Physics and Chemistry of III-V Compound Semiconductor Interfaces:
Gespeichert in:
| Weitere Verfasser: | |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Boston, MA
Springer US
1985
|
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Beschreibung: | The application of the 111-V compound semiconductors to device fabrication has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires considerable effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tables and graphs which compare and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter |
| Beschreibung: | 1 Online-Ressource (XIII, 465 p) |
| ISBN: | 9781468448351 9781468448375 |
| DOI: | 10.1007/978-1-4684-4835-1 |
Internformat
MARC
| LEADER | 00000nmm a2200000zc 4500 | ||
|---|---|---|---|
| 001 | BV042412043 | ||
| 003 | DE-604 | ||
| 005 | 20171219 | ||
| 007 | cr|uuu---uuuuu | ||
| 008 | 150316s1985 |||| o||u| ||||||eng d | ||
| 020 | |a 9781468448351 |c Online |9 978-1-4684-4835-1 | ||
| 020 | |a 9781468448375 |c Print |9 978-1-4684-4837-5 | ||
| 024 | 7 | |a 10.1007/978-1-4684-4835-1 |2 doi | |
| 035 | |a (OCoLC)863938294 | ||
| 035 | |a (DE-599)BVBBV042412043 | ||
| 040 | |a DE-604 |b ger |e aacr | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-91 |a DE-83 | ||
| 082 | 0 | |a 530.41 |2 23 | |
| 084 | |a PHY 000 |2 stub | ||
| 245 | 1 | 0 | |a Physics and Chemistry of III-V Compound Semiconductor Interfaces |c edited by Carl W. Wilmsen |
| 264 | 1 | |a Boston, MA |b Springer US |c 1985 | |
| 300 | |a 1 Online-Ressource (XIII, 465 p) | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b c |2 rdamedia | ||
| 338 | |b cr |2 rdacarrier | ||
| 500 | |a The application of the 111-V compound semiconductors to device fabrication has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires considerable effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tables and graphs which compare and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter | ||
| 650 | 4 | |a Physics | |
| 650 | 4 | |a Solid State Physics | |
| 650 | 4 | |a Spectroscopy and Microscopy | |
| 650 | 0 | 7 | |a Halbleiteroberfläche |0 (DE-588)4137418-6 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Drei-Fünf-Halbleiter |0 (DE-588)4150649-2 |2 gnd |9 rswk-swf |
| 655 | 7 | |8 1\p |0 (DE-588)4143413-4 |a Aufsatzsammlung |2 gnd-content | |
| 689 | 0 | 0 | |a Halbleiteroberfläche |0 (DE-588)4137418-6 |D s |
| 689 | 0 | |8 2\p |5 DE-604 | |
| 689 | 1 | 0 | |a Drei-Fünf-Halbleiter |0 (DE-588)4150649-2 |D s |
| 689 | 1 | |8 3\p |5 DE-604 | |
| 700 | 1 | |a Wilmsen, Carl W. |4 edt | |
| 856 | 4 | 0 | |u https://doi.org/10.1007/978-1-4684-4835-1 |x Verlag |3 Volltext |
| 912 | |a ZDB-2-PHA |a ZDB-2-BAE | ||
| 940 | 1 | |q ZDB-2-PHA_Archive | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-027847536 | ||
| 883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
| 883 | 1 | |8 2\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
| 883 | 1 | |8 3\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
Datensatz im Suchindex
| _version_ | 1804153074256707584 |
|---|---|
| any_adam_object | |
| author2 | Wilmsen, Carl W. |
| author2_role | edt |
| author2_variant | c w w cw cww |
| author_facet | Wilmsen, Carl W. |
| building | Verbundindex |
| bvnumber | BV042412043 |
| classification_tum | PHY 000 |
| collection | ZDB-2-PHA ZDB-2-BAE |
| ctrlnum | (OCoLC)863938294 (DE-599)BVBBV042412043 |
| dewey-full | 530.41 |
| dewey-hundreds | 500 - Natural sciences and mathematics |
| dewey-ones | 530 - Physics |
| dewey-raw | 530.41 |
| dewey-search | 530.41 |
| dewey-sort | 3530.41 |
| dewey-tens | 530 - Physics |
| discipline | Physik |
| doi_str_mv | 10.1007/978-1-4684-4835-1 |
| format | Electronic eBook |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>03271nmm a2200505zc 4500</leader><controlfield tag="001">BV042412043</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20171219 </controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">150316s1985 |||| o||u| ||||||eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9781468448351</subfield><subfield code="c">Online</subfield><subfield code="9">978-1-4684-4835-1</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9781468448375</subfield><subfield code="c">Print</subfield><subfield code="9">978-1-4684-4837-5</subfield></datafield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/978-1-4684-4835-1</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)863938294</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV042412043</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">aacr</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-91</subfield><subfield code="a">DE-83</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">530.41</subfield><subfield code="2">23</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">PHY 000</subfield><subfield code="2">stub</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Physics and Chemistry of III-V Compound Semiconductor Interfaces</subfield><subfield code="c">edited by Carl W. Wilmsen</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Boston, MA</subfield><subfield code="b">Springer US</subfield><subfield code="c">1985</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 Online-Ressource (XIII, 465 p)</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">The application of the 111-V compound semiconductors to device fabrication has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires considerable effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tables and graphs which compare and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Physics</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Solid State Physics</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Spectroscopy and Microscopy</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiteroberfläche</subfield><subfield code="0">(DE-588)4137418-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Drei-Fünf-Halbleiter</subfield><subfield code="0">(DE-588)4150649-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="8">1\p</subfield><subfield code="0">(DE-588)4143413-4</subfield><subfield code="a">Aufsatzsammlung</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Halbleiteroberfläche</subfield><subfield code="0">(DE-588)4137418-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="8">2\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Drei-Fünf-Halbleiter</subfield><subfield code="0">(DE-588)4150649-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="8">3\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Wilmsen, Carl W.</subfield><subfield code="4">edt</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1007/978-1-4684-4835-1</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-2-PHA</subfield><subfield code="a">ZDB-2-BAE</subfield></datafield><datafield tag="940" ind1="1" ind2=" "><subfield code="q">ZDB-2-PHA_Archive</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-027847536</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">2\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">3\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield></record></collection> |
| genre | 1\p (DE-588)4143413-4 Aufsatzsammlung gnd-content |
| genre_facet | Aufsatzsammlung |
| id | DE-604.BV042412043 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T01:20:49Z |
| institution | BVB |
| isbn | 9781468448351 9781468448375 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-027847536 |
| oclc_num | 863938294 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-83 |
| owner_facet | DE-91 DE-BY-TUM DE-83 |
| physical | 1 Online-Ressource (XIII, 465 p) |
| psigel | ZDB-2-PHA ZDB-2-BAE ZDB-2-PHA_Archive |
| publishDate | 1985 |
| publishDateSearch | 1985 |
| publishDateSort | 1985 |
| publisher | Springer US |
| record_format | marc |
| spelling | Physics and Chemistry of III-V Compound Semiconductor Interfaces edited by Carl W. Wilmsen Boston, MA Springer US 1985 1 Online-Ressource (XIII, 465 p) txt rdacontent c rdamedia cr rdacarrier The application of the 111-V compound semiconductors to device fabrication has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires considerable effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tables and graphs which compare and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter Physics Solid State Physics Spectroscopy and Microscopy Halbleiteroberfläche (DE-588)4137418-6 gnd rswk-swf Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd rswk-swf 1\p (DE-588)4143413-4 Aufsatzsammlung gnd-content Halbleiteroberfläche (DE-588)4137418-6 s 2\p DE-604 Drei-Fünf-Halbleiter (DE-588)4150649-2 s 3\p DE-604 Wilmsen, Carl W. edt https://doi.org/10.1007/978-1-4684-4835-1 Verlag Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 3\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Physics and Chemistry of III-V Compound Semiconductor Interfaces Physics Solid State Physics Spectroscopy and Microscopy Halbleiteroberfläche (DE-588)4137418-6 gnd Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd |
| subject_GND | (DE-588)4137418-6 (DE-588)4150649-2 (DE-588)4143413-4 |
| title | Physics and Chemistry of III-V Compound Semiconductor Interfaces |
| title_auth | Physics and Chemistry of III-V Compound Semiconductor Interfaces |
| title_exact_search | Physics and Chemistry of III-V Compound Semiconductor Interfaces |
| title_full | Physics and Chemistry of III-V Compound Semiconductor Interfaces edited by Carl W. Wilmsen |
| title_fullStr | Physics and Chemistry of III-V Compound Semiconductor Interfaces edited by Carl W. Wilmsen |
| title_full_unstemmed | Physics and Chemistry of III-V Compound Semiconductor Interfaces edited by Carl W. Wilmsen |
| title_short | Physics and Chemistry of III-V Compound Semiconductor Interfaces |
| title_sort | physics and chemistry of iii v compound semiconductor interfaces |
| topic | Physics Solid State Physics Spectroscopy and Microscopy Halbleiteroberfläche (DE-588)4137418-6 gnd Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd |
| topic_facet | Physics Solid State Physics Spectroscopy and Microscopy Halbleiteroberfläche Drei-Fünf-Halbleiter Aufsatzsammlung |
| url | https://doi.org/10.1007/978-1-4684-4835-1 |
| work_keys_str_mv | AT wilmsencarlw physicsandchemistryofiiivcompoundsemiconductorinterfaces |