Process Technology for Semiconductor Lasers: Crystal Growth and Microprocesses
Saved in:
| Main Author: | |
|---|---|
| Format: | Electronic eBook |
| Language: | English |
| Published: |
Berlin, Heidelberg
Springer Berlin Heidelberg
1996
|
| Series: | Springer Series in Materials Science
30 |
| Subjects: | |
| Online Access: | Volltext |
| Item Description: | Process Technology for Semiconductor Lasers describes the design principles of semiconductor lasers, mainly from the fabrication point of view. Starting out with the history of semiconductor-laser development and applications the materials for use in lasing from short to long wavelengths are reviewed. The basic design principles for semiconductor- laser devices and the epitaxy for laser production are discussed. An entire chapter is devoted to the technology of liquid-phase epitaxy, and another one to vapor-phase and beam epitaxies, respectively. The characterizations of laser materials, and the fabrication and characteristics of semiconductor lasers are treated. Mode-control techniques are presented, and surface-emitting lasers are introduced in the final chapter |
| Physical Description: | 1 Online-Ressource (X, 169p. 115 illus) |
| ISBN: | 9783642795763 9783642795787 |
| ISSN: | 0933-033X |
| DOI: | 10.1007/978-3-642-79576-3 |
Staff View
MARC
| LEADER | 00000nmm a2200000zcb4500 | ||
|---|---|---|---|
| 001 | BV042413671 | ||
| 003 | DE-604 | ||
| 005 | 20150922 | ||
| 007 | cr|uuu---uuuuu | ||
| 008 | 150316s1996 |||| o||u| ||||||eng d | ||
| 020 | |a 9783642795763 |c Online |9 978-3-642-79576-3 | ||
| 020 | |a 9783642795787 |c Print |9 978-3-642-79578-7 | ||
| 024 | 7 | |a 10.1007/978-3-642-79576-3 |2 doi | |
| 035 | |a (OCoLC)863812673 | ||
| 035 | |a (DE-599)BVBBV042413671 | ||
| 040 | |a DE-604 |b ger |e aacr | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-91 |a DE-83 | ||
| 082 | 0 | |a 621.36 |2 23 | |
| 084 | |a ELT 270f |2 stub | ||
| 084 | |a PHY 000 |2 stub | ||
| 084 | |a PHY 373f |2 stub | ||
| 100 | 1 | |a Iga, Kenichi |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Process Technology for Semiconductor Lasers |b Crystal Growth and Microprocesses |c by Kenichi Iga, Susumu Kinoshita |
| 264 | 1 | |a Berlin, Heidelberg |b Springer Berlin Heidelberg |c 1996 | |
| 300 | |a 1 Online-Ressource (X, 169p. 115 illus) | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b c |2 rdamedia | ||
| 338 | |b cr |2 rdacarrier | ||
| 490 | 0 | |a Springer Series in Materials Science |v 30 |x 0933-033X | |
| 500 | |a Process Technology for Semiconductor Lasers describes the design principles of semiconductor lasers, mainly from the fabrication point of view. Starting out with the history of semiconductor-laser development and applications the materials for use in lasing from short to long wavelengths are reviewed. The basic design principles for semiconductor- laser devices and the epitaxy for laser production are discussed. An entire chapter is devoted to the technology of liquid-phase epitaxy, and another one to vapor-phase and beam epitaxies, respectively. The characterizations of laser materials, and the fabrication and characteristics of semiconductor lasers are treated. Mode-control techniques are presented, and surface-emitting lasers are introduced in the final chapter | ||
| 650 | 4 | |a Physics | |
| 650 | 4 | |a Engineering | |
| 650 | 4 | |a Electronics | |
| 650 | 4 | |a Laser Technology, Photonics | |
| 650 | 4 | |a Quantum Optics | |
| 650 | 4 | |a Strongly Correlated Systems, Superconductivity | |
| 650 | 4 | |a Electronics and Microelectronics, Instrumentation | |
| 650 | 4 | |a Engineering, general | |
| 650 | 4 | |a Optics, Optoelectronics, Plasmonics and Optical Devices | |
| 650 | 4 | |a Ingenieurwissenschaften | |
| 650 | 0 | 7 | |a Halbleitertechnologie |0 (DE-588)4158814-9 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Kristallwachstum |0 (DE-588)4123579-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Schichtwachstum |0 (DE-588)4273432-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleiterlaser |0 (DE-588)4139556-6 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Epitaxie |0 (DE-588)4152545-0 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a Halbleiterlaser |0 (DE-588)4139556-6 |D s |
| 689 | 0 | 1 | |a Kristallwachstum |0 (DE-588)4123579-4 |D s |
| 689 | 0 | 2 | |a Schichtwachstum |0 (DE-588)4273432-0 |D s |
| 689 | 0 | |5 DE-604 | |
| 689 | 1 | 0 | |a Halbleiterlaser |0 (DE-588)4139556-6 |D s |
| 689 | 1 | 1 | |a Epitaxie |0 (DE-588)4152545-0 |D s |
| 689 | 1 | |5 DE-604 | |
| 689 | 2 | 0 | |a Halbleiterlaser |0 (DE-588)4139556-6 |D s |
| 689 | 2 | 1 | |a Halbleitertechnologie |0 (DE-588)4158814-9 |D s |
| 689 | 2 | |5 DE-604 | |
| 700 | 1 | |a Kinoshita, Susumu |e Sonstige |4 oth | |
| 856 | 4 | 0 | |u https://doi.org/10.1007/978-3-642-79576-3 |x Verlag |3 Volltext |
| 912 | |a ZDB-2-PHA |a ZDB-2-BAE | ||
| 940 | 1 | |q ZDB-2-PHA_Archive | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-027849164 | ||
Record in the Search Index
| _version_ | 1804153078294773760 |
|---|---|
| any_adam_object | |
| author | Iga, Kenichi |
| author_facet | Iga, Kenichi |
| author_role | aut |
| author_sort | Iga, Kenichi |
| author_variant | k i ki |
| building | Verbundindex |
| bvnumber | BV042413671 |
| classification_tum | ELT 270f PHY 000 PHY 373f |
| collection | ZDB-2-PHA ZDB-2-BAE |
| ctrlnum | (OCoLC)863812673 (DE-599)BVBBV042413671 |
| dewey-full | 621.36 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.36 |
| dewey-search | 621.36 |
| dewey-sort | 3621.36 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik Elektrotechnik Elektrotechnik / Elektronik / Nachrichtentechnik |
| doi_str_mv | 10.1007/978-3-642-79576-3 |
| format | Electronic eBook |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>03320nmm a2200697zcb4500</leader><controlfield tag="001">BV042413671</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20150922 </controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">150316s1996 |||| o||u| ||||||eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9783642795763</subfield><subfield code="c">Online</subfield><subfield code="9">978-3-642-79576-3</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9783642795787</subfield><subfield code="c">Print</subfield><subfield code="9">978-3-642-79578-7</subfield></datafield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/978-3-642-79576-3</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)863812673</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV042413671</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">aacr</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-91</subfield><subfield code="a">DE-83</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.36</subfield><subfield code="2">23</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ELT 270f</subfield><subfield code="2">stub</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">PHY 000</subfield><subfield code="2">stub</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">PHY 373f</subfield><subfield code="2">stub</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Iga, Kenichi</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Process Technology for Semiconductor Lasers</subfield><subfield code="b">Crystal Growth and Microprocesses</subfield><subfield code="c">by Kenichi Iga, Susumu Kinoshita</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Berlin, Heidelberg</subfield><subfield code="b">Springer Berlin Heidelberg</subfield><subfield code="c">1996</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 Online-Ressource (X, 169p. 115 illus)</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">Springer Series in Materials Science</subfield><subfield code="v">30</subfield><subfield code="x">0933-033X</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Process Technology for Semiconductor Lasers describes the design principles of semiconductor lasers, mainly from the fabrication point of view. Starting out with the history of semiconductor-laser development and applications the materials for use in lasing from short to long wavelengths are reviewed. The basic design principles for semiconductor- laser devices and the epitaxy for laser production are discussed. An entire chapter is devoted to the technology of liquid-phase epitaxy, and another one to vapor-phase and beam epitaxies, respectively. The characterizations of laser materials, and the fabrication and characteristics of semiconductor lasers are treated. Mode-control techniques are presented, and surface-emitting lasers are introduced in the final chapter</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Physics</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Engineering</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electronics</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Laser Technology, Photonics</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Quantum Optics</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Strongly Correlated Systems, Superconductivity</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electronics and Microelectronics, Instrumentation</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Engineering, general</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Optics, Optoelectronics, Plasmonics and Optical Devices</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Ingenieurwissenschaften</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleitertechnologie</subfield><subfield code="0">(DE-588)4158814-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Kristallwachstum</subfield><subfield code="0">(DE-588)4123579-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Schichtwachstum</subfield><subfield code="0">(DE-588)4273432-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiterlaser</subfield><subfield code="0">(DE-588)4139556-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Epitaxie</subfield><subfield code="0">(DE-588)4152545-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Halbleiterlaser</subfield><subfield code="0">(DE-588)4139556-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Kristallwachstum</subfield><subfield code="0">(DE-588)4123579-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">Schichtwachstum</subfield><subfield code="0">(DE-588)4273432-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Halbleiterlaser</subfield><subfield code="0">(DE-588)4139556-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="1"><subfield code="a">Epitaxie</subfield><subfield code="0">(DE-588)4152545-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="2" ind2="0"><subfield code="a">Halbleiterlaser</subfield><subfield code="0">(DE-588)4139556-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="2" ind2="1"><subfield code="a">Halbleitertechnologie</subfield><subfield code="0">(DE-588)4158814-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="2" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kinoshita, Susumu</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1007/978-3-642-79576-3</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-2-PHA</subfield><subfield code="a">ZDB-2-BAE</subfield></datafield><datafield tag="940" ind1="1" ind2=" "><subfield code="q">ZDB-2-PHA_Archive</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-027849164</subfield></datafield></record></collection> |
| id | DE-604.BV042413671 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T01:20:53Z |
| institution | BVB |
| isbn | 9783642795763 9783642795787 |
| issn | 0933-033X |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-027849164 |
| oclc_num | 863812673 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-83 |
| owner_facet | DE-91 DE-BY-TUM DE-83 |
| physical | 1 Online-Ressource (X, 169p. 115 illus) |
| psigel | ZDB-2-PHA ZDB-2-BAE ZDB-2-PHA_Archive |
| publishDate | 1996 |
| publishDateSearch | 1996 |
| publishDateSort | 1996 |
| publisher | Springer Berlin Heidelberg |
| record_format | marc |
| series2 | Springer Series in Materials Science |
| spelling | Iga, Kenichi Verfasser aut Process Technology for Semiconductor Lasers Crystal Growth and Microprocesses by Kenichi Iga, Susumu Kinoshita Berlin, Heidelberg Springer Berlin Heidelberg 1996 1 Online-Ressource (X, 169p. 115 illus) txt rdacontent c rdamedia cr rdacarrier Springer Series in Materials Science 30 0933-033X Process Technology for Semiconductor Lasers describes the design principles of semiconductor lasers, mainly from the fabrication point of view. Starting out with the history of semiconductor-laser development and applications the materials for use in lasing from short to long wavelengths are reviewed. The basic design principles for semiconductor- laser devices and the epitaxy for laser production are discussed. An entire chapter is devoted to the technology of liquid-phase epitaxy, and another one to vapor-phase and beam epitaxies, respectively. The characterizations of laser materials, and the fabrication and characteristics of semiconductor lasers are treated. Mode-control techniques are presented, and surface-emitting lasers are introduced in the final chapter Physics Engineering Electronics Laser Technology, Photonics Quantum Optics Strongly Correlated Systems, Superconductivity Electronics and Microelectronics, Instrumentation Engineering, general Optics, Optoelectronics, Plasmonics and Optical Devices Ingenieurwissenschaften Halbleitertechnologie (DE-588)4158814-9 gnd rswk-swf Kristallwachstum (DE-588)4123579-4 gnd rswk-swf Schichtwachstum (DE-588)4273432-0 gnd rswk-swf Halbleiterlaser (DE-588)4139556-6 gnd rswk-swf Epitaxie (DE-588)4152545-0 gnd rswk-swf Halbleiterlaser (DE-588)4139556-6 s Kristallwachstum (DE-588)4123579-4 s Schichtwachstum (DE-588)4273432-0 s DE-604 Epitaxie (DE-588)4152545-0 s Halbleitertechnologie (DE-588)4158814-9 s Kinoshita, Susumu Sonstige oth https://doi.org/10.1007/978-3-642-79576-3 Verlag Volltext |
| spellingShingle | Iga, Kenichi Process Technology for Semiconductor Lasers Crystal Growth and Microprocesses Physics Engineering Electronics Laser Technology, Photonics Quantum Optics Strongly Correlated Systems, Superconductivity Electronics and Microelectronics, Instrumentation Engineering, general Optics, Optoelectronics, Plasmonics and Optical Devices Ingenieurwissenschaften Halbleitertechnologie (DE-588)4158814-9 gnd Kristallwachstum (DE-588)4123579-4 gnd Schichtwachstum (DE-588)4273432-0 gnd Halbleiterlaser (DE-588)4139556-6 gnd Epitaxie (DE-588)4152545-0 gnd |
| subject_GND | (DE-588)4158814-9 (DE-588)4123579-4 (DE-588)4273432-0 (DE-588)4139556-6 (DE-588)4152545-0 |
| title | Process Technology for Semiconductor Lasers Crystal Growth and Microprocesses |
| title_auth | Process Technology for Semiconductor Lasers Crystal Growth and Microprocesses |
| title_exact_search | Process Technology for Semiconductor Lasers Crystal Growth and Microprocesses |
| title_full | Process Technology for Semiconductor Lasers Crystal Growth and Microprocesses by Kenichi Iga, Susumu Kinoshita |
| title_fullStr | Process Technology for Semiconductor Lasers Crystal Growth and Microprocesses by Kenichi Iga, Susumu Kinoshita |
| title_full_unstemmed | Process Technology for Semiconductor Lasers Crystal Growth and Microprocesses by Kenichi Iga, Susumu Kinoshita |
| title_short | Process Technology for Semiconductor Lasers |
| title_sort | process technology for semiconductor lasers crystal growth and microprocesses |
| title_sub | Crystal Growth and Microprocesses |
| topic | Physics Engineering Electronics Laser Technology, Photonics Quantum Optics Strongly Correlated Systems, Superconductivity Electronics and Microelectronics, Instrumentation Engineering, general Optics, Optoelectronics, Plasmonics and Optical Devices Ingenieurwissenschaften Halbleitertechnologie (DE-588)4158814-9 gnd Kristallwachstum (DE-588)4123579-4 gnd Schichtwachstum (DE-588)4273432-0 gnd Halbleiterlaser (DE-588)4139556-6 gnd Epitaxie (DE-588)4152545-0 gnd |
| topic_facet | Physics Engineering Electronics Laser Technology, Photonics Quantum Optics Strongly Correlated Systems, Superconductivity Electronics and Microelectronics, Instrumentation Engineering, general Optics, Optoelectronics, Plasmonics and Optical Devices Ingenieurwissenschaften Halbleitertechnologie Kristallwachstum Schichtwachstum Halbleiterlaser Epitaxie |
| url | https://doi.org/10.1007/978-3-642-79576-3 |
| work_keys_str_mv | AT igakenichi processtechnologyforsemiconductorlaserscrystalgrowthandmicroprocesses AT kinoshitasusumu processtechnologyforsemiconductorlaserscrystalgrowthandmicroprocesses |