Advances in silicon carbide processing and applications:
Saved in:
| Other Authors: | |
|---|---|
| Format: | Electronic eBook |
| Language: | English |
| Published: |
Boston
Artech House
[2004]
|
| Series: | Artech House semiconductor materials and devices library
|
| Subjects: | |
| Online Access: | FAW01 FAW02 Volltext |
| Item Description: | Description based on print version record |
| Physical Description: | 1 online resource (xiii, 212 pages) illustrations |
| ISBN: | 1580537405 1580537413 9781580537407 9781580537414 |
Staff View
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| 264 | 1 | |a Boston |b Artech House |c [2004] | |
| 264 | 4 | |c © 2004 | |
| 300 | |a 1 online resource (xiii, 212 pages) |b illustrations | ||
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| 490 | 0 | |a Artech House semiconductor materials and devices library | |
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| 505 | 8 | |a Annotation Learn the latest advances in SiC (Silicon Carbide) technology from the leading experts in the field with this new cutting-edge resource. The book is your single source for in-depth information on both SiC device fabrication and system-level applications. This comprehensive reference begins with an examination of how SiC is grown and how defects in SiC growth can affect working devices. Key issues in selective doping of SiC via ion implantation are covered with special focus on implant conditions and electrical activation of implants. SiC applications discussed include chemical sensors, motor-control components, high-temperature gas sensors, and high-temperature electronics. By cutting through the arcane data and jargon surrounding the hype on SiC, this book gives an honest assessment of today's SiC technology and shows you how SiC can be adopted in developing tomorrow's applications | |
| 505 | 8 | |a 1. Silicon Carbide Overview / Olle Kordina and Stephen E. Saddow -- 2. High-Temperature SiC-FET Chemical Gas Sensors / Anita Lloyd Spetz, Shinji Nakagomi, and Susan Savage -- 3. Silicon Carbide Technology and Power Electronics Applications / C. Wesley Tipton IV and Stephen B. Bayne -- 4. Advances in Selective Doping of SiC Via Ion Implantation / A. Hallen ... [et al.] -- 5. Power SiC MOSFETS / I. Sankin and J.B. Casady -- 6. Power and RF BJTs in 4H-SiC : Device Design and Technology / Anant Agarwal, Sei-Hyung Ryu, and John Palmour | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING / Electronics / Solid State |2 bisacsh | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING / Electronics / Semiconductors |2 bisacsh | |
| 650 | 7 | |a Semiconductors |2 fast | |
| 650 | 7 | |a Silicon carbide |2 fast | |
| 650 | 7 | |a Silicon carbide |2 cct | |
| 650 | 7 | |a Semiconductors |2 cct | |
| 650 | 4 | |a Silicon carbide | |
| 650 | 4 | |a Semiconductors | |
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| 689 | 0 | |8 1\p |5 DE-604 | |
| 700 | 1 | |a Saddow, Stephen E. |4 edt | |
| 700 | 1 | |a Agarwal, Anant |e Sonstige |4 oth | |
| 776 | 0 | 8 | |i Erscheint auch als |n Druck-Ausgabe |a Advances in silicon carbide processing and applications |
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Record in the Search Index
| _version_ | 1804175403567284224 |
|---|---|
| any_adam_object | |
| author2 | Saddow, Stephen E. |
| author2_role | edt |
| author2_variant | s e s se ses |
| author_facet | Saddow, Stephen E. |
| building | Verbundindex |
| bvnumber | BV043040181 |
| collection | ZDB-4-EBA |
| contents | Annotation Learn the latest advances in SiC (Silicon Carbide) technology from the leading experts in the field with this new cutting-edge resource. The book is your single source for in-depth information on both SiC device fabrication and system-level applications. This comprehensive reference begins with an examination of how SiC is grown and how defects in SiC growth can affect working devices. Key issues in selective doping of SiC via ion implantation are covered with special focus on implant conditions and electrical activation of implants. SiC applications discussed include chemical sensors, motor-control components, high-temperature gas sensors, and high-temperature electronics. By cutting through the arcane data and jargon surrounding the hype on SiC, this book gives an honest assessment of today's SiC technology and shows you how SiC can be adopted in developing tomorrow's applications 1. Silicon Carbide Overview / Olle Kordina and Stephen E. Saddow -- 2. High-Temperature SiC-FET Chemical Gas Sensors / Anita Lloyd Spetz, Shinji Nakagomi, and Susan Savage -- 3. Silicon Carbide Technology and Power Electronics Applications / C. Wesley Tipton IV and Stephen B. Bayne -- 4. Advances in Selective Doping of SiC Via Ion Implantation / A. Hallen ... [et al.] -- 5. Power SiC MOSFETS / I. Sankin and J.B. Casady -- 6. Power and RF BJTs in 4H-SiC : Device Design and Technology / Anant Agarwal, Sei-Hyung Ryu, and John Palmour |
| ctrlnum | (OCoLC)56123954 (DE-599)BVBBV043040181 |
| dewey-full | 621.3815/2 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815/2 |
| dewey-search | 621.3815/2 |
| dewey-sort | 3621.3815 12 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Electronic eBook |
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| id | DE-604.BV043040181 |
| illustrated | Illustrated |
| indexdate | 2024-07-10T07:15:44Z |
| institution | BVB |
| isbn | 1580537405 1580537413 9781580537407 9781580537414 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-028464828 |
| oclc_num | 56123954 |
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| owner | DE-1046 DE-1047 |
| owner_facet | DE-1046 DE-1047 |
| physical | 1 online resource (xiii, 212 pages) illustrations |
| psigel | ZDB-4-EBA ZDB-4-EBA FAW_PDA_EBA |
| publishDate | 2004 |
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| spelling | Advances in silicon carbide processing and applications Stephen E. Saddow, Anant Agarwal, editors Boston Artech House [2004] © 2004 1 online resource (xiii, 212 pages) illustrations txt rdacontent c rdamedia cr rdacarrier Artech House semiconductor materials and devices library Description based on print version record Annotation Learn the latest advances in SiC (Silicon Carbide) technology from the leading experts in the field with this new cutting-edge resource. The book is your single source for in-depth information on both SiC device fabrication and system-level applications. This comprehensive reference begins with an examination of how SiC is grown and how defects in SiC growth can affect working devices. Key issues in selective doping of SiC via ion implantation are covered with special focus on implant conditions and electrical activation of implants. SiC applications discussed include chemical sensors, motor-control components, high-temperature gas sensors, and high-temperature electronics. By cutting through the arcane data and jargon surrounding the hype on SiC, this book gives an honest assessment of today's SiC technology and shows you how SiC can be adopted in developing tomorrow's applications 1. Silicon Carbide Overview / Olle Kordina and Stephen E. Saddow -- 2. High-Temperature SiC-FET Chemical Gas Sensors / Anita Lloyd Spetz, Shinji Nakagomi, and Susan Savage -- 3. Silicon Carbide Technology and Power Electronics Applications / C. Wesley Tipton IV and Stephen B. Bayne -- 4. Advances in Selective Doping of SiC Via Ion Implantation / A. Hallen ... [et al.] -- 5. Power SiC MOSFETS / I. Sankin and J.B. Casady -- 6. Power and RF BJTs in 4H-SiC : Device Design and Technology / Anant Agarwal, Sei-Hyung Ryu, and John Palmour TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh Semiconductors fast Silicon carbide fast Silicon carbide cct Semiconductors cct Silicon carbide Semiconductors Siliciumcarbid (DE-588)4055009-6 gnd rswk-swf Siliciumcarbid (DE-588)4055009-6 s 1\p DE-604 Saddow, Stephen E. edt Agarwal, Anant Sonstige oth Erscheint auch als Druck-Ausgabe Advances in silicon carbide processing and applications http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=113805 Aggregator Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Advances in silicon carbide processing and applications Annotation Learn the latest advances in SiC (Silicon Carbide) technology from the leading experts in the field with this new cutting-edge resource. The book is your single source for in-depth information on both SiC device fabrication and system-level applications. This comprehensive reference begins with an examination of how SiC is grown and how defects in SiC growth can affect working devices. Key issues in selective doping of SiC via ion implantation are covered with special focus on implant conditions and electrical activation of implants. SiC applications discussed include chemical sensors, motor-control components, high-temperature gas sensors, and high-temperature electronics. By cutting through the arcane data and jargon surrounding the hype on SiC, this book gives an honest assessment of today's SiC technology and shows you how SiC can be adopted in developing tomorrow's applications 1. Silicon Carbide Overview / Olle Kordina and Stephen E. Saddow -- 2. High-Temperature SiC-FET Chemical Gas Sensors / Anita Lloyd Spetz, Shinji Nakagomi, and Susan Savage -- 3. Silicon Carbide Technology and Power Electronics Applications / C. Wesley Tipton IV and Stephen B. Bayne -- 4. Advances in Selective Doping of SiC Via Ion Implantation / A. Hallen ... [et al.] -- 5. Power SiC MOSFETS / I. Sankin and J.B. Casady -- 6. Power and RF BJTs in 4H-SiC : Device Design and Technology / Anant Agarwal, Sei-Hyung Ryu, and John Palmour TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh Semiconductors fast Silicon carbide fast Silicon carbide cct Semiconductors cct Silicon carbide Semiconductors Siliciumcarbid (DE-588)4055009-6 gnd |
| subject_GND | (DE-588)4055009-6 |
| title | Advances in silicon carbide processing and applications |
| title_auth | Advances in silicon carbide processing and applications |
| title_exact_search | Advances in silicon carbide processing and applications |
| title_full | Advances in silicon carbide processing and applications Stephen E. Saddow, Anant Agarwal, editors |
| title_fullStr | Advances in silicon carbide processing and applications Stephen E. Saddow, Anant Agarwal, editors |
| title_full_unstemmed | Advances in silicon carbide processing and applications Stephen E. Saddow, Anant Agarwal, editors |
| title_short | Advances in silicon carbide processing and applications |
| title_sort | advances in silicon carbide processing and applications |
| topic | TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh Semiconductors fast Silicon carbide fast Silicon carbide cct Semiconductors cct Silicon carbide Semiconductors Siliciumcarbid (DE-588)4055009-6 gnd |
| topic_facet | TECHNOLOGY & ENGINEERING / Electronics / Solid State TECHNOLOGY & ENGINEERING / Electronics / Semiconductors Semiconductors Silicon carbide Siliciumcarbid |
| url | http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=113805 |
| work_keys_str_mv | AT saddowstephene advancesinsiliconcarbideprocessingandapplications AT agarwalanant advancesinsiliconcarbideprocessingandapplications |