Advances in semiconductor lasers and applications to optoelectronics (World Scientific, 2000)
Includes bibliographical references
Tunnel injection lasers - P. Bhattacharya -- - Quantum well intersubband lasers - J.P. Sun ... [et al.] -- - Advances in measurements of physical parameters of semiconductor lasers - G.E. Shtengel ... [et al.] -- - Lateral injection lasers - E.H. Sargent and J.M. Xu -- - Extended wavelength (1.0 to 1.3 um)InGaAs/GaAs quantum dot GaAs-based vertical-cavity surface-emitting and lateral-cavity edge-emitting lasers / dr D.G. Deppe and D.L. Huffaker -- - GaN-based laser diodes - M. Razeghi -- - Quantum-dot semiconductor lasers - P. Bhattacharya -- - Device characteristics of low-threshold quantum-dot lasers - A.E. Zhukov, V.M. Ustinov, and Z.I. Alferov -- - Nitride lasers: optical gain and devise implications - A.V. Nurmikko and Y.K. Song -- - Advanced concepts in intersubband unipolar lasers - J.P. Leburton, F.H. Julien, and Y. Lyanda-Geller -- - Optoelectronic properties of strained wurtzite GaN quantum-well lasers - J. Wang ... [et al.] -- - Carrier capture in semiconductor quantum well lasers: a quantum transport analysis - L.F. Register -- - Quantum state engieering based on electromagnetic analogies and numerical methods for semiconductor intersubband lasers - E. Anemogiannis, E.N. Glytsis, and T.K. Gaylord -- - Advanced semiconductor lasers: phonon engineering and phonon interactions - M. Dutta and M.A. Stroscio