High performance devices proceedings of the 2004 IEEE Lester Eastman Conference on High Performance Devices, Rensselaer Polytechnic Institute, 4-6 August 2004 (World Scientific, 2005)
Includes bibliographical references and index
Preface; Organizing Committee; Conference Program; CONTENTS; Vertical Scaling of Type I InP HBT with FT > 500 GHz J. W. Lai, W. Hafez and M. Feng; Numerical Investigation of the Effect of Doping Profiles on the High Frequency Performance of InP/InGaAs Super Scaled HBTs D. Veksler, M. S. Shur, V. E. Houtsma, N. G. We.ima.nn and Y. K. Chen; Tunnel Diode/Transistor Differential Comparator Q. Liu, S. Sutar and A. Seabaugh; Benchmark Results for High-Speed 4-Bit Accumulators Implemented in Indium Phosphide DHBT Technology S. E. Turner and D. E. Kotecki
This volume presents state-of-the-art works from top academic and research institutions in the areas of high performance semiconductor materials, devices, and circuits. A broad coverage of topics relating to high performance devices and circuits is featured here. There are 46 contributed papers covering a wide range of materials, device types, and applications. These papers describe the results of ongoing research in three general areas: high speed technologies for advanced mixed signal and terahertz applications, advanced technologies for high performance optical links and light sources, and