Heavily Doped Semiconductors:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Boston, MA
Springer New York
1969
|
| Schriftenreihe: | Monographs in Semiconductor Physics
1 |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Beschreibung: | Recently, there has been a considerable upsurge of interest in heavily doped semiconductors. This interest is due primarily to the expanding range of applications of such materials. Moreover, the heavy doping of semiconductors produces new effects (the formation of impurity aggregates, the appearance of allowed states in the forbidden band, etc J, which are of great interest in solid-state physics. The rapid growth in the number of papers on heavily doped semiconductors makes it difficult to review the results obtained so far. Therefore, many investigations carried out in 1966-7, particularly those on AIIIBV semiconductors, are not discussed in the present monograph, which represents the state of the knowledge in 1965. Nevertheless, the author hopes that, in spite of this, the book will be useful. An attempt is made, first, to review investigations of heavily doped semiconductors from a certain viewpoint and, secondly, to suggest some ideas (Chap. 5) which may be controversial but which are intended to stimulate further studies of heavily doped semiconductors which can be regarded as a special case of disordered systems. The work of American scientists investigating heavily doped semiconductors, in particular the efforts of E. O. Kane, J. I. Pankove, R. N. Hall, R. A. Logan, W. G. Spitzer, F. A. Trumbore, and many others, is well known to Soviet investigators. It gives me pleasure to learn that Western readers will now have an - v vi PREFACE opportunity to become acquainted with the work done in the USSR. |
| Beschreibung: | 1 Online-Ressource (XI, 418 p) |
| ISBN: | 9781468488210 9781468488234 |
| DOI: | 10.1007/978-1-4684-8821-0 |
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Datensatz im Suchindex
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| illustrated | Not Illustrated |
| indexdate | 2024-07-10T01:20:50Z |
| institution | BVB |
| isbn | 9781468488210 9781468488234 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-027847694 |
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| physical | 1 Online-Ressource (XI, 418 p) |
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| publishDate | 1969 |
| publishDateSearch | 1969 |
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| publisher | Springer New York |
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| series | Monographs in Semiconductor Physics |
| series2 | Monographs in Semiconductor Physics |
| spelling | Fistul', Victor I. Verfasser aut Heavily Doped Semiconductors by Victor I. Fistul' Boston, MA Springer New York 1969 1 Online-Ressource (XI, 418 p) txt rdacontent c rdamedia cr rdacarrier Monographs in Semiconductor Physics 1 Recently, there has been a considerable upsurge of interest in heavily doped semiconductors. This interest is due primarily to the expanding range of applications of such materials. Moreover, the heavy doping of semiconductors produces new effects (the formation of impurity aggregates, the appearance of allowed states in the forbidden band, etc J, which are of great interest in solid-state physics. The rapid growth in the number of papers on heavily doped semiconductors makes it difficult to review the results obtained so far. Therefore, many investigations carried out in 1966-7, particularly those on AIIIBV semiconductors, are not discussed in the present monograph, which represents the state of the knowledge in 1965. Nevertheless, the author hopes that, in spite of this, the book will be useful. An attempt is made, first, to review investigations of heavily doped semiconductors from a certain viewpoint and, secondly, to suggest some ideas (Chap. 5) which may be controversial but which are intended to stimulate further studies of heavily doped semiconductors which can be regarded as a special case of disordered systems. The work of American scientists investigating heavily doped semiconductors, in particular the efforts of E. O. Kane, J. I. Pankove, R. N. Hall, R. A. Logan, W. G. Spitzer, F. A. Trumbore, and many others, is well known to Soviet investigators. It gives me pleasure to learn that Western readers will now have an - v vi PREFACE opportunity to become acquainted with the work done in the USSR. Physics Solid State Physics Spectroscopy and Microscopy Monographs in Semiconductor Physics 1 (DE-604)BV001900848 1 https://doi.org/10.1007/978-1-4684-8821-0 Verlag Volltext |
| spellingShingle | Fistul', Victor I. Heavily Doped Semiconductors Monographs in Semiconductor Physics Physics Solid State Physics Spectroscopy and Microscopy |
| title | Heavily Doped Semiconductors |
| title_auth | Heavily Doped Semiconductors |
| title_exact_search | Heavily Doped Semiconductors |
| title_full | Heavily Doped Semiconductors by Victor I. Fistul' |
| title_fullStr | Heavily Doped Semiconductors by Victor I. Fistul' |
| title_full_unstemmed | Heavily Doped Semiconductors by Victor I. Fistul' |
| title_short | Heavily Doped Semiconductors |
| title_sort | heavily doped semiconductors |
| topic | Physics Solid State Physics Spectroscopy and Microscopy |
| topic_facet | Physics Solid State Physics Spectroscopy and Microscopy |
| url | https://doi.org/10.1007/978-1-4684-8821-0 |
| volume_link | (DE-604)BV001900848 |
| work_keys_str_mv | AT fistulvictori heavilydopedsemiconductors |