Porous silicon carbide and gallium nitride: epitaxy, catalysis, and biotechnology applications
Saved in:
| Main Author: | |
|---|---|
| Format: | Electronic eBook |
| Language: | English |
| Published: |
Chichester, England
John Wiley & Sons
©2008
|
| Subjects: | |
| Online Access: | FRO01 UBG01 Volltext |
| Item Description: | Includes bibliographical references (pages 308-310) and index Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications presents the state-of-the-art in knowledge and applications of porous semiconductor materials having a wide band gap. This comprehensive reference begins¡with an overview of porous wide-band-gap technology, and describes the¡underlying scientific basis for each application area.¡Additional chapters cover preparation, characterization, and topography; processing porous SiC; medical applications; magnetic ion behavior, and many more |
| Physical Description: | 1 Online-Ressource (xiv, 318 pages, [6] pages of plates) |
| ISBN: | 9780470751817 0470751819 9780470751824 0470751827 1281322458 9781281322456 |
Staff View
MARC
| LEADER | 00000nmm a2200000zc 4500 | ||
|---|---|---|---|
| 001 | BV043387904 | ||
| 003 | DE-604 | ||
| 005 | 00000000000000.0 | ||
| 007 | cr|uuu---uuuuu | ||
| 008 | 160222s2008 |||| o||u| ||||||eng d | ||
| 020 | |a 9780470751817 |9 978-0-470-75181-7 | ||
| 020 | |a 0470751819 |9 0-470-75181-9 | ||
| 020 | |a 9780470751824 |c electronic bk. |9 978-0-470-75182-4 | ||
| 020 | |a 0470751827 |c electronic bk. |9 0-470-75182-7 | ||
| 020 | |a 1281322458 |9 1-281-32245-8 | ||
| 020 | |a 9781281322456 |9 978-1-281-32245-6 | ||
| 024 | 7 | |a 10.1002/9780470751817 |2 doi | |
| 035 | |a (ZDB-35-WIC)ocn214281929 | ||
| 035 | |a (OCoLC)214281929 | ||
| 035 | |a (DE-599)BVBBV043387904 | ||
| 040 | |a DE-604 |b ger |e aacr | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-861 | ||
| 082 | 0 | |a 621.3815/2 |2 22 | |
| 084 | |a UP 3100 |0 (DE-625)146372: |2 rvk | ||
| 100 | 1 | |a Feenstra, Randall M. |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Porous silicon carbide and gallium nitride |b epitaxy, catalysis, and biotechnology applications |c Randall M. Feenstra, Colin E.C. Wood |
| 264 | 1 | |a Chichester, England |b John Wiley & Sons |c ©2008 | |
| 300 | |a 1 Online-Ressource (xiv, 318 pages, [6] pages of plates) | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b c |2 rdamedia | ||
| 338 | |b cr |2 rdacarrier | ||
| 500 | |a Includes bibliographical references (pages 308-310) and index | ||
| 500 | |a Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications presents the state-of-the-art in knowledge and applications of porous semiconductor materials having a wide band gap. This comprehensive reference begins¡with an overview of porous wide-band-gap technology, and describes the¡underlying scientific basis for each application area.¡Additional chapters cover preparation, characterization, and topography; processing porous SiC; medical applications; magnetic ion behavior, and many more | ||
| 650 | 4 | |a Gallium nitride | |
| 650 | 4 | |a Semiconductors | |
| 650 | 4 | |a Silicon carbide | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING / Electronics / Solid State |2 bisacsh | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING / Electronics / Semiconductors |2 bisacsh | |
| 650 | 7 | |a Gallium nitride |2 fast | |
| 650 | 7 | |a Semiconductors |2 fast | |
| 650 | 7 | |a Silicon carbide |2 fast | |
| 650 | 4 | |a Silicon carbide | |
| 650 | 4 | |a Gallium nitride | |
| 650 | 4 | |a Semiconductors | |
| 650 | 0 | 7 | |a Halbleitertechnologie |0 (DE-588)4158814-9 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Membran |0 (DE-588)4038571-1 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Siliciumcarbid |0 (DE-588)4055009-6 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Galliumnitrid |0 (DE-588)4375592-6 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a Siliciumcarbid |0 (DE-588)4055009-6 |D s |
| 689 | 0 | 1 | |a Galliumnitrid |0 (DE-588)4375592-6 |D s |
| 689 | 0 | 2 | |a Halbleitertechnologie |0 (DE-588)4158814-9 |D s |
| 689 | 0 | |8 1\p |5 DE-604 | |
| 689 | 1 | 0 | |a Siliciumcarbid |0 (DE-588)4055009-6 |D s |
| 689 | 1 | 1 | |a Membran |0 (DE-588)4038571-1 |D s |
| 689 | 1 | |8 2\p |5 DE-604 | |
| 700 | 1 | |a Wood, Colin E. C. |e Sonstige |4 oth | |
| 776 | 0 | 8 | |i Erscheint auch als |n Druck-Ausgabe, Hardcover |z 0-470-51752-2 |
| 776 | 0 | 8 | |i Erscheint auch als |n Druck-Ausgabe, Hardcover |z 978-0-470-51752-9 |
| 856 | 4 | 0 | |u https://onlinelibrary.wiley.com/doi/book/10.1002/9780470751817 |x Verlag |z URL des Erstveröffentlichers |3 Volltext |
| 912 | |a ZDB-35-WIC | ||
| 940 | 1 | |q UBG_PDA_WIC | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-028806488 | ||
| 883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
| 883 | 1 | |8 2\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
| 966 | e | |u https://onlinelibrary.wiley.com/doi/book/10.1002/9780470751817 |l FRO01 |p ZDB-35-WIC |q FRO_PDA_WIC |x Verlag |3 Volltext | |
| 966 | e | |u https://onlinelibrary.wiley.com/doi/book/10.1002/9780470751817 |l UBG01 |p ZDB-35-WIC |q UBG_PDA_WIC |x Verlag |3 Volltext | |
Record in the Search Index
| _version_ | 1804175958810296320 |
|---|---|
| any_adam_object | |
| author | Feenstra, Randall M. |
| author_facet | Feenstra, Randall M. |
| author_role | aut |
| author_sort | Feenstra, Randall M. |
| author_variant | r m f rm rmf |
| building | Verbundindex |
| bvnumber | BV043387904 |
| classification_rvk | UP 3100 |
| collection | ZDB-35-WIC |
| ctrlnum | (ZDB-35-WIC)ocn214281929 (OCoLC)214281929 (DE-599)BVBBV043387904 |
| dewey-full | 621.3815/2 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815/2 |
| dewey-search | 621.3815/2 |
| dewey-sort | 3621.3815 12 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Electronic eBook |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>03761nmm a2200769zc 4500</leader><controlfield tag="001">BV043387904</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">160222s2008 |||| o||u| ||||||eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9780470751817</subfield><subfield code="9">978-0-470-75181-7</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">0470751819</subfield><subfield code="9">0-470-75181-9</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9780470751824</subfield><subfield code="c">electronic bk.</subfield><subfield code="9">978-0-470-75182-4</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">0470751827</subfield><subfield code="c">electronic bk.</subfield><subfield code="9">0-470-75182-7</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">1281322458</subfield><subfield code="9">1-281-32245-8</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9781281322456</subfield><subfield code="9">978-1-281-32245-6</subfield></datafield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1002/9780470751817</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ZDB-35-WIC)ocn214281929</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)214281929</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV043387904</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">aacr</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-861</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.3815/2</subfield><subfield code="2">22</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 3100</subfield><subfield code="0">(DE-625)146372:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Feenstra, Randall M.</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Porous silicon carbide and gallium nitride</subfield><subfield code="b">epitaxy, catalysis, and biotechnology applications</subfield><subfield code="c">Randall M. Feenstra, Colin E.C. Wood</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Chichester, England</subfield><subfield code="b">John Wiley & Sons</subfield><subfield code="c">©2008</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 Online-Ressource (xiv, 318 pages, [6] pages of plates)</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Includes bibliographical references (pages 308-310) and index</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications presents the state-of-the-art in knowledge and applications of porous semiconductor materials having a wide band gap. This comprehensive reference begins¡with an overview of porous wide-band-gap technology, and describes the¡underlying scientific basis for each application area.¡Additional chapters cover preparation, characterization, and topography; processing porous SiC; medical applications; magnetic ion behavior, and many more</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Gallium nitride</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductors</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Silicon carbide</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">TECHNOLOGY & ENGINEERING / Electronics / Solid State</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">TECHNOLOGY & ENGINEERING / Electronics / Semiconductors</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Gallium nitride</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Semiconductors</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Silicon carbide</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Silicon carbide</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Gallium nitride</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductors</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleitertechnologie</subfield><subfield code="0">(DE-588)4158814-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Membran</subfield><subfield code="0">(DE-588)4038571-1</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Siliciumcarbid</subfield><subfield code="0">(DE-588)4055009-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Galliumnitrid</subfield><subfield code="0">(DE-588)4375592-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Siliciumcarbid</subfield><subfield code="0">(DE-588)4055009-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Galliumnitrid</subfield><subfield code="0">(DE-588)4375592-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">Halbleitertechnologie</subfield><subfield code="0">(DE-588)4158814-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="8">1\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Siliciumcarbid</subfield><subfield code="0">(DE-588)4055009-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="1"><subfield code="a">Membran</subfield><subfield code="0">(DE-588)4038571-1</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="8">2\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Wood, Colin E. C.</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="776" ind1="0" ind2="8"><subfield code="i">Erscheint auch als</subfield><subfield code="n">Druck-Ausgabe, Hardcover</subfield><subfield code="z">0-470-51752-2</subfield></datafield><datafield tag="776" ind1="0" ind2="8"><subfield code="i">Erscheint auch als</subfield><subfield code="n">Druck-Ausgabe, Hardcover</subfield><subfield code="z">978-0-470-51752-9</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://onlinelibrary.wiley.com/doi/book/10.1002/9780470751817</subfield><subfield code="x">Verlag</subfield><subfield code="z">URL des Erstveröffentlichers</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-35-WIC</subfield></datafield><datafield tag="940" ind1="1" ind2=" "><subfield code="q">UBG_PDA_WIC</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-028806488</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">2\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://onlinelibrary.wiley.com/doi/book/10.1002/9780470751817</subfield><subfield code="l">FRO01</subfield><subfield code="p">ZDB-35-WIC</subfield><subfield code="q">FRO_PDA_WIC</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://onlinelibrary.wiley.com/doi/book/10.1002/9780470751817</subfield><subfield code="l">UBG01</subfield><subfield code="p">ZDB-35-WIC</subfield><subfield code="q">UBG_PDA_WIC</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield></record></collection> |
| id | DE-604.BV043387904 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T07:24:34Z |
| institution | BVB |
| isbn | 9780470751817 0470751819 9780470751824 0470751827 1281322458 9781281322456 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-028806488 |
| oclc_num | 214281929 |
| open_access_boolean | |
| owner | DE-861 |
| owner_facet | DE-861 |
| physical | 1 Online-Ressource (xiv, 318 pages, [6] pages of plates) |
| psigel | ZDB-35-WIC UBG_PDA_WIC ZDB-35-WIC FRO_PDA_WIC ZDB-35-WIC UBG_PDA_WIC |
| publishDate | 2008 |
| publishDateSearch | 2008 |
| publishDateSort | 2008 |
| publisher | John Wiley & Sons |
| record_format | marc |
| spelling | Feenstra, Randall M. Verfasser aut Porous silicon carbide and gallium nitride epitaxy, catalysis, and biotechnology applications Randall M. Feenstra, Colin E.C. Wood Chichester, England John Wiley & Sons ©2008 1 Online-Ressource (xiv, 318 pages, [6] pages of plates) txt rdacontent c rdamedia cr rdacarrier Includes bibliographical references (pages 308-310) and index Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications presents the state-of-the-art in knowledge and applications of porous semiconductor materials having a wide band gap. This comprehensive reference begins¡with an overview of porous wide-band-gap technology, and describes the¡underlying scientific basis for each application area.¡Additional chapters cover preparation, characterization, and topography; processing porous SiC; medical applications; magnetic ion behavior, and many more Gallium nitride Semiconductors Silicon carbide TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh Gallium nitride fast Semiconductors fast Silicon carbide fast Halbleitertechnologie (DE-588)4158814-9 gnd rswk-swf Membran (DE-588)4038571-1 gnd rswk-swf Siliciumcarbid (DE-588)4055009-6 gnd rswk-swf Galliumnitrid (DE-588)4375592-6 gnd rswk-swf Siliciumcarbid (DE-588)4055009-6 s Galliumnitrid (DE-588)4375592-6 s Halbleitertechnologie (DE-588)4158814-9 s 1\p DE-604 Membran (DE-588)4038571-1 s 2\p DE-604 Wood, Colin E. C. Sonstige oth Erscheint auch als Druck-Ausgabe, Hardcover 0-470-51752-2 Erscheint auch als Druck-Ausgabe, Hardcover 978-0-470-51752-9 https://onlinelibrary.wiley.com/doi/book/10.1002/9780470751817 Verlag URL des Erstveröffentlichers Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Feenstra, Randall M. Porous silicon carbide and gallium nitride epitaxy, catalysis, and biotechnology applications Gallium nitride Semiconductors Silicon carbide TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh Gallium nitride fast Semiconductors fast Silicon carbide fast Halbleitertechnologie (DE-588)4158814-9 gnd Membran (DE-588)4038571-1 gnd Siliciumcarbid (DE-588)4055009-6 gnd Galliumnitrid (DE-588)4375592-6 gnd |
| subject_GND | (DE-588)4158814-9 (DE-588)4038571-1 (DE-588)4055009-6 (DE-588)4375592-6 |
| title | Porous silicon carbide and gallium nitride epitaxy, catalysis, and biotechnology applications |
| title_auth | Porous silicon carbide and gallium nitride epitaxy, catalysis, and biotechnology applications |
| title_exact_search | Porous silicon carbide and gallium nitride epitaxy, catalysis, and biotechnology applications |
| title_full | Porous silicon carbide and gallium nitride epitaxy, catalysis, and biotechnology applications Randall M. Feenstra, Colin E.C. Wood |
| title_fullStr | Porous silicon carbide and gallium nitride epitaxy, catalysis, and biotechnology applications Randall M. Feenstra, Colin E.C. Wood |
| title_full_unstemmed | Porous silicon carbide and gallium nitride epitaxy, catalysis, and biotechnology applications Randall M. Feenstra, Colin E.C. Wood |
| title_short | Porous silicon carbide and gallium nitride |
| title_sort | porous silicon carbide and gallium nitride epitaxy catalysis and biotechnology applications |
| title_sub | epitaxy, catalysis, and biotechnology applications |
| topic | Gallium nitride Semiconductors Silicon carbide TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh Gallium nitride fast Semiconductors fast Silicon carbide fast Halbleitertechnologie (DE-588)4158814-9 gnd Membran (DE-588)4038571-1 gnd Siliciumcarbid (DE-588)4055009-6 gnd Galliumnitrid (DE-588)4375592-6 gnd |
| topic_facet | Gallium nitride Semiconductors Silicon carbide TECHNOLOGY & ENGINEERING / Electronics / Solid State TECHNOLOGY & ENGINEERING / Electronics / Semiconductors Halbleitertechnologie Membran Siliciumcarbid Galliumnitrid |
| url | https://onlinelibrary.wiley.com/doi/book/10.1002/9780470751817 |
| work_keys_str_mv | AT feenstrarandallm poroussiliconcarbideandgalliumnitrideepitaxycatalysisandbiotechnologyapplications AT woodcolinec poroussiliconcarbideandgalliumnitrideepitaxycatalysisandbiotechnologyapplications |