Advanced high speed devices (World Scientific Pub. Co., 2010)
"This volume contains the proceedings of the 2008 biennial Lester Eastman Conference (LEC), which was held on the Cornell University of Delaware campus on August 5-7, 2008. Conference was known as IEEE/Cornell University Conference on High Performance Devices"--Pref
Includes bibliographical references
Simulation and experimental results on GaN based ultra-short planar negative differential conductivity diodes for THz power generation / B. Aslan, L.F. Eastman and Q. Diduck -- 5-terminal THz GaN based transistor with field- and space-charge control electrodes / G. Simin, M.S. Shur and R. Gaska -- Performance comparison of scaled III-V and Si ballistic nanowire MOSFETs / L. Wang ... [et al.] -- A room temperature ballistic deflection transistor for high performance applications / Q. Diduck, H. Irie and M. Margala -- Emission and intensity modulation of terahertz electromagnetic radiation utilizing 2-dimensional plasmons in dual-grating-gate HEMT's / T. Otsuji ... [et al.] -- Millimeter wave to terahertz in CMOS / K.K. O, S. Sankaran ... [et al.] -- The effects of increasing AlN mole fraction on the performance of AlGaN active regions containing nanometer scale compositionally inhomogeneities / A.V. Sampath ... [et al.] --
- Surface acoustic wave propagation in GaN-On-sapphire under pulsed sub-band ultraviolet illumination / V.S. Chivukula ... [et al.] -- Solar-blind single-photon 4H-SiC avalanche photodiodes / A. Vert ... [et al.] -- Monte Carlo simulations of In[symbol]Ga[symbol]As MOSFETs at 0.5 V supply voltage for high-performance CMOS / J.S. Ayubi-Moak, K. Kalna and A. Asenov -- The first 70nm 6-inch GaAs PHEMT MMIC process / H. Karimy ... [et al.] -- High-performance 50-nm metamorphic high electron-mobility transistors with high breakdown voltages / D. Xu ... [et al.] -- MBE growth and characterization of Mg-doped III-nitrides on sapphire / X. Chen ... [et al.] -- Performance of MOSFETs on reactive-ion-etched GaN surfaces / K. Tang, W. Huang, T.P. Chow -- High current density/high voltage AlGaN/GaN HFETs on sapphire / J. Shi, M. Pophristic and L.F. Eastman -- InAlN/GaN MOS-HEMT with thermally grown oxide / M. Alomari ... [et al.] --
- GaN transistors for power switching and millimeter-wave applications / T. Ueda ... [et al.] -- 4-nm AlN barrier all binary HFET with SiNx gate dielectric / T. Zimmermann ... [et al.] -- Effect of gate oxide processes on 4H-SiC MOSFETs on (000-1) oriented substrate / H. Naik, K. Tang and T.P. Chow -- Characterization and modeling of integrated diode in 1.2kV 4H-SiC vertical power MOSFET / H. Naik, Y. Wang and T.P. Chow -- Packaging and wide-pulse switching of 4 mm x 4 mm silicon carbide GTOs / H. O'Brien and M.G. Koebke -- Bi-directional scalable solid-state circuit breakers for hybrid-electric vehicles / D.P. Urciuoli and V. Veliadis