Holdings: Resistive switching

Resistive switching: from fundamentals of nanoionic redox processes to memristive device applications

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Bibliographic Details
Other Authors:	Ielmini, Daniele 1970- (Editor), Waser, Rainer 1955- (Editor)
Format:	Book
Language:	English
Published:	Weinheim Wiley-VCH Verlag GmbH & Co. KGaA [2016]
Subjects:	Memory-Effekt RAM Nichtflüchtiger Speicher Resistives Schalten Schaltelement
Item Description:	Index Seite 731-755
Physical Description:	XXVIII, 755 Seiten Illustrationen, Diagramme (überwiegend farbig)
ISBN:	9783527334179 9783527680870

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MARC


LEADER	00000nam a2200000 c 4500
001	BV043335701
003	DE-604
005	20170215
007	t
008	160202s2016 a\|\|\| \|\|\|\| 00\|\|\| eng d
020			\|a 9783527334179 \|c hbk. \|9 978-3-527-33417-9
020			\|a 9783527680870 \|c oBook \|9 978-3-527-68087-0
035			\|a (OCoLC)946545198
035			\|a (DE-599)BVBBV043335701
040			\|a DE-604 \|b ger \|e rda
041	0		\|a eng
049			\|a DE-29T \|a DE-11 \|a DE-M347 \|a DE-703
084			\|a ZN 4900 \|0 (DE-625)157417: \|2 rvk
084			\|a ZN 5370 \|0 (DE-625)157451: \|2 rvk
245	1	0	\|a Resistive switching \|b from fundamentals of nanoionic redox processes to memristive device applications \|c edited by Daniele Ielmini and Rainer Waser
264		1	\|a Weinheim \|b Wiley-VCH Verlag GmbH & Co. KGaA \|c [2016]
264		4	\|c © 2016
300			\|a XXVIII, 755 Seiten \|b Illustrationen, Diagramme (überwiegend farbig)
336			\|b txt \|2 rdacontent
337			\|b n \|2 rdamedia
338			\|b nc \|2 rdacarrier
500			\|a Index Seite 731-755
650	0	7	\|a Memory-Effekt \|0 (DE-588)4155018-3 \|2 gnd \|9 rswk-swf
650	0	7	\|a RAM \|0 (DE-588)4176909-0 \|2 gnd \|9 rswk-swf
650	0	7	\|a Nichtflüchtiger Speicher \|0 (DE-588)4728810-3 \|2 gnd \|9 rswk-swf
650	0	7	\|a Resistives Schalten \|0 (DE-588)1072012936 \|2 gnd \|9 rswk-swf
650	0	7	\|a Schaltelement \|0 (DE-588)4179377-8 \|2 gnd \|9 rswk-swf
689	0	0	\|a Resistives Schalten \|0 (DE-588)1072012936 \|D s
689	0	1	\|a RAM \|0 (DE-588)4176909-0 \|D s
689	0	2	\|a Nichtflüchtiger Speicher \|0 (DE-588)4728810-3 \|D s
689	0		\|5 DE-604
689	1	0	\|a Schaltelement \|0 (DE-588)4179377-8 \|D s
689	1	1	\|a Memory-Effekt \|0 (DE-588)4155018-3 \|D s
689	1		\|5 DE-604
689	2	0	\|a Resistives Schalten \|0 (DE-588)1072012936 \|D s
689	2		\|5 DE-604
700	1		\|a Ielmini, Daniele \|d 1970- \|0 (DE-588)1101469609 \|4 edt
700	1		\|a Waser, Rainer \|d 1955- \|0 (DE-588)113442491 \|4 edt
776	0	8	\|i Erscheint auch als \|n Online-Ausgabe, EPUB \|z 978-3-527-68093-1
776	0	8	\|i Erscheint auch als \|n Online-Ausgabe, MOBI \|z 978-3-527-68090-0
776	0	8	\|i Erscheint auch als \|n Online-Ausgabe, PDF \|z 978-3-527-68094-8
999			\|a oai:aleph.bib-bvb.de:BVB01-028755749

Record in the Search Index

_version_	1804175883938824192
any_adam_object
author2	Ielmini, Daniele 1970- Waser, Rainer 1955-
author2_role	edt edt
author2_variant	d i di r w rw
author_GND	(DE-588)1101469609 (DE-588)113442491
author_facet	Ielmini, Daniele 1970- Waser, Rainer 1955-
building	Verbundindex
bvnumber	BV043335701
classification_rvk	ZN 4900 ZN 5370
ctrlnum	(OCoLC)946545198 (DE-599)BVBBV043335701
discipline	Elektrotechnik / Elektronik / Nachrichtentechnik
format	Book
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>02137nam a2200529 c 4500</leader><controlfield tag="001">BV043335701</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20170215 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">160202s2016 a\|\|\| \|\|\|\| 00\|\|\| eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9783527334179</subfield><subfield code="c">hbk.</subfield><subfield code="9">978-3-527-33417-9</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9783527680870</subfield><subfield code="c">oBook</subfield><subfield code="9">978-3-527-68087-0</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)946545198</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV043335701</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rda</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-29T</subfield><subfield code="a">DE-11</subfield><subfield code="a">DE-M347</subfield><subfield code="a">DE-703</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ZN 4900</subfield><subfield code="0">(DE-625)157417:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ZN 5370</subfield><subfield code="0">(DE-625)157451:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Resistive switching</subfield><subfield code="b">from fundamentals of nanoionic redox processes to memristive device applications</subfield><subfield code="c">edited by Daniele Ielmini and Rainer Waser</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Weinheim</subfield><subfield code="b">Wiley-VCH Verlag GmbH & Co. KGaA</subfield><subfield code="c">[2016]</subfield></datafield><datafield tag="264" ind1=" " ind2="4"><subfield code="c">© 2016</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">XXVIII, 755 Seiten</subfield><subfield code="b">Illustrationen, Diagramme (überwiegend farbig)</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Index Seite 731-755</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Memory-Effekt</subfield><subfield code="0">(DE-588)4155018-3</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">RAM</subfield><subfield code="0">(DE-588)4176909-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Nichtflüchtiger Speicher</subfield><subfield code="0">(DE-588)4728810-3</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Resistives Schalten</subfield><subfield code="0">(DE-588)1072012936</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Schaltelement</subfield><subfield code="0">(DE-588)4179377-8</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Resistives Schalten</subfield><subfield code="0">(DE-588)1072012936</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">RAM</subfield><subfield code="0">(DE-588)4176909-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">Nichtflüchtiger Speicher</subfield><subfield code="0">(DE-588)4728810-3</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Schaltelement</subfield><subfield code="0">(DE-588)4179377-8</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="1"><subfield code="a">Memory-Effekt</subfield><subfield code="0">(DE-588)4155018-3</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="2" ind2="0"><subfield code="a">Resistives Schalten</subfield><subfield code="0">(DE-588)1072012936</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="2" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ielmini, Daniele</subfield><subfield code="d">1970-</subfield><subfield code="0">(DE-588)1101469609</subfield><subfield code="4">edt</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Waser, Rainer</subfield><subfield code="d">1955-</subfield><subfield code="0">(DE-588)113442491</subfield><subfield code="4">edt</subfield></datafield><datafield tag="776" ind1="0" ind2="8"><subfield code="i">Erscheint auch als</subfield><subfield code="n">Online-Ausgabe, EPUB</subfield><subfield code="z">978-3-527-68093-1</subfield></datafield><datafield tag="776" ind1="0" ind2="8"><subfield code="i">Erscheint auch als</subfield><subfield code="n">Online-Ausgabe, MOBI</subfield><subfield code="z">978-3-527-68090-0</subfield></datafield><datafield tag="776" ind1="0" ind2="8"><subfield code="i">Erscheint auch als</subfield><subfield code="n">Online-Ausgabe, PDF</subfield><subfield code="z">978-3-527-68094-8</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-028755749</subfield></datafield></record></collection>
id	DE-604.BV043335701
illustrated	Illustrated
indexdate	2024-07-10T07:23:22Z
institution	BVB
isbn	9783527334179 9783527680870
language	English
oai_aleph_id	oai:aleph.bib-bvb.de:BVB01-028755749
oclc_num	946545198
open_access_boolean
owner	DE-29T DE-11 DE-M347 DE-703
owner_facet	DE-29T DE-11 DE-M347 DE-703
physical	XXVIII, 755 Seiten Illustrationen, Diagramme (überwiegend farbig)
publishDate	2016
publishDateSearch	2016
publishDateSort	2016
publisher	Wiley-VCH Verlag GmbH & Co. KGaA
record_format	marc
spelling	Resistive switching from fundamentals of nanoionic redox processes to memristive device applications edited by Daniele Ielmini and Rainer Waser Weinheim Wiley-VCH Verlag GmbH & Co. KGaA [2016] © 2016 XXVIII, 755 Seiten Illustrationen, Diagramme (überwiegend farbig) txt rdacontent n rdamedia nc rdacarrier Index Seite 731-755 Memory-Effekt (DE-588)4155018-3 gnd rswk-swf RAM (DE-588)4176909-0 gnd rswk-swf Nichtflüchtiger Speicher (DE-588)4728810-3 gnd rswk-swf Resistives Schalten (DE-588)1072012936 gnd rswk-swf Schaltelement (DE-588)4179377-8 gnd rswk-swf Resistives Schalten (DE-588)1072012936 s RAM (DE-588)4176909-0 s Nichtflüchtiger Speicher (DE-588)4728810-3 s DE-604 Schaltelement (DE-588)4179377-8 s Memory-Effekt (DE-588)4155018-3 s Ielmini, Daniele 1970- (DE-588)1101469609 edt Waser, Rainer 1955- (DE-588)113442491 edt Erscheint auch als Online-Ausgabe, EPUB 978-3-527-68093-1 Erscheint auch als Online-Ausgabe, MOBI 978-3-527-68090-0 Erscheint auch als Online-Ausgabe, PDF 978-3-527-68094-8
spellingShingle	Resistive switching from fundamentals of nanoionic redox processes to memristive device applications Memory-Effekt (DE-588)4155018-3 gnd RAM (DE-588)4176909-0 gnd Nichtflüchtiger Speicher (DE-588)4728810-3 gnd Resistives Schalten (DE-588)1072012936 gnd Schaltelement (DE-588)4179377-8 gnd
subject_GND	(DE-588)4155018-3 (DE-588)4176909-0 (DE-588)4728810-3 (DE-588)1072012936 (DE-588)4179377-8
title	Resistive switching from fundamentals of nanoionic redox processes to memristive device applications
title_auth	Resistive switching from fundamentals of nanoionic redox processes to memristive device applications
title_exact_search	Resistive switching from fundamentals of nanoionic redox processes to memristive device applications
title_full	Resistive switching from fundamentals of nanoionic redox processes to memristive device applications edited by Daniele Ielmini and Rainer Waser
title_fullStr	Resistive switching from fundamentals of nanoionic redox processes to memristive device applications edited by Daniele Ielmini and Rainer Waser
title_full_unstemmed	Resistive switching from fundamentals of nanoionic redox processes to memristive device applications edited by Daniele Ielmini and Rainer Waser
title_short	Resistive switching
title_sort	resistive switching from fundamentals of nanoionic redox processes to memristive device applications
title_sub	from fundamentals of nanoionic redox processes to memristive device applications
topic	Memory-Effekt (DE-588)4155018-3 gnd RAM (DE-588)4176909-0 gnd Nichtflüchtiger Speicher (DE-588)4728810-3 gnd Resistives Schalten (DE-588)1072012936 gnd Schaltelement (DE-588)4179377-8 gnd
topic_facet	Memory-Effekt RAM Nichtflüchtiger Speicher Resistives Schalten Schaltelement
work_keys_str_mv	AT ielminidaniele resistiveswitchingfromfundamentalsofnanoionicredoxprocessestomemristivedeviceapplications AT waserrainer resistiveswitchingfromfundamentalsofnanoionicredoxprocessestomemristivedeviceapplications

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