Ferroelectrics: new research
Gespeichert in:
| Format: | Elektronisch E-Book |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
New York
Nova Science Publishers, Inc
©2012
|
| Schriftenreihe: | Electrical engineering developments series
|
| Schlagworte: | |
| Online-Zugang: | FAW01 FAW02 |
| Beschreibung: | Includes bibliographical references and index ""FERROELECTRICS NEW RESEARCH ""; ""FERROELECTRICS NEW RESEARCH ""; ""CONTENTS ""; ""PREFACE ""; ""APPLICATION OF FERROELECTRICS: METAL FERROELECTRIC INSULATOR SEMICONDUCTOR FIELD EFFECT TRANSISTOR ""; ""ABSTRACT ""; ""1. INTRODUCTION OF FERROELECTRIC FIELD EFFECT TRANSISTOR ""; ""Retention ""; ""Leakage Current ""; ""Depolarization Field""; ""Disturbance ""; ""2. STUDY FOR FEFET ""; ""2.1. Improvement of Ferroelectric Materials for MFIS FeFET ""; ""2.1.1. Photochemical Metal-Organic Deposition (PMOD) ""; ""2.1.1.1. Application of PMOD to the Formation of PZT Thin Films"" ""2.1.1.2. Application of PMOD to the Formation of Bi3.25La0.75Ti3O12 Thin Films """"2.1.2. Electron Beam-Induced Metal-Organic Deposition (EMOD) ""; ""2.1.2.1. Ferroelectric Properties of Sub 50-nm Direct-Patterned Pb(Zr, Ti)O3 Thin Films ""; ""2.1.3. Composition Control in the Chemical Solution Process ""; ""2.1.3.1. The Effects of Solvent on the Properties of Sol-Gel Derived PZT Thin Films ""; ""2.1.4. The Effect of Film Thickness and Annealing Temperature ""; ""2.1.4.1. The Effects of Film Thickness of PZT on the Crystallization and Ferroelectric Properties "" ""2.1.4.2. Substrate Modification for the Direct Formation of PZT Films with Perovskite Structure """"2.1.5. Element Substitution in Ferroelectric Materials ""; ""2.1.5.1. Ferroelectric Properties of La Substituted Bi4Ti3O12 Thin Films ""; ""2.1.5.2. Structural and Electrical Properties of Bi4-XNdxTi3O12 Thin Films ""; ""2.1.5.3. Development of Sol-Gel Precursor System for PZT Thin Films Containing Various La Contents ""; ""2.1.5.4. Electrical Properties of PLZT Thin Films with Various Zr/Ti Ratios "" ""2.1.5.5. Synthesis and Characterization of Ferroelectric Properties of Ce2Ti2O7 Thin Films with Ce3+ """"2.1.6. Ferroelectric Multilayer Structure""; ""2.1.6.1. Stacking Effect on the Ferroelectric Properties of PZT/PLZT Multilayer Thin Films ""; ""2.1.6.2. Electric and Ferroelectric Properties of PZT/BLT and PZT/SBT Multilayer Thin Films""; ""2.1.6.3. Formation of Multilayer Thin Films of Nd2Ti2O7 and Bi3.25La0.75Ti3O12 For Applying to Ferroelectric Field Effect Transistor ""; ""2.2.6.4. Effect of SrTiO3 Buffer Layer on the Phase Formation and Properties of BiFeO3 Thin Films "" ""2.2. Study on the Improvement of Retention Property in MFIS-FeFET """"2.3.1. Insulator Materials in MFIS for Retention Improvement of FeFET ""; ""2.2.2. Ferroelectric Materials in MFIS for Retention Improvement of FeFET ""; ""CONCLUSION ""; ""REFERENCES ""; ""RESONANT AND NON-RESONANT MICROWAVE ABSORPTION STUDIES IN MULTIFERROIC MATERIALS ""; ""ABSTRACT""; ""1. INTRODUCTION ""; ""2. EXPERIMENTAL METHODS ""; ""2.1. Resonant Microwave Absorption Measurement (EPR Technique) ""; ""2.2. Non-Resonant Microwave Absorption Measurements (MAMMAS and LFMA) ""; ""3. MULTIFERROIC MATERIALS STUDIES "" |
| Beschreibung: | xii, 326 pages |
| ISBN: | 1619422905 9781619422902 9781619422827 1619422824 |
Internformat
MARC
| LEADER | 00000nmm a2200000zc 4500 | ||
|---|---|---|---|
| 001 | BV043775255 | ||
| 003 | DE-604 | ||
| 005 | 00000000000000.0 | ||
| 007 | cr|uuu---uuuuu | ||
| 008 | 160920s2012 |||| o||u| ||||||eng d | ||
| 020 | |a 1619422905 |9 1-61942-290-5 | ||
| 020 | |a 9781619422902 |9 978-1-61942-290-2 | ||
| 020 | |a 9781619422827 |9 978-1-61942-282-7 | ||
| 020 | |a 1619422824 |9 1-61942-282-4 | ||
| 035 | |a (ZDB-4-EBA)ocn832316135 | ||
| 035 | |a (OCoLC)832316135 | ||
| 035 | |a (DE-599)BVBBV043775255 | ||
| 040 | |a DE-604 |b ger |e aacr | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-1046 |a DE-1047 | ||
| 082 | 0 | |a 537.2448 |2 23 | |
| 245 | 1 | 0 | |a Ferroelectrics |b new research |c Xui Li Huang and Su Lyn Ma, editors |
| 264 | 1 | |a New York |b Nova Science Publishers, Inc |c ©2012 | |
| 300 | |a xii, 326 pages | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b c |2 rdamedia | ||
| 338 | |b cr |2 rdacarrier | ||
| 490 | 0 | |a Electrical engineering developments series | |
| 500 | |a Includes bibliographical references and index | ||
| 500 | |a ""FERROELECTRICS NEW RESEARCH ""; ""FERROELECTRICS NEW RESEARCH ""; ""CONTENTS ""; ""PREFACE ""; ""APPLICATION OF FERROELECTRICS: METAL FERROELECTRIC INSULATOR SEMICONDUCTOR FIELD EFFECT TRANSISTOR ""; ""ABSTRACT ""; ""1. INTRODUCTION OF FERROELECTRIC FIELD EFFECT TRANSISTOR ""; ""Retention ""; ""Leakage Current ""; ""Depolarization Field""; ""Disturbance ""; ""2. STUDY FOR FEFET ""; ""2.1. Improvement of Ferroelectric Materials for MFIS FeFET ""; ""2.1.1. Photochemical Metal-Organic Deposition (PMOD) ""; ""2.1.1.1. Application of PMOD to the Formation of PZT Thin Films"" | ||
| 500 | |a ""2.1.1.2. Application of PMOD to the Formation of Bi3.25La0.75Ti3O12 Thin Films """"2.1.2. Electron Beam-Induced Metal-Organic Deposition (EMOD) ""; ""2.1.2.1. Ferroelectric Properties of Sub 50-nm Direct-Patterned Pb(Zr, Ti)O3 Thin Films ""; ""2.1.3. Composition Control in the Chemical Solution Process ""; ""2.1.3.1. The Effects of Solvent on the Properties of Sol-Gel Derived PZT Thin Films ""; ""2.1.4. The Effect of Film Thickness and Annealing Temperature ""; ""2.1.4.1. The Effects of Film Thickness of PZT on the Crystallization and Ferroelectric Properties "" | ||
| 500 | |a ""2.1.4.2. Substrate Modification for the Direct Formation of PZT Films with Perovskite Structure """"2.1.5. Element Substitution in Ferroelectric Materials ""; ""2.1.5.1. Ferroelectric Properties of La Substituted Bi4Ti3O12 Thin Films ""; ""2.1.5.2. Structural and Electrical Properties of Bi4-XNdxTi3O12 Thin Films ""; ""2.1.5.3. Development of Sol-Gel Precursor System for PZT Thin Films Containing Various La Contents ""; ""2.1.5.4. Electrical Properties of PLZT Thin Films with Various Zr/Ti Ratios "" | ||
| 500 | |a ""2.1.5.5. Synthesis and Characterization of Ferroelectric Properties of Ce2Ti2O7 Thin Films with Ce3+ """"2.1.6. Ferroelectric Multilayer Structure""; ""2.1.6.1. Stacking Effect on the Ferroelectric Properties of PZT/PLZT Multilayer Thin Films ""; ""2.1.6.2. Electric and Ferroelectric Properties of PZT/BLT and PZT/SBT Multilayer Thin Films""; ""2.1.6.3. Formation of Multilayer Thin Films of Nd2Ti2O7 and Bi3.25La0.75Ti3O12 For Applying to Ferroelectric Field Effect Transistor ""; ""2.2.6.4. Effect of SrTiO3 Buffer Layer on the Phase Formation and Properties of BiFeO3 Thin Films "" | ||
| 500 | |a ""2.2. Study on the Improvement of Retention Property in MFIS-FeFET """"2.3.1. Insulator Materials in MFIS for Retention Improvement of FeFET ""; ""2.2.2. Ferroelectric Materials in MFIS for Retention Improvement of FeFET ""; ""CONCLUSION ""; ""REFERENCES ""; ""RESONANT AND NON-RESONANT MICROWAVE ABSORPTION STUDIES IN MULTIFERROIC MATERIALS ""; ""ABSTRACT""; ""1. INTRODUCTION ""; ""2. EXPERIMENTAL METHODS ""; ""2.1. Resonant Microwave Absorption Measurement (EPR Technique) ""; ""2.2. Non-Resonant Microwave Absorption Measurements (MAMMAS and LFMA) ""; ""3. MULTIFERROIC MATERIALS STUDIES "" | ||
| 650 | 4 | |a Ferroelectric crystals | |
| 650 | 7 | |a SCIENCE / Physics / Electricity |2 bisacsh | |
| 650 | 7 | |a SCIENCE / Physics / Electromagnetism |2 bisacsh | |
| 650 | 7 | |a Ferroelectric crystals |2 fast | |
| 650 | 4 | |a Ferroelectric crystals | |
| 650 | 0 | 7 | |a Ferroelektrizität |0 (DE-588)4154126-1 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a Ferroelektrizität |0 (DE-588)4154126-1 |D s |
| 689 | 0 | |8 1\p |5 DE-604 | |
| 700 | 1 | |a Huang, Xui Li |e Sonstige |4 oth | |
| 700 | 1 | |a Ma, Su Lyn |e Sonstige |4 oth | |
| 912 | |a ZDB-4-EBA | ||
| 999 | |a oai:aleph.bib-bvb.de:BVB01-029186315 | ||
| 883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
| 966 | e | |u http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=540905 |l FAW01 |p ZDB-4-EBA |q FAW_PDA_EBA |x Aggregator |3 Volltext | |
| 966 | e | |u http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=540905 |l FAW02 |p ZDB-4-EBA |q FAW_PDA_EBA |x Aggregator |3 Volltext | |
Datensatz im Suchindex
| _version_ | 1804176600885886976 |
|---|---|
| any_adam_object | |
| building | Verbundindex |
| bvnumber | BV043775255 |
| collection | ZDB-4-EBA |
| ctrlnum | (ZDB-4-EBA)ocn832316135 (OCoLC)832316135 (DE-599)BVBBV043775255 |
| dewey-full | 537.2448 |
| dewey-hundreds | 500 - Natural sciences and mathematics |
| dewey-ones | 537 - Electricity and electronics |
| dewey-raw | 537.2448 |
| dewey-search | 537.2448 |
| dewey-sort | 3537.2448 |
| dewey-tens | 530 - Physics |
| discipline | Physik |
| format | Electronic eBook |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>04846nmm a2200553zc 4500</leader><controlfield tag="001">BV043775255</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">160920s2012 |||| o||u| ||||||eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">1619422905</subfield><subfield code="9">1-61942-290-5</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9781619422902</subfield><subfield code="9">978-1-61942-290-2</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9781619422827</subfield><subfield code="9">978-1-61942-282-7</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">1619422824</subfield><subfield code="9">1-61942-282-4</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ZDB-4-EBA)ocn832316135</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)832316135</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV043775255</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">aacr</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-1046</subfield><subfield code="a">DE-1047</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">537.2448</subfield><subfield code="2">23</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Ferroelectrics</subfield><subfield code="b">new research</subfield><subfield code="c">Xui Li Huang and Su Lyn Ma, editors</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">New York</subfield><subfield code="b">Nova Science Publishers, Inc</subfield><subfield code="c">©2012</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">xii, 326 pages</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">Electrical engineering developments series</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Includes bibliographical references and index</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">""FERROELECTRICS NEW RESEARCH ""; ""FERROELECTRICS NEW RESEARCH ""; ""CONTENTS ""; ""PREFACE ""; ""APPLICATION OF FERROELECTRICS: METAL FERROELECTRIC INSULATOR SEMICONDUCTOR FIELD EFFECT TRANSISTOR ""; ""ABSTRACT ""; ""1. INTRODUCTION OF FERROELECTRIC FIELD EFFECT TRANSISTOR ""; ""Retention ""; ""Leakage Current ""; ""Depolarization Field""; ""Disturbance ""; ""2. STUDY FOR FEFET ""; ""2.1. Improvement of Ferroelectric Materials for MFIS FeFET ""; ""2.1.1. Photochemical Metal-Organic Deposition (PMOD) ""; ""2.1.1.1. Application of PMOD to the Formation of PZT Thin Films""</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">""2.1.1.2. Application of PMOD to the Formation of Bi3.25La0.75Ti3O12 Thin Films """"2.1.2. Electron Beam-Induced Metal-Organic Deposition (EMOD) ""; ""2.1.2.1. Ferroelectric Properties of Sub 50-nm Direct-Patterned Pb(Zr, Ti)O3 Thin Films ""; ""2.1.3. Composition Control in the Chemical Solution Process ""; ""2.1.3.1. The Effects of Solvent on the Properties of Sol-Gel Derived PZT Thin Films ""; ""2.1.4. The Effect of Film Thickness and Annealing Temperature ""; ""2.1.4.1. The Effects of Film Thickness of PZT on the Crystallization and Ferroelectric Properties ""</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">""2.1.4.2. Substrate Modification for the Direct Formation of PZT Films with Perovskite Structure """"2.1.5. Element Substitution in Ferroelectric Materials ""; ""2.1.5.1. Ferroelectric Properties of La Substituted Bi4Ti3O12 Thin Films ""; ""2.1.5.2. Structural and Electrical Properties of Bi4-XNdxTi3O12 Thin Films ""; ""2.1.5.3. Development of Sol-Gel Precursor System for PZT Thin Films Containing Various La Contents ""; ""2.1.5.4. Electrical Properties of PLZT Thin Films with Various Zr/Ti Ratios ""</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">""2.1.5.5. Synthesis and Characterization of Ferroelectric Properties of Ce2Ti2O7 Thin Films with Ce3+ """"2.1.6. Ferroelectric Multilayer Structure""; ""2.1.6.1. Stacking Effect on the Ferroelectric Properties of PZT/PLZT Multilayer Thin Films ""; ""2.1.6.2. Electric and Ferroelectric Properties of PZT/BLT and PZT/SBT Multilayer Thin Films""; ""2.1.6.3. Formation of Multilayer Thin Films of Nd2Ti2O7 and Bi3.25La0.75Ti3O12 For Applying to Ferroelectric Field Effect Transistor ""; ""2.2.6.4. Effect of SrTiO3 Buffer Layer on the Phase Formation and Properties of BiFeO3 Thin Films ""</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">""2.2. Study on the Improvement of Retention Property in MFIS-FeFET """"2.3.1. Insulator Materials in MFIS for Retention Improvement of FeFET ""; ""2.2.2. Ferroelectric Materials in MFIS for Retention Improvement of FeFET ""; ""CONCLUSION ""; ""REFERENCES ""; ""RESONANT AND NON-RESONANT MICROWAVE ABSORPTION STUDIES IN MULTIFERROIC MATERIALS ""; ""ABSTRACT""; ""1. INTRODUCTION ""; ""2. EXPERIMENTAL METHODS ""; ""2.1. Resonant Microwave Absorption Measurement (EPR Technique) ""; ""2.2. Non-Resonant Microwave Absorption Measurements (MAMMAS and LFMA) ""; ""3. MULTIFERROIC MATERIALS STUDIES ""</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Ferroelectric crystals</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">SCIENCE / Physics / Electricity</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">SCIENCE / Physics / Electromagnetism</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Ferroelectric crystals</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Ferroelectric crystals</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Ferroelektrizität</subfield><subfield code="0">(DE-588)4154126-1</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Ferroelektrizität</subfield><subfield code="0">(DE-588)4154126-1</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="8">1\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Huang, Xui Li</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ma, Su Lyn</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-4-EBA</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-029186315</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=540905</subfield><subfield code="l">FAW01</subfield><subfield code="p">ZDB-4-EBA</subfield><subfield code="q">FAW_PDA_EBA</subfield><subfield code="x">Aggregator</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=540905</subfield><subfield code="l">FAW02</subfield><subfield code="p">ZDB-4-EBA</subfield><subfield code="q">FAW_PDA_EBA</subfield><subfield code="x">Aggregator</subfield><subfield code="3">Volltext</subfield></datafield></record></collection> |
| id | DE-604.BV043775255 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T07:34:46Z |
| institution | BVB |
| isbn | 1619422905 9781619422902 9781619422827 1619422824 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-029186315 |
| oclc_num | 832316135 |
| open_access_boolean | |
| owner | DE-1046 DE-1047 |
| owner_facet | DE-1046 DE-1047 |
| physical | xii, 326 pages |
| psigel | ZDB-4-EBA ZDB-4-EBA FAW_PDA_EBA |
| publishDate | 2012 |
| publishDateSearch | 2012 |
| publishDateSort | 2012 |
| publisher | Nova Science Publishers, Inc |
| record_format | marc |
| series2 | Electrical engineering developments series |
| spelling | Ferroelectrics new research Xui Li Huang and Su Lyn Ma, editors New York Nova Science Publishers, Inc ©2012 xii, 326 pages txt rdacontent c rdamedia cr rdacarrier Electrical engineering developments series Includes bibliographical references and index ""FERROELECTRICS NEW RESEARCH ""; ""FERROELECTRICS NEW RESEARCH ""; ""CONTENTS ""; ""PREFACE ""; ""APPLICATION OF FERROELECTRICS: METAL FERROELECTRIC INSULATOR SEMICONDUCTOR FIELD EFFECT TRANSISTOR ""; ""ABSTRACT ""; ""1. INTRODUCTION OF FERROELECTRIC FIELD EFFECT TRANSISTOR ""; ""Retention ""; ""Leakage Current ""; ""Depolarization Field""; ""Disturbance ""; ""2. STUDY FOR FEFET ""; ""2.1. Improvement of Ferroelectric Materials for MFIS FeFET ""; ""2.1.1. Photochemical Metal-Organic Deposition (PMOD) ""; ""2.1.1.1. Application of PMOD to the Formation of PZT Thin Films"" ""2.1.1.2. Application of PMOD to the Formation of Bi3.25La0.75Ti3O12 Thin Films """"2.1.2. Electron Beam-Induced Metal-Organic Deposition (EMOD) ""; ""2.1.2.1. Ferroelectric Properties of Sub 50-nm Direct-Patterned Pb(Zr, Ti)O3 Thin Films ""; ""2.1.3. Composition Control in the Chemical Solution Process ""; ""2.1.3.1. The Effects of Solvent on the Properties of Sol-Gel Derived PZT Thin Films ""; ""2.1.4. The Effect of Film Thickness and Annealing Temperature ""; ""2.1.4.1. The Effects of Film Thickness of PZT on the Crystallization and Ferroelectric Properties "" ""2.1.4.2. Substrate Modification for the Direct Formation of PZT Films with Perovskite Structure """"2.1.5. Element Substitution in Ferroelectric Materials ""; ""2.1.5.1. Ferroelectric Properties of La Substituted Bi4Ti3O12 Thin Films ""; ""2.1.5.2. Structural and Electrical Properties of Bi4-XNdxTi3O12 Thin Films ""; ""2.1.5.3. Development of Sol-Gel Precursor System for PZT Thin Films Containing Various La Contents ""; ""2.1.5.4. Electrical Properties of PLZT Thin Films with Various Zr/Ti Ratios "" ""2.1.5.5. Synthesis and Characterization of Ferroelectric Properties of Ce2Ti2O7 Thin Films with Ce3+ """"2.1.6. Ferroelectric Multilayer Structure""; ""2.1.6.1. Stacking Effect on the Ferroelectric Properties of PZT/PLZT Multilayer Thin Films ""; ""2.1.6.2. Electric and Ferroelectric Properties of PZT/BLT and PZT/SBT Multilayer Thin Films""; ""2.1.6.3. Formation of Multilayer Thin Films of Nd2Ti2O7 and Bi3.25La0.75Ti3O12 For Applying to Ferroelectric Field Effect Transistor ""; ""2.2.6.4. Effect of SrTiO3 Buffer Layer on the Phase Formation and Properties of BiFeO3 Thin Films "" ""2.2. Study on the Improvement of Retention Property in MFIS-FeFET """"2.3.1. Insulator Materials in MFIS for Retention Improvement of FeFET ""; ""2.2.2. Ferroelectric Materials in MFIS for Retention Improvement of FeFET ""; ""CONCLUSION ""; ""REFERENCES ""; ""RESONANT AND NON-RESONANT MICROWAVE ABSORPTION STUDIES IN MULTIFERROIC MATERIALS ""; ""ABSTRACT""; ""1. INTRODUCTION ""; ""2. EXPERIMENTAL METHODS ""; ""2.1. Resonant Microwave Absorption Measurement (EPR Technique) ""; ""2.2. Non-Resonant Microwave Absorption Measurements (MAMMAS and LFMA) ""; ""3. MULTIFERROIC MATERIALS STUDIES "" Ferroelectric crystals SCIENCE / Physics / Electricity bisacsh SCIENCE / Physics / Electromagnetism bisacsh Ferroelectric crystals fast Ferroelektrizität (DE-588)4154126-1 gnd rswk-swf Ferroelektrizität (DE-588)4154126-1 s 1\p DE-604 Huang, Xui Li Sonstige oth Ma, Su Lyn Sonstige oth 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Ferroelectrics new research Ferroelectric crystals SCIENCE / Physics / Electricity bisacsh SCIENCE / Physics / Electromagnetism bisacsh Ferroelectric crystals fast Ferroelektrizität (DE-588)4154126-1 gnd |
| subject_GND | (DE-588)4154126-1 |
| title | Ferroelectrics new research |
| title_auth | Ferroelectrics new research |
| title_exact_search | Ferroelectrics new research |
| title_full | Ferroelectrics new research Xui Li Huang and Su Lyn Ma, editors |
| title_fullStr | Ferroelectrics new research Xui Li Huang and Su Lyn Ma, editors |
| title_full_unstemmed | Ferroelectrics new research Xui Li Huang and Su Lyn Ma, editors |
| title_short | Ferroelectrics |
| title_sort | ferroelectrics new research |
| title_sub | new research |
| topic | Ferroelectric crystals SCIENCE / Physics / Electricity bisacsh SCIENCE / Physics / Electromagnetism bisacsh Ferroelectric crystals fast Ferroelektrizität (DE-588)4154126-1 gnd |
| topic_facet | Ferroelectric crystals SCIENCE / Physics / Electricity SCIENCE / Physics / Electromagnetism Ferroelektrizität |
| work_keys_str_mv | AT huangxuili ferroelectricsnewresearch AT masulyn ferroelectricsnewresearch |