Insulated gate bipolar transistor (IGBT): theory and design
Saved in:
| Main Author: | |
|---|---|
| Format: | Electronic eBook |
| Language: | English |
| Published: |
Piscataway, NJ
IEEE Press
© 2003
|
| Subjects: | |
| Online Access: | FRO01 UBG01 UER01 FHI01 FHN01 Volltext |
| Item Description: | Includes bibliographical references and index "Insulated Gate Bipolar Transistors (IGBT): Theory and Design covers basic theory and design aspects of IGBTs, including the selection of silicon, achieving targeted specifications through device and process design, and device packaging. After laying the groundwork in MOS and bipolar disciplines, the author constructs the foundation of power device physics necessary for clearly understanding the subject matter."--Jacket |
| Physical Description: | 1 Online-Ressource (xix, 627 pages) |
| ISBN: | 9780471722915 9780471660996 |
Staff View
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| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
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| indexdate | 2024-07-10T07:24:29Z |
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| isbn | 9780471722915 9780471660996 |
| language | English |
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| physical | 1 Online-Ressource (xix, 627 pages) |
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| spelling | Khanna, Vinod Kumar 1952- Verfasser (DE-588)129277800 aut Insulated gate bipolar transistor (IGBT) theory and design Vinod Kumar Khanna IGBT Piscataway, NJ IEEE Press © 2003 1 Online-Ressource (xix, 627 pages) txt rdacontent c rdamedia cr rdacarrier Includes bibliographical references and index "Insulated Gate Bipolar Transistors (IGBT): Theory and Design covers basic theory and design aspects of IGBTs, including the selection of silicon, achieving targeted specifications through device and process design, and device packaging. After laying the groundwork in MOS and bipolar disciplines, the author constructs the foundation of power device physics necessary for clearly understanding the subject matter."--Jacket Electrical and Electronics Engineering TECHNOLOGY & ENGINEERING / Electronics / Transistors bisacsh Insulated gate bipolar transistors fast Insulated gate bipolar transistors IGBT (DE-588)4273802-7 gnd rswk-swf IGBT (DE-588)4273802-7 s 1\p DE-604 Erscheint auch als Druck-Ausgabe 978-0-471-23845-4 https://onlinelibrary.wiley.com/doi/book/10.1002/047172291X Verlag URL des Erstveröffentlichers Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Khanna, Vinod Kumar 1952- Insulated gate bipolar transistor (IGBT) theory and design Electrical and Electronics Engineering TECHNOLOGY & ENGINEERING / Electronics / Transistors bisacsh Insulated gate bipolar transistors fast Insulated gate bipolar transistors IGBT (DE-588)4273802-7 gnd |
| subject_GND | (DE-588)4273802-7 |
| title | Insulated gate bipolar transistor (IGBT) theory and design |
| title_alt | IGBT |
| title_auth | Insulated gate bipolar transistor (IGBT) theory and design |
| title_exact_search | Insulated gate bipolar transistor (IGBT) theory and design |
| title_full | Insulated gate bipolar transistor (IGBT) theory and design Vinod Kumar Khanna |
| title_fullStr | Insulated gate bipolar transistor (IGBT) theory and design Vinod Kumar Khanna |
| title_full_unstemmed | Insulated gate bipolar transistor (IGBT) theory and design Vinod Kumar Khanna |
| title_short | Insulated gate bipolar transistor (IGBT) |
| title_sort | insulated gate bipolar transistor igbt theory and design |
| title_sub | theory and design |
| topic | Electrical and Electronics Engineering TECHNOLOGY & ENGINEERING / Electronics / Transistors bisacsh Insulated gate bipolar transistors fast Insulated gate bipolar transistors IGBT (DE-588)4273802-7 gnd |
| topic_facet | Electrical and Electronics Engineering TECHNOLOGY & ENGINEERING / Electronics / Transistors Insulated gate bipolar transistors IGBT |
| url | https://onlinelibrary.wiley.com/doi/book/10.1002/047172291X |
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