Silicon carbide and related materials 2012: selected, peer reviewed materials from the 9th European Conference on Silicon carbide and Related Materials, September 2-6, 2012, St. Petersburg, Russian Federation
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Bibliographic Details
Corporate Author: European Conference on Silicon Carbide and Related Materials < 2012, St. Petersburg, Russia> (Author)
Other Authors: Lebedev, Alexander A. (Editor), Davydov, Sergey Uu (Editor), Ivanov, Pavel A. (Editor), Levinshtein, Mikhail E. (Editor)
Format: Electronic eBook
Language:English
Published: Durnten-Zurich, Switzerland Trans Tech Publications [2013]
Series:Materials science forum v. 740-742
Subjects:
Online Access:FAW01
FAW02
Item Description:Includes bibliographical references and indexes
The volume on Silicon Carbide and Related Materials is divided into 10 chapters ranging from ""Bulk growth"" to ""Device and application"". The reports demonstrate the technical and scientific advances in the related areas: 150 mm 4H-SiC wafers are now commercially available, a significant improvement of the carrier lifetime (up to 35 ms) for n-type SiC epi-layers has been achieved, SiC diodes have a large market share in server and telecom power applications requiring the maximum efficiency, and a variety of 1- cm 2, 15 kV class bipolar devices have been demonstrated, including PN Diodes, IG.
Physical Description:xxiii, 1149 pages .
ISBN:3038260053
9783038260059
9783037856246
3037856246

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