Silicon carbide and related materials 2010: selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), 29 August-2 September 2010, Sundvolden Conference Center, held in Oslo, Norway = ECSCRM 2010
Saved in:
| Corporate Author: | |
|---|---|
| Format: | Electronic eBook |
| Language: | English |
| Published: |
Durnten-Zurich, Switzerland
Trans Tech Publications
2011
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| Series: | Materials science forum
v. 679-680 |
| Subjects: | |
| Online Access: | FAW01 FAW02 |
| Item Description: | Print version record |
| Physical Description: | 1 online resource (862 pages) illustrations |
| ISBN: | 9783038134626 3038134627 9783037850794 |
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| 245 | 1 | 0 | |a Silicon carbide and related materials 2010 |b selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), 29 August-2 September 2010, Sundvolden Conference Center, held in Oslo, Norway = ECSCRM 2010 |c edited by Edouard V. Monakhov, Tamás Hornos and Bengt G. Svensson |
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| 505 | 8 | |a Silicon Carbide and Related Materials 2010; Committees and Preface; Table of Contents; Chapter 1: SIC Growth; 1.1 Bulk Growth; Enlargement Growth of Large 4H-SiC Bulk Single Crystal; Reducing Stacking Faults in Highly Doped N-Type 4H-SiC Crystal; On Application of Sublimation Epitaxy to Growth of Bulk 3C-SiC Crystals; Experimental Verification of a Novel System for the Growth of SiC Single Crystals; Quality Investigation of 3C-SiC Crystals Grown by CF-PVT Technique; Polytype Stability of 4H-SiC Seed Crystal on Solution Growth | |
| 505 | 8 | |a Defect Evaluation of SiC Crystal Grown by Solution Method: The Study by Synchrotron X-Ray Topography and Etching MethodEffect of Low Frequency Magnetic Field on SiC Solution Growth; Crystal Growth of 4H-SiC on 6H-SiC by Traveling Solvent Method; The Effect of Process Parameters on 4H-SiC Single Crystal Grown by a PVT Method; Effect of the Seed Polarity for High Quality 4H-SiC Crystal Grown on 6H-SiC Seed by PVT Method; 1.2 Epitaxial Growth; Evolution of Extended Defects during Epitaxial Growths: A Monte Carlo Study; 4H-SiC Homoepitaxial Growth on Substrates with Different Off-Cut Directions | |
| 505 | 8 | |a Atomistic Simulation of SiC Growth at the SiC(0001)/Si1-XCx Interface by the Monte Carlo MethodPolarity Control of CVD Grown 3C-SiC on Si(111); Epitaxial Growth on 4H-SiC on-Axis, 0.5°, 1.25°, 2°, 4°, 8° Off-Axis Substrates -- Defects Analysis and Reduction; Investigation of the Growth of 3C-SiC on Si by Vapor-Liquid-Solid (VLS) Transport; Geometrical Control of 3C and 6H-SiC Nucleation on Low Off-Axis Substrates; Epitaxial Growth of 3C-SiC on Si Substrates by Atmospheric Hot Wall CVD Using Hexamethyledisilane[(CH3)6Si2]; Investigation of 3C-SiC Lateral Growth on 4H-SiC Mesas | |
| 505 | 8 | |a High Growth Rate with Reduced Surface Roughness during On-Axis Homoepitaxial Growth of 4H-SiCGrowth of 4H- and 3C-SiC Epitaxial Layers on 4H-SiC Step-Free Mesas; 4H-SiC Epitaxy with Very Smooth Surface and Low Basal Plane Dislocation on 4 Degree Off-Axis Wafer; Generation of Void-Like Structures during Hot-Hydrogen Etching of Si Substrates for 3C-SiC Epitaxy; Chaper 2: SIC Characterization; 2.1 Fundamental and Structural Properties; Advanced Stress Analysis by Micro-Structures Realization on High Quality Hetero-Epitaxial 3C-SiC for MEMS Application | |
| 505 | 8 | |a This volume contains the proceedings of the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, on August 29th - September 2nd. The editions of ECSCRM have developed over the years and, today, ECSCRM is the leading European conference in the field of 'SiC and related materials and their applications'. This volume is divided into five chapters ranging from 'SiC growth' to 'Biosystems' and thus represents a comprehensive coverage of the field. Review from Book News Inc.: Presentations at this sitting of the biennial | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING / Mechanical |2 bisacsh | |
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| 650 | 7 | |a Silicon carbide / Electric properties |2 fast | |
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| 700 | 1 | |a Svensson, Bengt G. |e Sonstige |4 oth | |
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| author_facet | European Conference on Silicon Carbide and Related Materials < 2010, Oslo, Norway> |
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| contents | Silicon Carbide and Related Materials 2010; Committees and Preface; Table of Contents; Chapter 1: SIC Growth; 1.1 Bulk Growth; Enlargement Growth of Large 4H-SiC Bulk Single Crystal; Reducing Stacking Faults in Highly Doped N-Type 4H-SiC Crystal; On Application of Sublimation Epitaxy to Growth of Bulk 3C-SiC Crystals; Experimental Verification of a Novel System for the Growth of SiC Single Crystals; Quality Investigation of 3C-SiC Crystals Grown by CF-PVT Technique; Polytype Stability of 4H-SiC Seed Crystal on Solution Growth Defect Evaluation of SiC Crystal Grown by Solution Method: The Study by Synchrotron X-Ray Topography and Etching MethodEffect of Low Frequency Magnetic Field on SiC Solution Growth; Crystal Growth of 4H-SiC on 6H-SiC by Traveling Solvent Method; The Effect of Process Parameters on 4H-SiC Single Crystal Grown by a PVT Method; Effect of the Seed Polarity for High Quality 4H-SiC Crystal Grown on 6H-SiC Seed by PVT Method; 1.2 Epitaxial Growth; Evolution of Extended Defects during Epitaxial Growths: A Monte Carlo Study; 4H-SiC Homoepitaxial Growth on Substrates with Different Off-Cut Directions Atomistic Simulation of SiC Growth at the SiC(0001)/Si1-XCx Interface by the Monte Carlo MethodPolarity Control of CVD Grown 3C-SiC on Si(111); Epitaxial Growth on 4H-SiC on-Axis, 0.5°, 1.25°, 2°, 4°, 8° Off-Axis Substrates -- Defects Analysis and Reduction; Investigation of the Growth of 3C-SiC on Si by Vapor-Liquid-Solid (VLS) Transport; Geometrical Control of 3C and 6H-SiC Nucleation on Low Off-Axis Substrates; Epitaxial Growth of 3C-SiC on Si Substrates by Atmospheric Hot Wall CVD Using Hexamethyledisilane[(CH3)6Si2]; Investigation of 3C-SiC Lateral Growth on 4H-SiC Mesas High Growth Rate with Reduced Surface Roughness during On-Axis Homoepitaxial Growth of 4H-SiCGrowth of 4H- and 3C-SiC Epitaxial Layers on 4H-SiC Step-Free Mesas; 4H-SiC Epitaxy with Very Smooth Surface and Low Basal Plane Dislocation on 4 Degree Off-Axis Wafer; Generation of Void-Like Structures during Hot-Hydrogen Etching of Si Substrates for 3C-SiC Epitaxy; Chaper 2: SIC Characterization; 2.1 Fundamental and Structural Properties; Advanced Stress Analysis by Micro-Structures Realization on High Quality Hetero-Epitaxial 3C-SiC for MEMS Application This volume contains the proceedings of the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, on August 29th - September 2nd. The editions of ECSCRM have developed over the years and, today, ECSCRM is the leading European conference in the field of 'SiC and related materials and their applications'. This volume is divided into five chapters ranging from 'SiC growth' to 'Biosystems' and thus represents a comprehensive coverage of the field. Review from Book News Inc.: Presentations at this sitting of the biennial |
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| dewey-hundreds | 600 - Technology (Applied sciences) |
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| dewey-search | 621.38152 |
| dewey-sort | 3621.38152 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Electronic eBook |
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| record_format | marc |
| series2 | Materials science forum |
| spelling | European Conference on Silicon Carbide and Related Materials < 2010, Oslo, Norway> Verfasser aut Silicon carbide and related materials 2010 selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), 29 August-2 September 2010, Sundvolden Conference Center, held in Oslo, Norway = ECSCRM 2010 edited by Edouard V. Monakhov, Tamás Hornos and Bengt G. Svensson ECSCRM 2010 Durnten-Zurich, Switzerland Trans Tech Publications 2011 1 online resource (862 pages) illustrations txt rdacontent c rdamedia cr rdacarrier Materials science forum v. 679-680 Print version record Silicon Carbide and Related Materials 2010; Committees and Preface; Table of Contents; Chapter 1: SIC Growth; 1.1 Bulk Growth; Enlargement Growth of Large 4H-SiC Bulk Single Crystal; Reducing Stacking Faults in Highly Doped N-Type 4H-SiC Crystal; On Application of Sublimation Epitaxy to Growth of Bulk 3C-SiC Crystals; Experimental Verification of a Novel System for the Growth of SiC Single Crystals; Quality Investigation of 3C-SiC Crystals Grown by CF-PVT Technique; Polytype Stability of 4H-SiC Seed Crystal on Solution Growth Defect Evaluation of SiC Crystal Grown by Solution Method: The Study by Synchrotron X-Ray Topography and Etching MethodEffect of Low Frequency Magnetic Field on SiC Solution Growth; Crystal Growth of 4H-SiC on 6H-SiC by Traveling Solvent Method; The Effect of Process Parameters on 4H-SiC Single Crystal Grown by a PVT Method; Effect of the Seed Polarity for High Quality 4H-SiC Crystal Grown on 6H-SiC Seed by PVT Method; 1.2 Epitaxial Growth; Evolution of Extended Defects during Epitaxial Growths: A Monte Carlo Study; 4H-SiC Homoepitaxial Growth on Substrates with Different Off-Cut Directions Atomistic Simulation of SiC Growth at the SiC(0001)/Si1-XCx Interface by the Monte Carlo MethodPolarity Control of CVD Grown 3C-SiC on Si(111); Epitaxial Growth on 4H-SiC on-Axis, 0.5°, 1.25°, 2°, 4°, 8° Off-Axis Substrates -- Defects Analysis and Reduction; Investigation of the Growth of 3C-SiC on Si by Vapor-Liquid-Solid (VLS) Transport; Geometrical Control of 3C and 6H-SiC Nucleation on Low Off-Axis Substrates; Epitaxial Growth of 3C-SiC on Si Substrates by Atmospheric Hot Wall CVD Using Hexamethyledisilane[(CH3)6Si2]; Investigation of 3C-SiC Lateral Growth on 4H-SiC Mesas High Growth Rate with Reduced Surface Roughness during On-Axis Homoepitaxial Growth of 4H-SiCGrowth of 4H- and 3C-SiC Epitaxial Layers on 4H-SiC Step-Free Mesas; 4H-SiC Epitaxy with Very Smooth Surface and Low Basal Plane Dislocation on 4 Degree Off-Axis Wafer; Generation of Void-Like Structures during Hot-Hydrogen Etching of Si Substrates for 3C-SiC Epitaxy; Chaper 2: SIC Characterization; 2.1 Fundamental and Structural Properties; Advanced Stress Analysis by Micro-Structures Realization on High Quality Hetero-Epitaxial 3C-SiC for MEMS Application This volume contains the proceedings of the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, on August 29th - September 2nd. The editions of ECSCRM have developed over the years and, today, ECSCRM is the leading European conference in the field of 'SiC and related materials and their applications'. This volume is divided into five chapters ranging from 'SiC growth' to 'Biosystems' and thus represents a comprehensive coverage of the field. Review from Book News Inc.: Presentations at this sitting of the biennial TECHNOLOGY & ENGINEERING / Mechanical bisacsh Silicon carbide fast Silicon carbide / Electric properties fast Silicon-carbide thin films fast Silicon carbide Congresses Silicon carbide Electric properties Congresses Silicon-carbide thin films Congresses Siliciumcarbid (DE-588)4055009-6 gnd rswk-swf Oslo (DE-588)4043968-9 gnd rswk-swf (DE-588)1071861417 Konferenzschrift gnd-content Siliciumcarbid (DE-588)4055009-6 s Oslo (DE-588)4043968-9 g 1\p DE-604 Monakhov, Edouard V. Sonstige oth Hornos, Tamás Sonstige oth Svensson, Bengt G. Sonstige oth Erscheint auch als Druck-Ausgabe Silicon carbide and related materials 2010 : selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), 29 August-2 September 2010, Sundvolden Conference Center, held in Oslo, Norway 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Silicon carbide and related materials 2010 selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), 29 August-2 September 2010, Sundvolden Conference Center, held in Oslo, Norway = ECSCRM 2010 Silicon Carbide and Related Materials 2010; Committees and Preface; Table of Contents; Chapter 1: SIC Growth; 1.1 Bulk Growth; Enlargement Growth of Large 4H-SiC Bulk Single Crystal; Reducing Stacking Faults in Highly Doped N-Type 4H-SiC Crystal; On Application of Sublimation Epitaxy to Growth of Bulk 3C-SiC Crystals; Experimental Verification of a Novel System for the Growth of SiC Single Crystals; Quality Investigation of 3C-SiC Crystals Grown by CF-PVT Technique; Polytype Stability of 4H-SiC Seed Crystal on Solution Growth Defect Evaluation of SiC Crystal Grown by Solution Method: The Study by Synchrotron X-Ray Topography and Etching MethodEffect of Low Frequency Magnetic Field on SiC Solution Growth; Crystal Growth of 4H-SiC on 6H-SiC by Traveling Solvent Method; The Effect of Process Parameters on 4H-SiC Single Crystal Grown by a PVT Method; Effect of the Seed Polarity for High Quality 4H-SiC Crystal Grown on 6H-SiC Seed by PVT Method; 1.2 Epitaxial Growth; Evolution of Extended Defects during Epitaxial Growths: A Monte Carlo Study; 4H-SiC Homoepitaxial Growth on Substrates with Different Off-Cut Directions Atomistic Simulation of SiC Growth at the SiC(0001)/Si1-XCx Interface by the Monte Carlo MethodPolarity Control of CVD Grown 3C-SiC on Si(111); Epitaxial Growth on 4H-SiC on-Axis, 0.5°, 1.25°, 2°, 4°, 8° Off-Axis Substrates -- Defects Analysis and Reduction; Investigation of the Growth of 3C-SiC on Si by Vapor-Liquid-Solid (VLS) Transport; Geometrical Control of 3C and 6H-SiC Nucleation on Low Off-Axis Substrates; Epitaxial Growth of 3C-SiC on Si Substrates by Atmospheric Hot Wall CVD Using Hexamethyledisilane[(CH3)6Si2]; Investigation of 3C-SiC Lateral Growth on 4H-SiC Mesas High Growth Rate with Reduced Surface Roughness during On-Axis Homoepitaxial Growth of 4H-SiCGrowth of 4H- and 3C-SiC Epitaxial Layers on 4H-SiC Step-Free Mesas; 4H-SiC Epitaxy with Very Smooth Surface and Low Basal Plane Dislocation on 4 Degree Off-Axis Wafer; Generation of Void-Like Structures during Hot-Hydrogen Etching of Si Substrates for 3C-SiC Epitaxy; Chaper 2: SIC Characterization; 2.1 Fundamental and Structural Properties; Advanced Stress Analysis by Micro-Structures Realization on High Quality Hetero-Epitaxial 3C-SiC for MEMS Application This volume contains the proceedings of the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, on August 29th - September 2nd. The editions of ECSCRM have developed over the years and, today, ECSCRM is the leading European conference in the field of 'SiC and related materials and their applications'. This volume is divided into five chapters ranging from 'SiC growth' to 'Biosystems' and thus represents a comprehensive coverage of the field. Review from Book News Inc.: Presentations at this sitting of the biennial TECHNOLOGY & ENGINEERING / Mechanical bisacsh Silicon carbide fast Silicon carbide / Electric properties fast Silicon-carbide thin films fast Silicon carbide Congresses Silicon carbide Electric properties Congresses Silicon-carbide thin films Congresses Siliciumcarbid (DE-588)4055009-6 gnd |
| subject_GND | (DE-588)4055009-6 (DE-588)4043968-9 (DE-588)1071861417 |
| title | Silicon carbide and related materials 2010 selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), 29 August-2 September 2010, Sundvolden Conference Center, held in Oslo, Norway = ECSCRM 2010 |
| title_alt | ECSCRM 2010 |
| title_auth | Silicon carbide and related materials 2010 selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), 29 August-2 September 2010, Sundvolden Conference Center, held in Oslo, Norway = ECSCRM 2010 |
| title_exact_search | Silicon carbide and related materials 2010 selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), 29 August-2 September 2010, Sundvolden Conference Center, held in Oslo, Norway = ECSCRM 2010 |
| title_full | Silicon carbide and related materials 2010 selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), 29 August-2 September 2010, Sundvolden Conference Center, held in Oslo, Norway = ECSCRM 2010 edited by Edouard V. Monakhov, Tamás Hornos and Bengt G. Svensson |
| title_fullStr | Silicon carbide and related materials 2010 selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), 29 August-2 September 2010, Sundvolden Conference Center, held in Oslo, Norway = ECSCRM 2010 edited by Edouard V. Monakhov, Tamás Hornos and Bengt G. Svensson |
| title_full_unstemmed | Silicon carbide and related materials 2010 selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), 29 August-2 September 2010, Sundvolden Conference Center, held in Oslo, Norway = ECSCRM 2010 edited by Edouard V. Monakhov, Tamás Hornos and Bengt G. Svensson |
| title_short | Silicon carbide and related materials 2010 |
| title_sort | silicon carbide and related materials 2010 selected peer reviewed papers from the 8th european conference on silicon carbide and related materials ecscrm 2010 29 august 2 september 2010 sundvolden conference center held in oslo norway ecscrm 2010 |
| title_sub | selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), 29 August-2 September 2010, Sundvolden Conference Center, held in Oslo, Norway = ECSCRM 2010 |
| topic | TECHNOLOGY & ENGINEERING / Mechanical bisacsh Silicon carbide fast Silicon carbide / Electric properties fast Silicon-carbide thin films fast Silicon carbide Congresses Silicon carbide Electric properties Congresses Silicon-carbide thin films Congresses Siliciumcarbid (DE-588)4055009-6 gnd |
| topic_facet | TECHNOLOGY & ENGINEERING / Mechanical Silicon carbide Silicon carbide / Electric properties Silicon-carbide thin films Silicon carbide Congresses Silicon carbide Electric properties Congresses Silicon-carbide thin films Congresses Siliciumcarbid Oslo Konferenzschrift |
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