The IGBT Device: Physics, Design and Applications of the Insulated Gate Bipolar Transistor
Saved in:
| Main Author: | |
|---|---|
| Format: | Electronic eBook |
| Language: | English |
| Published: |
Kidlington, Oxford
William Andrew
2015
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| Subjects: | |
| Online Access: | Volltext |
| Item Description: | Includes bibliographical references and index The IGBT device has proved to be a highly important Power Semiconductor, providing the basis for adjustable speed motor drives (used in air conditioning and refrigeration and railway locomotives), electronic ignition systems for gasolinepowered motor vehicles and energy-saving compact fluorescent light bulbs. Recent applications include plasma displays (flat-screen TVs) and electric power transmission systems, alternative energy systems and energy storage. This book is the first available to cover the applications of the IGBT, and provide the essential information needed by applications engineers to design new products using the device, in sectors including consumer, industrial, lighting, transportation, medical and renewable energy. The author, B. Jayant Baliga, invented the IGBT in 1980 while working for GE. His book will unlock IGBT for a new generation of engineering applications, making it essential reading for a wide audience of electrical engineers and design engineers, as well as an important publication for semiconductor specialists |
| Physical Description: | 1 Online-Ressource |
| ISBN: | 9781455731534 1455731536 9781455731435 |
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| illustrated | Not Illustrated |
| indexdate | 2024-07-10T07:20:47Z |
| institution | BVB |
| isbn | 9781455731534 1455731536 9781455731435 |
| language | English |
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| physical | 1 Online-Ressource |
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| publishDate | 2015 |
| publishDateSearch | 2015 |
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| publisher | William Andrew |
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| spelling | Baliga, B. Jayant Verfasser aut The IGBT Device Physics, Design and Applications of the Insulated Gate Bipolar Transistor B. Jayant Baliga Kidlington, Oxford William Andrew 2015 1 Online-Ressource txt rdacontent c rdamedia cr rdacarrier Includes bibliographical references and index The IGBT device has proved to be a highly important Power Semiconductor, providing the basis for adjustable speed motor drives (used in air conditioning and refrigeration and railway locomotives), electronic ignition systems for gasolinepowered motor vehicles and energy-saving compact fluorescent light bulbs. Recent applications include plasma displays (flat-screen TVs) and electric power transmission systems, alternative energy systems and energy storage. This book is the first available to cover the applications of the IGBT, and provide the essential information needed by applications engineers to design new products using the device, in sectors including consumer, industrial, lighting, transportation, medical and renewable energy. The author, B. Jayant Baliga, invented the IGBT in 1980 while working for GE. His book will unlock IGBT for a new generation of engineering applications, making it essential reading for a wide audience of electrical engineers and design engineers, as well as an important publication for semiconductor specialists TECHNOLOGY & ENGINEERING / Mechanical bisacsh Bipolar transistor Power electronics Power semiconductors Insulated gate bipolar transistors fast Insulated gate bipolar transistors Leistungshalbleiter (DE-588)4167286-0 gnd rswk-swf IGBT (DE-588)4273802-7 gnd rswk-swf Leistungshalbleiter (DE-588)4167286-0 s 1\p DE-604 IGBT (DE-588)4273802-7 s 2\p DE-604 http://www.sciencedirect.com/science/book/9781455731435 Verlag Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Baliga, B. Jayant The IGBT Device Physics, Design and Applications of the Insulated Gate Bipolar Transistor TECHNOLOGY & ENGINEERING / Mechanical bisacsh Bipolar transistor Power electronics Power semiconductors Insulated gate bipolar transistors fast Insulated gate bipolar transistors Leistungshalbleiter (DE-588)4167286-0 gnd IGBT (DE-588)4273802-7 gnd |
| subject_GND | (DE-588)4167286-0 (DE-588)4273802-7 |
| title | The IGBT Device Physics, Design and Applications of the Insulated Gate Bipolar Transistor |
| title_auth | The IGBT Device Physics, Design and Applications of the Insulated Gate Bipolar Transistor |
| title_exact_search | The IGBT Device Physics, Design and Applications of the Insulated Gate Bipolar Transistor |
| title_full | The IGBT Device Physics, Design and Applications of the Insulated Gate Bipolar Transistor B. Jayant Baliga |
| title_fullStr | The IGBT Device Physics, Design and Applications of the Insulated Gate Bipolar Transistor B. Jayant Baliga |
| title_full_unstemmed | The IGBT Device Physics, Design and Applications of the Insulated Gate Bipolar Transistor B. Jayant Baliga |
| title_short | The IGBT Device |
| title_sort | the igbt device physics design and applications of the insulated gate bipolar transistor |
| title_sub | Physics, Design and Applications of the Insulated Gate Bipolar Transistor |
| topic | TECHNOLOGY & ENGINEERING / Mechanical bisacsh Bipolar transistor Power electronics Power semiconductors Insulated gate bipolar transistors fast Insulated gate bipolar transistors Leistungshalbleiter (DE-588)4167286-0 gnd IGBT (DE-588)4273802-7 gnd |
| topic_facet | TECHNOLOGY & ENGINEERING / Mechanical Bipolar transistor Power electronics Power semiconductors Insulated gate bipolar transistors Leistungshalbleiter IGBT |
| url | http://www.sciencedirect.com/science/book/9781455731435 |
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