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Bibliographic Details
Main Author:	Voldman, Steven H. (Author)
Format:	Electronic eBook
Language:	English
Published:	Chichester, West Sussex, England John Wiley ©2007
Subjects:	TECHNOLOGY & ENGINEERING / Electronics / Solid State TECHNOLOGY & ENGINEERING / Electronics / Semiconductors Metal oxide semiconductors, Complementary CMOS-Schaltung Latch-up-Effekt
Online Access:	FRO01 UBG01 Volltext
Item Description:	Includes bibliographical references and index
Physical Description:	1 Online-Ressource (xxii, 450 pages)
ISBN:	9780470516171 0470516178 9780470516164 047051616X 1281318167 9781281318169 9780470016428 0470016426

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MARC


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Record in the Search Index

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discipline	Elektrotechnik / Elektronik / Nachrichtentechnik
format	Electronic eBook
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indexdate	2024-07-10T07:24:37Z
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isbn	9780470516171 0470516178 9780470516164 047051616X 1281318167 9781281318169 9780470016428 0470016426
language	English
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physical	1 Online-Ressource (xxii, 450 pages)
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publisher	John Wiley
record_format	marc
spelling	Voldman, Steven H. Verfasser aut Latchup Steven H. Voldman Chichester, West Sussex, England John Wiley ©2007 1 Online-Ressource (xxii, 450 pages) txt rdacontent c rdamedia cr rdacarrier Includes bibliographical references and index TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh Metal oxide semiconductors, Complementary fast Metal oxide semiconductors, Complementary CMOS-Schaltung (DE-588)4148111-2 gnd rswk-swf Latch-up-Effekt (DE-588)4254228-5 gnd rswk-swf Latch-up-Effekt (DE-588)4254228-5 s CMOS-Schaltung (DE-588)4148111-2 s 1\p DE-604 https://onlinelibrary.wiley.com/doi/book/10.1002/9780470516171 Verlag URL des Erstveröffentlichers Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk
spellingShingle	Voldman, Steven H. Latchup TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh Metal oxide semiconductors, Complementary fast Metal oxide semiconductors, Complementary CMOS-Schaltung (DE-588)4148111-2 gnd Latch-up-Effekt (DE-588)4254228-5 gnd
subject_GND	(DE-588)4148111-2 (DE-588)4254228-5
title	Latchup
title_auth	Latchup
title_exact_search	Latchup
title_full	Latchup Steven H. Voldman
title_fullStr	Latchup Steven H. Voldman
title_full_unstemmed	Latchup Steven H. Voldman
title_short	Latchup
title_sort	latchup
topic	TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh Metal oxide semiconductors, Complementary fast Metal oxide semiconductors, Complementary CMOS-Schaltung (DE-588)4148111-2 gnd Latch-up-Effekt (DE-588)4254228-5 gnd
topic_facet	TECHNOLOGY & ENGINEERING / Electronics / Solid State TECHNOLOGY & ENGINEERING / Electronics / Semiconductors Metal oxide semiconductors, Complementary CMOS-Schaltung Latch-up-Effekt
url	https://onlinelibrary.wiley.com/doi/book/10.1002/9780470516171
work_keys_str_mv	AT voldmanstevenh latchup

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