Radiation defect engineering - Kozlovskiĭ, V. V., (Vitaliĭ Vasilʹevich) (World Scientific, 2005)
Reprinted from: International journal of high speed electronics and systems, v. 15, no. 1, 2005
Includes bibliographical references and index
Preface; Contents; 1 Ion-S timulated Processes; 2 Transmutation Doping of Semiconductors by Charged Particles; 3 Doping of Semiconductors Using Radiation Defects; 4 Formation of Buried Porous and Damaged Layers; References; Index
The increasing complexity of problems in semiconductor electronics and optoelectronics has exposed the insufficient potential of the technological doping processes currently used. One of the most promising techniques, which this book explores, is radiation doping: the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. The authors consider the basic principles of proton interactions with single crystal semiconductors on the basis of both theory as well as practical results. All types of proton modifications of the materials