exponentially for decades in compliance with Moore's Law, but nowadays, owing to the intrinsic restrictions, the further scaling of MOSFET devices either encounters fundamental (e.g. quantum-mechanical) limits or demands for more and more sophisticated and expensive engineering solutions. Alternative approaches and device concepts are being currently designed both</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Oxides / Electric properties</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Transition metal oxides</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">TECHNOLOGY & ENGINEERING / Mechanical</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Oxides / Electric properties</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Transition metal oxides</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Transition metal oxides</subfield><subfield code="a">Oxides</subfield><subfield code="x">Electric properties</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Pergament, Alexander</subfield><subfield code="4">edt</subfield></datafield><datafield tag="776" ind1="0" ind2="8"><subfield code="i">Erscheint auch als</subfield><subfield code="n">Druck-Ausgabe</subfield><subfield code="a">Oxide electronics and functional properties of transition metal oxides</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-4-EBA</subfield><subfield code="a">ZDB-4-ENC</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-029192987</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=821893</subfield><subfield code="l">FAW01</subfield><subfield code="p">ZDB-4-EBA</subfield><subfield code="q">FAW_PDA_EBA</subfield><subfield code="x">Aggregator</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=821893</subfield><subfield code="l">FAW02</subfield><subfield code="p">ZDB-4-EBA</subfield><subfield code="q">FAW_PDA_EBA</subfield><subfield code="x">Aggregator</subfield><subfield code="3">Volltext</subfield></datafield></record></collection> |
id | DE-604.BV043781927 |
illustrated | Not Illustrated |
indexdate | 2024-07-10T07:34:57Z |
institution | BVB |
isbn | 9781633215344 1633215342 9781633214996 1633214990 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-029192987 |
oclc_num | 887240745 |
open_access_boolean | |
owner | DE-1046 DE-1047 |
owner_facet | DE-1046 DE-1047 |
physical | 1 online resource |
psigel | ZDB-4-EBA ZDB-4-ENC ZDB-4-EBA FAW_PDA_EBA |
publishDate | 2014 |
publishDateSearch | 2014 |
publishDateSort | 2014 |
publisher | Nova Science Publishers, Inc. |
record_format | marc |
series2 | Chemistry research and applications series |
spelling | Oxide electronics and functional properties of transition metal oxides editor, Alexander Pergament (Petrozavodsk State University, Russia) Hauppauge, New York Nova Science Publishers, Inc. [2014] 1 online resource txt rdacontent c rdamedia cr rdacarrier Chemistry research and applications series Includes index Print version record MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) for a long time have been the workhorse of the modern electronics industry. For the purpose of a permanent integration enhancement, the size of a MOSFET has been decreasing exponentially for decades in compliance with Moore's Law, but nowadays, owing to the intrinsic restrictions, the further scaling of MOSFET devices either encounters fundamental (e.g. quantum-mechanical) limits or demands for more and more sophisticated and expensive engineering solutions. Alternative approaches and device concepts are being currently designed both Oxides / Electric properties Transition metal oxides TECHNOLOGY & ENGINEERING / Mechanical bisacsh Oxides / Electric properties fast Transition metal oxides fast Transition metal oxides Oxides Electric properties Pergament, Alexander edt Erscheint auch als Druck-Ausgabe Oxide electronics and functional properties of transition metal oxides |
spellingShingle | Oxide electronics and functional properties of transition metal oxides MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) for a long time have been the workhorse of the modern electronics industry. For the purpose of a permanent integration enhancement, the size of a MOSFET has been decreasing exponentially for decades in compliance with Moore's Law, but nowadays, owing to the intrinsic restrictions, the further scaling of MOSFET devices either encounters fundamental (e.g. quantum-mechanical) limits or demands for more and more sophisticated and expensive engineering solutions. Alternative approaches and device concepts are being currently designed both Oxides / Electric properties Transition metal oxides TECHNOLOGY & ENGINEERING / Mechanical bisacsh Oxides / Electric properties fast Transition metal oxides fast Transition metal oxides Oxides Electric properties |
title | Oxide electronics and functional properties of transition metal oxides |
title_auth | Oxide electronics and functional properties of transition metal oxides |
title_exact_search | Oxide electronics and functional properties of transition metal oxides |
title_full | Oxide electronics and functional properties of transition metal oxides editor, Alexander Pergament (Petrozavodsk State University, Russia) |
title_fullStr | Oxide electronics and functional properties of transition metal oxides editor, Alexander Pergament (Petrozavodsk State University, Russia) |
title_full_unstemmed | Oxide electronics and functional properties of transition metal oxides editor, Alexander Pergament (Petrozavodsk State University, Russia) |
title_short | Oxide electronics and functional properties of transition metal oxides |
title_sort | oxide electronics and functional properties of transition metal oxides |
topic | Oxides / Electric properties Transition metal oxides TECHNOLOGY & ENGINEERING / Mechanical bisacsh Oxides / Electric properties fast Transition metal oxides fast Transition metal oxides Oxides Electric properties |
topic_facet | Oxides / Electric properties Transition metal oxides TECHNOLOGY & ENGINEERING / Mechanical Transition metal oxides Oxides Electric properties |
work_keys_str_mv | AT pergamentalexander oxideelectronicsandfunctionalpropertiesoftransitionmetaloxides |