GaN transistors for efficient power conversion:
Saved in:
| Main Author: | |
|---|---|
| Format: | Electronic eBook |
| Language: | English |
| Published: |
Chichester, West Sussex
Wiley
[2014]
|
| Edition: | Second edition |
| Subjects: | |
| Online Access: | FHI01 FHR01 FRO01 TUM01 UBG01 Volltext |
| Item Description: | Includes bibliographical references and index Gallium nitride (GaN) is an emerging technology that promises to displace siliconMOSFETs in the next generation of power transistors. As silicon approaches itsperformance limits, GaN devices offer superior conductivity and switching characteristics,allowing designers to greatly reduce system power losses, size, weight, and cost. This timely second edition has been substantially expanded to keep students andpracticing power conversion engineers ahead of the learning curve in GaN technologyadvancements. Acknowledging that GaN transistors are not one-to-one replacements forthe current MOSFET technology, this book serves as a practical guide for understandingbasic GaN transistor construction, characteristics, and applications. Included arediscussions on the fundamental physics of these power semiconductors, layout and othercircuit design considerations, as well as specific application examples demonstratingdesign techniques when employing GaN devices. With higher-frequency switching capabilities, GaN devices offer the chance to increaseefficiency in existing applications such as DC'DC conversion, while opening possibilitiesfor new applications including wireless power transfer and envelope tracking. This bookis an essential learning tool and reference guide to enable power conversion engineers todesign energy-efficient, smaller and more cost-effective products using GaN transistors. Key features: Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications. Contains useful discussions on device'circuit interactions, which are highly valuable since the new and high performance GaN power transistors require thoughtfully designed drive/control circuits in order to fully achieve their performance potential. Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors ' see companion website for further details. A valuable learning resource for professional engineers and systems designers needing to fully understand new devices as well as electrical engineering students |
| Physical Description: | 1 Online-Ressource |
| ISBN: | 9781118844786 1118844785 9781118844793 1118844793 9781118844779 1118844777 |
Staff View
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| 500 | |a Gallium nitride (GaN) is an emerging technology that promises to displace siliconMOSFETs in the next generation of power transistors. As silicon approaches itsperformance limits, GaN devices offer superior conductivity and switching characteristics,allowing designers to greatly reduce system power losses, size, weight, and cost. This timely second edition has been substantially expanded to keep students andpracticing power conversion engineers ahead of the learning curve in GaN technologyadvancements. Acknowledging that GaN transistors are not one-to-one replacements forthe current MOSFET technology, this book serves as a practical guide for understandingbasic GaN transistor construction, characteristics, and applications. Included arediscussions on the fundamental physics of these power semiconductors, layout and othercircuit design considerations, as well as specific application examples demonstratingdesign techniques when employing GaN devices. | ||
| 500 | |a With higher-frequency switching capabilities, GaN devices offer the chance to increaseefficiency in existing applications such as DC'DC conversion, while opening possibilitiesfor new applications including wireless power transfer and envelope tracking. This bookis an essential learning tool and reference guide to enable power conversion engineers todesign energy-efficient, smaller and more cost-effective products using GaN transistors. Key features: Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications. Contains useful discussions on device'circuit interactions, which are highly valuable since the new and high performance GaN power transistors require thoughtfully designed drive/control circuits in order to fully achieve their performance potential. | ||
| 500 | |a Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors ' see companion website for further details. A valuable learning resource for professional engineers and systems designers needing to fully understand new devices as well as electrical engineering students | ||
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| dewey-raw | 621.3815/284 |
| dewey-search | 621.3815/284 |
| dewey-sort | 3621.3815 3284 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik Elektrotechnik / Elektronik / Nachrichtentechnik |
| edition | Second edition |
| format | Electronic eBook |
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| spelling | Lidow, Alex 1954- Verfasser (DE-588)1147160171 aut GaN transistors for efficient power conversion Alex Lidow, Johan Strydom, Michael de Rooij, David Reusch Second edition Chichester, West Sussex Wiley [2014] 1 Online-Ressource txt rdacontent c rdamedia cr rdacarrier Includes bibliographical references and index Gallium nitride (GaN) is an emerging technology that promises to displace siliconMOSFETs in the next generation of power transistors. As silicon approaches itsperformance limits, GaN devices offer superior conductivity and switching characteristics,allowing designers to greatly reduce system power losses, size, weight, and cost. This timely second edition has been substantially expanded to keep students andpracticing power conversion engineers ahead of the learning curve in GaN technologyadvancements. Acknowledging that GaN transistors are not one-to-one replacements forthe current MOSFET technology, this book serves as a practical guide for understandingbasic GaN transistor construction, characteristics, and applications. Included arediscussions on the fundamental physics of these power semiconductors, layout and othercircuit design considerations, as well as specific application examples demonstratingdesign techniques when employing GaN devices. With higher-frequency switching capabilities, GaN devices offer the chance to increaseefficiency in existing applications such as DC'DC conversion, while opening possibilitiesfor new applications including wireless power transfer and envelope tracking. This bookis an essential learning tool and reference guide to enable power conversion engineers todesign energy-efficient, smaller and more cost-effective products using GaN transistors. Key features: Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications. Contains useful discussions on device'circuit interactions, which are highly valuable since the new and high performance GaN power transistors require thoughtfully designed drive/control circuits in order to fully achieve their performance potential. Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors ' see companion website for further details. A valuable learning resource for professional engineers and systems designers needing to fully understand new devices as well as electrical engineering students TECHNOLOGY & ENGINEERING / Mechanical bisacsh Field-effect transistors fast Gallium nitride fast Field-effect transistors Gallium nitride HEMT (DE-588)4211873-6 gnd rswk-swf Effizienz (DE-588)4013585-8 gnd rswk-swf Galliumnitrid (DE-588)4375592-6 gnd rswk-swf Energieumwandlung (DE-588)4014730-7 gnd rswk-swf Effizienz (DE-588)4013585-8 s Energieumwandlung (DE-588)4014730-7 s Galliumnitrid (DE-588)4375592-6 s HEMT (DE-588)4211873-6 s 1\p DE-604 Erscheint auch als Druck-Ausgabe, Hardcover 978-1-118-84476-2 https://onlinelibrary.wiley.com/doi/book/10.1002/9781118844779 Verlag URL des Erstveröffentlichers Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Lidow, Alex 1954- GaN transistors for efficient power conversion TECHNOLOGY & ENGINEERING / Mechanical bisacsh Field-effect transistors fast Gallium nitride fast Field-effect transistors Gallium nitride HEMT (DE-588)4211873-6 gnd Effizienz (DE-588)4013585-8 gnd Galliumnitrid (DE-588)4375592-6 gnd Energieumwandlung (DE-588)4014730-7 gnd |
| subject_GND | (DE-588)4211873-6 (DE-588)4013585-8 (DE-588)4375592-6 (DE-588)4014730-7 |
| title | GaN transistors for efficient power conversion |
| title_auth | GaN transistors for efficient power conversion |
| title_exact_search | GaN transistors for efficient power conversion |
| title_full | GaN transistors for efficient power conversion Alex Lidow, Johan Strydom, Michael de Rooij, David Reusch |
| title_fullStr | GaN transistors for efficient power conversion Alex Lidow, Johan Strydom, Michael de Rooij, David Reusch |
| title_full_unstemmed | GaN transistors for efficient power conversion Alex Lidow, Johan Strydom, Michael de Rooij, David Reusch |
| title_short | GaN transistors for efficient power conversion |
| title_sort | gan transistors for efficient power conversion |
| topic | TECHNOLOGY & ENGINEERING / Mechanical bisacsh Field-effect transistors fast Gallium nitride fast Field-effect transistors Gallium nitride HEMT (DE-588)4211873-6 gnd Effizienz (DE-588)4013585-8 gnd Galliumnitrid (DE-588)4375592-6 gnd Energieumwandlung (DE-588)4014730-7 gnd |
| topic_facet | TECHNOLOGY & ENGINEERING / Mechanical Field-effect transistors Gallium nitride HEMT Effizienz Galliumnitrid Energieumwandlung |
| url | https://onlinelibrary.wiley.com/doi/book/10.1002/9781118844779 |
| work_keys_str_mv | AT lidowalex gantransistorsforefficientpowerconversion |