The physics of semiconductors: an introduction including nanophysics and applications
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| Main Author: | |
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| Format: | Electronic eBook |
| Language: | English |
| Published: |
Berlin [u.a.]
Springer
2016
|
| Edition: | 3. ed. |
| Series: | Graduate texts in physics
|
| Subjects: | |
| Online Access: | TUM01 Volltext Inhaltsverzeichnis |
| Physical Description: | 1 Online-Ressource Ill., graph. Darst. |
| ISBN: | 9783319238807 |
| DOI: | 10.1007/978-3-319-23880-7 |
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| 245 | 1 | 0 | |a The physics of semiconductors |b an introduction including nanophysics and applications |c Marius Grundmann |
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Record in the Search Index
| _version_ | 1804176597712896000 |
|---|---|
| adam_text | Titel: The physics of semiconductors
Autor: Grundmann, Marius
Jahr: 2016
Contents
1 Introduction................................................................................1
1.1 Timetable and Key Achievements........................................2
1.2 Nobel Prize Winners..........................................................12
1.3 General Information..........................................................21
Part I Fundamentals
2 Bonds..........................................................................................25
2.1 Introduction......................................................................25
2.2 Covalent Bonds................................................................25
2.2.1 Electron-Pair Bond..............................................26
2.2.2 sp3 Bonds............................................................26
2.2.3 sp2 Bonds............................................................29
2.3 Ionic Bonds..............................................32
2.4 Mixed Bonds....................................................................33
2.5 Metallic Bonding..............................................................36
2.6 van-der-Waals Bonds..........................................................37
2.7 Hamilton Operator of the Solid............................................38
3 Crystals......................................................................................41
3.1 Introduction......................................................................41
3.2 Crystal Structure................................................................42
3.3 Lattice..............................................................................43
3.3.1 Unit Cell............................................................43
3.3.2 Point Group........................................................43
3.3.3 Space Group........................................................45
3.3.4 2D Bravais Lattices..............................................46
3.3.5 3D Bravais Lattices..............................................46
3.3.6 Polycrystalline Semiconductors..............................51
3.3.7 Amorphous Semiconductors..................................51
xi
xii Contents
3.4 Important Crystal Structures................................................53
3.4.1 Rocksalt Structure................................................53
3.4.2 CsCl Structure....................................................53
3.4.3 Diamond Structure................................................54
3.4.4 Zincblende Structure............................................55
3.4.5 Wurtzite Structure................................................56
3.4.6 Chalcopyrite Structure..........................................57
3.4.7 Spinel Structure....................................................59
3.4.8 Fluorite Structure..................................................61
3.4.9 Delafossite Structure............................................61
3.4.10 Perovskite Structure..............................................61
3.4.11 NiAs Structure....................................................62
3.4.12 Further Structures................................................63
3.5 Polytypism........................................................................64
3.6 Reciprocal Lattice..............................................................66
3.6.1 Reciprocal Lattice Vectors....................................66
3.6.2 Miller Indices......................................................67
3.6.3 Brillouin Zone....................................................70
3.7 Alloys..............................................................................72
3.7.1 Random Alloys....................................................72
3.7.2 Phase Diagram....................................................74
3.7.3 Virtual Crystal Approximation..............................77
3.7.4 Lattice Parameter..................................................77
3.7.5 Ordering..............................................................77
4 Defects........................................................................................81
4.1 Introduction......................................................................81
4.2 Point Defects....................................................................81
4.2.1 Point Defect Types..............................................81
4.2.2 Thermodynamics..................................................83
4.2.3 Diffusion............................................................85
4.2.4 Dopant Distribution..............................................88
4.2.5 Large Concentration Effects..................................92
4.3 Dislocations......................................................................96
4.3.1 Dislocation Types................................................96
4.3.2 Visualization of Dislocations by Etching................100
4.3.3 Impurity Hardening..............................................101
4.4 Extended Defects..............................................................103
4.4.1 Micro-cracks........................................................103
4.4.2 Stacking Faults....................................................103
4.4.3 Grain Boundaries................................................105
4.4.4 Antiphase and Inversion Domains..........................106
4.5 Disorder............................................................................110
Contents xiii
5 Mechanical Properties..................................................................Ill
5.1 Introduction......................................................................Ill
5.2 Lattice Vibrations..............................................................Ill
5.2.1 Monoatomic Linear Chain....................................112
5.2.2 Diatomic Linear Chain..........................................115
5.2.3 Lattice Vibrations of a Three-Dimensional
Crystal................................................................118
5.2.4 Density of States..................................................121
5.2.5 Phonons..............................................................123
5.2.6 Localized Vibrational Modes................................124
5.2.7 Phonons in Alloys................................................127
5.2.8 Disorder..............................................................128
5.2.9 Electric Field Created by Optical Phonons..............129
5.3 Elasticity..........................................................................132
5.3.1 Thermal Expansion..............................................132
5.3.2 Stress-Strain Relation..........................................133
5.3.3 Biaxial Strain......................................................137
5.3.4 Three-Dimensional Strain......................................139
5.3.5 Substrate Bending................................................141
5.3.6 Scrolling............................................................143
5.4 Plasticity..........................................................................145
5.4.1 Critical Thickness................................................145
5.4.2 Cleaving..............................................................150
5.4.3 Wafer Breakage..................................................151
6 Band Structure............................................................................153
6.1 Introduction......................................................................153
6.2 Electrons in a Periodic Potential..........................................154
6.2.1 Bloch s Theorem..................................................154
6.2.2 Free-Electron Dispersion......................................155
6.2.3 Non-Vanishing Potential........................................156
6.2.4 Kramer s Degeneracy............................................159
6.2.5 Symmetry Considerations......................................160
6.3 Band Structures of Selected Semiconductors..........................162
6.3.1 Silicon................................................................163
6.3.2 Germanium..........................................................163
6.3.3 GaAs..................................................................163
6.3.4 GaP....................................................................163
6.3.5 GaN..................................................................163
6.3.6 Lead Salts..........................................................163
6.3.7 MgO, ZnO, CdO..................................................164
6.3.8 Chalcopyrites......................................................165
6.3.9 Spinels................................................................166
6.3.10 Delafossites........................................................166
6.3.11 Perovskites..........................................................167
xjv Contents
6.4 Systematics of Semiconductor Band Gaps............................168
6.5 Alloy Semiconductors........................................................170
6.6 Amorphous Semiconductors................................................173
6.7 Temperature Dependence of the Band Gap............................174
6.8 Isotope Dependence of the Band Gap..................................176
6.9 Electron Dispersion............................................................177
6.9.1 Equation of Electron Motion..................................177
6.9.2 Effective Mass of Electrons..................................178
6.9.3 Nonparabolicity of Electron Mass..........................181
6.10 Holes................................................................................183
6.10.1 Hole Concept......................................................183
6.10.2 Hole Dispersion Relation......................................184
6.10.3 Valence-Band Fine Structure..................................188
6.10.4 Band Inversion....................................................189
6.11 Strain Effects on the Band Structure....................................190
6.11.1 Strain Effect on Band Edges..................................191
6.11.2 Strain Effect on Effective Masses..........................193
6.11.3 Interaction with a Localized Level..........................194
6.12 Density of States................................................................195
6.12.1 General Band Structure........................................195
6.12.2 Amorphous Semiconductors..................................196
6.12.3 Free-Electron Gas................................................199
7 Electronic Defect States................................................................203
7.1 Introduction......................................................................203
7.2 Carrier Concentration..........................................................204
7.3 Intrinsic Conduction..........................................................207
7.4 Doping............................................................................209
7.4.1 Concept..............................................................209
7.4.2 Doping Principles................................................210
7.5 Shallow Defects................................................................211
7.5.1 Donors................................................................211
7.5.2 Acceptors............................................................220
7.5.3 Compensation......................................................223
7.5.4 Multiple Impurities..............................................226
7.5.5 Amphoteric Impurities..........................................228
7.5.6 Autodoping........................................................229
7.5.7 High Doping........................................................230
7.6 Quasi-Fermi Levels............................................................234
7.7 Deep Levels......................................................................235
7.7.1 Charge States......................................................236
7.7.2 Double Donors....................................................238
7.7.3 Double Acceptors................................................240
7.7.4 Jahn-Teller Effect................................................241
7.7.5 Negative-!/ Center................................................242
Contents xv
7.7.6 DX Center..........................................................245
7.7.7 EL2 Defect..........................................................247
7.7.8 Semi-insulating Semiconductors............................247
7.7.9 Isoelectronic Impurities........................................249
7.7.10 Surface States......................................................251
7.8 Hydrogen in Semiconductors..............................................251
8 Transport....................................................................................255
8.1 Introduction......................................................................255
8.2 Conductivity......................................................................256
8.3 Low-Field Transport..........................................................258
8.3.1 Mobility..............................................................258
8.3.2 Microscopic Scattering Processes............................259
8.3.3 Ionized Impurity Scattering....................................260
8.3.4 Deformation Potential Scattering............................261
8.3.5 Piezoelectric Potential Scattering............................262
8.3.6 Polar Optical Scattering........................................262
8.3.7 Dislocation Scattering..........................................263
8.3.8 Grain Boundary Scattering....................................263
8.3.9 Temperature Dependence......................................264
8.3.10 Doping Dependence..............................................266
8.3.11 Piezoresistivity....................................................267
8.4 High-Field Transport..........................................................268
8.4.1 Drift-Saturation Velocity......................................269
8.4.2 Negative Differential Resistivity............................269
8.4.3 Velocity Overshoot..............................................270
8.4.4 Impact Ionization..................................................271
8.5 High-Frequency Transport..................................................275
8.6 Polarons............................................................................275
8.6.1 Large Polarons....................................................275
8.6.2 Small Polarons....................................................277
8.7 Hopping Transport............................................................278
8.8 Transport in Amorphous Semiconductors..............................280
8.9 Ionic Transport..................................................................281
8.10 Diffusion..........................................................................282
8.11 Continuity Equation..........................................................284
8.12 Heat Conduction................................................................284
8.13 Coupled Heat and Charge Transport....................................286
8.13.1 Thermopower and Seebeck Effect..........................286
8.13.2 Peltier Effect........................................................289
9 Optical Properties........................................................................291
9.1 Spectral Regions and Overview..........................................291
9.2 Complex Dielectric Function..............................................292
9.3 Reflection and Diffraction..................................................293
xvi Contents
9.4 Absorption.................................... 295
9.5 Electron-Photon Interaction........................ 297
9.6 Band-Band Transitions........................... 299
9.6.1 Joint Density of States..........................................299
9.6.2 Direct Transitions................................................300
9.6.3 Indirect Transitions..............................................304
9.6.4 Urbach Tail........................................................307
9.6.5 Amorphous Semiconductors..................................308
9.6.6 Excitons..............................................................309
9.6.7 Phonon Broadening..............................................313
9.6.8 Exciton Polariton..................................................313
9.6.9 Bound-Exciton Absorption....................................317
9.6.10 Biexcitons..........................................................319
9.6.11 Trions................................................................319
9.6.12 Band Gap Renormalization....................................320
9.6.13 Electron-Hole Droplets........................................321
9.6.14 Two-Photon Absorption........................................322
9.7 Impurity Absorption..........................................................323
9.7.1 Shallow Levels.......................... 323
9.7.2 Deep Levels............................ 326
9.8 Absorption in the Presence of Free Charge Carriers........ 328
9.8.1 Free-Carrier Absorption........................................328
9.8.2 Burstein-Moss Shift............................................332
9.8.3 Inter-Valenceband Transitions................................334
9.8.4 Inter-Valley Transitions........................................335
9.8.5 Intra-Band Transitions..........................................336
9.9 Lattice Absorption..............................................................337
9.9.1 Dielectric Constant..............................................337
9.9.2 Reststrahlenbande................................................338
9.9.3 Polaritons............................................................339
9.9.4 Phonon-Plasmon Coupling....................................340
10 Recombination............................................................................343
10.1 Introduction......................................................................343
10.2 Band-Band Recombination................................................344
10.2.1 Spontaneous Emission..........................................344
10.2.2 Absorption..........................................................346
10.2.3 Stimulated Emission............................................347
10.2.4 Net Recombination Rate........................................347
10.2.5 Recombination Dynamics......................................349
10.2.6 Lasing................................................................350
10.3 Exciton Recombination......................................................351
10.3.1 Free Excitons......................................................351
10.3.2 Bound Excitons....................................................351
10.3.3 Alloy Broadening................................................358
Contents xv
10.4 Phonon Replica................................................................362
10.5 Self-Absorption..................................................................365
10.6 Donor-Acceptor Pair Transitions..........................................366
10.7 Inner-Impurity Recombination............................................367
10.8 Auger Recombination........................................................368
10.9 Band-Impurity Recombination............................................370
10.9.1 Shockley-Read-Hall Kinetics................................370
10.9.2 Multilevel Traps..................................................374
10.10 ABC Model......................................................................374
10.11 Field Effect......................................................................375
10.11.1 Thermally Activated Emission................................375
10.11.2 Direct Tunneling..................................................376
10.11.3 Assisted Tunneling..............................................376
10.12 Recombination at Extended Defects......................................377
10.12.1 Surfaces..............................................................377
10.12.2 Grain Boundaries................................................378
10.12.3 Dislocations........................................................378
10.13 Excess-Carrier Profiles........................................................379
10.13.1 Generation at Surface............................................379
10.13.2 Generation in the Bulk..........................................380
Part II Selected Topics
11 Surfaces......................................................................................385
11.1 Introduction......................................................................385
11.2 Surface Crystallography......................................................386
11.3 Surface Energy..................................................................387
11.4 Surface Reconstruction......................................................388
11.5 Surface Morphology..........................................................390
11.6 Surface Physical Properties..................................................392
11.6.1 Surface Phonons..................................................392
11.6.2 Surface Plasmons................................................393
11.6.3 Electronic Surface States......................................395
12 Heterostructures..........................................................................399
12.1 Introduction......................................................................399
12.2 Heteroepitaxy....................................................................400
12.2.1 Growth Methods..................................................400
12.2.2 Substrates............................................................400
12.2.3 Growth Modes....................................................403
12.2.4 Heterosubstrates..................................................405
12.2.5 Patterned Substrates..............................................410
12.2.6 Pseudomorphic Structures......................................412
12.2.7 Plastic Relaxation................................................413
12.2.8 Surfactants..........................................................414
xviii Contents
12.3 Energy Levels in Heterostructures........................................415
12.3.1 Band Lineup in Heterostructures............................415
12.3.2 Quantum Wells....................................................417
12.3.3 Superlattices........................................................424
12.3.4 Single Heterointerface Between Doped Materials.. . 424
12.4 Recombination in Quantum Wells........................................427
12.4.1 Thickness Dependence..........................................427
12.4.2 Broadening Effects..............................................428
12.4.3 Quantum Confined Stark Effect..............................431
12.5 Isotope Superlattices..........................................................433
12.6 Wafer Bonding..................................................................433
13 External Fields............................................................................437
13.1 Electric Fields....................................................................437
13.1.1 Bulk Material......................................................437
13.1.2 Quantum Wells....................................................439
13.2 Magnetic Fields................................................................441
13.2.1 Hall Effect..........................................................441
13.2.2 Free-Carrier Absorption........................................448
13.2.3 Energy Levels in Bulk Crystals..............................449
13.2.4 Energy Levels in a 2DEG......................................451
13.2.5 Shubnikov-de Haas Oscillations............................452
13.3 Quantum Hall Effect..........................................................453
13.3.1 Integral QHE......................................................455
13.3.2 Fractional QHE....................................................458
13.3.3 Weiss Oscillations................................................460
14 Nanostructures............................................................................461
14.1 Introduction......................................................................461
14.2 Quantum Wires..................................................................462
14.2.1 V-Groove Quantum Wires....................................462
14.2.2 Cleaved-Edge Overgrowth Quantum Wires..............465
14.2.3 Nanowhiskers......................................................465
14.2.4 Nanobelts............................................................467
14.2.5 Quantization in Two-Dimensional Potential
Wells..................................................................468
14.3 Quantum Dots..................................................................471
14.3.1 Quantization in Three-Dimensional Potential
Wells..................................................................471
14.3.2 Electrical and Transport Properties..........................473
14.3.3 Self-Assembled Preparation..................................477
14.3.4 Optical Properties................................................482
15 Polarized Semiconductors............................................................489
15.1 Introduction......................................................................489
15.2 Spontaneous Polarization....................................................489
Contents tit
15.3 Ferroelectricity..................................................................490
15.3.1 Materials............................................................492
15.3.2 Soft Phonon Mode..............................................492
15.3.3 Phase Transition..................................................493
15.3.4 Domains..............................................................496
15.3.5 Optical Properties................................................497
15.4 Piezoelectricity..................................................................498
15.4.1 Piezoelectric Effect..............................................498
15.4.2 Zincblende Crystals..............................................498
15.4.3 Wurtzite Crystals..................................................499
15.4.4 Piezoelectric Effects in Nanostructures....................503
16 Magnetic Semiconductors............................................................505
16.1 Introduction......................................................................505
16.2 Magnetic Semiconductors....................................................505
16.3 Diluted Magnetic Semiconductors........................................507
16.4 Spintronics........................................................................511
16.4.1 Spin Transistor....................................................512
16.4.2 Spin LED............................................................512
17 Organic Semiconductors..............................................................515
17.1 Introduction......................................................................515
17.2 Materials..........................................................................515
17.2.1 Small Organic Molecules, Polymers........................515
17.2.2 Organic Semiconductor Crystals............................516
17.3 Electronic Structure............................................................519
17.4 Doping............................................................................520
17.5 Transport Properties..........................................................521
17.6 Optical Properties..............................................................522
18 Graphene and Carbon Nanotubes................................................529
18.1 Graphene..........................................................................529
18.1.1 Structure............................................................529
18.1.2 Band Structure....................................................529
18.1.3 Electrical Properties..............................................531
18.1.4 Other Two-Dimensional Crystals............................536
18.2 Carbon Nanotubes..............................................................536
18.2.1 Structure............................................................536
18.2.2 Band Structure....................................................538
18.2.3 Optica] Properties................................................541
18.2.4 Other Anorganic Nanotubes..................................541
19 Dielectric Structures....................................................................545
19.1 Photonic Band Gap Materials..............................................545
19.1.1 Introduction........................................................545
19.1.2 General ID Scattering Theory................................546
xx Contents
19.1.3 Transmission of an /V-Period Potential....................548
19.1.4 The Quarter-Wave Stack......................................550
19.1.5 Formation of a 3D Band Structure..........................552
19.1.6 Disorder..............................................................558
19.1.7 Defect Modes......................................................558
19.1.8 Coupling to an Electronic Resonance......................562
19.2 Microscopic Resonators......................................................565
19.2.1 Microdiscs..........................................................565
19.2.2 Purcell Effect......................................................567
19.2.3 Deformed Resonators............................................568
19.2.4 Hexagonal Cavities..............................................571
20 Transparent Conductive Oxide Semiconductors............................575
20.1 Introduction......................................................................575
20.2 Materials..........................................................................575
20.3 Properties..........................................................................577
Part III Applications
21 Diodes........................................................................................583
21.1 Introduction......................................................................583
21.2 Metal-Semiconductor Contacts............................................583
21.2.1 Band Diagram in Equilibrium................................584
21.2.2 Space-Charge Region............................................589
21.2.3 Schottky Effect....................................................593
21.2.4 Capacitance........................................................594
21.2.5 Current-Voltage Characteristic..............................598
21.2.6 Ohmic Contacts....................................................611
21.2.7 Metal Contacts to Organic Semiconductors..............613
21.3 Metal-Insulator-Semiconductor Diodes................................615
21.3.1 Band Diagram for Ideal MIS Diode........................616
21.3.2 Space-Charge Region............................................619
21.3.3 Capacitance........................................................623
21.3.4 Nonideal MIS Diode............................................624
21.4 Bipolar Diodes..................................................................626
21.4.1 Band Diagram......................................................626
21.4.2 Space-Charge Region............................................626
21.4.3 Capacitance........................................................632
21.4.4 Current-Voltage Characteristics..............................633
21.4.5 Breakdown..........................................................644
21.4.6 Heterostructure Diodes..........................................649
21.4.7 Organic Semiconductor Diodes..............................650
21.5 Applications and Special Diode Devices..............................652
21.5.1 Rectification........................................................653
21.5.2 Frequency Mixing................................................655
Contents
21.5.3 Voltage Regulator................................................656
21.5.4 Zener Diodes......................................................658
21.5.5 Varactors............................................................658
21.5.6 Fast-Recovery Diodes..........................................660
21.5.7 Step-Recovery Diodes..........................................661
21.5.8 Pin-Diodes..........................................................662
21.5.9 Tunneling Diodes................................................663
21.5.10 Backward Diodes................................................666
21.5.11 Gunn Diodes......................................................667
22 Light-to-Electricity Conversion....................................................669
22.1 Photocatalysis....................................................................669
22.2 Photoconductors................................................................670
22.2.1 Introduction........................................................670
22.2.2 Photoconductivity Detectors..................................671
22.2.3 Electrophotography..............................................674
22.2.4 QWIPs................................................................675
22.2.5 Blocked Impurity-Band Detectors..........................678
22.3 Photodiodes......................................................................680
22.3.1 Introduction........................................................680
22.3.2 pn Photodiodes....................................................681
22.3.3 Pin Photodiodes..................................................684
22.3.4 Position-Sensing Detector......................................686
22.3.5 MSM Photodiodes................................................686
22.3.6 Avalanche Photodiodes........................................692
22.3.7 Traveling-Wave Photodetectors..............................695
22.3.8 Charge Coupled Devices......................................698
22.3.9 Photodiode Arrays................................................705
22.4 Solar Cells........................................................................707
22.4.1 Solar Radiation....................................................708
22.4.2 Ideal Solar Cells..................................................709
22.4.3 Real Solar Cells..................................................714
22.4.4 Design Refinements..............................................715
22.4.5 Modules..............................................................716
22.4.6 Solar-Cell Types..................................................718
22.4.7 Commercial Issues................................................721
23 Electricity-to-Light Conversion....................................................725
23.1 Radiometric and Photometric Quantities................................725
23.1.1 Radiometric Quantities..........................................725
23.1.2 Photometric Quantities..........................................725
23.2 Scintillators......................................................................727
23.2.1 CIE Chromaticity Diagram....................................727
23.2.2 Display Applications............................................730
xxii Contents
23.2.3 Radiation Detection....................... 731
23.2.4 Luminescence Mechanisms.................. 732
23.3 Light-Emitting Diodes............................ 733
23.3.1 Introduction........................................................733
23.3.2 Spectral Ranges....................................................734
23.3.3 Efficiencies..........................................................735
23.3.4 Device Design....................................................736
23.3.5 White LEDs........................................................743
23.3.6 Quantum Dot LEDs..............................................746
23.3.7 Organic LEDs......................................................747
23.4 Lasers..............................................................................749
23.4.1 Introduction........................................................749
23.4.2 Applications........................................................750
23.4.3 Gain..................................................................752
23.4.4 Optical Mode......................................................755
23.4.5 Loss Mechanisms................................................762
23.4.6 Threshold............................................................763
23.4.7 Spontaneous Emission Factor................................765
23.4.8 Output Power......................................................766
23.4.9 Temperature Dependence......................................768
23.4.10 Mode Spectrum....................................................769
23.4.11 Longitudinal Single-Mode Lasers..........................770
23.4.12 Tunability............................................................771
23.4.13 Dynamics and Modulation....................................774
23.4.14 Surface-Emitting Lasers........................................778
23.4.15 Optically Pumped Semiconductor Lasers................782
23.4.16 Quantum Cascade Lasers......................................783
23.4.17 Hot-Hole Lasers..................................................784
23.5 Semiconductor Optical Amplifiers........................................785
24 Transistors......................................... 787
24.1 Introduction................................... 787
24.2 Bipolar Transistors.............................. 788
24.2.1 Carrier Density and Currents..................................790
24.2.2 Current Amplification..........................................792
24.2.3 Ebers-Moll Model................................................794
24.2.4 Current-Voltage Characteristics..............................796
24.2.5 Basic Circuits......................................................798
24.2.6 High-Frequency Properties....................................800
24.2.7 Heterojunction Bipolar Transistors..........................800
24.2.8 Light-Emitting Transistors....................................801
24.3 Field-Effect Transistors......................................................802
24.4 JFET and MESFET.............................. 804
24.4.1 General Principle......................... 804
24.4.2 Static Characteristics...................... 805
Contents xxiii
24.4.3 Normally on and Normally Off FETs......................809
24.4.4 Field-Dependent Mobility......................................809
24.4.5 High-Frequency Properties....................................812
24.5 MOSFETs........................................................................812
24.5.1 Operation Principle..............................................812
24.5.2 Current-Voltage Characteristics..............................814
24.5.3 MOSFET Types..................................................818
24.5.4 Complementary MOS..........................................818
24.5.5 Large-Scale Integration........................................821
24.5.6 Tunneling FETs..................................................829
24.5.7 Nonvolatile Memories..........................................830
24.5.8 Heterojunction FETs............................................833
24.6 Thin-Film Transistors........................................................837
24.6.1 Annealing of Amorphous Silicon............................837
24.6.2 TFT Devices........................................................838
24.6.3 OFETs................................................................839
Appendix A: Tensors..........................................................................843
Appendix B: Point and Space Groups................................................847
Appendix C: Kramers-Kronig Relations..............................................851
Appendix D: Oscillator Strength........................................................853
Appendix E: Quantum Statistics..........................................................859
Appendix F: Kronig-Penney Model....................................................865
Appendix G: The k • p Perturbation Theory........................................869
Appendix H: Effective-Mass Theory....................................................873
Appendix I: Boltzmann Transport Theory..........................................875
Appendix J: Noise..............................................................................881
References..........................................................................................891
Index................................................................................................967
|
| any_adam_object | 1 |
| author | Grundmann, Marius 1964- |
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| author_facet | Grundmann, Marius 1964- |
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| author_variant | m g mg |
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| dewey-full | 537.622 |
| dewey-hundreds | 500 - Natural sciences and mathematics |
| dewey-ones | 537 - Electricity and electronics |
| dewey-raw | 537.622 |
| dewey-search | 537.622 |
| dewey-sort | 3537.622 |
| dewey-tens | 530 - Physics |
| discipline | Physik |
| doi_str_mv | 10.1007/978-3-319-23880-7 |
| edition | 3. ed. |
| format | Electronic eBook |
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| spelling | Grundmann, Marius 1964- Verfasser (DE-588)112740014 aut The physics of semiconductors an introduction including nanophysics and applications Marius Grundmann 3. ed. Berlin [u.a.] Springer 2016 1 Online-Ressource Ill., graph. Darst. txt rdacontent c rdamedia cr rdacarrier Graduate texts in physics Festkörperphysik (DE-588)4016921-2 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf Halbleiterphysik (DE-588)4113829-6 gnd rswk-swf Nanotechnologie (DE-588)4327470-5 gnd rswk-swf 1\p (DE-588)4123623-3 Lehrbuch gnd-content Halbleiterphysik (DE-588)4113829-6 s DE-604 Halbleiter (DE-588)4022993-2 s Festkörperphysik (DE-588)4016921-2 s Nanotechnologie (DE-588)4327470-5 s 2\p DE-604 Erscheint auch als Druckausgabe 978-3-319-23879-1 https://doi.org/10.1007/978-3-319-23880-7 Verlag URL des Erstveröffentlichers Volltext HBZ Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=029184598&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Grundmann, Marius 1964- The physics of semiconductors an introduction including nanophysics and applications Festkörperphysik (DE-588)4016921-2 gnd Halbleiter (DE-588)4022993-2 gnd Halbleiterphysik (DE-588)4113829-6 gnd Nanotechnologie (DE-588)4327470-5 gnd |
| subject_GND | (DE-588)4016921-2 (DE-588)4022993-2 (DE-588)4113829-6 (DE-588)4327470-5 (DE-588)4123623-3 |
| title | The physics of semiconductors an introduction including nanophysics and applications |
| title_auth | The physics of semiconductors an introduction including nanophysics and applications |
| title_exact_search | The physics of semiconductors an introduction including nanophysics and applications |
| title_full | The physics of semiconductors an introduction including nanophysics and applications Marius Grundmann |
| title_fullStr | The physics of semiconductors an introduction including nanophysics and applications Marius Grundmann |
| title_full_unstemmed | The physics of semiconductors an introduction including nanophysics and applications Marius Grundmann |
| title_short | The physics of semiconductors |
| title_sort | the physics of semiconductors an introduction including nanophysics and applications |
| title_sub | an introduction including nanophysics and applications |
| topic | Festkörperphysik (DE-588)4016921-2 gnd Halbleiter (DE-588)4022993-2 gnd Halbleiterphysik (DE-588)4113829-6 gnd Nanotechnologie (DE-588)4327470-5 gnd |
| topic_facet | Festkörperphysik Halbleiter Halbleiterphysik Nanotechnologie Lehrbuch |
| url | https://doi.org/10.1007/978-3-319-23880-7 http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=029184598&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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