Aluminum oxide for the surface passivation of high efficiency silicon solar cells: technology and advanced characterization
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Abschlussarbeit Buch |
| Sprache: | English |
| Veröffentlicht: |
Stuttgart
Fraunhofer Verlag
2015
|
| Schlagworte: | |
| Online-Zugang: | Inhaltstext Inhaltsverzeichnis |
| Beschreibung: | III, 236 S. num., mostly col. illus. and tab. |
| ISBN: | 9783839608470 3839608473 |
Internformat
MARC
| LEADER | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | BV042753246 | ||
| 003 | DE-604 | ||
| 005 | 20151012 | ||
| 007 | t | ||
| 008 | 150811s2015 gw a||| m||| 00||| eng d | ||
| 015 | |a 15,N10 |2 dnb | ||
| 016 | 7 | |a 1067585931 |2 DE-101 | |
| 020 | |a 9783839608470 |c Pb. : EUR 59.00 (DE), EUR 60.70 (AT), sfr 93.00 (freier Pr.) |9 978-3-8396-0847-0 | ||
| 020 | |a 3839608473 |9 3-8396-0847-3 | ||
| 035 | |a (OCoLC)904807814 | ||
| 035 | |a (DE-599)DNB1067585931 | ||
| 040 | |a DE-604 |b ger |e rakddb | ||
| 041 | 0 | |a eng | |
| 044 | |a gw |c XA-DE-BW | ||
| 049 | |a DE-92 | ||
| 082 | 0 | |a 620 | |
| 082 | 0 | |a 621.312440284 |2 22/ger | |
| 084 | |a ZP 3730 |0 (DE-625)157971: |2 rvk | ||
| 084 | |a 620 |2 sdnb | ||
| 100 | 1 | |a Richter, Armin |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Aluminum oxide for the surface passivation of high efficiency silicon solar cells |b technology and advanced characterization |c Armin Richter |
| 264 | 1 | |a Stuttgart |b Fraunhofer Verlag |c 2015 | |
| 300 | |a III, 236 S. |b num., mostly col. illus. and tab. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 502 | |a Zugl.: Konstanz, Univ., Diss., 2014 | ||
| 650 | 0 | 7 | |a Silicium |0 (DE-588)4077445-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a n-Halbleiter |0 (DE-588)4171953-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Solarzelle |0 (DE-588)4181740-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Bor |0 (DE-588)4007709-3 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Effizienzsteigerung |0 (DE-588)4443806-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Aluminiumoxide |0 (DE-588)4001590-7 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Atomlagenabscheidung |0 (DE-588)7712127-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Emitter |0 (DE-588)4152082-8 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Auger-Rekombination |0 (DE-588)4663811-8 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Passivierung |0 (DE-588)4173500-6 |2 gnd |9 rswk-swf |
| 653 | |a THX | ||
| 655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
| 689 | 0 | 0 | |a Solarzelle |0 (DE-588)4181740-0 |D s |
| 689 | 0 | 1 | |a Silicium |0 (DE-588)4077445-4 |D s |
| 689 | 0 | 2 | |a n-Halbleiter |0 (DE-588)4171953-0 |D s |
| 689 | 0 | 3 | |a Passivierung |0 (DE-588)4173500-6 |D s |
| 689 | 0 | 4 | |a Aluminiumoxide |0 (DE-588)4001590-7 |D s |
| 689 | 0 | 5 | |a Atomlagenabscheidung |0 (DE-588)7712127-2 |D s |
| 689 | 0 | 6 | |a Auger-Rekombination |0 (DE-588)4663811-8 |D s |
| 689 | 0 | 7 | |a Emitter |0 (DE-588)4152082-8 |D s |
| 689 | 0 | 8 | |a Bor |0 (DE-588)4007709-3 |D s |
| 689 | 0 | 9 | |a Effizienzsteigerung |0 (DE-588)4443806-0 |D s |
| 689 | 0 | |5 DE-604 | |
| 710 | 2 | |a Fraunhofer-Institut für System- und Innovationsforschung |e Sonstige |0 (DE-588)10109530-2 |4 oth | |
| 856 | 4 | 2 | |m X:MVB |q text/html |u http://deposit.dnb.de/cgi-bin/dokserv?id=5163522&prov=M&dok_var=1&dok_ext=htm |3 Inhaltstext |
| 856 | 4 | 2 | |m DNB Datenaustausch |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=028183958&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 943 | 1 | |a oai:aleph.bib-bvb.de:BVB01-028183958 | |
Datensatz im Suchindex
| _version_ | 1809771959678926848 |
|---|---|
| adam_text |
TABLE OF CONTENTS
1 INTRODUCTION 1
2 MINORITY CARRIER RECOMBINATION IN CRYSTALLINE SILICON 5
2.1 GENERAL ASPECTS 5
2.2 FUNDAMENTAL RECOMBINATION MECHANISMS 7
2.2.1 RADIATIVE BAND-TO-BAND RECOMBINATION 7
2.2.2 AUGER RECOMBINATION 9
2.2.3 DEFECT RECOMBINATION 10
2.3 SURFACE RECOMBINATION 12
2.3.1 RECOMBINATION THROUGH INTERFACE STATES 12
2.3.2 MODELING THE SURFACE RECOMBINATION VELOCITY IN CASE OF BAND
BENDING. IS
2.3.3 SURFACE DEPLETION REGION RECOMBINATION 24
2.3.4 RECOMBINATION AT DIFFUSED SURFACES 25
2.4 EFFECTIVE LIFETIME 26
3 CHARACTERIZATION OF CHARGE CARRIER RECOMBINATION 29
3.1 MEASURING EFFECTIVE LIFETIME 29
3.1.1 PHOTO-CONDUCTANCE DECAY TECHNIQUE 29
3.1.2 PHOTO-LUMINESCENCE TECHNIQUE 30
3.2 MEASURING INTERFACE PROPERTIES OF PASSIVATED SURFACES 31
3.2.1 COCOS MEASUREMENTS 31
3.2.2 PRACTICAL CONSIDERATIONS FOR COCOS MEASUREMENTS 34
4 IMPROVED QUANTITATIVE DESCRIPTION OF AUGER RECOMBINATION IN
CRYSTALLINE SILICON 37
4.1 INTRODUCTION 37
4.2 EXPERIMENTAL LIFETIME LIMIT OF SILICON 39
4.2.1 EXPERIMENTAL DETAILS 39
4.2.2 UNCERTAINTY OF THE LIFETIME MEASUREMENTS 40
4.2.3 DISCRIMINATION BETWEEN BULK AND SURFACE RECOMBINATION 41
4.2.4 CARRIER RECOMBINATION AS A FUNCTION OF THE INJECTION LEVEL 43
4.3 EXTRACTION OF THE AUGER RECOMBINATION RATE FROM MEASURED LIFETIME
DATA 46
4.3.1 MODELING OF LIFETIME DATA 46
4.3.2 QUANTITATIVE DESCRIPTION OF THE AUGER RECOMBINATION 49
4.3.3 DISCUSSION 51
4.3.4 SIMPLIFIED EXPRESSIONS FOR THE INTRINSIC LIFETIME LIMIT 53
4.4 SUMMARY 55
5 REASSESSMENT OF THE LIMITING EFFICIENCY FOR CRYSTALLINE SILICON SOLAR
CELLS 57
5.1 INTRODUCTION 57
5.2 MODELING OF THE I-V CHARACTERISTIC 58
5.2.1 GENERAL APPROACH 58
5.2.2 PHOTO-GENERATION 59
5.2.3 INTRINSIC RECOMBINATION AND PHOTON RECYCLING 60
5.2.4 EFFECTIVE INTRINSIC CARRIER CONCENTRATION 62
5.2.5 CALCULATION OF IV PARAMETERS 63
HTTP://D-NB.INFO/1067585931
II
TABLE OF CONTENT
5.3 RESULTS AND DISCUSSION 63
5.3.1 INFLUENCE OF SOLAR SPECTRUM AND SILICON PARAMETERS 63
5.3.2 INFLUENCE OF BASE DOPING CONCENTRATION 66
5.4 SUMMARY 71
6 ON THE EXTRACTION OF RECOMBINATION PARAMETERS FOR DIFFUSED SURFACES 73
6.1 EXTRACTION OF THE SATURATION CURRENT DENSITIES 73
6.1.1 INTRODUCTION 73
6.1.2 EXPERIMENTAL DETAILS 74
6.1.3 EXTRACTION OF SATURATION CURRENT DENSITIES 75
6.1.4 RESULTS AND DISCUSSION 78
6.2 EXTRACTION OF THE SURFACE RECOMBINATION VELOCITY FOR DIFFUSED
SURFACES 82
6.2.1 INTRODUCTION 82
6.2.2 EXTRACTION OF THE SURFACE RECOMBINATION VELOCITY 83
6.2.3 RESULTS AND DISCUSSION 84
6.3 SUMMARY 86
7 SILICON SURFACE PASSIVATION WITH ALD A1
2
0
3
87
7.1 INTRODUCTION 87
7.2 ATOMIC LAYER DEPOSITION (ALD) OF A1
2
0
3
91
7.3 CHARACTERIZATION OF THE SURFACE PASSIVATION WITH A1
2
0
3
AND AKCTYSINX STACKS
ON LOWLY-DOPED SILICON 94
7.3.1 EXPERIMENTAL DETAILS 95
7.3.2 REACTION KINETICS OF THE THERMAL ACTIVATION OF THE A1
2
0
3
SURFACE
PASSIVATION 96
7.3.3 A^CVSINJT STACKS: THERMAL STABILITY 103
7.3.4 A^CYSINX STACKS: INFLUENCE OF THE A1
2
0
3
LAYER THICKNESS 107
7.3.5 A^CYSINX STACKS: INFLUENCE OF HYDROGEN CONTENT IN THE CAPPING
LAYERL 12
7.3.6 INTERFACE PROPERTIES AS A FUNCTION OF THE BASE DOPING
CONCENTRATION 115
7.4 PASSIVATION OF BORON-DIFFUSED SURFACES' 117
7.4.1 EXPERIMENTAL DETAILS 118
7.4.2 INFLUENCE OF DIFFERENT DEPOSITION CONDITIONS 121
7.4.3 PASSIVATION QUALITY ON DIFFERENT BORON-DOPED EMITTERS 124
7.4.4 SURFACE RECOMBINATION VELOCITY AT BORON-DOPED EMITTERS 126
7.4.5 INFLUENCE OF THE A1
2
0
3
LAYER THICKNESS 127
7.4.6 PASSIVATION QUALITY AFTER PROLONGED UV EXPOSURE 132
7.5 PASSIVATION WITH SPATIAL ALD A1
2
0
3
134
7.5.1 EXPERIMENTAL DETAILS 134
7.5.2 THERMAL STABILITY OF AKCVSINX STACKS: A1
2
0
3
LAYER THICKNESS VARIATION 137
7.5.3 THERMAL STABILITY OF ALIO^SIN* STACKS: FIRING TEMPERATURE
VARIATION. 141
7.6 PASSIVATION OF PHOSPHORUS-DIFFUSED SURFACES 142
7.6.1 THEORETICAL CONSIDERATIONS 143
7.6.2 EXPERIMENTAL DETAILS 145
7.6.3 PASSIVATION QUALITY OF A1
2
0
3
SINGLE LAYERS, AL
2
0
3
/SIN
X
STACKS AND
AL
2
0
3
/SI0
X
STACKS USING PA-ALD A1
2
0
3
148
TABLE OF CONTENT III
7.6.4 PASSIVATION QUALITY OF SI0
X
/AL
2
0
3
STACKS 151
7.6.5 INFLUENCE OF THE THERMAL ACTIVATION ON THE DIFFERENT PASSIVATION
SCHEMES 152
7.6.6 SURFACE RECOMBINATION VELOCITY ON PHOSPHORUS-DIFFUSED SURFACES 153
7.7 SUMMARY 155
8 N-TYPE SILICON SOLAR CELLS WITH PRINTED AND FIRED FRONT-SIDE CONTACTS
159
8.1 INTRODUCTION 159
8.2 FIRED CONTACTS TO BORON-DOPED EMITTERS 160
8.2.1 EXPERIMENTAL DETAILS 160
8.2.2 CHARACTERIZATION OF THE CONTACT PROPERTIES 161
8.2.3 OPEN-CIRCUIT VOLTAGE AND PSEUDO-FILL-FACTOR POTENTIAL 164
8.3 APPLICATION TO M-TYPE BSF SOLAR CELLS 165
8.3.1 EXPERIMENTAL DETAILS 165
8.3.2 RESULTS AND DISCUSSION 166
8.4 SUMMARY 169
9 REAR-SIDE SCHEMES FORP*NN
+
SILICON SOLAR CELLS 171
9.1 INTRODUCTION 171
9.2 BACK SURFACE FIELD (BSF) DOPING PROFILE FOR PNN SOLAR CELLS:
THEORETICAL
CONSIDERATIONS 173
9.3 FABRICATION OF THE PHOSPHORUS-DOPED BSF 176
9.3.1 DIFFERENCES OF BORON AND PHOSPHORUS DIFFUSION IN CRYSTALLINE
SILICON. 176
9.3.2 EXPERIMENTAL DETAILS 178
9.3.3 SEQUENTIAL DIFFUSION: RESULTS AND DISCUSSION 179
9.3.4 CO-DIFFUSION: RESULTS AND DISCUSSION 181
9.4 SEQUENTIALLY DIFFUSED PNN CELLS: A COMPARISON OF SIN
X
AND AL
2
0
3
/SIN
X
FOR
THE N BSF PASSIVATION 182
9.4.1 EXPERIMENTAL DETAILS 182
9.4.2 IDEAL THICKNESS OF THE REAR SIN
X
LAYER BASED ON SIMULATION RESULTS 183
9.4.3 SOLAR CELL RESULTS AND DISCUSSION 185
9.5 CO-DIFFUSED P
+
NN* SOLAR CELLS: AN INDUSTRIALLY FEASIBLE APPROACH 187
9.5.1 EXPERIMENTAL DETAILS 187
9.5.2 RESULTS AND DISCUSSION 188
9.6 SUMMARY 190
10 SUMMARY 193
DEUTSCHE ZUSAMMENFASSUNG 199
BIBLIOGRAPHY 205
APPENDIX 225
1 PHYSICAL CONSTANTS (ACCORDING TO REF. [337]) 225
2 PROPERTIES OF SILICON USED FOR MODELING 225
3 ABBREVIATIONS 226
4 GLOSSARY 227
LIST OF PUBLICATIONS 231
DANKSAGUNG 235 |
| any_adam_object | 1 |
| author | Richter, Armin |
| author_facet | Richter, Armin |
| author_role | aut |
| author_sort | Richter, Armin |
| author_variant | a r ar |
| building | Verbundindex |
| bvnumber | BV042753246 |
| classification_rvk | ZP 3730 |
| ctrlnum | (OCoLC)904807814 (DE-599)DNB1067585931 |
| dewey-full | 620 621.312440284 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 620 - Engineering and allied operations 621 - Applied physics |
| dewey-raw | 620 621.312440284 |
| dewey-search | 620 621.312440284 |
| dewey-sort | 3620 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Maschinenbau / Maschinenwesen Elektrotechnik / Elektronik / Nachrichtentechnik Energietechnik |
| format | Thesis Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>00000nam a2200000 c 4500</leader><controlfield tag="001">BV042753246</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20151012</controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">150811s2015 gw a||| m||| 00||| eng d</controlfield><datafield tag="015" ind1=" " ind2=" "><subfield code="a">15,N10</subfield><subfield code="2">dnb</subfield></datafield><datafield tag="016" ind1="7" ind2=" "><subfield code="a">1067585931</subfield><subfield code="2">DE-101</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9783839608470</subfield><subfield code="c">Pb. : EUR 59.00 (DE), EUR 60.70 (AT), sfr 93.00 (freier Pr.)</subfield><subfield code="9">978-3-8396-0847-0</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">3839608473</subfield><subfield code="9">3-8396-0847-3</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)904807814</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DNB1067585931</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="044" ind1=" " ind2=" "><subfield code="a">gw</subfield><subfield code="c">XA-DE-BW</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-92</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">620</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.312440284</subfield><subfield code="2">22/ger</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ZP 3730</subfield><subfield code="0">(DE-625)157971:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">620</subfield><subfield code="2">sdnb</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Richter, Armin</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Aluminum oxide for the surface passivation of high efficiency silicon solar cells</subfield><subfield code="b">technology and advanced characterization</subfield><subfield code="c">Armin Richter</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Stuttgart</subfield><subfield code="b">Fraunhofer Verlag</subfield><subfield code="c">2015</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">III, 236 S.</subfield><subfield code="b">num., mostly col. illus. and tab.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="502" ind1=" " ind2=" "><subfield code="a">Zugl.: Konstanz, Univ., Diss., 2014</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Silicium</subfield><subfield code="0">(DE-588)4077445-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">n-Halbleiter</subfield><subfield code="0">(DE-588)4171953-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Solarzelle</subfield><subfield code="0">(DE-588)4181740-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Bor</subfield><subfield code="0">(DE-588)4007709-3</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Effizienzsteigerung</subfield><subfield code="0">(DE-588)4443806-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Aluminiumoxide</subfield><subfield code="0">(DE-588)4001590-7</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Atomlagenabscheidung</subfield><subfield code="0">(DE-588)7712127-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Emitter</subfield><subfield code="0">(DE-588)4152082-8</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Auger-Rekombination</subfield><subfield code="0">(DE-588)4663811-8</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Passivierung</subfield><subfield code="0">(DE-588)4173500-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">THX</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)4113937-9</subfield><subfield code="a">Hochschulschrift</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Solarzelle</subfield><subfield code="0">(DE-588)4181740-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Silicium</subfield><subfield code="0">(DE-588)4077445-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">n-Halbleiter</subfield><subfield code="0">(DE-588)4171953-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="3"><subfield code="a">Passivierung</subfield><subfield code="0">(DE-588)4173500-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="4"><subfield code="a">Aluminiumoxide</subfield><subfield code="0">(DE-588)4001590-7</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="5"><subfield code="a">Atomlagenabscheidung</subfield><subfield code="0">(DE-588)7712127-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="6"><subfield code="a">Auger-Rekombination</subfield><subfield code="0">(DE-588)4663811-8</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="7"><subfield code="a">Emitter</subfield><subfield code="0">(DE-588)4152082-8</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="8"><subfield code="a">Bor</subfield><subfield code="0">(DE-588)4007709-3</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="9"><subfield code="a">Effizienzsteigerung</subfield><subfield code="0">(DE-588)4443806-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="710" ind1="2" ind2=" "><subfield code="a">Fraunhofer-Institut für System- und Innovationsforschung</subfield><subfield code="e">Sonstige</subfield><subfield code="0">(DE-588)10109530-2</subfield><subfield code="4">oth</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">X:MVB</subfield><subfield code="q">text/html</subfield><subfield code="u">http://deposit.dnb.de/cgi-bin/dokserv?id=5163522&prov=M&dok_var=1&dok_ext=htm</subfield><subfield code="3">Inhaltstext</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">DNB Datenaustausch</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=028183958&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="943" ind1="1" ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-028183958</subfield></datafield></record></collection> |
| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV042753246 |
| illustrated | Illustrated |
| indexdate | 2024-09-10T01:50:35Z |
| institution | BVB |
| institution_GND | (DE-588)10109530-2 |
| isbn | 9783839608470 3839608473 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-028183958 |
| oclc_num | 904807814 |
| open_access_boolean | |
| owner | DE-92 |
| owner_facet | DE-92 |
| physical | III, 236 S. num., mostly col. illus. and tab. |
| publishDate | 2015 |
| publishDateSearch | 2015 |
| publishDateSort | 2015 |
| publisher | Fraunhofer Verlag |
| record_format | marc |
| spelling | Richter, Armin Verfasser aut Aluminum oxide for the surface passivation of high efficiency silicon solar cells technology and advanced characterization Armin Richter Stuttgart Fraunhofer Verlag 2015 III, 236 S. num., mostly col. illus. and tab. txt rdacontent n rdamedia nc rdacarrier Zugl.: Konstanz, Univ., Diss., 2014 Silicium (DE-588)4077445-4 gnd rswk-swf n-Halbleiter (DE-588)4171953-0 gnd rswk-swf Solarzelle (DE-588)4181740-0 gnd rswk-swf Bor (DE-588)4007709-3 gnd rswk-swf Effizienzsteigerung (DE-588)4443806-0 gnd rswk-swf Aluminiumoxide (DE-588)4001590-7 gnd rswk-swf Atomlagenabscheidung (DE-588)7712127-2 gnd rswk-swf Emitter (DE-588)4152082-8 gnd rswk-swf Auger-Rekombination (DE-588)4663811-8 gnd rswk-swf Passivierung (DE-588)4173500-6 gnd rswk-swf THX (DE-588)4113937-9 Hochschulschrift gnd-content Solarzelle (DE-588)4181740-0 s Silicium (DE-588)4077445-4 s n-Halbleiter (DE-588)4171953-0 s Passivierung (DE-588)4173500-6 s Aluminiumoxide (DE-588)4001590-7 s Atomlagenabscheidung (DE-588)7712127-2 s Auger-Rekombination (DE-588)4663811-8 s Emitter (DE-588)4152082-8 s Bor (DE-588)4007709-3 s Effizienzsteigerung (DE-588)4443806-0 s DE-604 Fraunhofer-Institut für System- und Innovationsforschung Sonstige (DE-588)10109530-2 oth X:MVB text/html http://deposit.dnb.de/cgi-bin/dokserv?id=5163522&prov=M&dok_var=1&dok_ext=htm Inhaltstext DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=028183958&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Richter, Armin Aluminum oxide for the surface passivation of high efficiency silicon solar cells technology and advanced characterization Silicium (DE-588)4077445-4 gnd n-Halbleiter (DE-588)4171953-0 gnd Solarzelle (DE-588)4181740-0 gnd Bor (DE-588)4007709-3 gnd Effizienzsteigerung (DE-588)4443806-0 gnd Aluminiumoxide (DE-588)4001590-7 gnd Atomlagenabscheidung (DE-588)7712127-2 gnd Emitter (DE-588)4152082-8 gnd Auger-Rekombination (DE-588)4663811-8 gnd Passivierung (DE-588)4173500-6 gnd |
| subject_GND | (DE-588)4077445-4 (DE-588)4171953-0 (DE-588)4181740-0 (DE-588)4007709-3 (DE-588)4443806-0 (DE-588)4001590-7 (DE-588)7712127-2 (DE-588)4152082-8 (DE-588)4663811-8 (DE-588)4173500-6 (DE-588)4113937-9 |
| title | Aluminum oxide for the surface passivation of high efficiency silicon solar cells technology and advanced characterization |
| title_auth | Aluminum oxide for the surface passivation of high efficiency silicon solar cells technology and advanced characterization |
| title_exact_search | Aluminum oxide for the surface passivation of high efficiency silicon solar cells technology and advanced characterization |
| title_full | Aluminum oxide for the surface passivation of high efficiency silicon solar cells technology and advanced characterization Armin Richter |
| title_fullStr | Aluminum oxide for the surface passivation of high efficiency silicon solar cells technology and advanced characterization Armin Richter |
| title_full_unstemmed | Aluminum oxide for the surface passivation of high efficiency silicon solar cells technology and advanced characterization Armin Richter |
| title_short | Aluminum oxide for the surface passivation of high efficiency silicon solar cells |
| title_sort | aluminum oxide for the surface passivation of high efficiency silicon solar cells technology and advanced characterization |
| title_sub | technology and advanced characterization |
| topic | Silicium (DE-588)4077445-4 gnd n-Halbleiter (DE-588)4171953-0 gnd Solarzelle (DE-588)4181740-0 gnd Bor (DE-588)4007709-3 gnd Effizienzsteigerung (DE-588)4443806-0 gnd Aluminiumoxide (DE-588)4001590-7 gnd Atomlagenabscheidung (DE-588)7712127-2 gnd Emitter (DE-588)4152082-8 gnd Auger-Rekombination (DE-588)4663811-8 gnd Passivierung (DE-588)4173500-6 gnd |
| topic_facet | Silicium n-Halbleiter Solarzelle Bor Effizienzsteigerung Aluminiumoxide Atomlagenabscheidung Emitter Auger-Rekombination Passivierung Hochschulschrift |
| url | http://deposit.dnb.de/cgi-bin/dokserv?id=5163522&prov=M&dok_var=1&dok_ext=htm http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=028183958&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT richterarmin aluminumoxideforthesurfacepassivationofhighefficiencysiliconsolarcellstechnologyandadvancedcharacterization AT fraunhoferinstitutfursystemundinnovationsforschung aluminumoxideforthesurfacepassivationofhighefficiencysiliconsolarcellstechnologyandadvancedcharacterization |