Defects and diffusion in semiconductors: an annual retrospective XIV
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| Other Authors: | |
|---|---|
| Format: | Electronic eBook |
| Language: | English |
| Published: |
Durnten-Zurich
TTP
[2012]
|
| Series: | Diffusion and defect data
v. 332 |
| Subjects: | |
| Online Access: | FAW01 FAW02 Volltext |
| Item Description: | Includes abstracts of papers published in scientific literature Print version record |
| Physical Description: | 1 online resource (vii, 243 pages) illustrations (black and white) |
| ISBN: | 3038139866 9783038139867 |
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MARC
| LEADER | 00000nmm a2200000zcb4500 | ||
|---|---|---|---|
| 001 | BV043032121 | ||
| 003 | DE-604 | ||
| 005 | 00000000000000.0 | ||
| 007 | cr|uuu---uuuuu | ||
| 008 | 151120s2012 |||| o||u| ||||||eng d | ||
| 020 | |a 3038139866 |9 3-03813-986-6 | ||
| 020 | |a 9783038139867 |9 978-3-03813-986-7 | ||
| 035 | |a (OCoLC)838102048 | ||
| 035 | |a (DE-599)BVBBV043032121 | ||
| 040 | |a DE-604 |b ger |e rda | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-1046 |a DE-1047 | ||
| 082 | 0 | |a 621.38152 |2 23 | |
| 130 | 0 | |a Defects and diffusion in semiconductors (Annual retrospective XIV) | |
| 245 | 1 | 0 | |a Defects and diffusion in semiconductors |b an annual retrospective XIV |c edited by D.J. Fisher |
| 246 | 1 | 3 | |a Defects and diffusion in semiconductors XIV |
| 264 | 1 | |a Durnten-Zurich |b TTP |c [2012] | |
| 300 | |a 1 online resource (vii, 243 pages) |b illustrations (black and white) | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b c |2 rdamedia | ||
| 338 | |b cr |2 rdacarrier | ||
| 490 | 0 | |a Diffusion and defect data |v v. 332 | |
| 500 | |a Includes abstracts of papers published in scientific literature | ||
| 500 | |a Print version record | ||
| 505 | 8 | |a A study was made of the diffusion of Al in AlAs/GaAs distributed Bragg-reflectors using the high angle annular dark field scanning transmission electron microscopy intensity. The measured intensity was normalized to the intensity of the incoming electron beam using a detector scan. The normalized intensity could be directly compared with a set of frozen lattice simulations yielding specimen thickness in regions with known composition or concentration in regions with known thickness. The thickness was evaluated both from GaAs and AlAs regions yielding that the specimen was about 15nm thinner in AlAs regions due to oxidation. For the concentration evaluation the thickness was derived from GaAs regions and concentrations up to 1.2 were found due to the overestimated thickness. Concentration profiles were scaled down to 1.0 and fitted to the solution of Fick's laws Temporary description, more details to follow | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING / Electronics / Semiconductors |2 bisacsh | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING / Electronics / Solid State |2 bisacsh | |
| 650 | 7 | |a Semiconductors / Defects |2 fast | |
| 650 | 7 | |a Semiconductors / Diffusion |2 fast | |
| 650 | 4 | |a Semiconductors |x Defects | |
| 650 | 4 | |a Semiconductors |x Diffusion | |
| 700 | 1 | |a Fisher, D. J. |4 edt | |
| 776 | 0 | 8 | |i Erscheint auch als |n Druck-Ausgabe |a Defects and diffusion in semiconductors |
| 856 | 4 | 0 | |u http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=517432 |x Aggregator |3 Volltext |
| 912 | |a ZDB-4-EBA | ||
| 999 | |a oai:aleph.bib-bvb.de:BVB01-028456772 | ||
| 966 | e | |u http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=517432 |l FAW01 |p ZDB-4-EBA |q FAW_PDA_EBA |x Aggregator |3 Volltext | |
| 966 | e | |u http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=517432 |l FAW02 |p ZDB-4-EBA |q FAW_PDA_EBA |x Aggregator |3 Volltext | |
Record in the Search Index
| _version_ | 1804175389107421184 |
|---|---|
| any_adam_object | |
| author2 | Fisher, D. J. |
| author2_role | edt |
| author2_variant | d j f dj djf |
| author_facet | Fisher, D. J. |
| building | Verbundindex |
| bvnumber | BV043032121 |
| collection | ZDB-4-EBA |
| contents | A study was made of the diffusion of Al in AlAs/GaAs distributed Bragg-reflectors using the high angle annular dark field scanning transmission electron microscopy intensity. The measured intensity was normalized to the intensity of the incoming electron beam using a detector scan. The normalized intensity could be directly compared with a set of frozen lattice simulations yielding specimen thickness in regions with known composition or concentration in regions with known thickness. The thickness was evaluated both from GaAs and AlAs regions yielding that the specimen was about 15nm thinner in AlAs regions due to oxidation. For the concentration evaluation the thickness was derived from GaAs regions and concentrations up to 1.2 were found due to the overestimated thickness. Concentration profiles were scaled down to 1.0 and fitted to the solution of Fick's laws Temporary description, more details to follow |
| ctrlnum | (OCoLC)838102048 (DE-599)BVBBV043032121 |
| dewey-full | 621.38152 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.38152 |
| dewey-search | 621.38152 |
| dewey-sort | 3621.38152 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Electronic eBook |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>03018nmm a2200481zcb4500</leader><controlfield tag="001">BV043032121</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">151120s2012 |||| o||u| ||||||eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">3038139866</subfield><subfield code="9">3-03813-986-6</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9783038139867</subfield><subfield code="9">978-3-03813-986-7</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)838102048</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV043032121</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rda</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-1046</subfield><subfield code="a">DE-1047</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.38152</subfield><subfield code="2">23</subfield></datafield><datafield tag="130" ind1="0" ind2=" "><subfield code="a">Defects and diffusion in semiconductors (Annual retrospective XIV)</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Defects and diffusion in semiconductors</subfield><subfield code="b">an annual retrospective XIV</subfield><subfield code="c">edited by D.J. Fisher</subfield></datafield><datafield tag="246" ind1="1" ind2="3"><subfield code="a">Defects and diffusion in semiconductors XIV</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Durnten-Zurich</subfield><subfield code="b">TTP</subfield><subfield code="c">[2012]</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 online resource (vii, 243 pages)</subfield><subfield code="b">illustrations (black and white)</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">Diffusion and defect data</subfield><subfield code="v">v. 332</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Includes abstracts of papers published in scientific literature</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Print version record</subfield></datafield><datafield tag="505" ind1="8" ind2=" "><subfield code="a">A study was made of the diffusion of Al in AlAs/GaAs distributed Bragg-reflectors using the high angle annular dark field scanning transmission electron microscopy intensity. The measured intensity was normalized to the intensity of the incoming electron beam using a detector scan. The normalized intensity could be directly compared with a set of frozen lattice simulations yielding specimen thickness in regions with known composition or concentration in regions with known thickness. The thickness was evaluated both from GaAs and AlAs regions yielding that the specimen was about 15nm thinner in AlAs regions due to oxidation. For the concentration evaluation the thickness was derived from GaAs regions and concentrations up to 1.2 were found due to the overestimated thickness. Concentration profiles were scaled down to 1.0 and fitted to the solution of Fick's laws Temporary description, more details to follow</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">TECHNOLOGY & ENGINEERING / Electronics / Semiconductors</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">TECHNOLOGY & ENGINEERING / Electronics / Solid State</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Semiconductors / Defects</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Semiconductors / Diffusion</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductors</subfield><subfield code="x">Defects</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductors</subfield><subfield code="x">Diffusion</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Fisher, D. J.</subfield><subfield code="4">edt</subfield></datafield><datafield tag="776" ind1="0" ind2="8"><subfield code="i">Erscheint auch als</subfield><subfield code="n">Druck-Ausgabe</subfield><subfield code="a">Defects and diffusion in semiconductors</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=517432</subfield><subfield code="x">Aggregator</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-4-EBA</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-028456772</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=517432</subfield><subfield code="l">FAW01</subfield><subfield code="p">ZDB-4-EBA</subfield><subfield code="q">FAW_PDA_EBA</subfield><subfield code="x">Aggregator</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=517432</subfield><subfield code="l">FAW02</subfield><subfield code="p">ZDB-4-EBA</subfield><subfield code="q">FAW_PDA_EBA</subfield><subfield code="x">Aggregator</subfield><subfield code="3">Volltext</subfield></datafield></record></collection> |
| id | DE-604.BV043032121 |
| illustrated | Illustrated |
| indexdate | 2024-07-10T07:15:30Z |
| institution | BVB |
| isbn | 3038139866 9783038139867 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-028456772 |
| oclc_num | 838102048 |
| open_access_boolean | |
| owner | DE-1046 DE-1047 |
| owner_facet | DE-1046 DE-1047 |
| physical | 1 online resource (vii, 243 pages) illustrations (black and white) |
| psigel | ZDB-4-EBA ZDB-4-EBA FAW_PDA_EBA |
| publishDate | 2012 |
| publishDateSearch | 2012 |
| publishDateSort | 2012 |
| publisher | TTP |
| record_format | marc |
| series2 | Diffusion and defect data |
| spelling | Defects and diffusion in semiconductors (Annual retrospective XIV) Defects and diffusion in semiconductors an annual retrospective XIV edited by D.J. Fisher Defects and diffusion in semiconductors XIV Durnten-Zurich TTP [2012] 1 online resource (vii, 243 pages) illustrations (black and white) txt rdacontent c rdamedia cr rdacarrier Diffusion and defect data v. 332 Includes abstracts of papers published in scientific literature Print version record A study was made of the diffusion of Al in AlAs/GaAs distributed Bragg-reflectors using the high angle annular dark field scanning transmission electron microscopy intensity. The measured intensity was normalized to the intensity of the incoming electron beam using a detector scan. The normalized intensity could be directly compared with a set of frozen lattice simulations yielding specimen thickness in regions with known composition or concentration in regions with known thickness. The thickness was evaluated both from GaAs and AlAs regions yielding that the specimen was about 15nm thinner in AlAs regions due to oxidation. For the concentration evaluation the thickness was derived from GaAs regions and concentrations up to 1.2 were found due to the overestimated thickness. Concentration profiles were scaled down to 1.0 and fitted to the solution of Fick's laws Temporary description, more details to follow TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh Semiconductors / Defects fast Semiconductors / Diffusion fast Semiconductors Defects Semiconductors Diffusion Fisher, D. J. edt Erscheint auch als Druck-Ausgabe Defects and diffusion in semiconductors http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=517432 Aggregator Volltext |
| spellingShingle | Defects and diffusion in semiconductors an annual retrospective XIV A study was made of the diffusion of Al in AlAs/GaAs distributed Bragg-reflectors using the high angle annular dark field scanning transmission electron microscopy intensity. The measured intensity was normalized to the intensity of the incoming electron beam using a detector scan. The normalized intensity could be directly compared with a set of frozen lattice simulations yielding specimen thickness in regions with known composition or concentration in regions with known thickness. The thickness was evaluated both from GaAs and AlAs regions yielding that the specimen was about 15nm thinner in AlAs regions due to oxidation. For the concentration evaluation the thickness was derived from GaAs regions and concentrations up to 1.2 were found due to the overestimated thickness. Concentration profiles were scaled down to 1.0 and fitted to the solution of Fick's laws Temporary description, more details to follow TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh Semiconductors / Defects fast Semiconductors / Diffusion fast Semiconductors Defects Semiconductors Diffusion |
| title | Defects and diffusion in semiconductors an annual retrospective XIV |
| title_alt | Defects and diffusion in semiconductors (Annual retrospective XIV) Defects and diffusion in semiconductors XIV |
| title_auth | Defects and diffusion in semiconductors an annual retrospective XIV |
| title_exact_search | Defects and diffusion in semiconductors an annual retrospective XIV |
| title_full | Defects and diffusion in semiconductors an annual retrospective XIV edited by D.J. Fisher |
| title_fullStr | Defects and diffusion in semiconductors an annual retrospective XIV edited by D.J. Fisher |
| title_full_unstemmed | Defects and diffusion in semiconductors an annual retrospective XIV edited by D.J. Fisher |
| title_short | Defects and diffusion in semiconductors |
| title_sort | defects and diffusion in semiconductors an annual retrospective xiv |
| title_sub | an annual retrospective XIV |
| topic | TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh Semiconductors / Defects fast Semiconductors / Diffusion fast Semiconductors Defects Semiconductors Diffusion |
| topic_facet | TECHNOLOGY & ENGINEERING / Electronics / Semiconductors TECHNOLOGY & ENGINEERING / Electronics / Solid State Semiconductors / Defects Semiconductors / Diffusion Semiconductors Defects Semiconductors Diffusion |
| url | http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=517432 |
| work_keys_str_mv | UT defectsanddiffusioninsemiconductorsannualretrospectivexiv AT fisherdj defectsanddiffusioninsemiconductorsanannualretrospectivexiv AT fisherdj defectsanddiffusioninsemiconductorsxiv |