Breakdown phenomena in semiconductors and semiconductor devices:
Saved in:
| Main Author: | |
|---|---|
| Format: | Electronic eBook |
| Language: | English |
| Published: |
New Jersey
World Scientific
c2005
|
| Series: | Selected topics in electronics and systems
v. 36 |
| Subjects: | |
| Online Access: | FAW01 FAW02 Volltext |
| Item Description: | Includes bibliographical references and indexes Preface; Contents; Chapter 1 Introductory Chapter; Chapter 2 Avalanche Multiplication; Chapter 3 Static Avalanche Breakdown; Chapter 4 Avalanche Injection; Chapter 5 Dynamic Breakdown; Conclusion; List of Symbols; Bibliography; Index; AUTHOR INDEX Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdown conditions. Consequently, an acquaintance with breakdown phenomena is essential for scientists or engineers dealing with semiconductor devices. The aim of this book is to summarize the main experi |
| Physical Description: | 1 Online-Ressource (xiii, 208 p.) |
| ISBN: | 9789812563958 9789812703330 9812563954 9812703330 |
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| 245 | 1 | 0 | |a Breakdown phenomena in semiconductors and semiconductor devices |c Michael Levinshtein, Juha Kostamovaara, Sergey Vainshtein |
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| author | Levinshteĭn, M. E., (Mikhail Efimovich) |
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| spelling | Levinshteĭn, M. E., (Mikhail Efimovich) Verfasser aut Breakdown phenomena in semiconductors and semiconductor devices Michael Levinshtein, Juha Kostamovaara, Sergey Vainshtein New Jersey World Scientific c2005 1 Online-Ressource (xiii, 208 p.) txt rdacontent c rdamedia cr rdacarrier Selected topics in electronics and systems v. 36 Includes bibliographical references and indexes Preface; Contents; Chapter 1 Introductory Chapter; Chapter 2 Avalanche Multiplication; Chapter 3 Static Avalanche Breakdown; Chapter 4 Avalanche Injection; Chapter 5 Dynamic Breakdown; Conclusion; List of Symbols; Bibliography; Index; AUTHOR INDEX Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdown conditions. Consequently, an acquaintance with breakdown phenomena is essential for scientists or engineers dealing with semiconductor devices. The aim of this book is to summarize the main experi TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh Breakdown (Electricity) fast High voltages fast Semiconductors fast Semiconductors Breakdown (Electricity) High voltages Halbleiterbauelement (DE-588)4113826-0 gnd rswk-swf Elektrischer Durchbruch (DE-588)4272300-0 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf 1\p (DE-588)4006432-3 Bibliografie gnd-content Halbleiterbauelement (DE-588)4113826-0 s Elektrischer Durchbruch (DE-588)4272300-0 s 2\p DE-604 Halbleiter (DE-588)4022993-2 s 3\p DE-604 Kostamovaara, Juha Sonstige oth Vainshtein, Sergey Sonstige oth http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=174564 Aggregator Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 3\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Levinshteĭn, M. E., (Mikhail Efimovich) Breakdown phenomena in semiconductors and semiconductor devices TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh Breakdown (Electricity) fast High voltages fast Semiconductors fast Semiconductors Breakdown (Electricity) High voltages Halbleiterbauelement (DE-588)4113826-0 gnd Elektrischer Durchbruch (DE-588)4272300-0 gnd Halbleiter (DE-588)4022993-2 gnd |
| subject_GND | (DE-588)4113826-0 (DE-588)4272300-0 (DE-588)4022993-2 (DE-588)4006432-3 |
| title | Breakdown phenomena in semiconductors and semiconductor devices |
| title_auth | Breakdown phenomena in semiconductors and semiconductor devices |
| title_exact_search | Breakdown phenomena in semiconductors and semiconductor devices |
| title_full | Breakdown phenomena in semiconductors and semiconductor devices Michael Levinshtein, Juha Kostamovaara, Sergey Vainshtein |
| title_fullStr | Breakdown phenomena in semiconductors and semiconductor devices Michael Levinshtein, Juha Kostamovaara, Sergey Vainshtein |
| title_full_unstemmed | Breakdown phenomena in semiconductors and semiconductor devices Michael Levinshtein, Juha Kostamovaara, Sergey Vainshtein |
| title_short | Breakdown phenomena in semiconductors and semiconductor devices |
| title_sort | breakdown phenomena in semiconductors and semiconductor devices |
| topic | TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh Breakdown (Electricity) fast High voltages fast Semiconductors fast Semiconductors Breakdown (Electricity) High voltages Halbleiterbauelement (DE-588)4113826-0 gnd Elektrischer Durchbruch (DE-588)4272300-0 gnd Halbleiter (DE-588)4022993-2 gnd |
| topic_facet | TECHNOLOGY & ENGINEERING / Electronics / Solid State TECHNOLOGY & ENGINEERING / Electronics / Semiconductors Breakdown (Electricity) High voltages Semiconductors Halbleiterbauelement Elektrischer Durchbruch Halbleiter Bibliografie |
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